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    • 81. 发明申请
    • NON-VOLATILE SEMICONDUCTOR DEVICE
    • 非挥发性半导体器件
    • US20120025163A1
    • 2012-02-02
    • US13182696
    • 2011-07-14
    • Junya ONISHIShinobu YamazakiKazuya IshiharaYushi InoueYukio TamaiNobuyoshi Awaya
    • Junya ONISHIShinobu YamazakiKazuya IshiharaYushi InoueYukio TamaiNobuyoshi Awaya
    • H01L45/00
    • H01L45/04H01L27/2436H01L45/1233H01L45/146
    • A variable resistance element that can stably perform a switching operation with a property variation being reduced by suppressing a sharp current that accompanies completion of forming process, and a non-volatile semiconductor memory device including the variable resistance element are realized. The non-volatile semiconductor memory device uses the variable resistance element for storing information in which a resistance changing layer is interposed between a first electrode and a second electrode, and a buffer layer is inserted between the first electrode and the resistance changing layer where a switching interface is formed. The buffer layer and the resistance changing layer include n-type metal oxides, and materials of the buffer layer and the resistance changing layer are selected such that energy at a bottom of a conduction band of the n-type metal oxide configuring the buffer layer is lower than that of the n-type metal oxide configuring the resistance changing layer.
    • 通过抑制伴随着成形处理的完成的尖锐电流,可以稳定地进行具有特性变化的开关动作的可变电阻元件,以及包括该可变电阻元件的非易失性半导体存储器件。 非易失性半导体存储器件使用可变电阻元件来存储在第一电极和第二电极之间插入电阻变化层的信息,并且缓冲层插入在第一电极和电阻变化层之间,其中开关 界面形成。 缓冲层和电阻变化层包括n型金属氧化物,并且选择缓冲层和电阻变化层的材料,使得构成缓冲层的n型金属氧化物的导带的底部的能量为 低于构成电阻变化层的n型金属氧化物。
    • 83. 发明申请
    • VARIABLE RESISTANCE ELEMENT
    • 可变电阻元件
    • US20090102597A1
    • 2009-04-23
    • US11994646
    • 2006-07-05
    • Kazuya Ishihara
    • Kazuya Ishihara
    • H01C7/10
    • G11C13/0007G11C13/0069G11C2013/009G11C2213/31G11C2213/52H01L45/04H01L45/1233H01L45/146H01L45/147H01L45/1683
    • In a variable resistance element having a variable resistor between first and second electrodes and changing its electric resistance when a voltage pulse is applied between both electrodes, data holding characteristics can be improved by increasing a programming voltage and programming in a high current density. Therefore, a booster circuit for supplying a high voltage is needed when the variable resistance element is applied to a nonvolatile memory. When the smaller of the areas of the contact regions between the first electrode and variable resistor and between the second electrode and variable resistor is set to the electrode area of the variable resistance element, it is set within a specific range not larger than the predetermined electrode area. Thereby the programming current density can be increased without raising the programming voltage, and the variable resistance element having preferable data holding characteristics even at a high temperature can be provided.
    • 在具有第一和第二电极之间的可变电阻器的可变电阻元件中,并且当在两个电极之间施加电压脉冲时改变其电阻,可以通过增加编程电压并以高电流密度编程来提高数据保持特性。 因此,当可变电阻元件被施加到非易失性存储器时,需要用于提供高电压的升压电路。 当第一电极和可变电阻器之间以及第二电极和可变电阻器之间的接触区域中较小的区域被设置为可变电阻元件的电极区域时,其设定在不大于预定电极的特定范围内 区。 因此,可以提高编程电流密度而不提高编程电压,并且可以提供即使在高温也具有优选数据保持特性的可变电阻元件。