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81. 发明授权

US08824517B2 Surface-emission laser devices, surface-emission laser array having the same, electrophotographic system and optical communication system 有权
标题翻译：表面发射激光器件，具有相同的表面发射激光器阵列，电子照相系统和光通信系统
公开(公告)号：US08824517B2
公开(公告)日：2014-09-02
申请号：US13682014
申请日：2012-11-20
申请人： Naoto Jikutani , Shunichi Sato
发明人： Naoto Jikutani , Shunichi Sato
IPC分类号： H01S5/183 , H01S5/18 , B82Y20/00 , H01S5/42 , H01S5/00 , H01S5/343 , H01S5/065 , B41J2/45
CPC分类号： H01S5/18 , B41J2/45 , B82Y20/00 , H01S5/0014 , H01S5/0655 , H01S5/18308 , H01S5/18313 , H01S5/1833 , H01S5/18333 , H01S5/18358 , H01S5/18369 , H01S5/18391 , H01S5/3432 , H01S5/423 , H01S2301/166
摘要： A surface-emission laser device comprises an active layer, cavity spacer layers provided at both sides of the active layer, reflection layers provided at respective sides of the cavity spacer layers, the reflection layers reflecting an oscillation light oscillated in the active layer and a selective oxidation layer. The selective oxidation layer is provided between a location in the reflection layer corresponding to a fourth period node of the standing wave distribution of the electric field of the oscillating light and a location in the reflection layer adjacent to the foregoing fourth period node in the direction away from the active layer and corresponding to an anti-node of the standing wave distribution of the electric field of the oscillation light.
摘要翻译：表面发射激光器件包括有源层，设置在有源层的两侧的空腔间隔层，设置在空腔间隔层的各侧的反射层，反射在有源层中振荡的振荡光的反射层和选择性氧化层。选择氧化层设置在反射层中的与振荡光的电场的驻波分布的第四周期节点相对应的位置和与前述第四周期节点相邻的反射层中的位置在远离的方向来自有源层，对应于振荡光的电场的驻波分布的反节点。

82. 发明授权

US08803936B2 Optical device capable of minimizing output variation due to feedback light, optical scanning apparatus, and image forming apparatus 有权
标题翻译：能够使由反馈光产生的输出变化最小化的光学装置，光学扫描装置和图像形成装置
公开(公告)号：US08803936B2
公开(公告)日：2014-08-12
申请号：US13505516
申请日：2010-12-15
申请人： Kazuhiko Adachi , Shunichi Sato , Satoru Sugawara , Toshihiro Ishii
发明人： Kazuhiko Adachi , Shunichi Sato , Satoru Sugawara , Toshihiro Ishii
IPC分类号： B41J2/385 , B41J2/41 , B41J2/45 , B41J15/14 , B41J27/00 , B41J2/435 , B41J2/47 , B41J2/455
CPC分类号： B41J2/45 , B41J2/455 , B41J2/473 , B82Y20/00 , G02B26/124 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2924/1815 , H01S5/02208 , H01S5/02228 , H01S5/0224 , H01S5/02264 , H01S5/02288 , H01S5/02296 , H01S5/0425 , H01S5/18313 , H01S5/18347 , H01S5/1835 , H01S5/18355 , H01S5/18394 , H01S5/3406 , H01S5/423 , H01L2924/00014
摘要： An optical device includes a surface-emitting laser array having a plurality of light-emitting portions; a package member on which the surface-emitting laser array is disposed; and a transparent member retained on the package member and disposed on an optical path of a light beam emitted by the surface-emitting laser array. The transparent member includes an incident plane on which the light beam emitted by the surface-emitting laser array is incident. The incident plane is inclined with respect to an emitting surface of the surface-emitting laser array at a first inclination angle which is smaller than a second inclination angle at which the light emitted by one of the light-emitting portions is incident on another, most-distant one, of the light-emitting portions via reflection by the transparent member.
摘要翻译：光学器件包括具有多个发光部分的表面发射激光器阵列; 表面发射激光器阵列设置在其上的封装构件; 以及保持在封装构件上并设置在由表面发射激光器阵列发射的光束的光路上的透明构件。透明构件包括由表面发射激光器阵列发射的光束入射的入射面。入射面相对于表面发射激光器阵列的发射表面以比第一倾斜角小的第一倾斜角度倾斜，第二倾斜角由发光部分中的一个发射的光入射到另一个通过透明构件的反射而分离发光部分。

83. 发明授权

US08675271B2 Surface-emitting laser element, surface-emitting laser array, optical scanner device, and image forming apparatus 有权
标题翻译：表面发射激光元件，表面发射激光器阵列，光学扫描器装置和图像形成装置
公开(公告)号：US08675271B2
公开(公告)日：2014-03-18
申请号：US12983586
申请日：2011-01-03
申请人： Naoto Jikutani , Kazuhiro Harasaka , Satoru Sugawara , Shunichi Sato
发明人： Naoto Jikutani , Kazuhiro Harasaka , Satoru Sugawara , Shunichi Sato
IPC分类号： G02B26/08 , H01S5/00
CPC分类号： H01S5/18394 , B41J2/471 , B82Y20/00 , H01S5/0425 , H01S5/0655 , H01S5/18311 , H01S5/18355 , H01S5/18358 , H01S5/3432 , H01S2301/14 , H01S2301/18
摘要： A disclosed surface-emitting laser element includes an emission region configured to emit a laser beam and a high reflectance region including a first dielectric film having a first refractive index and a second dielectric film having a second refractive index differing from the first refractive index where the first dielectric film and the second dielectric film are stacked within the emission region to provide high reflectance. In the surface-emitting laser element, the high reflectance region is formed in a region including a central portion of the emission region and is configured to include shape anisotropy in two orthogonal directions in a plane in parallel with the emission region.
摘要翻译：所公开的表面发射激光元件包括配置为发射激光束的发射区域和包括具有第一折射率的第一电介质膜和具有与第一折射率不同的第二折射率的第二电介质膜的高反射率区域，第一电介质膜和第二电介质膜堆叠在发射区域内以提供高反射率。在表面发射激光器元件中，高反射率区域形成在包括发射区域的中心部分的区域中，并且被构造成在与发射区域平行的平面中的两个正交方向上包括形状各向异性。

84. 发明授权

US08502852B2 Surface emitting laser device, surface emitting laser array, optical scanning device, image forming apparatus, and method of manufacturing the surface emitting laser device 有权
标题翻译：表面发射激光器件，表面发射激光器阵列，光学扫描器件，成像设备和制造表面发射激光器件的方法
公开(公告)号：US08502852B2
公开(公告)日：2013-08-06
申请号：US13155494
申请日：2011-06-08
申请人： Masayuki Numata , Shunichi Sato
发明人： Masayuki Numata , Shunichi Sato
IPC分类号： B41J2/45 , H01S5/00
CPC分类号： H01S5/18311 , B41J2/471 , H01S5/18347 , H01S5/1835 , H01S5/423 , H01S2301/176
摘要： A surface emitting laser device includes a substrate and plural semiconductor layers laminated on the substrate, the plural semiconductor layers including a first semiconductor multi-layer film including aluminum (Al), an active layer, and a second semiconductor multi-layer film, a light emitting section having a mesa structure being formed on the first semiconductor multi-layer film. When viewed in a direction orthogonal to a surface of the substrate, an outer shape of the first semiconductor multi-layer film is a macroscopically smooth shape without an angular corner, and a side surface of the first semiconductor multi-layer film is coated with a passivation film and a protection film.
摘要翻译：表面发射激光器件包括衬底和层叠在衬底上的多个半导体层，所述多个半导体层包括包括铝（Al），有源层和第二半导体多层膜的第一半导体多层膜，光具有在第一半导体多层膜上形成的台面结构的发光部。当在与基板表面正交的方向上观察时，第一半导体多层膜的外形是没有角角的宏观平滑形状，并且第一半导体多层膜的侧表面涂覆有钝化膜和保护膜。

85. 发明授权

US08106648B2 Non-contact rotational angle detecting sensor 有权
标题翻译：非接触式旋转角检测传感器
公开(公告)号：US08106648B2
公开(公告)日：2012-01-31
申请号：US12289876
申请日：2008-11-06
申请人： Shunichi Sato
发明人： Shunichi Sato
IPC分类号： G01B7/30
CPC分类号： G01D5/14
摘要： There is provided a non-contact rotational detecting sensor comprising a ring-shaped permanent magnet which rotates integrally with a detection object of a rotational angle and of which a magnetic pole changes along the circumferential direction, a ring-shaped inside magnetic flux collecting yoke for surrounding an outer peripheral surface of the ring-shaped permanent magnet in a constant gap, a ring-shaped outside magnetic flux collecting yoke for surrounding an outer peripheral surface of the ring-shaped inside magnetic flux collecting yoke in a constant gap, and a hole IC arranged in a gap formed in the ring-shaped inside magnetic flux collecting yoke, wherein an axial height of the ring-shaped inside magnetic flux collecting yoke is changed along a circumferential direction of the ring-shaped inside magnetic flux collecting yoke.
摘要翻译：提供了一种非接触式旋转检测传感器，包括与旋转角检测对象一体旋转并且磁极沿圆周方向变化的环形永磁体，环形内磁通集合磁轭，用于围绕环形永久磁铁的外周面以恒定的间隙围绕环状的内部磁通收集磁轭的外周面以恒定的间隙包围的环状的外部磁通收集磁轭， IC布置在形成在环形内部磁通集合磁轭中的间隙中，其中环形内部磁通集流磁轭的轴向高度沿着环形内部磁通集合磁轭的圆周方向改变。

86. 发明授权

US08035676B2 Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus 有权
标题翻译：表面发射激光元件，表面发射激光器阵列，光学扫描装置和成像装置
公开(公告)号：US08035676B2
公开(公告)日：2011-10-11
申请号：US12432872
申请日：2009-04-30
申请人： Kazuhiro Harasaka , Shunichi Sato , Naoto Jikutani , Toshihiro Ishii
发明人： Kazuhiro Harasaka , Shunichi Sato , Naoto Jikutani , Toshihiro Ishii
IPC分类号： B41J2/45 , H01S5/00
CPC分类号： H01S5/1835 , B41J2/471 , B82Y20/00 , G02B26/12 , H01S5/18313 , H01S5/18355 , H01S5/18358 , H01S5/18394 , H01S5/3202 , H01S5/3406 , H01S5/423 , H01S2301/176 , H01S2301/185 , H01S2304/02 , H01S2304/04
摘要： In a surface emitting laser element, on a substrate whose normal direction of a principal surface is inclined, a resonator structural body including an active layer, and a lower semiconductor DBR and an upper semiconductor DBR sandwiching the resonator structural body are stacked. A shape of a current passing through region in an oxide confinement structure of the upper semiconductor DBR is symmetrical to an axis passing through a center of the current passing through region parallel to an X axis and symmetrical to an axis passing through the center of the current passing through region parallel to a Y axis, and a length of the current passing through region is greater in the Y axis direction than in the X axis direction. A thickness of an oxidized layer surrounding the current passing through region is greater in the −Y direction than in the +X and −X directions.
摘要翻译：在表面发射激光元件中，在主表面的法线方向倾斜的基板上堆叠包括有源层的谐振器结构体和夹持谐振器结构体的下半导体DBR和上半导体DBR。上半导体DBR的氧化物限制结构中的电流通过区域的形状与通过平行于X轴的电流通过区域的中心的轴对称，并且与通过电流的中心的轴对称通过区域与Y轴平行，并且电流通过区域的长度在Y轴方向上比在X轴方向上大。围绕电流通过区域的氧化层的厚度在-Y方向上大于在+ X和-X方向上的厚度。

87. 再颁专利

USRE41890E1 Methods for growing semiconductors and devices thereof from the alloy semiconductor GaInNAs 有权
标题翻译：从合金半导体GaInNA生长半导体及其器件的方法
公开(公告)号：USRE41890E1
公开(公告)日：2010-10-26
申请号：US10603418
申请日：2003-06-24
申请人： Shunichi Sato
发明人： Shunichi Sato
IPC分类号： H01L21/30
CPC分类号： C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/0254 , H01L21/02546 , H01L21/02573 , H01L21/0262
摘要： A method is disclosed for growing a nitrogen-containing Ill-V alloy semiconductor on a semiconductor substrate such as GaAs, which is formed by MOCVD method using nitrogen containing organic compounds having relatively low dissociation temperatures. The alloy semiconductor has a high nitrogen content which exceeds the contents previously achieved, and has a high photoluminescence intensity.There are also disclosed fabrications of semiconductor devices comprising the alloy semiconductors, such as heterostructure and homo-junction light emitting devices.
摘要翻译：公开了一种用于在诸如GaAs的半导体衬底上生长含氮的III-V合金半导体的方法，其通过使用具有相对较低解离温度的含氮有机化合物的MOCVD法形成。合金半导体的氮含量高于先前所得的含量，具有高的光致发光强度。还公开了包括合金半导体的半导体器件的制造，例如异质结构和均联发光器件。

88. 发明申请

US20100216109A1 METHOD AND APPARATUS FOR DRUG DELIVERY TO TISSUE OR ORGAN FOR TRANSPLANT 审中-公开
标题翻译：用于药物递送给组织或运输组织的方法和装置
公开(公告)号：US20100216109A1
公开(公告)日：2010-08-26
申请号：US12776171
申请日：2010-05-07
申请人： Minoru OBARA , Mitsuhiro Terakawa , Shunichi Sato , Daizoh Saitoh
发明人： Minoru OBARA , Mitsuhiro Terakawa , Shunichi Sato , Daizoh Saitoh
IPC分类号： A01N1/02
CPC分类号： A61K31/7088 , A01N1/02 , A01N1/0226 , A01N1/0294 , A61N5/0601 , A61N2005/067
摘要： It is intended to provide a method for delivering a drug such as a gene to a tissue or organ for transplant such as skin by use of a laser-induced stress wave (LISW) and thereby producing a high-performance tissue or organ for transplant with a high survival ability and to provide an apparatus for carrying out the method as well as a high-performance tissue or organ for transplant produced by the method. The present invention provides a method for delivering a drug to a graft of a tissue or organ for transplant, comprising applying a drug to a graft of a tissue or organ for transplant and applying, to the graft, a stress wave induced by the laser light irradiation of a light absorber provided in proximity to the graft, wherein the light absorber is made of a substance capable of absorbing a laser light and generating a stress wave.
摘要翻译：旨在提供一种通过使用激光诱导的应激波（LISW）将诸如基因的药物递送到用于移植的组织或器官如皮肤的方法，从而产生用于移植的高性能组织或器官，高生存能力，并提供用于实施该方法的装置以及通过该方法产生的用于移植的高性能组织或器官。本发明提供了将药物递送至用于移植的组织或器官的移植物的方法，包括将药物施用于组织或器官的移植物移植并向移植物施加由激光引起的应激波照射靠近移植物的光吸收体，其中光吸收体由能够吸收激光并产生应力波的物质制成。

89. 发明申请

US20100195691A1 LASER DIODE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE PRODUCING VISIBLE-WAVELENGTH RADIATION 有权
标题翻译：产生可见波长辐射的激光二极管和半导体发光器件
公开(公告)号：US20100195691A1
公开(公告)日：2010-08-05
申请号：US12696322
申请日：2010-01-29
申请人： Naoto Jikutani , Takashi Takahashi , Shunichi Sato
发明人： Naoto Jikutani , Takashi Takahashi , Shunichi Sato
IPC分类号： H01S5/187
CPC分类号： H01S5/2202 , B82Y20/00 , H01S5/22 , H01S5/2206 , H01S5/2209 , H01S5/221 , H01S5/2231 , H01S5/3201 , H01S5/3434
摘要： A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.
摘要翻译：激光二极管包括具有GaAs晶格常数或GaAs和GaP之间的基板，在基板上形成的AlGaInP的第一包层，形成在第一包层上的GaInAsP的有源层，形成在第一包层上的GaInP的蚀刻停止层有源层，在蚀刻阻挡层上形成一对AlGaInP的电流阻挡区域，以便限定它们之间的条带区域，形成在一对电流阻挡区域上以覆盖蚀刻阻挡层的AlGaInP光波导层以及形成在光波导层上的AlGaInP的第二包覆层，其中，所述电流阻挡区域的Al含量基本上与第二包层的Al含量相同。

90. 再颁专利

USRE41310E1 Methods for growing semiconductors and devices thereof the alloy semiconductor gainnas 有权
标题翻译：用于生长半导体的方法及其装置的合金半导体增益
公开(公告)号：USRE41310E1
公开(公告)日：2010-05-04
申请号：US09860369
申请日：2001-05-17
申请人： Shunichi Sato
发明人： Shunichi Sato
IPC分类号： H01L21/30
CPC分类号： C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/0254 , H01L21/02546 , H01L21/02573 , H01L21/0262
摘要： A method is disclosed for growing a nitrogen-containing III-V alloy semiconductor on a semiconductor substrate such as GaAs, which is formed by MOCVD method using nitrogen containing organic compounds having relatively low dissociation temperatures. The alloy semiconductor has a high nitrogen content which exceeds the contents previously achieved, and has a high photoluminescence intensity.There are also disclosed fabrications of semiconductor devices comprising the alloy semiconductors, such as heterostructure and homo-junction light emitting devices.
摘要翻译：公开了一种用于在诸如GaAs的半导体衬底上生长含氮III-V合金半导体的方法，其通过使用具有较低解离温度的含氮有机化合物的MOCVD法形成。合金半导体的氮含量高于先前所得的含量，具有高的光致发光强度。还公开了包括合金半导体的半导体器件的制造，例如异质结构和均联发光器件。

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