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    • 89. 发明授权
    • Semiconductor device and semiconductor device manufacturing method
    • US11296233B2
    • 2022-04-05
    • US16962558
    • 2019-02-01
    • Semiconductor Energy Laboratory Co., Ltd.
    • Shunpei YamazakiKatsuaki TochibayashiKensuke Yoshizumi
    • H01L27/00H01L29/00H01L29/786H01L29/423H01L29/51
    • A semiconductor device having favorable electrical characteristics can be provided. The semiconductor device having favorable electrical characteristics is provided. The semiconductor device has a structure including a first metal oxide layer including a first region, and a second region and a third region in which phosphorus, boron, aluminum, or magnesium is added and between which the first region is sandwiched; a conductive layer which overlaps with the first region; a first insulating layer which covers a side surface and a bottom surface of the conductive layer; a second metal oxide layer which covers a side surface and a bottom surface of the first insulating layer and is in contact with a top surface of the first region; a second insulating layer in contact with a top surface of the second region and a top surface of the third region and in contact with a side surface of the second metal oxide layer; a third insulating layer positioned over the second insulating layer and in contact with a side surface of the second metal oxide layer; a fourth insulating layer positioned over the third insulating layer and in contact with a side surface of the second metal oxide layer; a fifth insulating layer in contact with a top surface of the conductive layer, a top surface of the first insulating layer, a top surface of the second metal oxide layer, and a top surface of the fourth insulating layer.