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81. 发明授权

US5424669A Digitally controlled output slope control/current limit in power integrated circuits 失效
标题翻译：功率集成电路数字控制输出斜率控制/限流
公开(公告)号：US5424669A
公开(公告)日：1995-06-13
申请号：US055071
申请日：1993-04-29
申请人： Ross E. Teggatz , Joe A. Devore
发明人： Ross E. Teggatz , Joe A. Devore
IPC分类号： H03K17/081 , H03K17/16 , H03H11/26
CPC分类号： H03K17/08104 , H03K17/164
摘要： A slope control circuit having a plurality of resistive elements connected in parallel, each of the resistive elements including a control element for causing the associated resistive elements to be one of electrically conductive or electrically nonconductive, a delay circuit having a plurality of delay components coupled together in series, each of the delay components having a predetermined delay, the junction of each different adjacent pair of the delay components being coupled to the control element of a different one of the resistive elements and a load circuit coupled across the plurality of resistive elements. The circuit can further include a delay adjust circuit for adjusting the delay of each of the delay components, either initially or on-line. The resistance of each of the resistive elements can be the same or different. The plurality of resistive elements and the delay components are all disposed on a single semiconductor chip.
摘要翻译：一种具有并联连接的多个电阻元件的斜率控制电路，每个电阻元件包括用于使相关联的电阻元件为导电或不导电的控制元件，具有耦合在一起的多个延迟元件的延迟电路串联地，每个延迟部件具有预定的延迟，每个不同的相邻延迟部件对的结被耦合到不同的电阻元件的控制元件和耦合在多个电阻元件上的负载电路。该电路还可以包括延迟调整电路，用于调整每个延迟部件的延迟，或者是初始的或在线的。每个电阻元件的电阻可以相同或不同。多个电阻元件和延迟元件都设置在单个半导体芯片上。

82. 发明授权

US5408141A Sensed current driving device 失效
标题翻译：感应电流驱动装置
公开(公告)号：US5408141A
公开(公告)日：1995-04-18
申请号：US160
申请日：1993-01-04
申请人： Joseph A. Devore , Ross E. Teggatz , Konrad Wagensohner
发明人： Joseph A. Devore , Ross E. Teggatz , Konrad Wagensohner
IPC分类号： H01L27/02 , H03K17/082 , H03K3/353
CPC分类号： H01L27/0248 , H03K17/0822
摘要： An integrated power device comprises a power transistor (26) and a plurality of sense transistors (38), (40), (42), (44), and (46). Sense transistors (38), (40), (42), and (44) are constructed around the periphery of the active area occupied by power transistor (26). Sense transistor (46) is located within the interior of the active area occupied by power transistor (26) and contact is made to the necessary source region (64) of transistor (46) using a second level of metal interconnect to form a source contact (74).
摘要翻译：集成的功率器件包括功率晶体管（26）和多个感测晶体管（38），（40），（42），（44）和（46）。感测晶体管（38），（40），（42）和（44）围绕由功率晶体管（26）占据的有源区域的外围构成。感测晶体管（46）位于由功率晶体管（26）占据的有效区域的内部，并且使用第二级金属互连件与晶体管（46）的必要源极区域（64）接触以形成源极接触（74）。

83. 发明授权

US5349286A Compensation for low gain bipolar transistors in voltage and current reference circuits 失效
标题翻译：电压和电流参考电路中低增益双极晶体管的补偿
公开(公告)号：US5349286A
公开(公告)日：1994-09-20
申请号：US79665
申请日：1993-06-18
申请人： Andrew Marshall , Thomas A. Schmidt , Ross E. Teggatz
发明人： Andrew Marshall , Thomas A. Schmidt , Ross E. Teggatz
IPC分类号： G05F3/30 , H03F3/343 , G05F3/16
CPC分类号： G05F3/30
摘要： A bandgap reference circuit 30 includes a current generation circuit 32, a voltage generation circuit 34 connected to current generation circuit 32, and a compensation circuit connected to current generation circuit 32 and voltage generation circuit 34. Current generation circuit 32 sources a current to voltage generation circuit 34 which translates the current into a voltage. Compensation circuit 36 monitors current generation circuit 32 and provides a supplemental current to voltage generation circuit 34. Voltage generation circuit 34 receives the supplemental current and translates it into a supplemental voltage. The summation of the voltage produced by the current received by current generation circuit 32 and the supplemental voltage produced by the supplemental current received by compensation circuit 36 produces a stable reference voltage.
摘要翻译：带隙参考电路30包括电流产生电路32，连接到电流产生电路32的电压产生电路34以及连接到电流产生电路32和电压产生电路34的补偿电路。电流产生电路32产生电流到电压产生电路34，其将电流转换成电压。补偿电路36监视电流产生电路32并向电压产生电路34提供补充电流。电压产生电路34接收补充电流并将其转换成补充电压。由电流发生电路32接收的电流产生的电压和由补偿电路36接收的补充电流产生的补充电压的总和产生稳定的参考电压。

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