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81. 发明授权

US5284554A Electrochemical micromachining tool and process for through-mask patterning of thin metallic films supported by non-conducting or poorly conducting surfaces 失效
标题翻译：电化学微加工工具和由不导电或导电不良的表面支撑的薄金属膜的通孔掩模图案化工艺
公开(公告)号：US5284554A
公开(公告)日：1994-02-08
申请号：US819310
申请日：1992-01-09
申请人： Madhav Datta , Lubomyr T. Romankiw
发明人： Madhav Datta , Lubomyr T. Romankiw
IPC分类号： C25F3/06 , C23F1/02 , C25F3/14 , C25F7/00 , H01G13/00 , H05K3/07 , B23H3/10 , B23H7/32 , B23H9/06
CPC分类号： C25F3/14 , H05K3/07
摘要： The present invention describes a high speed, high precision electrochemical micromachining tool, chemical solution and method for the one sided through-mask micropatterning of conducting foils and films supported by insulating material. The tool of the present invention can include either a movable plate means allowing for the movement of the workpiece to and fro above the cathode assembly, or a movable cathode assembly means allowing for the movement of said cathode assembly to and fro beneath the workpiece. Said cathode assembly also consists of a nozzle assembly from which the electrolytic solution emerges as electrolytic shower and impinges upon the workpiece. Methods to resolve the problems related to the loss of electrical contact during the electrochemical micromachining process are also described.
摘要翻译：本发明描述了一种高速，高精度电化学微加工工具，化学溶液和方法，用于通过绝缘材料支撑的导电箔和薄膜的单面通孔掩模微图案。本发明的工具可以包括允许工件在阴极组件上方移动的可动板装置，或允许所述阴极组件在工件下方移动的可动阴极组件装置。所述阴极组件还包括喷嘴组件，电解溶液从该喷嘴组件作为电解淋浴喷出并撞击在工件上。还描述了解决与电化学微加工过程中的电接触损失有关的问题的方法。

82. 发明授权

US4379022A Method for maskless chemical machining 失效
标题翻译：无掩模化学加工方法
公开(公告)号：US4379022A
公开(公告)日：1983-04-05
申请号：US170472
申请日：1980-07-21
申请人： Robert L. Melcher , Lubomyr T. Romankiw , Robert J. Von Gutfeld
发明人： Robert L. Melcher , Lubomyr T. Romankiw , Robert J. Von Gutfeld
IPC分类号： C23F1/02 , C25F3/14 , H01L21/3213
CPC分类号： H01L21/32134 , C23F1/02 , C25F3/14
摘要： A method for high resolution maskless chemical and electrochemical machining is described. Preferential etching results from exposing those regions where machining is sought to an energy beam. Such exposures can increase the etching rate in the case of electrochemical machining by a factor of 10.sup.3 to 10.sup.4. Such enhancement is sufficient to make masking unnecessary.
摘要翻译：描述了一种用于高分辨率无掩蔽化学和电化学加工的方法。优先蚀刻是将寻求加工的区域暴露于能量束。这种曝光可以在电化学加工的情况下提高103至104的蚀刻速率。这种增强足以使掩蔽不必要。

83. 发明授权

US4295183A Thin film metal package for LSI chips 失效
标题翻译：用于LSI芯片的薄膜金属封装
公开(公告)号：US4295183A
公开(公告)日：1981-10-13
申请号：US53497
申请日：1979-06-29
申请人： Ekkehard F. Miersch , Lubomyr T. Romankiw
发明人： Ekkehard F. Miersch , Lubomyr T. Romankiw
IPC分类号： H05K1/05 , H01L21/60 , H01L23/12 , H01L23/14 , H01L23/52 , H01L23/538 , H05K1/11 , H05K3/32 , H05K3/46 , H05K1/16
CPC分类号： H05K3/4641 , H01L23/142 , H01L23/5385 , H01L2224/16225 , H05K1/113 , H05K2201/09309 , H05K2201/09563 , H05K2201/09809
摘要： An integrated circuit board for mounting very high density chips of small size on its top surface including conductor planes for carrying very large values of .DELTA.I (transient current) is constructed with a plurality of essentially flat parallel power planes serving as conductive leads to the chip connectors (pins or solder balls). The land areas on the top surface of the board are connected to conductors below by integrated coaxial conductor extensions from the planes having a high degree of capacitive coupling to adjacent conductor planes.
摘要翻译：用于在其顶表面上安装小尺寸的非常高密度的芯片的集成电路板包括用于承载非常大的DELTA I（瞬态电流）值的导体平面的多个基本上平坦的平行电力平面，用作导电引线到芯片连接器（针或焊球）。板的顶表面上的焊盘区域由具有高度电容耦合到相邻导体平面的平面的集成同轴导体延伸部分连接到下面的导体。

84. 发明授权

US4224361A High temperature lift-off technique 失效
标题翻译：高温剥离技术
公开(公告)号：US4224361A
公开(公告)日：1980-09-23
申请号：US939926
申请日：1978-09-05
申请人： Lubomyr T. Romankiw
发明人： Lubomyr T. Romankiw
IPC分类号： G03F1/68 , G03F7/26 , H01L21/027 , H01L21/033 , H05K3/14 , G03C5/00
CPC分类号： G03F1/68 , G03F7/26 , H01L21/0271 , H01L21/0331 , H05K3/143
摘要： A layer of resist is applied to a metal substrate, and a matrix is formed in the resist. A metal or dielectric mask having overhanging upper edges is formed by electroplating metal into the resist matrix which has preformed openings for defining the mask. The resist matrix is then removed from the substrate. A film is then deposited upon the substrate, where it is exposed, and the mask with the overhanging upper edges protecting the side walls of the mask from being covered. Then a chemical, such as an etchant, is applied to the side walls of the mask to remove it, lifting off the material deposited upon it. The mask is made by plating metal through apertures or coating of tapered holes.
摘要翻译：将抗蚀剂层施加到金属基板上，并且在抗蚀剂中形成基体。具有突出的上边缘的金属或介电掩模通过将金属电镀到抗蚀剂基质中而形成，该抗蚀剂基体具有用于限定掩模的开口。然后将抗蚀剂基质从基材上除去。然后将膜沉积在衬底上，在其上暴露，并且具有保护面罩侧壁的悬垂上边缘的掩模不被覆盖。然后，将诸如蚀刻剂的化学品施加到掩模的侧壁以将其去除，从而沉积在其上的材料。面罩是通过孔或电镀锥形孔制成的。

85. 发明授权

US4080267A Method for forming thick self-supporting masks 失效
标题翻译：用于形成厚自支撑面罩的方法
公开(公告)号：US4080267A
公开(公告)日：1978-03-21
申请号：US645108
申请日：1975-12-29
申请人： Eugene E. Castellani , Patrick M. McCaffrey , Aloysius T. Pfeiffer , Lubomyr T. Romankiw
发明人： Eugene E. Castellani , Patrick M. McCaffrey , Aloysius T. Pfeiffer , Lubomyr T. Romankiw
IPC分类号： G03F7/038 , G03F1/20 , G03F7/004 , H01L21/027 , C25D5/02 , C25D1/08 , C25D1/20
CPC分类号： G03F1/20
摘要： A method of constructing a relatively thick, self-supporting mask suitable for electron beam projection processes. Thickness is achieved by multiple steps of coating with resist, exposure, development and plating. First an intermediate or lift off layer is deposited on a substrate. A plating or a cathode layer may then be deposited. Resist is then applied. A first mask layer comprises metal plated in accordance with the first pattern. For the second exposure a geometrically similar pattern is employed to generate larger apertures. Thus, if the first mask layer has 0.20 mil apertures, the second layer might have corresponding 0.21 mil to 0.22 mil apertures. For initial mask patterns of about 2 mil the second layer might be 2.02 mils. If desired, a third exposure can be employed with a third pattern, similar to the first two, but having larger apertures (by 0.02 to 0.03 mils) than the second pattern.
摘要翻译：一种构造适合于电子束投影工艺的相对厚的自支撑掩模的方法。厚度通过涂覆抗蚀剂，曝光，显影和电镀的多个步骤来实现。首先将中间层或剥离层沉积在基底上。然后可以沉积电镀或阴极层。然后施加抗蚀剂。第一掩模层包括根据第一图案电镀的金属。对于第二次曝光，采用几何相似的图案来产生较大的孔。因此，如果第一掩模层具有0.20密耳的孔，则第二层可具有相应的0.21密耳至0.22密耳孔。对于约2密耳的初始掩模图案，第二层可以是2.02密耳。如果需要，可以采用类似于前两个第三图案的第三曝光，但是具有比第二图案更大的孔（0.02至0.03密耳）。

86. 发明授权

US4003768A Method for treating magnetic alloy to increase the magnetic permeability 失效
标题翻译：用于处理磁性合金以提高磁导率的方法
公开(公告)号：US4003768A
公开(公告)日：1977-01-18
申请号：US549401
申请日：1975-02-12
申请人： Ronald L. Anderson , Eugene E. Castellani , Patrick M. McCaffrey , Lubomyr T. Romankiw
发明人： Ronald L. Anderson , Eugene E. Castellani , Patrick M. McCaffrey , Lubomyr T. Romankiw
IPC分类号： H01F1/147 , C21D6/00 , C22F1/10 , H01F1/14 , H01F10/00 , H01F10/14 , H01F41/14 , C21D1/04
CPC分类号： H01F10/00 , H01F1/14
摘要： A method for increasing the magnetic permeability of a magnetic alloy having an easy axis and a hard axis which comprises subjecting a body of the magnetic alloy to a magnetic field of at least about 40 Gauss oriented in the direction of the hard axis while the body is maintained at a temperature at or above that required to deposit the alloy on a substrate.
摘要翻译：一种用于提高具有易轴和硬轴的磁性合金的磁导率的方法，其包括使磁性合金体在至少约40高斯的磁场下沿着硬轴的方向取向，同时主体为保持在等于或高于将合金沉积在基底上所需的温度。

87. 发明授权

US3971710A Anodized articles and process of preparing same 失效
标题翻译：阳极氧化制品及其制备方法
公开(公告)号：US3971710A
公开(公告)日：1976-07-27
申请号：US528318
申请日：1974-11-29
申请人： Lubomyr T. Romankiw
发明人： Lubomyr T. Romankiw
IPC分类号： C25D11/02 , C25D17/00 , H01B3/00 , H01G9/00 , H01J17/04 , H01L21/28 , H01L21/3063 , H01L21/316 , H01L21/3205 , H01L21/321 , H01L21/768 , H05K3/02 , H05K3/46 , C25D5/02 , C25D11/00
CPC分类号： H01L21/31687 , C25D11/005 , H01L21/321 , H01L21/76888 , Y10T428/12528 , Y10T428/12535 , Y10T428/12611
摘要： An anodizing process includes depositing a first conductive layer on a dielectric layer; depositing a porous metal oxide-forming layer on the first conductive layer; anodizing the porous metal oxide-forming layer to provide porous anodized material; treating the first conductive layer to render it non-conductive. The process and articles fabricated thereby are especially suitable for use in multilevel metallurgical structures, and in electronic structures in which it is designed to have planar conductors.
摘要翻译：阳极氧化工艺包括在电介质层上沉积第一导电层; 在所述第一导电层上沉积多孔金属氧化物形成层; 阳极化多孔金属氧化物形成层以提供多孔阳极氧化材料; 处理第一导电层以使其不导电。由此制造的工艺和制品特别适用于多层冶金结构，以及在其被设计成具有平面导体的电子结构中。

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