专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

US07282733B2 Polythiophenes and devices thereof 有权
标题翻译：聚噻吩及其装置
公开(公告)号：US07282733B2
公开(公告)日：2007-10-16
申请号：US10832503
申请日：2004-04-27
申请人： Beng S. Ong , Ping Liu , Lu Jiang , Yu Qi , Yiliang Wu
发明人： Beng S. Ong , Ping Liu , Lu Jiang , Yu Qi , Yiliang Wu
IPC分类号： H01L35/24
CPC分类号： C08G61/126 , H01L51/0036 , H01L51/0043 , H01L51/0541 , H01L51/0545
摘要： An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.
摘要翻译：含有聚噻吩的电子器件，其中R表示侧链，m表示R取代基的数目; A是二价键; x，y和z分别表示在z为0或1的单体链段中的R m取代的噻吩基，未取代的噻吩基和二价键A的数目，n表示聚合物中重复单体链段的数量或聚合度。

82. 发明授权

US07112649B2 Polythiophenes and devices thereof 有权
标题翻译：聚噻吩及其装置
公开(公告)号：US07112649B2
公开(公告)日：2006-09-26
申请号：US11032711
申请日：2005-01-10
申请人： Ping Liu , Yiliang Wu , Lu Jiang , Beng S. Ong
发明人： Ping Liu , Yiliang Wu , Lu Jiang , Beng S. Ong
IPC分类号： C08G75/00
CPC分类号： C08G61/126 , C08G2261/1424 , C08G2261/3223 , H01B1/127 , H01L51/0036 , H01L51/0037 , H01L51/0541 , H01L51/0545
摘要： An electronic device containing a polythiophene prepared by a metal halide-mediated coupling polymerization in an appropriate solvent, and which polythiophene is comprised of at least one monomer unit selected from the group consisting of 2,5-thienylene (or 2,5-thiophenediyl) (I), 2,5-thienylene (or 2,5-thiophenediyl) (II), and a divalent linkage D wherein, for example, A is alkyl, alkoxy or derivatives thereof; B is a hydrogen atom, a small substituent like alkyl or alkoxy.
摘要翻译：一种含有通过金属卤化物介导的偶联聚合在合适溶剂中制备的聚噻吩的电子器件，该聚噻吩由至少一种选自2,5-亚噻吩基（或2,5-噻吩二基）（I），2,5-亚噻吩基（或2,5-噻吩二基）（II）和二价键D，其中例如A是烷基，烷氧基或其衍生物; B是氢原子，小的取代基如烷基或烷氧基。

83. 发明授权

US07049629B2 Semiconductor polymers and devices thereof 有权
标题翻译：半导体聚合物及其装置
公开(公告)号：US07049629B2
公开(公告)日：2006-05-23
申请号：US10646389
申请日：2003-08-22
申请人： Yiliang Wu , Ping Liu , Lu Jiang , Beng S. Ong
发明人： Yiliang Wu , Ping Liu , Lu Jiang , Beng S. Ong
IPC分类号： H01L35/24
CPC分类号： C07D333/08 , H01L51/0036 , H01L51/0043 , H01L51/0541 , H01L51/0545
摘要： An electronic device containing a thienylene-arylene polymer comprised of a repeating segment containing at least one 2,5-thienylene segment of (I) or (II), and at least one arylene segment of (IIIa), (IIIb), or (IIIc) wherein each R is independently an alkyl or an alkoxy side chain; R′ is halogen, alkyl, or alkoxy, and a and b represent the number of R segments or groups, and wherein the number of arylene segments (IIIa), (IIIb), and (IIIc) is from about 1 to about 3.
摘要翻译：包含由包含至少一个（I）或（II）的2,5-亚噻吩基链段的重复链段和至少一个（IIIa），（IIIb）或（IIIb）亚芳基链段组成的亚噻吩基亚芳基聚合物的电子器件， IIIc）其中每个R独立地是烷基或烷氧基侧链; R'是卤素，烷基或烷氧基，a和b表示R部分或基团的数目，并且其中亚芳基链段（IIIa），（IIIb）和（IIIc）的数目为约1至约3。

84. 发明授权

US07005672B2 Thin film transistor with a semiconductor layer that includes a gelable self-organizable polymer 有权
标题翻译：具有半导体层的薄膜晶体管，其包括可凝胶化的可自组织聚合物
公开(公告)号：US07005672B2
公开(公告)日：2006-02-28
申请号：US10720597
申请日：2003-11-24
申请人： Yiliang Wu , Ping Liu , Beng S. Ong , Dasarao K. Murti
发明人： Yiliang Wu , Ping Liu , Beng S. Ong , Dasarao K. Murti
IPC分类号： H01L29/786 , H01L51/00
CPC分类号： H01L51/0545 , C08G61/02 , C08G61/126 , H01L51/0003 , H01L51/0007 , H01L51/0012 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/052 , H01L51/0525 , H01L51/0541
摘要： A thin film transistor including: an insulating layer; a gate electrode; a semiconductor layer including coalesced structurally ordered polymer aggregates of a self-organizable polymer, wherein the self-organizable polymer is of a type capable of gelling; a source electrode; and a drain electrode, wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer.
摘要翻译：一种薄膜晶体管，包括：绝缘层; 栅电极; 包含可自组织聚合物的结合有序的聚合物聚集体的半导体层，其中所述自组织聚合物是能够凝胶化的类型; 源电极; 和漏电极，其中绝缘层，栅极电极，半导体层，源电极和漏极电极只要栅电极和半导体层都接触绝缘层，并且源电极并且漏电极都接触半导体层。

85. 发明授权

US06949762B2 Polythiophenes and devices thereof 有权
标题翻译：聚噻吩及其装置
公开(公告)号：US06949762B2
公开(公告)日：2005-09-27
申请号：US10042342
申请日：2002-01-11
申请人： Beng S. Ong , Ping Liu , Yiliang Wu , Yu Qi
发明人： Beng S. Ong , Ping Liu , Yiliang Wu , Yu Qi
IPC分类号： C08G61/12 , H01B1/12 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/30 , H01L35/24 , H01L51/40
CPC分类号： H01B1/127 , C08G61/126 , H01L51/0036 , H01L51/0043 , H01L51/0541 , H01L51/0545
摘要： An electronic device containing a polythiophene derived from a monomer segment or monomer segments containing two 2,5-thienylene segments, (I) and (II), and an optional divalent linkage D wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent linkage, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent linkages D is 0 or 1.
摘要翻译：含有衍生自单体链段的聚噻吩的电子装置或含有两个2,5-亚噻吩基链段（I）和（II）的单体链段和任选的二价键D，其中A是侧链; B是氢或侧链; 和D是二价键，其中单体链段中的A取代的亚噻吩基单元（I）的数目为约1至约10，B-取代的亚噻吩基单元（II）的数目为0至约5，并且二价键D的数目为0或1。

86. 发明授权

US06770904B2 Polythiophenes and electronic devices generated therefrom 有权
标题翻译：聚噻吩和从其产生的电子装置
公开(公告)号：US06770904B2
公开(公告)日：2004-08-03
申请号：US10042358
申请日：2002-01-11
申请人： Beng S. Ong , Ping Liu , Lu Jiang , Yu Qi , Yiliang Wu
发明人： Beng S. Ong , Ping Liu , Lu Jiang , Yu Qi , Yiliang Wu
IPC分类号： H01L3524
CPC分类号： C08G61/126 , H01L51/0036 , H01L51/0043 , H01L51/0541 , H01L51/0545
摘要： An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.
摘要翻译：含有聚噻吩并吡喃蛋白R的电子器件表示侧链，m表示R取代基的数目; A是二价键; x，y和z分别表示在z为0或1的单体链段中的R m取代的噻吩基，未取代的噻吩基和二价键A的数目，n表示聚合物中重复单体链段的数目或聚合度。

87. 发明授权

US08067264B2 Polythiophenes and devices thereof 有权
标题翻译：聚噻吩及其装置
公开(公告)号：US08067264B2
公开(公告)日：2011-11-29
申请号：US11782812
申请日：2007-07-25
申请人： Beng S. Ong , Ping Liu , Lu Jiang , Yu Qi , Yiliang Wu
发明人： Beng S. Ong , Ping Liu , Lu Jiang , Yu Qi , Yiliang Wu
IPC分类号： H01L51/40
CPC分类号： C08G61/126 , H01L51/0036 , H01L51/0043 , H01L51/0541 , H01L51/0545
摘要： An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.
摘要翻译：含有聚噻吩的电子器件，其中R表示侧链，m表示R取代基的数目; A是二价键; x，y和z分别表示在z为0或1的单体链段中的R m取代的噻吩基，未取代的噻吩基和二价键A的数目，n表示聚合物中重复单体链段的数目或聚合度。

88. 发明授权

US07700787B2 Small molecular thiophene compound 有权
标题翻译：小分子噻吩化合物
公开(公告)号：US07700787B2
公开(公告)日：2010-04-20
申请号：US11927871
申请日：2007-10-30
申请人： Beng S Ong , Ping Liu , Maria Birau , Yiliang Wu
发明人： Beng S Ong , Ping Liu , Maria Birau , Yiliang Wu
IPC分类号： C07D409/14
CPC分类号： H01L51/0036 , H01L51/0052 , H01L51/0068 , H01L51/0541 , H01L51/0545 , Y10T428/31504
摘要： A small molecular thiophene compound consisting of a plurality of thiophene units, each thiophene unit being represented by structure (A) wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position, wherein m is 0, 1, or 2, wherein each thiophene unit is the same or different from each other in terms of substituent number, substituent identity, and substituent position, wherein each R1 is independently selected from the group consisting of: (a) a hydrocarbon group, (b) a heteroatom containing group, and (c) a halogen, wherein there is at least one thiophene unit where R1 is present at the third ring position or the fourth ring position, or at both the third ring position and the fourth ring position, wherein for any two adjacent thiophene units as represented by structure (A1): there is excluded the simultaneous presence of the same or different R1 at the 3-position of one thiophene unit and at the 3′-position of the other thiophene unit wherein R1 is not part of a cyclic ring structure fused to the thiophene unit.
摘要翻译：由多个噻吩单元组成的小分子噻吩化合物，每个噻吩单元由结构（A）表示，其中每个噻吩单元在第二环位置和第五环位置的一个或两个上键合，其中m为0,1 或2，其中每个噻吩单元根据取代基号，取代基同一性和取代基位置彼此相同或不同，其中每个R 1独立地选自：（a）烃基，（b ）含有杂原子的基团，和（c）卤素，其中存在至少一个噻吩单元，其中R 1存在于第三环位置或第四环位置，或者位于第三环位置和第四环位置，其中对于由结构（A1）表示的任何两个相邻的噻吩单元：不排除在一个噻吩单元的3位和在另一个噻吩的3'-位上同时存在相同或不同的R 1 单元，其中R1不是与噻吩单元稠合的环状结构的一部分。

89. 发明授权

US07563860B2 Semiconductors and electronic devices generated therefrom 有权
标题翻译：由此产生的半导体和电子设备
公开(公告)号：US07563860B2
公开(公告)日：2009-07-21
申请号：US11399141
申请日：2006-04-06
申请人： Yiliang Wu , Ping Liu , Beng S. Ong
发明人： Yiliang Wu , Ping Liu , Beng S. Ong
IPC分类号： C08G75/00
CPC分类号： H01L51/0071 , C08G61/122 , C08G61/126 , C08G2261/3243 , C08G2261/344 , C08G2261/92 , C09B17/02 , C09B17/04 , H01L51/0036 , H01L51/006 , H01L51/0061 , H01L51/0541 , H01L51/0545
摘要： An electronic device containing a polymer of Formula (I), Formula (II), or mixtures, or isomers thereof wherein each R1 through R10 is independently hydrogen, alkyl, aryl, alkoxy, halogen, arylalkyl, cyano, or nitro providing that R1 and R2 exclude halogen, nitro and cyano; a and b represent the number of rings; and n represents the number of repeating groups or moieties.
摘要翻译：包含式（I），式（II）的聚合物或其混合物或异构体的电子器件，其中每个R 1至R 10独立地为氢，烷基，芳基，烷氧基，卤素，芳烷基，氰基或硝基，条件是R 1和 R2不包括卤素，硝基和氰基; a和b表示环数; 并且n表示重复基团或部分的数目。

90. 发明授权

US07553706B2 TFT fabrication process 有权
标题翻译： TFT制造工艺
公开(公告)号：US07553706B2
公开(公告)日：2009-06-30
申请号：US11276634
申请日：2006-03-08
申请人： Ping Liu , Yiliang Wu , Beng S Ong
发明人： Ping Liu , Yiliang Wu , Beng S Ong
IPC分类号： H01L21/00
CPC分类号： H01L29/513 , H01L51/0036 , H01L51/0097 , H01L51/052 , H01L51/0529 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： A process for fabricating a thin film transistor including: (a) depositing a semiconductor layer; and (b) depositing a multilayer gate dielectric prior to or subsequent to the depositing the semiconductor layer, wherein the multilayer dielectric comprises: (i) a first layer comprising a first material selected from the group consisting of an optionally substituted silsesquioxane, an optionally substituted silsesquioxane-metal oxide hybrid composition, an optionally substituted siloxane-metal oxide hybrid composition, and a mixture thereof, and (ii) a second layer in contact with the first layer, wherein the second layer comprises a second material, wherein the first layer is closer to the semiconductor layer than the second layer.
摘要翻译：一种制造薄膜晶体管的方法，包括：（a）沉积半导体层; 以及（b）在沉积半导体层之前或之后沉积多层栅极电介质，其中所述多层电介质包括：（i）第一层，其包含选自任选取代的倍半硅氧烷，任选取代的第一材料倍半硅氧烷 - 金属氧化物杂化组合物，任选取代的硅氧烷 - 金属氧化物杂化组合物及其混合物，和（ii）与第一层接触的第二层，其中第二层包括第二材料，其中第一层为比第二层更靠近半导体层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式