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    • 81. 发明授权
    • Field emission display
    • 场发射显示
    • US08299698B2
    • 2012-10-30
    • US13159609
    • 2011-06-14
    • Peng LiuShou-Shan FanLiang LiuKai-Li Jiang
    • Peng LiuShou-Shan FanLiang LiuKai-Li Jiang
    • H01J1/62
    • H01J29/02H01J31/127
    • A field emission device includes a transparent plate, an insulating substrate, one or more grids located on the insulating substrate. Each grid includes a first, second, third and fourth electrode down-leads and a pixel unit. The first, second, third and fourth electrode down-leads are located on the periphery of the grid. The first and the second electrode down-leads are parallel to each other. The third and the fourth electrode down-leads are parallel to each other. The pixel unit includes a phosphor layer, a first electrode, a second electrode and at least one electron emitter. The first electrode and the second electrode are separately located. The first electrode is electrically connected to the first electrode down-lead, and the second electrode is electrically connected to the third electrode down-lead. The phosphor layer is directly located on the corresponding first electrode.
    • 场发射器件包括透明板,绝缘衬底,位于绝缘衬底上的一个或多个栅极。 每个栅格包括第一,第二,第三和第四电极下引线和像素单元。 第一,第二,第三和第四电极下引线位于电网的外围。 第一和第二电极下引线彼此平行。 第三和第四电极下引线彼此平行。 像素单元包括荧光体层,第一电极,第二电极和至少一个电子发射体。 第一电极和第二电极分开设置。 第一电极与第一电极下引线电连接,第二电极与第三电极下引线电连接。 磷光体层直接位于相应的第一电极上。
    • 82. 发明授权
    • Field emission display device
    • 场致发射显示装置
    • US08110975B2
    • 2012-02-07
    • US12317146
    • 2008-12-19
    • Peng LiuLiang LiuKai-Li JiangShou-Shan Fan
    • Peng LiuLiang LiuKai-Li JiangShou-Shan Fan
    • H01J1/62
    • H01J29/04H01J31/127
    • A field emission device includes an insulating substrate, one or more grids located on the insulating substrate. Each grid includes a first, second, third and fourth electrode down-leads and an electron emitting unit. The first, second, third and fourth electrode down-leads are located on the periphery of the grid. The first and the second electrode down-leads are parallel to each other. The third and the fourth electrode down-leads are parallel to each other. The electron emitting unit includes a first electrode, a second electrode and at least one electron emitter. The first electrode is electrically connected to the first electrode down-lead, and the second electrode is electrically connected to the third electrode down-lead. One end of the electron emitter is connected to the second electrode and an opposite end of the electron emitter is spaced from the first electrode by a predetermined distance.
    • 场发射器件包括绝缘衬底,位于绝缘衬底上的一个或多个栅极。 每个栅格包括第一,第二,第三和第四电极下引线和电子发射单元。 第一,第二,第三和第四电极下引线位于电网的外围。 第一和第二电极下引线彼此平行。 第三和第四电极下引线彼此平行。 电子发射单元包括第一电极,第二电极和至少一个电子发射器。 第一电极与第一电极下引线电连接,第二电极与第三电极下引线电连接。 电子发射器的一端连接到第二电极,并且电子发射器的相对端与第一电极间隔预定距离。
    • 88. 发明申请
    • Thermionic emission device
    • 热电子发射装置
    • US20090167136A1
    • 2009-07-02
    • US12288863
    • 2008-10-23
    • Peng LiuLiang LiuKai-Li JiangShou-Shan Fan
    • Peng LiuLiang LiuKai-Li JiangShou-Shan Fan
    • H01J1/46
    • H01J1/15H01J1/13H01J29/04H01J31/127H01J2329/0402
    • A thermionic emission device includes an insulating substrate, and one or more grids located thereon. Each grid includes a first, second, third and fourth electrode down-leads located on the periphery thereof, and a thermionic electron emission unit therein. The first and second electrode down-leads are parallel to each other. The third and fourth electrode down-leads are parallel to each other. The first and second electrode down-leads are insulated from the third and fourth electrode down-leads. The thermionic electron emission unit includes a first electrode, a second electrode, and a thermionic electron emitter. The first electrode and the second electrode are separately located and electrically connected to the first electrode down-lead and the third electrode down-lead respectively. The insulating substrate comprises one or more recesses that further insulate the thermionic electron emitters from the substrate.
    • 热电子发射装置包括绝缘基板和位于其上的一个或多个网格。 每个栅格包括位于其周边上的第一,第二,第三和第四电极下引线及其中的热离子电子发射单元。 第一和第二电极下引线彼此平行。 第三和第四电极下引线彼此平行。 第一和第二电极下引线与第三和第四电极下引线绝缘。 热电子发射单元包括第一电极,第二电极和热离子电子发射体。 第一电极和第二电极分别位于第一电极下引线和第三电极引线下电连接。 绝缘衬底包括一个或多个凹部,其进一步将热离子电子发射体与衬底绝缘。
    • 89. 发明申请
    • Reference leak
    • 参考泄漏
    • US20060144120A1
    • 2006-07-06
    • US11228821
    • 2005-09-16
    • Jie TangLiang LiuPeng LiuZhao-Fu HuBing-Chu DuCai-Lin GuoPi-Jin ChenShou-Shan Fan
    • Jie TangLiang LiuPeng LiuZhao-Fu HuBing-Chu DuCai-Lin GuoPi-Jin ChenShou-Shan Fan
    • G01F25/00
    • G01M3/007
    • A reference leak includes a leak layer formed of one of a metallic material, a glass material, and a ceramic material. The metallic material is selected from the group consisting of copper, nickel, and molybdenum. The leak layer comprises a number of substantially parallel leak through holes defined therein. The leak through holes may be cylindrical holes or polyhedrical holes. A length of each of the leak through holes is preferably not less than 20 times a diameter thereof. A diameter of each of the leak through holes is generally in the range from 10 nm to 500 nm. A length of each of the leak through holes is generally in the range from 100 nm to 100 μm. A leak rate of the reference leak is in the range from 10−8 to 10−15 tor×l/s. The leak through holes have substantially same length and diameter.
    • 参考泄漏包括由金属材料,玻璃材料和陶瓷材料之一形成的泄漏层。 金属材料选自铜,镍和钼。 泄漏层包括限定在其中的多个基本上平行的泄漏通孔。 泄漏孔可以是圆柱形孔或多面孔。 每个泄漏通孔的长度优选不小于其直径的20倍。 每个泄漏通孔的直径通常在10nm至500nm的范围内。 每个泄漏通孔的长度通常在100nm至100μm的范围内。 参考泄漏的泄漏率在10 -8至10 -15 torxl / s的范围内。 泄漏孔具有基本相同的长度和直径。