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81. 发明申请

US20080128619A1 Infrared Imaging Element 审中-公开
标题翻译：红外成像元件
公开(公告)号：US20080128619A1
公开(公告)日：2008-06-05
申请号：US10589619
申请日：2004-02-16
申请人： Shinji Yoshida , Daisuke Ueda
发明人： Shinji Yoshida , Daisuke Ueda
IPC分类号： G01J1/02
CPC分类号： H01C7/045 , G01J5/20 , H01C7/06 , H01L27/16 , H01L31/09 , H01L37/00 , H01L41/094 , H04N5/33
摘要： To provide an infrared imaging device having a higher temperature resolution that includes a plurality of pixel cells (1a-1d) arranged one-dimensionally or two-dimensionally, in which each pixel cell includes a thermal resistor composed of a strongly-correlated electron material.
摘要翻译：为了提供具有更高温度分辨率的红外成像装置，其包括一维或二维排列的多个像素单元（1a-1d），其中每个像素单元包括由强相关电子材料。

82. 发明授权

US07375407B2 Schottky barrier diode and integrated circuit using the same 有权
标题翻译：肖特基势垒二极管和集成电路使用相同
公开(公告)号：US07375407B2
公开(公告)日：2008-05-20
申请号：US11271833
申请日：2005-11-14
申请人： Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/47
CPC分类号： H01L29/66143 , H01L29/872
摘要： A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance than the first semiconductor layer and the second semiconductor layer. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer in a portion surrounded with the high-resistance region.
摘要翻译：肖特基势垒二极管包括依次形成在衬底上的第一半导体层和第二半导体层; 以及形成在第一半导体层和第二半导体层中并且具有比第一半导体层和第二半导体层更高的电阻的高电阻区域。彼此间隔开的肖特基电极和欧姆电极在被高电阻区域包围的部分中形成在第二半导体层上。

83. 发明申请

US20070257595A1 ELECTRON EMITTING DEVICE AND ELECTROMAGNETIC WAVE GENERATING DEVICE USING THE SAME 有权
标题翻译：电子发射装置和使用该电子发射装置的电磁波产生装置
公开(公告)号：US20070257595A1
公开(公告)日：2007-11-08
申请号：US11620076
申请日：2007-01-05
申请人： Yutaka Hirose , Daisuke Ueda
发明人： Yutaka Hirose , Daisuke Ueda
IPC分类号： H01J99/00
CPC分类号： H01J1/304 , B82Y10/00 , H01J9/025 , H01J2201/30469 , Y10T29/49002
摘要： Provided is an electron emitting device which can achieve high electron emission efficiency even in the case where excitation energy is low. The device includes a carbon nanotube layer which is formed on an SiC substrate and is made up of plural carbon nanotubes vertically oriented with respect to a surface of the SiC substrate; an MgO layer which is formed on and touches the carbon nanotube layer; an ohmic electrode which is connected to the carbon nanotube layer; an electrode which is facing the MgO layer with an air-gap between the MgO layer and the electrode; and a voltage source which applies a voltage between the electrode and the ohmic electrode.
摘要翻译：提供了即使在激发能量低的情况下也能够实现高电子发射效率的电子发射器件。该装置包括碳纳米管层，其形成在SiC衬底上并且由相对于SiC衬底的表面垂直取向的多个碳纳米管构成; 形成在碳纳米管层上并与其接触的MgO层; 连接到碳纳米管层的欧姆电极; 在MgO层和电极之间具有气隙的面向MgO层的电极; 以及在电极和欧姆电极之间施加电压的电压源。

84. 发明申请

US20070170463A1 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20070170463A1
公开(公告)日：2007-07-26
申请号：US11647218
申请日：2006-12-29
申请人： Hiroaki Ueno , Manabu Yanagihara , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hiroaki Ueno , Manabu Yanagihara , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L31/00
CPC分类号： H01L29/7783 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/432 , H01L29/452 , H01L29/7787
摘要： A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.
摘要翻译：氮化物半导体器件包括：由第一氮化物半导体制成的第一半导体层; 第二半导体层，其形成在第一半导体层的主表面上并且由具有比第一氮化物半导体的带隙宽的第二氮化物半导体构成; 选择性地形成在所述第二半导体层的上部并且由上述第二半导体层的上部制成的具有p型导电性的第三氮化物半导体的控制层; 源极和漏极，形成在控制层的相应侧上的第二半导体层上; 形成在所述控制层上的栅电极; 以及形成在与所述主表面相对的所述第一半导体层的表面上的第四半导体层，所述第四半导体层相对于所述第一氮化物半导体具有价带中的势垒，并且由包含铝的第四氮化物半导体制成。

85. 发明申请

US20070026676A1 Via hole machining for microwave monolithic integrated circuits 有权
标题翻译：微波单片集成电路的通孔加工
公开(公告)号：US20070026676A1
公开(公告)日：2007-02-01
申请号：US11194419
申请日：2005-08-01
申请人： Ming Li , Xinbing Liu , Hiroyuki Sakai , Masaaki Nishijima , Daisuke Ueda
发明人： Ming Li , Xinbing Liu , Hiroyuki Sakai , Masaaki Nishijima , Daisuke Ueda
IPC分类号： H01L21/302
CPC分类号： B23K26/0624 , B23K26/40 , B23K2103/50
摘要： A method for forming a via in a sapphire substrate with a laser machining system that includes an ultrafast pulsed laser source. The sapphire substrate is provided. Pulses of laser light are substantially focused to a beam spot on the first surface of the sapphire substrate such that each focused pulse of laser light ablates a volume of the sapphire substrate having a depth less than the substrate thickness. The beam spot of the focused laser light pulses is scanned over a via portion of the first surface of the sapphire substrate. The sapphire substrate is moved in a direction substantially normal to the first surface to control the volume of the sapphire substrate ablated by each pulse of laser light to be substantially constant. The pulsing and scanning steps are repeated until the via is formed extending from the first surface to the second surface of the sapphire substrate.
摘要翻译：一种在具有包括超快脉冲激光源的激光加工系统的蓝宝石衬底中形成通孔的方法。提供蓝宝石衬底。激光的脉冲基本上聚焦到蓝宝石衬底的第一表面上的束斑上，使得每个聚焦的激光脉冲消除了具有小于衬底厚度的深度的蓝宝石衬底的体积。聚焦激光脉冲的束斑在蓝宝石衬底的第一表面的通孔部分上扫描。蓝宝石衬底沿着基本上垂直于第一表面的方向移动，以控制由每个激光脉冲消融的蓝宝石衬底的体积基本恒定。重复脉冲和扫描步骤，直到形成从蓝宝石衬底的第一表面延伸到第二表面的通孔。

86. 发明授权

US07133431B2 Semiconductor laser device and method for fabricating the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07133431B2
公开(公告)日：2006-11-07
申请号：US10629670
申请日：2003-07-30
申请人： Kazutoshi Onozawa , Tetsuzo Ueda , Daisuke Ueda
发明人： Kazutoshi Onozawa , Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H01S5/00
CPC分类号： H01S5/02252 , G11B7/1275 , G11B7/22 , G11B2007/0006 , H01L24/95 , H01L2224/95085 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/01049 , H01L2924/10329 , H01L2924/10349 , H01L2924/12042 , H01L2924/14 , H01S5/02236 , H01S5/4031 , H01L2924/00
摘要： A semiconductor laser device includes a substrate which is made of, e.g., silicon and which has in its principal surface first and second recessed portions formed at a distance from each other. Disposed in the first recessed portion is a first semiconductor laser chip in the form of a function block, which emits an infrared laser beam. Disposed in the second recessed portion is a second semiconductor laser chip in the form of a function block, which emits a red laser beam.
摘要翻译：半导体激光器件包括由例如硅制成并且在其主表面中形成有彼此间隔一定距离的第一和第二凹部的衬底。设置在第一凹部中的是发射红外激光束的功能块形式的第一半导体激光器芯片。设置在第二凹部中的是发射红色激光束的功能块形式的第二半导体激光器芯片。

87. 发明申请

US20060203860A1 Laser device and laser module 审中-公开
标题翻译：激光设备和激光模块
公开(公告)号：US20060203860A1
公开(公告)日：2006-09-14
申请号：US11352948
申请日：2006-02-13
申请人： Kenichi Inoue , Kazuhiko Yamanaka , Kazutoshi Onozawa , Daisuke Ueda
发明人： Kenichi Inoue , Kazuhiko Yamanaka , Kazutoshi Onozawa , Daisuke Ueda
IPC分类号： H01S3/10
CPC分类号： H01S5/02292 , H01S5/005 , H01S5/0071 , H01S5/02248 , H01S5/4012 , H01S5/4087
摘要： A laser module includes a substrate 1, a first laser element 2 placed on the substrate 1, a second laser element 3 placed with an output surface opposed to the first laser element 2 on the substrate 1, and a mirror 7 placed between the first laser element 2 and the second laser element 3. The mirror 7 has a reflective surface capable of reflecting output light from the first laser element 2 or the second laser element 3 in a predetermined direction, and is placed so as to move or rotate between a first position capable of reflecting the output light from the first laser element 2 and a second position capable of reflecting the output light from the second laser element 3. Thus, a laser module can be provided in which high precision, low cost, and miniaturization can be realized.
摘要翻译：激光模块包括基板1，放置在基板1上的第一激光元件2，在基板1上设置有与第一激光元件2相对的输出面的第二激光元件3，以及配置在第一激光器元件2和第二激光元件3。反射镜7具有反射表面，该反射表面能够沿预定方向反射来自第一激光元件2或第二激光元件3的输出光，并且能够在能够反射来自第一激光元件2或第二激光元件3的输出光的第一位置之间移动或旋转第一激光元件2和能够反射来自第二激光元件3的输出光的第二位置。因此，可以提供可以实现高精度，低成本和小型化的激光模块。

88. 发明授权

US07064359B2 Switching semiconductor device and switching circuit 有权
标题翻译：开关半导体器件和开关电路
公开(公告)号：US07064359B2
公开(公告)日：2006-06-20
申请号：US10912567
申请日：2004-08-06
申请人： Hidetoshi Ishida , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hidetoshi Ishida , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/42316 , H01L29/2003 , H01L29/7787 , Y10S257/918
摘要： A switching semiconductor device includes a first compound layer formed on a single crystal substrate which includes silicon carbide or sapphire, and including a general formula InxGa1-xN, where 0≦x≦1; a second compound layer formed on the first compound layer, and including a general formula InyALzGa1-y-zN, where 0≦y≦1 and 0
摘要翻译：开关半导体器件包括形成在包括碳化硅或蓝宝石的单晶衬底上的第一复合层，并且包括通式为N 1 Ga 1-x N，其中 0 <= x <= 1; 形成在第一化合物层上的第二化合物层，并且包含通式为Y 1，Y z，Ga 1-y z N，其中0 < = y <= 1，0

89. 发明申请

US20060108659A1 Schottky barrier diode and diode array 有权
公开(公告)号：US20060108659A1
公开(公告)日：2006-05-25
申请号：US11272878
申请日：2005-11-15
申请人： Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L31/07
CPC分类号： H01L29/872 , H01L21/26506 , H01L27/0605 , H01L27/0814 , H01L29/0692 , H01L29/417 , H01L29/66143
摘要： A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a semiconductor substrate with a buffer layer formed between the first and second semiconductor layers and the semiconductor substrate. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer, and a back face electrode is formed on the back face of the semiconductor substrate. The Schottky electrode or the ohmic electrode is electrically connected to the back face electrode through a via penetrating through at least the buffer layer.

90. 发明授权

US07045446B2 Semiconductor device fabrication method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US07045446B2
公开(公告)日：2006-05-16
申请号：US10840422
申请日：2004-05-07
申请人： Kazutoshi Onozawa , Daisuke Ueda , Tomoaki Tojo
发明人： Kazutoshi Onozawa , Daisuke Ueda , Tomoaki Tojo
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L24/95 , H01L21/67121 , H01L25/50 , H01L2224/95085 , H01L2224/95136 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01033 , H01L2924/01049 , H01L2924/01078 , H01L2924/10329 , H01L2924/10349 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： In a semiconductor device fabrication method using a fluidic self-assembly technique in which in a liquid, a plurality of semiconductor elements are mounted in a self-aligned manner on a substrate with a plurality of recessed portions formed therein, protruding potions that are inserted in the respective recessed portions of the substrate are formed in the lower portions of the respective semiconductor elements, the liquid in which the semiconductor elements have been spread is poured over the substrate intermittently, and the substrate is rotated in a period of time in which the liquid is not poured.
摘要翻译：在使用流体自组装技术的半导体器件制造方法中，其中在液体中，多个半导体元件以自对准的方式安装在其上形成有多个凹部的基板上，插入的突出的部分基板的各凹部形成在各半导体元件的下部，将半导体元件已经被分散的液体间歇地注入到基板上，并且使基板在液体不倒

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