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81. 发明授权

US06983254B2 Method and apparatus for accepting and processing an application for conformity of a user dictionary to a standard dictionary 失效
标题翻译：用于接受和处理用户字典符合标准词典的应用程序的方法和装置
公开(公告)号：US06983254B2
公开(公告)日：2006-01-03
申请号：US09910848
申请日：2001-07-24
申请人： Satoshi Ito
发明人： Satoshi Ito
IPC分类号： G06F17/60
CPC分类号： G06Q10/087 , G06Q30/0601
摘要： There is disclosed an electronic catalog system in which application data concerning use is received from a user who desires to utilize electronic catalog information using a standard dictionary, internal utilization or opening to the outside of the standard supplier by the user is judged, and for the internal utilization, the standard dictionary and a program for verifying a conformity level are distributed free of charge. If the user desires the opening to the outside including an information providing service, a charged amount is transmitted to the user from charging level data based on the application data, a supplier code is issued after agreement with the user, and the standard dictionary is transmitted together with the program for verifying the desired conformity level.
摘要翻译：公开了一种电子目录系统，其中从使用标准字典的使用电子目录信息的用户接收关于使用的应用数据，判断用户对标准供应商的内部利用或开放状态，并且对于内部利用，标准字典和验证一致性级别的程序免费分发。如果用户期望向外部打开包括信息提供服务，则根据应用数据从收费级数据向用户发送收费金额，在与用户一致之后发出供应商代码，并且发送标准字典以及验证所需符合程度的程序。

82. 发明授权

US06928402B2 Method to support the setup of input parameters 失效
标题翻译：支持输入参数设置的方法
公开(公告)号：US06928402B2
公开(公告)日：2005-08-09
申请号：US09748390
申请日：2000-12-27
申请人： Shirun Ho , Miyuki Saji , Sigeo Ihara , Satoshi Ito
发明人： Shirun Ho , Miyuki Saji , Sigeo Ihara , Satoshi Ito
IPC分类号： H01L29/00 , G06F9/45 , G06F9/455 , G06F17/50 , G06F19/00 , H01L21/3065 , H01L21/82
CPC分类号： G06F17/5022
摘要： Values of input parameters are set. Simulations are executed in parallel for individual sets of input parameters by a plurality of processors to obtain design values which are execution results. The obtained design values are compared with the design condition. Directory files are constructed for plural kinds of input parameters corresponding to design values satisfying the design condition. Accumulative distribution in the distribution of parameter input values are determined in respect of the individual kinds of input parameters. Input values of parameters to be referred are extracted on the basis of values of the accumulative distribution every kind of input parameter. The kind of input parameter, the extracted input values and the number of the extracted input values are displayed through an input interface every kind of input parameter.
摘要翻译：输入参数的值被设置。通过多个处理器对各组输入参数并行执行模拟，以获得作为执行结果的设计值。将获得的设计值与设计条件进行比较。目录文件被构造成与满足设计条件的设计值对应的多种输入参数。参数输入值分布中的累积分布是针对各种输入参数确定的。基于各种输入参数的累积分布的值来提取要参考的参数的输入值。通过输入接口显示输入参数的类型，提取的输入值和提取的输入值的数量，每种输入参数。

83. 发明授权

US06171738B2 Method of preparing silver halide emulsion 失效
标题翻译：制备卤化银乳剂的方法
公开(公告)号：US06171738B2
公开(公告)日：2001-01-09
申请号：US09052728
申请日：1998-03-31
申请人： Hiroshi Takada , Sadayasu Ishikawa , Satoshi Ito
发明人： Hiroshi Takada , Sadayasu Ishikawa , Satoshi Ito
IPC分类号： G03C1015
CPC分类号： G03C1/015 , G03C1/0051
摘要： A method for preparing a silver halide emulsion is disclosed, wherein the method controls a mean intergrain distance in the process of growing silver halide grains contained in a silver halide emulsion, as defined below, over a period of from the start of growing silver halide grains to completion thereof: Mean intergrain distance=(Volume of the reaction mixture solution/number of grains in the reaction mixture solution)⅓.
摘要翻译：公开了一种制备卤化银乳剂的方法，其中该方法控制如下定义的卤化银乳剂中所含的卤化银颗粒的生长过程中卤化银颗粒生长的时间段内的平均颗粒间距离完成：

84. 发明授权

US6163799A Communication navigation system which easily finds person who is interested in the same topic 失效
标题翻译：通信导航系统，轻松找到对同一主题感兴趣的人
公开(公告)号：US6163799A
公开(公告)日：2000-12-19
申请号：US50073
申请日：1998-03-30
申请人： Toru Kambayashi , Ichiro Tomoda , Yasuhiko Shimomura , Takashi Ida , Hirofumi Muratani , Toshiya Takahashi , Masafumi Kondo , Satoshi Ito , Shuichi Tsujimoto , Akira Morishita , Yoshihiro Ohmori
发明人： Toru Kambayashi , Ichiro Tomoda , Yasuhiko Shimomura , Takashi Ida , Hirofumi Muratani , Toshiya Takahashi , Masafumi Kondo , Satoshi Ito , Shuichi Tsujimoto , Akira Morishita , Yoshihiro Ohmori
IPC分类号： G06F17/30 , G06F15/16
CPC分类号： G06F17/30899 , G06F17/30067
摘要： A navigation communication system in which a plurality of clients access information stored in a server via a network, having a personal information control section provided in the server and controls the personal information of the users of the clients which access the same information and a personal information display section provided in the client and displays the personal information controlled by the personal information control section, a selector for selecting one of the personal information displayed, and a communication application section for communicating with a client corresponding to the selected personal information.
摘要翻译：一种导航通信系统，其中多个客户端经由网络访问存储在服务器中的信息，具有设置在服务器中的个人信息控制部分，并且控制访问相同信息的客户端的用户的个人信息和个人信息显示由个人信息控制部分控制的个人信息，用于选择显示的个人信息之一的选择器和用于与所选择的个人信息相对应的客户端进行通信的通信应用部分。

85. 发明授权

US5976916A Method of producing semiconductor device and encapsulating pellet employed therein 失效
标题翻译：制造半导体器件的方法和其中使用的封装颗粒
公开(公告)号：US5976916A
公开(公告)日：1999-11-02
申请号：US737137
申请日：1996-11-07
申请人： Makoto Kuwamura , Kazuhiro Ikemura , Shinya Akizuki , Takashi Fukushima , Shinichiro Sudo , Satoshi Ito
发明人： Makoto Kuwamura , Kazuhiro Ikemura , Shinya Akizuki , Takashi Fukushima , Shinichiro Sudo , Satoshi Ito
IPC分类号： H01L21/54 , H01L23/13 , H01L23/24 , H01L21/56
CPC分类号： H01L23/13 , H01L21/54 , H01L23/24 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/49109 , H01L2224/73265 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2924/00014 , H01L2924/00015 , H01L2924/10253 , H01L2924/15311 , H01L2924/1532 , H01L2924/181
摘要： A method of production of a semiconductor device such as a plastic pin grid array (PPGA) and a plastic ball grid array (PBGA) having a cavity-fill form. In this method, first, a semiconductor element (3) is placed in a cavity (6) formed in a multiple step-like substrate (2). Under this state, a pellet (7), which is in a solid state at a normal temperature, made of an encapsulating resin composition containing specific components, and has specific characteristics, is placed on the semiconductor element (3). Next, the semiconductor device is heated so that the pellet can melt to fill the cavity (6) with the composition, thereby encapsulating the semiconductor device (3). According to the present invention, a semiconductor device having low stress performance and excellent moisture-proof reliability can be efficiently produced.
摘要翻译： PCT No.PCT / JP96 / 00523 Sec。 371日期：1996年11月7日 102（e）1996年11月7日PCT PCT 1996年3月5日PCT公布。第WO96 / 27900号公报日期1996年9月12日制造具有空穴填充形式的诸如塑料针栅格阵列（PPGA）和塑料球栅阵列（PBGA）的半导体器件的制造方法。在该方法中，首先，将半导体元件（3）放置在形成于多台阶状基板（2）中的空腔（6）中。在这种状态下，在半导体元件（3）上放置由常规温度为固态的由具有特定成分的包封树脂组合物形成的具有特定特性的颗粒（7）。接下来，加热半导体器件，使得颗粒可以熔化以用组合物填充空腔（6），从而封装半导体器件（3）。根据本发明，可以有效地制造具有低应力性能和优异的防湿可靠性的半导体器件。

86. 发明授权

US5865897A Method of producing film of nitrogen-doped II-VI group compound semiconductor 失效
标题翻译：氮掺杂II-VI族化合物半导体膜的制备方法
公开(公告)号：US5865897A
公开(公告)日：1999-02-02
申请号：US596384
申请日：1996-02-09
申请人： Satoshi Ito , Satoshi Taniguchi , Masao Ikeda , Hiroyuki Okuyama , Hironori Tsukamoto , Masaharu Nagai , Koshi Tamamura
发明人： Satoshi Ito , Satoshi Taniguchi , Masao Ikeda , Hiroyuki Okuyama , Hironori Tsukamoto , Masaharu Nagai , Koshi Tamamura
IPC分类号： C23C14/00 , C23C14/06 , C30B23/02 , H01L21/363 , H01L21/365 , H01L33/00 , H01L33/28 , H05H13/00
CPC分类号： H01L33/285 , C23C14/0026 , C23C14/0629 , C30B23/02 , C30B29/48 , H01L21/02395 , H01L21/02463 , H01L21/02474 , H01L21/02477 , H01L21/02551 , H01L21/0256 , H01L21/02579 , H01L21/02631 , H01L33/0087
摘要： A film of a II-VI group compound semiconductor of at least one of elements belonging to the II group of the periodic table and at least one of elements belonging to the VI group of the periodic table is deposited on a substrate. When the film is deposited on the substrate, a plasma of nitrogen in an excited state is applied to the substrate while removing charged particles from said plasma by a charged particle removing means. The deposited film of a nitrogen-doped II-VI group compound semiconductor has an increased percentage of activated nitrogen atoms and improved crystallinity.
摘要翻译： PCT No.PCT / JP95 / 00854 Sec。 371日期1996年2月9日 102（e）日期1996年2月9日PCT提交1995年4月28日PCT公布。公开号WO95 / 34093 日期1995年12月14日属于周期表II族的至少一种元素的II-VI族化合物半导体的膜和属于周期表的VI族的元素中的至少一种沉积在基板上。当膜沉积在衬底上时，将激发态的氮等离子体施加到衬底上，同时通过带电粒子去除装置从所述等离子体中除去带电粒子。氮掺杂的II-VI族化合物半导体的沉积膜具有增加的活性氮原子百分比和改善的结晶度。

87. 发明授权

US5832229A Multicast communication system allows user to join or leave multicast groups and specify communication quality using easily comprehensible and operable user terminal display 失效
标题翻译：组播通信系统允许用户使用易于理解和可操作的用户终端显示来加入或离开多播组并指定通信质量
公开(公告)号：US5832229A
公开(公告)日：1998-11-03
申请号：US687627
申请日：1996-07-26
申请人： Ichiro Tomoda , Toru Kambayashi , Satoshi Ito , Takashi Ida , Yasuhiko Shimomura , Toshiya Takahashi , Hirofumi Muratani , Masafumi Kondo
发明人： Ichiro Tomoda , Toru Kambayashi , Satoshi Ito , Takashi Ida , Yasuhiko Shimomura , Toshiya Takahashi , Hirofumi Muratani , Masafumi Kondo
IPC分类号： H04N7/10 , G09G5/00 , G09G5/08 , H04L12/18 , H04L29/06 , G06F13/00
CPC分类号： H04L65/4076 , H04L12/185 , H04L29/06 , H04L29/06027
摘要： The multicast communication scheme which can enable a user to easily comprehend the multicast groups existing on the network, easily carry out an operation to join a desired multicast group, and easily specify a desired communication quality. At each user terminal, a virtual space with a plurality of regions defined therein in correspondence to a plurality of multicast groups is displayed on a screen, while an information indicating a range of each region in the virtual space is stored in correspondence to an address information for a corresponding multicast group. A desired position in the virtual space on the screen is specified by an input device, and joining/leaving to/from multicast groups is controlled by using the address information stored in correspondence to a region in the virtual space which contains the desired position. The display on the screen may include a plurality of zones defined within each region in correspondence to a plurality of different communication qualities, so that a communication quality of a multicast communication to be received can be controlled according to a zone within a region in the virtual space which contains the desired position.
摘要翻译：可以使得用户能够容易地理解存在于网络上的多播组的组播通信方案容易地执行加入所需多播组的操作，并且容易地指定期望的通信质量。在每个用户终端处，在屏幕上显示具有与多个多播组对应地定义的多个区域的虚拟空间，同时根据地址信息存储指示虚拟空间中的每个区域的范围的信息为相应的组播组。屏幕上的虚拟空间中的期望位置由输入设备指定，并且通过使用与包含期望位置的虚拟空间中的区域相对应地存储的地址信息来控制来自/来自多播组的加入/离开。屏幕上的显示可以包括对应于多个不同通信质量在每个区域内定义的多个区域，从而可以根据虚拟的区域内的区域来控制要接收的多播通信的通信质量包含所需位置的空间。

88. 发明授权

US5828086A Semiconductor light emitting device with a Mg superlattice structure 失效
标题翻译：具有Mg超晶格结构的半导体发光器件
公开(公告)号：US5828086A
公开(公告)日：1998-10-27
申请号：US826108
申请日：1997-03-24
申请人： Akira Ishibashi , Satoshi Matsumoto , Masaharu Nagai , Satoshi Ito , Shigetaka Tomiya , Kazushi Nakano , Etsuo Morita
发明人： Akira Ishibashi , Satoshi Matsumoto , Masaharu Nagai , Satoshi Ito , Shigetaka Tomiya , Kazushi Nakano , Etsuo Morita
IPC分类号： H01L33/06 , H01L33/28 , H01S5/30 , H01S5/32 , H01S5/347 , H01L33/00
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/06 , H01S5/347 , H01S2304/02 , H01S5/3059 , H01S5/3216
摘要： A semiconductor light emitting device ccomprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still anothr semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, a first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.
摘要翻译：半导体发光器件包括堆叠在半导体衬底上的第一覆层，有源层和第二覆层。第一包层和第二包层的至少一部分具有包含II-VI化合物半导体的超晶格结构。另一种半导体发光器件包括堆叠在半导体衬底上的第一覆层，第一引导层，有源层，第二引导层和第二覆层。第一包覆层，第一引导层，第二覆盖层和第二引导层的至少一部分具有超晶格结构。还有一种半导体发光器件包括堆叠在半导体衬底上的缺陷分解层，缺陷阻挡层，第一覆层，有源层，第二覆层。缺陷分解层和缺陷阻挡层包括超晶格结构。

89. 发明授权

US5665977A Semiconductor light emitting device with defect decomposing and blocking layers 失效
标题翻译：具有缺陷分解和阻挡层的半导体发光器件
公开(公告)号：US5665977A
公开(公告)日：1997-09-09
申请号：US691536
申请日：1996-08-02
申请人： Akira Ishibashi , Satoshi Matsumoto , Masaharu Nagai , Satoshi Ito , Shigetaka Tomiya , Kazushi Nakano , Etsuo Morita
发明人： Akira Ishibashi , Satoshi Matsumoto , Masaharu Nagai , Satoshi Ito , Shigetaka Tomiya , Kazushi Nakano , Etsuo Morita
IPC分类号： H01L33/06 , H01L33/28 , H01S5/30 , H01S5/32 , H01S5/347 , H01L33/00
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/06 , H01S5/347 , H01S2304/02 , H01S5/3059 , H01S5/3216
摘要： A semiconductor light emitting device comprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still another semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.
摘要翻译：半导体发光器件包括堆叠在半导体衬底上的第一覆层，有源层和第二覆层。第一包层和第二包层的至少一部分具有包含II-VI化合物半导体的超晶格结构。另一半导体发光器件包括堆叠在半导体衬底上的第一覆层，第一引导层，有源层，第二引导层和第二覆层。第一包覆层，第一引导层，第二覆盖层和第二引导层的至少一部分具有超晶格结构。另一半导体发光器件包括堆叠在半导体衬底上的缺陷分解层，缺陷阻挡层，第一覆层，有源层，第二覆层。缺陷分解层和缺陷阻挡层包括超晶格结构。

90. 发明授权

US5471067A Semiconductor metal contacting structure and a light emitting device 失效
标题翻译：半导体金属接触结构和发光器件
公开(公告)号：US5471067A
公开(公告)日：1995-11-28
申请号：US78037
申请日：1993-06-18
申请人： Masao Ikeda , Satoshi Ito , Yoshino Iochi , Takao Miyajima , Masafumi Ozawa , Katsuhiro Akimoto , Akira Ishibash , Futoshi Hiei
发明人： Masao Ikeda , Satoshi Ito , Yoshino Iochi , Takao Miyajima , Masafumi Ozawa , Katsuhiro Akimoto , Akira Ishibash , Futoshi Hiei
IPC分类号： H01L29/15 , H01L21/44 , H01L33/06 , H01L33/28 , H01L33/40 , H01S5/042 , H01S5/30 , H01S5/327 , H01S5/347 , H01L27/14 , H01L31/00
CPC分类号： H01L33/40 , B82Y20/00 , H01L33/06 , H01S5/0421 , H01L33/28 , H01S5/3068 , H01S5/327 , H01S5/347
摘要： A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer, an active layer, a p-type ZnMgSSe cladding layer, a p-type ZnSe contact layer and a p-type ZnTe contact layer which are stacked in this sequence on an n-type GaAs substrate. A p-side electrode is provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. A multiquantum well layer comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer along the junction interface between the p-type ZnSe contact layer and the p-type ZnTe contact layer. Holes injected from the p-side electrode pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer.
摘要翻译：公开了能够发出蓝光或绿光的半导体激光器。半导体激光器包括以n型ZnMgSSe覆层，有源层，p型ZnMgSSe覆层，p型ZnSe接触层和p型ZnTe接触层，该n型ZnMgSSe覆层以n型 GaAs衬底。在p型ZnTe接触层上设置p侧电极。在n型GaAs衬底的背面设有n侧电极。在p型ZnSe接触层和p型ZnSe接触层之间的接合界面处，在p型ZnSe接触层中产生的耗尽层中提供包含由p型ZnTe构成的量子阱和由p型ZnSe制成的阻挡层的多量子阱层。 p型ZnTe接触层。从p侧电极注入的孔通过在多量子阱层的量子阱中形成的量子级的谐振隧穿效应而通过结。

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