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    • 84. 发明授权
    • Semiconductor laser device and method for producing the same
    • 半导体激光装置及其制造方法
    • US07016385B2
    • 2006-03-21
    • US10650047
    • 2003-08-28
    • Masanori Watanabe
    • Masanori Watanabe
    • H01S5/00
    • B82Y20/00H01S5/028H01S5/162H01S5/168H01S5/2081H01S5/2231H01S5/34326
    • A semiconductor laser device has a current injection region (A) and current non-injection regions (B) located closer to respective laser beam-emitting end faces than the current injection region is. The semiconductor laser device has an oxide layer (106A) formed at a surface of a p-type (AlpHa1-p)qIn1-qP (0≦p≦x, 0≦q≦1) intermediate band gap layer (106) in each of the current non-injection regions (B), a p-type GaAs cap layer (107) formed on the intermediate band gap layer (106) in the current injection region (A), and a p-type GaAs contact layer (125) formed on the oxide layer (106A) and the p-type GaAs cap layer (107).
    • 半导体激光器件具有电流注入区域(A)和位于比当前注入区域更靠近相应的激光束发射端面的电流非注入区域(B)。 半导体激光器件具有形成在p型(Al 1 H 1-p N)q L表面的氧化物层(106A) 在每个电流非注入区域(B)中的中间带隙层(106)中,在中间带隙层(106)中,在中间带隙层(106)中,在一个1-q个P(0 <= p <= x,0 <= q < 形成在电流注入区域(A)中的中间带隙层(106)上的p型GaAs覆盖层(107)和形成在氧化物层(106A)上的p型GaAs接触层(125)和 p型GaAs覆盖层(107)。
    • 88. 发明授权
    • Semiconductor laser and fabricating method therefor
    • 半导体激光器及其制造方法
    • US06670202B2
    • 2003-12-30
    • US10234326
    • 2002-09-05
    • Masanori Watanabe
    • Masanori Watanabe
    • H01L2100
    • H01S5/162H01S5/22
    • At least a lower cladding layer, an active layer for generating laser light, a first upper cladding layer, an etching stopper layer and a second upper cladding layer are stacked on a substrate. An impurity for restraining laser light absorption is diffused into the second upper cladding layer along a region where a light-emitting end surface is to be formed, under a condition that allows the etching stopper layer to maintain a function of stopping etching for the second upper cladding layer (First annealing process). Etching is performed until the etching stopper layer is reached such that the second upper cladding layer is left in a ridge shape. The impurity in the second upper cladding layer is re-diffused into the active layer to thereby cause local intermixing of the active layer in a portion extending along the light-emitting end surface and located just under the ridge (Second annealing process).
    • 至少下包层,用于产生激光的有源层,第一上覆层,蚀刻阻挡层和第二上包覆层堆叠在基板上。 用于抑制激光吸收的杂质沿着要形成发光端面的区域在允许蚀刻停止层保持停止第二上部蚀刻功能的条件下扩散到第二上部包层中 包层(第一退火工艺)。 进行蚀刻直到达到蚀刻阻挡层,使得第二上部包层保持为脊状。 第二上包覆层中的杂质被再扩散到有源层中,从而引起有源层在沿着发光端面延伸并位于脊下方的部分(第二退火工艺)中的局部混合。