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81. 发明授权

US6121149A Optimized trench/via profile for damascene filling 有权
标题翻译：用于镶嵌填料的优化沟槽/通孔型材
公开(公告)号：US6121149A
公开(公告)日：2000-09-19
申请号：US296554
申请日：1999-04-22
申请人： Todd P. Lukanc , Fei Wang , Steven C. Avanzino
发明人： Todd P. Lukanc , Fei Wang , Steven C. Avanzino
IPC分类号： H01L21/288 , H01L21/768 , H01L21/00
CPC分类号： H01L21/76804 , H01L21/2885 , H01L21/76877
摘要： The reliability of in-laid metallization patterns, e.g., of copper or a copper-based alloy is significantly enhanced by voidlessly filling recesses formed in the dielectric layer surface by an electroplating process. Embodiments of the present invention include preventing "pinching-off" of the recess opening due to formation of overhanging nucleation/seed layer deposits at the corners of the opening as a result of locally increased rates of deposition. Embodiments of the present invention also include providing a dual-layered dielectric layer comprising dielectric materials having different lateral etching rates when subjected to a preselected etching process, for selectively tapering the width of the recess mouth opening to provide a wider opening at the substrate surface, which tapered width profile effectively prevents formation of overhanging deposits, which overhanging deposits can result in occlusion and void formation during electroplating to fill the recesses.
摘要翻译：通过电镀工艺无孔地填充在电介质层表面中形成的凹槽，显着地增强了铜或铜基合金的内置金属化图案的可靠性。本发明的实施例包括由于局部增加的沉积速率，在开口的角部由于形成悬垂的成核/晶种层沉积而阻止凹口的“夹断”。本发明的实施例还包括提供一种双层电介质层，其包括当进行预选蚀刻工艺时具有不同横向蚀刻速率的电介质材料，用于选择性地使凹口开口的宽度变窄以在基底表面提供更宽的开口，这种锥形宽度轮廓有效地防止了悬垂沉积物的形成，这种悬垂沉积物可以在电镀期间导致堵塞和空隙形成以填充凹部。

82. 发明授权

US6117781A Optimized trench/via profile for damascene processing 有权
标题翻译：优化的沟槽/通孔轮廓用于镶嵌加工
公开(公告)号：US6117781A
公开(公告)日：2000-09-12
申请号：US296553
申请日：1999-04-22
申请人： Todd P. Lukanc , Fei Wang , Steven C. Avanzino
发明人： Todd P. Lukanc , Fei Wang , Steven C. Avanzino
IPC分类号： H01L21/768 , H01L23/522 , H01L21/00
CPC分类号： H01L21/76804 , H01L23/5226 , H01L2924/0002
摘要： The reliability of in-laid metallization patterns, e.g., of copper or copper alloy, is significantly enhanced by voidlessly filling recesses in a substrate by an electroplating process, wherein "pinching-off" of the recess opening due to earlier formation of overhanging nucleation/seed layer deposits at the corners of the opening as a result of increased rates of deposition thereat is prevented. Embodiments include selectively tapering the width of the recess mouth opening to provide a wider opening at the substrate surface by means of a directed beam etching or ablation process while rotating the substrate, which tapered width profile effectively prevents formation of overhanging deposits thereat which can result in occlusion and void formation during filling of the recesses by electroplating.
摘要翻译：通过电镀工艺无孔地填充衬底中的凹槽，显着地增强了诸如铜或铜合金的嵌入式金属化图案的可靠性，其中由于较早形成悬垂成核/ 作为沉积速率增加的结果，防止种子层沉积在开口的角部。实施例包括选择性地使凹口开口的宽度变窄，以在旋转衬底的同时借助于定向光束蚀刻或消融工艺在衬底表面提供更宽的开口，该锥形宽度分布有效地防止在其上形成悬垂沉积物，这可导致通过电镀填充凹陷期间的闭塞和空隙形成。

83. 发明授权

US6074949A Method of preventing copper dendrite formation and growth 有权
标题翻译：防止铜枝晶形成和生长的方法
公开(公告)号：US6074949A
公开(公告)日：2000-06-13
申请号：US199348
申请日：1998-11-25
申请人： Diana M. Schonauer , Steven C. Avanzino , Kai Yang
发明人： Diana M. Schonauer , Steven C. Avanzino , Kai Yang
IPC分类号： H01L21/311 , H01L21/00
CPC分类号： H01L21/31111
摘要： The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP. Embodiments include removing up to 20 .ANG. of silicon oxide by buffing with a solution containing ammonium fluoride, diammonium hydrogen citrate, triammonium citrate, a surfactant and de-ionized water.
摘要翻译：通过从介电场和CMP之后的线之间化学去除一部分表面，可以防止或大大减少从Cu或Cu合金线发射到边界开放电介质场中的枝晶的形成和/或生长。实施方案包括通过用含有氟化铵，柠檬酸氢铵，柠檬酸三铵，表面活性剂和去离子水的溶液进行抛光来除去多达20个氧化硅的ANGSTROM。

84. 发明授权

US5662769A Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning 失效
标题翻译：用于在CMP之后从晶片去除金属化合物污染物的化学溶液和晶片清洗方法
公开(公告)号：US5662769A
公开(公告)日：1997-09-02
申请号：US391812
申请日：1995-02-21
申请人： Diana M. Schonauer , Steven C. Avanzino
发明人： Diana M. Schonauer , Steven C. Avanzino
IPC分类号： C11D7/08 , C11D7/26 , C11D7/32 , C11D11/00 , H01L21/02 , H01L21/306 , H01L21/321 , H01L21/00 , C09K13/00
CPC分类号： H01L21/3212 , C11D11/0047 , C11D7/08 , C11D7/265 , C11D7/3245 , H01L21/02074 , Y10S438/906
摘要： A process and solution for cleaning Fe contaminants bound to a metallized semiconductor surface after CMP planarization. The solution comprises a PH buffered solution including hydrofluoric acid and a ligand selected from a group consisting of citrates and EDTA.
摘要翻译： CMP平坦化后清理结合金属化半导体表面的Fe污染物的工艺和解决方案。该溶液包括PH缓冲溶液，其包括氢氟酸和选自柠檬酸盐和EDTA的配体。

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