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81. 发明授权

US08482008B2 Method of manufacturing thin film transistor, thin film transistor, and display unit 失效
标题翻译：制造薄膜晶体管，薄膜晶体管和显示单元的方法
公开(公告)号：US08482008B2
公开(公告)日：2013-07-09
申请号：US13444003
申请日：2012-04-11
申请人： Toshiaki Arai , Yoshio Inagaki
发明人： Toshiaki Arai , Yoshio Inagaki
IPC分类号： H01L29/04 , H01L31/20
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02667 , H01L21/02675 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L29/78678
摘要： A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.
摘要翻译：一种具有晶体硅膜的薄膜晶体管，其在绝缘基板上形成有栅电极和栅极绝缘膜，并且在对应于栅电极的区域中具有沟道区域; 绝缘通道保护膜，其选择性地形成在与晶体硅膜上的沟道区对应的区域中; 具有源极区域和漏极区域的n +硅膜，其夹着与沟道保护膜上的沟道区域对应的区域和晶体硅膜; 以及具有分别对应于源极区域和漏极区域的源极电极和漏极电极的金属膜。

82. 发明申请

US20100239962A1 TWO-PHOTON ABSORBING OPTICAL RECORDING MATERIAL AND TWO-PHOTON ABSORBING OPTICAL RECORDING AND REPRODUCING METHOD 审中-公开
标题翻译：双光子吸收光学记录材料和双光子吸收光学记录和再现方法
公开(公告)号：US20100239962A1
公开(公告)日：2010-09-23
申请号：US12791582
申请日：2010-06-01
申请人： Masaharu AKIBA , Takeharu Tani , Hiroo Takizawa , Yoshio Inagaki
发明人： Masaharu AKIBA , Takeharu Tani , Hiroo Takizawa , Yoshio Inagaki
IPC分类号： G03H1/00
CPC分类号： G11B7/246 , B82Y10/00 , G11B7/245 , G11B7/2463 , G11B7/2472 , G11B7/2475 , G11B7/2478 , G11B7/248 , G11B7/2492 , G11B7/2495 , G11B7/2531 , G11B7/2533 , G11B7/2534 , G11B7/2535 , G11B2007/24612
摘要： A two-photon absorbing optical recording material comprising at least one two-photon absorbing compound and a recording component is provided. Recording is made on it by utilizing the two-photon absorption of the two-photon absorbing compound in the material, and then the material is irradiated with light to thereby detect the difference in the reflectance between the recorded area and the unrecorded area thereof, and the recorded information is thereby reproduced from the material, and also provided are a photosensitive polymer composition and a photon-mode recording method for the material.
摘要翻译：提供了包含至少一个双光子吸收化合物和记录组分的双光子吸收光学记录材料。通过利用材料中的双光子吸收化合物的双光子吸收进行记录，然后用光照射材料，从而检测记录区域与未记录区域之间的反射率差异，所记录的信息因此从材料中再现，并且还提供了用于该材料的光敏聚合物组合物和光子模式记录方法。

83. 发明申请

US20100197050A1 METHOD OF FORMING SEMICONDUCTOR THIN FILM AND INSPECTION DEVICE OF SEMICONDUCTOR THIN FILM 审中-公开
标题翻译：形成半导体薄膜的方法和半导体薄膜检测装置
公开(公告)号：US20100197050A1
公开(公告)日：2010-08-05
申请号：US12695347
申请日：2010-01-28
申请人： Nobuhiko Umezu , Yoshio Inagaki
发明人： Nobuhiko Umezu , Yoshio Inagaki
IPC分类号： H01L21/66 , H01L21/268 , H01L21/428 , G06F19/00
CPC分类号： G01N21/45 , G01N21/8422 , G01N21/9501 , H01L21/02532 , H01L21/02675 , H01L22/12
摘要： A method of forming a semiconductor thin film includes the steps of: forming an amorphous semiconductor thin film on a substrate; partially forming a crystalline semiconductor thin film for each element region by irradiating laser light to the amorphous semiconductor thin film to selectively perform a heating treatment on the amorphous semiconductor thin film, and crystallizing an amorphous semiconductor thin film corresponding to an irradiation region; and inspecting crystallinity of the crystalline semiconductor thin film. The inspection step includes the steps of obtaining an optical step based on an optical phase difference between a crystallized region and an uncrystallized region by irradiating light to the crystalline semiconductor thin film and the amorphous semiconductor thin film, and evaluating one or both of sorting of the crystalline semiconductor thin film and control of crystallinity of the crystalline semiconductor thin film, based on the obtained optical step.
摘要翻译：一种形成半导体薄膜的方法包括以下步骤：在衬底上形成非晶半导体薄膜; 通过向非晶半导体薄膜照射激光来选择性地对非晶半导体薄膜进行加热处理，并使与照射区域相对应的非晶半导体薄膜结晶，从而对每个元件区域部分地形成晶体半导体薄膜; 并检查结晶半导体薄膜的结晶度。检查步骤包括以下步骤：通过将光照射到结晶半导体薄膜和非晶半导体薄膜上，基于结晶区域和未结晶区域之间的光学相位差获得光学步骤，并评估其中的一个或两个基于获得的光学步骤，结晶半导体薄膜和结晶半导体薄膜的结晶度的控制。

84. 发明授权

US07700251B2 Electrophotographic photoconductor and image-forming apparatus 有权
标题翻译：电子照相光电导体和图像形成装置
公开(公告)号：US07700251B2
公开(公告)日：2010-04-20
申请号：US11582588
申请日：2006-10-18
申请人： Norio Nakai , Kazunari Hamasaki , Daisuke Kuboshima , Yoshio Inagaki , Hideki Okada , Tetsuya Ichiguchi , Keiji Maruo
发明人： Norio Nakai , Kazunari Hamasaki , Daisuke Kuboshima , Yoshio Inagaki , Hideki Okada , Tetsuya Ichiguchi , Keiji Maruo
IPC分类号： G03G5/06
CPC分类号： G03G5/047 , G03G5/0517 , G03G5/0605 , G03G5/0609 , G03G5/0612 , G03G5/0618 , G03G5/062
摘要： An electrophotographic photoconductor having an excellent crack resistance and wear resistance as well as excellent sensitivity characteristics, while keeping good image characteristics of the photoconductor is provided. In addition, an image-forming apparatus equipped with such an electrophotographic photoconductor is also provided. The electrophotographic photoconductor includes a photosensitive layer containing at least a charge-generating agent, a hole-transfer agent, and a binder resin on a conductive substrate. The hole-transfer agent has a solubility of 5 to 35% by weight with respect to triglyceride oleate and the photosensitive layer contains a compound represented by the following general formula (1) as an additive:
摘要翻译：提供具有优异的耐龟裂性和耐磨性以及优异的灵敏度特性的电子照相感光体，同时保持感光体的良好图像特性。此外，还提供了配备有这种电子照相感光体的图像形成装置。电子照相感光体包括在导电性基材上至少含有电荷发生剂，空穴转移剂和粘合剂树脂的感光层。空穴转移剂相对于甘油三酯油酸盐的溶解度为5〜35重量％，感光层含有下述通式（1）表示的化合物作为添加剂：

85. 发明申请

US20100038646A1 METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT 失效
标题翻译：制造薄膜晶体管，薄膜晶体管和显示单元的方法
公开(公告)号：US20100038646A1
公开(公告)日：2010-02-18
申请号：US12603049
申请日：2009-10-21
申请人： Toshiaki Arai , Yoshio Inagaki
发明人： Toshiaki Arai , Yoshio Inagaki
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02667 , H01L21/02675 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L29/78678
摘要： A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.
摘要翻译：一种具有晶体硅膜的薄膜晶体管，其在绝缘基板上形成有栅电极和栅极绝缘膜，并且在对应于栅电极的区域中具有沟道区域; 绝缘通道保护膜，其选择性地形成在与晶体硅膜上的沟道区对应的区域中; 具有源极区域和漏极区域的n +硅膜，其夹着与沟道保护膜上的沟道区域对应的区域和晶体硅膜; 以及具有分别对应于源极区域和漏极区域的源极电极和漏极电极的金属膜。

86. 发明授权

US07629208B2 Method of manufacturing thin film transistor, thin film transistor, and display unit 失效
标题翻译：制造薄膜晶体管，薄膜晶体管和显示单元的方法
公开(公告)号：US07629208B2
公开(公告)日：2009-12-08
申请号：US11744299
申请日：2007-05-04
申请人： Toshiaki Arai , Yoshio Inagaki
发明人： Toshiaki Arai , Yoshio Inagaki
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02667 , H01L21/02675 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L29/78678
摘要： A method of manufacturing a thin film transistor capable of inhibiting the characteristics variation of the thin film transistor without deteriorating the characteristics thereof is provided. A crystalline silicon film is formed by indirect heat treatment through a photothermal conversion layer and a buffer layer. By patterning the buffer layer and an insulating film, a channel protective film is selectively formed in a region corresponding to a channel region on the crystalline silicon film. Further, when an n+ silicon film and a metal layer are selectively removed, the channel protective film functions as an etching stopper. When the crystalline silicon film is formed, heat is uniformly supplied. Further, in etching, the channel region of the crystalline silicon film is protected.
摘要翻译：提供一种能够抑制薄膜晶体管的特性变化而不劣化其特性的薄膜晶体管的制造方法。通过光热转换层和缓冲层的间接热处理形成晶体硅膜。通过图案化缓冲层和绝缘膜，在对应于晶体硅膜上的沟道区域的区域中选择性地形成沟道保护膜。此外，当选择性地去除n +硅膜和金属层时，沟道保护膜用作蚀刻停止层。当形成结晶硅膜时，均匀地供应热量。此外，在蚀刻中，晶体硅膜的沟道区被保护。

87. 发明申请

US20090087721A1 SURFACE-MODIFIED CARBON MATERIAL AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：表面改性碳材料及其制造方法
公开(公告)号：US20090087721A1
公开(公告)日：2009-04-02
申请号：US12235245
申请日：2008-09-22
申请人： Kenta YOSHIDA , Hirotaka Kitagawa , Yoshio Inagaki
发明人： Kenta YOSHIDA , Hirotaka Kitagawa , Yoshio Inagaki
IPC分类号： H01M8/02 , H01M4/90 , C07F7/08 , B01J31/02
CPC分类号： H01M4/9083 , H01M4/926 , H01M2008/1095
摘要： Disclosed is a surface-modified carbon material obtained by subjecting a carbon material to react with a benzyne. The surface-modified carbon material has high heat stability.
摘要翻译：公开了通过使碳材料与苯并芘反应获得的表面改性碳材料。表面改性碳材料具有高的热稳定性。

88. 发明申请

US20070111118A1 Electrophotographic photoconductor and image-forming apparatus 有权
标题翻译：电子照相光电导体和图像形成装置
公开(公告)号：US20070111118A1
公开(公告)日：2007-05-17
申请号：US11582588
申请日：2006-10-18
申请人： Norio Nakai , Kazunari Hamasaki , Daisuke Kuboshima , Yoshio Inagaki , Hideki Okada , Tetsuya Ichiguchi , Keiji Maruo
发明人： Norio Nakai , Kazunari Hamasaki , Daisuke Kuboshima , Yoshio Inagaki , Hideki Okada , Tetsuya Ichiguchi , Keiji Maruo
IPC分类号： G03G5/06
CPC分类号： G03G5/047 , G03G5/0517 , G03G5/0605 , G03G5/0609 , G03G5/0612 , G03G5/0618 , G03G5/062
摘要： An electrophotographic photoconductor having an excellent crack resistance and wear resistance as well as excellent sensitivity characteristics, while keeping good image characteristics of the photoconductor is provided. In addition, an image-forming apparatus equipped with such an electrophotographic photoconductor is also provided. The electrophotographic photoconductor includes a photosensitive layer containing at least a charge-generating agent, a hole-transfer agent, and a binder resin on a conductive substrate. The hole-transfer agent has a solubility of 5 to 35% by weight with respect to triglyceride oleate and the photosensitive layer contains a compound represented by the following general formula (1) as an additive:
摘要翻译：提供具有优异的耐龟裂性和耐磨性以及优异的灵敏度特性的电子照相感光体，同时保持感光体的良好图像特性。此外，还提供了配备有这种电子照相感光体的图像形成装置。电子照相感光体包括在导电性基材上至少含有电荷发生剂，空穴转移剂和粘合剂树脂的感光层。空穴转移剂相对于甘油三酯油酸盐的溶解度为5〜35重量％，感光层含有下述通式（1）表示的化合物作为添加剂：

89. 发明申请

US20070077507A1 Electrophotographic photoconductor and manufacturing method of electrophotographic photoconductor 审中-公开
标题翻译：电子照相感光体和电子照相感光体的制造方法
公开(公告)号：US20070077507A1
公开(公告)日：2007-04-05
申请号：US11523370
申请日：2006-09-19
申请人： Junichiro Otsubo , Jun Azuma , Keiji Maruo , Yoshio Inagaki , Norio Nakai , Kazunari Hamasaki , Shiho Okawa
发明人： Junichiro Otsubo , Jun Azuma , Keiji Maruo , Yoshio Inagaki , Norio Nakai , Kazunari Hamasaki , Shiho Okawa
IPC分类号： G03G5/14
CPC分类号： G03G5/047 , G03G5/142 , G03G5/144
摘要： The present invention provides an electrophotographic photoconductor which can reduce the generation of fogging under a high-temperature and high-moisture condition and can be easily manufactured, and a method of manufacturing such an electrophotographic photoconductor. In an electrophotographic photoconductor which includes a support base body, an intermediate layer and a photoconductor layer and a manufacturing method of such an electrophotographic photoconductor, the intermediate layer contains titanium oxide and a binding resin and a ΔL value of the intermediate layer satisfies a following relationship formula (1) or a ΔA value of the intermediate layer satisfies a following relationship formula (2), that is, −5.0≦ΔL≦0 (1) and ΔA≦0.055 (2), wherein the ΔL value is a value which is obtained by subtracting an L value (a parameter value which is measured by a color-difference meter in accordance with JIS Z 8722) which is measured with respect to a single support base body from the L value which is measured in a state that the intermediate layer is formed on the support base body, and the ΔA value is a value which is obtained by subtracting reflection absorbance (a parameter value which is measured by a color-difference meter) which is measured with respect to a single support base body from the reflection absorbance which is measured in a state that the intermediate layer is formed on the support base body.
摘要翻译：本发明提供一种电子照相感光体，其可以在高温高湿条件下降低发烟，并且可以容易地制造，以及制造这种电照相感光体的方法。在包括支撑基体，中间层和感光体层的电子照相感光体中，以及这种电子照相感光体的制造方法，中间层含有氧化钛和粘合树脂，中间层的ΔL值满足以下关系式（1）或中间层的ΔA值满足关系式（2），即-5.0 <=ΔL<= 0（1）和ΔA<= 0.055（2），其中ΔL值为通过从在一个状态下测量的L值中减去相对于单个支撑基体测量的L值（由根据JIS Z 8722测量的色差计的参数值）获得的值中间层形成在支撑基体上，DeltaA值是通过减去反射吸光度（通过色差计测量的参数值）而获得的值 r），其从在支撑基体上形成中间层的状态下测量的反射吸光度相对于单个支撑体基体测量。

90. 发明申请

US20060286338A1 Optical information-recording medium, novel oxonol compound and method of recording information 审中-公开
标题翻译：光学信息记录介质，新型氧化合物和记录信息的方法
公开(公告)号：US20060286338A1
公开(公告)日：2006-12-21
申请号：US11513513
申请日：2006-08-31
申请人： Masaharu Akiba , Shin-ichi Morishima , Yoshio Inagaki , Hisashi Mikoshiba , Michihiro Shibata
发明人： Masaharu Akiba , Shin-ichi Morishima , Yoshio Inagaki , Hisashi Mikoshiba , Michihiro Shibata
IPC分类号： B32B3/02
CPC分类号： C09B23/083 , C09B23/00 , C09B23/0075 , C09B69/04 , G11B7/00456 , G11B7/24038 , G11B7/244 , G11B7/245 , G11B7/246 , G11B7/2467 , G11B7/247 , G11B7/2472 , G11B7/2475 , G11B7/2478 , G11B7/248 , G11B7/249 , G11B7/2534 , G11B7/2542 , G11B7/2578 , G11B7/259 , G11B2007/24612 , Y10S430/146
摘要： An optical information-recording medium which contains a dye having at least two chromophores bonded to each other without any conjugated bond intervening between those chromophores.
摘要翻译：一种含有具有至少两个生色团的染料的光学信息记录介质，其中没有任何共轭键介于那些发色团之间。

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