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81. 发明授权

US06998611B2 Electron beam apparatus and device manufacturing method using same 失效
公开(公告)号：US06998611B2
公开(公告)日：2006-02-14
申请号：US10234152
申请日：2002-09-05
申请人： Mamoru Nakasuji , Takao Kato , Kenji Watanabe , Shoji Yoshikawa , Tohru Satake , Nobuharu Noji
发明人： Mamoru Nakasuji , Takao Kato , Kenji Watanabe , Shoji Yoshikawa , Tohru Satake , Nobuharu Noji
IPC分类号： G01N23/00 , H01L21/66 , H01G23/00
CPC分类号： B82Y10/00 , G01N23/225 , G01R31/307 , H01J37/242 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24507 , H01J2237/2817
摘要： An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an ExB separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample. When the sample is evaluated, a direction in which the stage is moved is corrected to align with the direction in which the dies are arranged.

82. 发明授权

US07479634B2 Electron beam apparatus and device manufacturing method using the same 有权
标题翻译：电子束装置及其制造方法
公开(公告)号：US07479634B2
公开(公告)日：2009-01-20
申请号：US11714130
申请日：2007-03-06
申请人： Mamoru Nakasuji , Takao Kato , Kenji Watanabe , Shoji Yoshikawa , Tohru Satake , Nobuharu Noji
发明人： Mamoru Nakasuji , Takao Kato , Kenji Watanabe , Shoji Yoshikawa , Tohru Satake , Nobuharu Noji
IPC分类号： G21K7/00 , G21G4/00 , G01N23/00
CPC分类号： B82Y10/00 , G01N23/225 , G01R31/307 , H01J37/242 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24507 , H01J2237/2817
摘要： An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an E×B separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample. When the sample is evaluated, a direction in which the stage is moved is corrected to align with the direction in which the dies are arranged.
摘要翻译：提供电子束装置，用于以简单的结构以高通量可靠地测量电位对比度等。用于照射形成有电子束图案的晶片的样品（如晶片）以评估样品的电子束装置包括用于容纳电子束源的电子 - 光学柱，物镜，ExB分离器和次级电子束检测器用于保持样品的阶段，并相对于电子 - 光学柱相对移动样品; 用于容纳舞台并能够在真空气氛中控制其内部的工作室; 用于将样品供应到载物台的装载机; 电压施加机构，用于向样品施加电压，并且能够向物镜的下电极施加至少两个电压; 以及用于测量模具布置在样品上的方向的对准机构。当评估样品时，对载物台移动的方向进行校正，使其与模具的排列方向一致。

83. 发明授权

US07521692B2 TDI detecting device, a feed-through equipment, an electron beam apparatus using these device and equipment, and a semiconductor device manufacturing method using the same electron beam apparatus 有权
标题翻译： TDI检测装置，馈通装置，使用这些装置和设备的电子束装置，以及使用该电子束装置的半导体装置的制造方法
公开(公告)号：US07521692B2
公开(公告)日：2009-04-21
申请号：US11896519
申请日：2007-09-04
申请人： Masahiro Hatakeyama , Tohru Satake , Takeshi Murakami , Kenji Watanabe , Nobuharu Noji
发明人： Masahiro Hatakeyama , Tohru Satake , Takeshi Murakami , Kenji Watanabe , Nobuharu Noji
IPC分类号： G01K1/08 , H01J3/14 , H01J3/26
CPC分类号： H01J37/222 , G01N21/956 , H01J37/224 , H01J37/244 , H01J2237/2445 , H01J2237/2447 , H01R13/2421 , H04N5/2253 , Y10S439/935
摘要： An electron beam apparatus comprises a TDI sensor 64 and a feed-through device 50. The feed-through device has a socket contact 54 for interconnecting a pin 52 attached to a flanged 51 for separating different environments and the other pin 53 making a pair with the pin 52, in which the pin 52, the other pin 53 and the socket contact 54 together construct a connecting block, and the socket contact 54 has an elastic member 61. Accordingly, even if a large number of connecting blocks are provided, the connecting force may be kept to such a low level as to prevent the breakage in the sensor. The pin 53 is connected with the TDI sensor 64, in which a pixel array has been adaptively configured based on the optical characteristic of an image projecting optical system. That sensor has a number of integration stages that can reduce the field of view of the image projecting optical system to as small as possible so that a maximal acceptable distortion within the field of view may be set larger. Further, the number of integration stage may be determined such that the data rate of the TDI sensor would not be reduced but the number of pins would not be increased as much as possible. Preferably, the number of line count may be almost equal to the number of integration stages.
摘要翻译：电子束装置包括TDI传感器64和馈通装置50.馈通装置具有插座触点54，用于互连连接到凸缘51的引脚52，用于分离不同的环境，而另一个引脚53与销52，销52，另一销53和插座接触54一起构成连接块，插座触头54具有弹性构件61.因此，即使设置了大量的连接块，连接力可以保持在如此低的水平，以防止传感器中的破损。引脚53与TDI传感器64连接，其中像素阵列已经基于图像投影光学系统的光学特性被自适应地配置。该传感器具有可以将图像投影光学系统的视野尽可能地减小的多个积分级，使得视野内的最大可接受失真可以被设定得更大。此外，可以确定积分级的数量，使得TDI传感器的数据速率不会降低，但是引脚的数量不会尽可能多地增加。优选地，行计数的数量可以几乎等于积分级数。

84. 发明申请

US20060237646A1 Mapping-projection-type electron beam apparatus for inspecting sample by using electrons reflected from the sample 有权
公开(公告)号：US20060237646A1
公开(公告)日：2006-10-26
申请号：US10543151
申请日：2004-01-27
申请人： Kenji Watanabe , Takeshi Murakami , Masahiro Hatakeyama , Yoshinao Hirabayashi , Tohru Satake , Nobuharu Noji , Yuichiro Yamazaki , Ichirota Nagahama
发明人： Kenji Watanabe , Takeshi Murakami , Masahiro Hatakeyama , Yoshinao Hirabayashi , Tohru Satake , Nobuharu Noji , Yuichiro Yamazaki , Ichirota Nagahama
IPC分类号： G21K7/00
CPC分类号： H01J37/32211 , G01N23/225 , H01J37/32357 , H01J2237/2441 , H01J2237/2446
摘要： An apparatus capable of detecting defects of a pattern on a sample with high accuracy and reliability and at a high throughput, and a semiconductor manufacturing method using the same are provided. The electron beam apparatus is a mapping-projection-type electron beam apparatus for observing or evaluating a surface of the sample by irradiating the sample with a primary electron beam and forming on a detector an image of reflected electrons emitted from the sample. An electron impact-type detector such as an electron impact-type CCD or an electron impact-type TDI is used as the detector for detecting the reflected electrons. The reflected electrons are selectively detected from an energy difference between the reflected electrons and secondary electrons emitted from the sample. To eliminate charge-up caused on the sample surface by irradiation with the primary electron beam, the surface of the sample is covered with a cover placed above the sample and a gas is supplied to the space above the sample covered with the cover. The gas is brought into contact with the sample surface to reduce charge-up on the sample surface.

85. 发明授权

US08674317B2 Sample surface inspection apparatus and method 有权
标题翻译：样品表面检查装置及方法
公开(公告)号：US08674317B2
公开(公告)日：2014-03-18
申请号：US13289486
申请日：2011-11-04
申请人： Masahiro Hatakeyama , Kenji Watanabe , Takeshi Murakami , Tohru Satake , Nobuharu Noji
发明人： Masahiro Hatakeyama , Kenji Watanabe , Takeshi Murakami , Tohru Satake , Nobuharu Noji
IPC分类号： G21K7/00
CPC分类号： G03F7/162 , G01N23/225 , H01J37/285 , H01J2237/204 , H01J2237/2812 , H01J2237/2814 , H01J2237/2855 , H01J2237/2857
摘要： The present invention provides a surface inspection method and apparatus for inspecting a surface of a sample, in which a resistive film is coated on the surface, and a beam is irradiated to the surface having the resistive film coated thereon, to thereby conduct inspection of the surface of the sample. In the surface inspection method of the present invention, a resistive film having an arbitrarily determined thickness t1 is first coated on a surface of a sample. Thereafter, a part of the resistive film having the arbitrarily determined thickness t1 is dissolved in a solvent, to thereby reduce the thickness of the resistive film to a desired level. This enables precise control of a value of resistance of the resistive film and suppresses distortion of an image to be detected.
摘要翻译：本发明提供了一种表面检查方法和装置，用于检查表面上涂覆有电阻膜的样品的表面，并且将光束照射到其上涂覆有电阻膜的表面，从而进行样品表面。在本发明的表面检查方法中，首先将具有任意确定的厚度t1的电阻膜涂覆在样品的表面上。此后，将具有任意确定的厚度t1的电阻膜的一部分溶解在溶剂中，从而将电阻膜的厚度减小到期望的水平。这能够精确地控制电阻膜的电阻值并抑制要检测的图像的失真。

86. 发明授权

US08076654B2 Sample surface inspection apparatus and method 有权
标题翻译：样品表面检查装置及方法
公开(公告)号：US08076654B2
公开(公告)日：2011-12-13
申请号：US12153397
申请日：2008-05-19
申请人： Masahiro Hatakeyama , Kenji Watanabe , Takeshi Murakami , Tohru Satake , Nobuharu Noji
发明人： Masahiro Hatakeyama , Kenji Watanabe , Takeshi Murakami , Tohru Satake , Nobuharu Noji
IPC分类号： G21K7/00
CPC分类号： G03F7/162 , G01N23/225 , H01J37/285 , H01J2237/204 , H01J2237/2812 , H01J2237/2814 , H01J2237/2855 , H01J2237/2857
摘要： The present invention provides a surface inspection method and apparatus for inspecting a surface of a sample, in which a resistive film is coated on the surface, and a beam is irradiated to the surface having the resistive film coated thereon, to thereby conduct inspection of the surface of the sample. In the surface inspection method of the present invention, a resistive film having an arbitrarily determined thickness t1 is first coated on a surface of a sample. Thereafter, a part of the resistive film having the arbitrarily determined thickness t1 is dissolved in a solvent, to thereby reduce the thickness of the resistive film to a desired level. This enables precise control of a value of resistance of the resistive film and suppresses distortion of an image to be detected.
摘要翻译：本发明提供了一种表面检查方法和装置，用于检查表面上涂覆有电阻膜的样品的表面，并且将光束照射到其上涂覆有电阻膜的表面，从而进行样品表面。在本发明的表面检查方法中，首先将具有任意确定的厚度t1的电阻膜涂覆在样品的表面上。此后，将具有任意确定的厚度t1的电阻膜的一部分溶解在溶剂中，从而将电阻膜的厚度减小到期望的水平。这能够精确地控制电阻膜的电阻值并抑制要检测的图像的失真。

87. 发明申请

US20070200569A1 Electron beam apparatus with detailed observation function and sample inspecting and observing method using electron beam apparatus 有权
公开(公告)号：US20070200569A1
公开(公告)日：2007-08-30
申请号：US11723591
申请日：2007-03-21
申请人： Kenji Watanabe , Tohru Satake , Nobuharu Noji , Takeshi Murakami , Tsutomu Karimata , Yuichiro Yamazaki , Ichirota Nagahama , Atsushi Onishi
发明人： Kenji Watanabe , Tohru Satake , Nobuharu Noji , Takeshi Murakami , Tsutomu Karimata , Yuichiro Yamazaki , Ichirota Nagahama , Atsushi Onishi
IPC分类号： G01R31/305
CPC分类号： G01R31/305
摘要： Provided is a sample observing method allowing for a detailed observation of a sample by using one and the same electron beam apparatus. The method uses an electron beam apparatus 1 comprising a primary optical system 10 serving for irradiating the electron beam onto the sample surface and a secondary optical system 30 serving for detecting secondary electrons emanating from said sample surface to form an image of the sample surface. The inspection is carried out on the sample surface, S, by irradiating the electron beam to the sample surface, and after the extraction of a defective region in the sample based on the inspection, the extracted defective region is once again applied with the irradiation of the electron beam so as to provide a magnification or a detailed observation of the defective region.

88. 发明申请

US20050199807A1 Electron beam apparatus with detailed observation function and sample inspecting and observing method using electron beam apparatus 有权
标题翻译：具有详细观察功能的电子束装置和使用电子束装置的样品检查和观察方法
公开(公告)号：US20050199807A1
公开(公告)日：2005-09-15
申请号：US11019111
申请日：2004-12-22
申请人： Kenji Watanabe , Tohru Satake , Nobuharu Noji , Takeshi Murakami , Tsutomu Karimata , Yuichiro Yamazaki , Ichirota Nagahama , Atsushi Onishi
发明人： Kenji Watanabe , Tohru Satake , Nobuharu Noji , Takeshi Murakami , Tsutomu Karimata , Yuichiro Yamazaki , Ichirota Nagahama , Atsushi Onishi
IPC分类号： G01N23/00 , G01R31/305 , G21K7/00
CPC分类号： G01R31/305
摘要： Provided is a sample observing method allowing for a detailed observation of a sample by using one and the same electron beam apparatus. The method uses an electron beam apparatus 1 comprising a primary optical system 10 serving for irradiating the electron beam onto the sample surface and a secondary optical system 30 serving for detecting secondary electrons emanating from said sample surface to form an image of the sample surface. The inspection is carried out on the sample surface, S, by irradiating the electron beam to the sample surface, and after the extraction of a defective region in the sample based on the inspection, the extracted defective region is once again applied with the irradiation of the electron beam so as to provide a magnification or a detailed observation of the defective region.
摘要翻译：提供了通过使用同一电子束装置对样品进行详细观察的样本观察方法。该方法使用电子束装置1，其包括用于将电子束照射到样品表面上的主要光学系统10和用于检测从所述样品表面发出的二次电子以形成样品表面的图像的二次光学系统30。通过向样品表面照射电子束，在样品表面S上进行检查，并且在基于检查提取样品中的缺陷区域之后，再次施加提取的缺陷区域电子束，以便提供缺陷区域的放大或详细观察。

89. 发明授权

US07285010B2 TDI detecting device, a feed-through equipment and electron beam apparatus using these devices 有权
标题翻译： TDI检测装置，使用这些装置的馈通装置和电子束装置
公开(公告)号：US07285010B2
公开(公告)日：2007-10-23
申请号：US10476795
申请日：2002-05-14
申请人： Masahiro Hatakeyama , Tohru Satake , Takeshi Murakami , Kenji Watanabe , Nobuharu Noji
发明人： Masahiro Hatakeyama , Tohru Satake , Takeshi Murakami , Kenji Watanabe , Nobuharu Noji
IPC分类号： H01R1/01
CPC分类号： H01J37/222 , G01N21/956 , H01J37/224 , H01J37/244 , H01J2237/2445 , H01J2237/2447 , H01R13/2421 , H04N5/2253 , Y10S439/935
摘要： An electron beam apparatus comprises a TDI sensor (64) and a feed-through device (50). The feed-through device has a socket contact (54) for interconnecting a pin (52) attached to a flanged (51) for separating different environments. The other pin (53) making a pair with the pin (52) and the socket contact (54) together construct a connecting block, and the socket contact (54) has an elastic member (61). The pin (53) is connected with the TDI sensor (64), in which a pixel array has been adaptively configured based on the optical characteristic of an image projecting optical system. That sensor has a number of integration stages that can reduce the field of view of the image projecting optical system. Further, the number of integration stage may be determined such that the data rate of the TDI sensor would not be reduced but the number of pins would not be increased as much as possible. Preferably, the number of line count may be almost equal to the number of integration stages.
摘要翻译：电子束装置包括TDI传感器（64）和馈通装置（50）。馈通装置具有用于互连连接到带法兰（51）的销（52）的插座触点（54），用于分离不同的环境。的。与销（52）和插座触头（54）成对的另一个销（53）一起构成连接块，并且插座触头（54）具有弹性构件（61）。引脚（53）与TDI传感器（64）连接，其中像素阵列已经基于图像投影光学系统的光学特性被自适应地配置。该传感器具有可以减少图像投影光学系统的视野的多个积分级。此外，可以确定积分级的数量，使得TDI传感器的数据速率不会降低，但是引脚的数量不会尽可能多地增加。优选地，行计数的数量可以几乎等于积分级数。

90. 发明授权

US07391036B2 Sample surface inspection apparatus and method 有权
公开(公告)号：US07391036B2
公开(公告)日：2008-06-24
申请号：US10511396
申请日：2003-04-17
申请人： Masahiro Hatakeyama , Kenji Watanabe , Takeshi Murakami , Tohru Satake , Nobuharu Noji
发明人： Masahiro Hatakeyama , Kenji Watanabe , Takeshi Murakami , Tohru Satake , Nobuharu Noji
IPC分类号： G01N13/10 , B05D1/36
CPC分类号： G03F7/162 , G01N23/225 , H01J37/285 , H01J2237/204 , H01J2237/2812 , H01J2237/2814 , H01J2237/2855 , H01J2237/2857
摘要： The present invention provides a surface inspection method and apparatus for inspecting a surface of a sample, in which a resistive film is coated on the surface, and a beam is irradiated to the surface having the resistive film coated thereon, to thereby conduct inspection of the surface of the sample. In the surface inspection method of the present invention, a resistive film having an arbitrarily determined thickness t1 is first coated on a surface of a sample. Thereafter, a part of the resistive film having the arbitrarily determined thickness t1 is dissolved in a solvent, to thereby reduce the thickness of the resistive film to a desired level. This enables precise control of a value of resistance of the resistive film and suppresses distortion of an image to be detected.

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