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81. 发明专利

JPH10337455A PRODUCTION OF HYDROGEN PERMEABLE MEMBRANE 失效
公开(公告)号：JPH10337455A
公开(公告)日：1998-12-22
申请号：JP14895297
申请日：1997-06-06
申请人： MITSUBISHI HEAVY IND LTD
发明人： KOBAYASHI TOSHIRO , YASUI TOYOAKI
IPC分类号： B01D71/02 , C01B3/50
摘要： PROBLEM TO BE SOLVED: To prevent the occurrence of membrane defects by dispersing and suspending chemically and electrically inert fine particles having a specified average particle diameter in a plating soln. at a specified concn. when the top of a substrate is plated with a hydrogen permeable membrane of Pd as a simple substance or a Pd alloy. SOLUTION: In order to make the amt. of hydrogen contained in a plating film as small as possible as well as to make hydrogen content distribution in the plating film as uniform as possible and to reduce the effect of uneven distribution of hydrogen, inert fine particles are dispersed in a plating soln. by 1-100 g/l. The lower limit of the particle diameter of the fine particles is regulated to 5 nm as a limiting particle diameter and the upper limit is regulated to 100 nm so that separation (settling) is hardly caused in the plating soln. Very high surface activity is imparted to the particles, the settling and separation of the particles are suppressed by Brownian movement and the particles are allowed to near the plating interface to the utmost to effectively adsorb and remove hydrogen.

82. 发明专利

JPH08215551A HYDROGEN SEPARATION MEMBRANE 失效
公开(公告)号：JPH08215551A
公开(公告)日：1996-08-27
申请号：JP2374895
申请日：1995-02-13
申请人： MITSUBISHI HEAVY IND LTD
发明人： SUEDA MINORU , FUKAYA YASUHIRO , MATSUMOTO TAKAHIRO , KOBAYASHI TOSHIRO , HIROMI TSUNETAKA , KAWAOKA TAKAYOSHI , OTA SHINSUKE
IPC分类号： B01D67/00 , B01D71/02 , C01B3/50
摘要： PURPOSE: To increase yield, to enhance durability and to prevent the deterioration of hydrogen permeability by joining a mounting frame to the end edge of a metallic porous body and joining a hydrogen-permeable metallic foil to the surface of the porous body including the frame through a specified-metal layer. CONSTITUTION: A mounting frame 6 having 0.01-1mm thickness is embedded into the end edge of the surface of a metallic porous body 4 in contact with a hydrogen-permeable metallic foil 1 so that the surface of the frame 6 is flattened and joined to the end edge. The foil 1 is joined to the surface of the porous body 4 including the frame 6 through the layer of a metal selected from Ag, Au, Pt and Cu. The yield of this hydrogen separation membrane is high in seal welding, the membrane is highly resistant to the repeated increase and decrease in temp. and pressure. Further, the hydrogen permeability of the foil is not deteriorated by the joining.

83. 发明专利

JPH08158804A GAS TURBINE BLADE 失效
公开(公告)号：JPH08158804A
公开(公告)日：1996-06-18
申请号：JP29934094
申请日：1994-12-02
申请人： MITSUBISHI HEAVY IND LTD
发明人： NAKANO YOJI , KOBAYASHI TOSHIRO
IPC分类号： F01D5/28 , C23C4/10 , C23C28/00 , F01D9/02 , F01D25/00 , F02C7/00
摘要： PURPOSE: To provide a long-life gas turbine blade which is excellent in exfoliation-resistant property and durability, by preventing corrosion of an under-coat surface. CONSTITUTION: An under coat 2 of a Co-Ni-based alloy and a top coat 3 of a stabilized zirconia are formed on the surface of a basic material 1 of a Ni- based alloy manufactured as a heat-resistant alloy, and a middle layer 4 is formed between the under coat 2 and the top coat 3. This middle layer fulfils a condition expressed as 0.5

84. 发明专利

JPH0718443A POST-TREATMENT OF VAPOR-DEPOSITED FILM 失效
公开(公告)号：JPH0718443A
公开(公告)日：1995-01-20
申请号：JP16469093
申请日：1993-07-02
申请人： MITSUBISHI HEAVY IND LTD
发明人： NAKANO YOJI , KOBAYASHI TOSHIRO , HANANAKA KATSUYASU
IPC分类号： C23C14/08 , C23C14/58
摘要： PURPOSE:To produce an SiO2 vapor-deposited film having satisfactory properties as a gas barrier. CONSTITUTION:An SiO2 coating film is formed by vapor deposition on the surface of a plastic film and this plastic film is held at >=50 deg.C, wound or rewound in an oxygen-contg. atmosphere or subjected to plasma discharge treatment in an oxygen-contg. atmosphere or before or after exposure to an oxygen- contg. atmosphere.

85. 发明专利

JPH05285356A 失效
公开(公告)号：JPH05285356A
公开(公告)日：1993-11-02
申请号：JP8709992
申请日：1992-04-08
申请人： MITSUBISHI HEAVY IND LTD
发明人： KOBAYASHI TOSHIRO , HANANAKA KATSUYASU
IPC分类号： B01D71/02 , C01B3/50 , C01B3/56 , C23C14/32 , C23C14/34
摘要： PURPOSE:To provide a production of membrane for separation of hydrogen being easily produced and being good in hydrogen permeability. CONSTITUTION:Powder 3 inserted into pores on the surface of a perforated body 1 enables easier formation of a uniform coating film 2 on the surface of the perforated body 1, and, accordingly, formation of the thin coating film 2 is made possible. Thereby, the production process of the membrane for separation of hydrogen having a high hydrogen permeation velocity is realized by forming a coating film 2 consisting of a hydrogen selectively permeable material on a surface of the perforated body 1 treated by dry plating method after tha powder 3 is inserted into pores of the surface of the perforated body 1.

86. 发明专利

JPH05238842A 失效
公开(公告)号：JPH05238842A
公开(公告)日：1993-09-17
申请号：JP4674491
申请日：1991-03-12
申请人： MITSUBISHI HEAVY IND LTD
发明人： FUKAYA YASUHIRO , KOBAYASHI TOSHIRO
IPC分类号： C04B37/00
摘要： PURPOSE:To provide a bonded silicon nitride material required to have high- temperature strength, specific strength, corrosion resistance, etc., and to provide a bonding method for the ceramic material. CONSTITUTION:Metallic aluminum and aluminum oxide and/or yttrium oxide are inserted between the bonding faces of silicon nitride ceramic pieces and hot-pressed in N2 atmosphere to effect the bonding of the silicon nitride ceramic pieces. The bonding texture is composed of an Si-Al-O-N solid solution or Si- Al-Y-O-N solid solution and satisfies the formulas 6q>=5p-290 and 9q

87. 发明专利

JPH0559531A PRODUCTION OF CUBIC BORON NITRIDE FILM 失效
公开(公告)号：JPH0559531A
公开(公告)日：1993-03-09
申请号：JP21998391
申请日：1991-08-30
申请人： MITSUBISHI HEAVY IND LTD
发明人： SUEDA MINORU , KOBAYASHI TOSHIRO , ROKKAKU TADASHI , HANANAKA KATSUYASU , YAMASHITA NOBUKI
IPC分类号： C23C14/06 , C23C14/22 , C23C16/34 , C23C16/38
摘要： PURPOSE:To form a hard cubic baron nitride film excellent in thermal conductivity and electrical insulating properties by prescribing the feeding amt. of boron atoms, the feeding rate of nitrogen ions and rare gas ions to a substrate in vacuum. CONSTITUTION:A substrate holder 3 is fitted with a substrate 5, and the inside of a vacuum chamber 1 is held to certain vacuum. Nitrogen ions and rare gas ions (argon gas) are fed from a gas introducing pipe 7 to an ion source 6, and the substrate 5 is irradiated with the ionized mixed gas. Simultaneously, boron is fed to the substrate 5 from a boron feed source 9 set directly below the substrate holder 3 to form a cubic boron nitride film on the substrate 5. At this time, the feeding amt. of boron atoms is regulated to a one more than that needed for nitrifying boron into boron nitride, and nitrogen ions and rare gas ions are irradiated at a feeding rate suitable to the feeding rate of the baron atoms. In this way, cubic baron nitride films can industially be mass-produced with good reproducibility.

88. 发明专利

JPH0533123A DEVICE FOR FORMING CBN FILM 失效
公开(公告)号：JPH0533123A
公开(公告)日：1993-02-09
申请号：JP19035591
申请日：1991-07-30
申请人： MITSUBISHI HEAVY IND LTD
发明人： YANAGI KENICHI , TSUKAMOTO EIHIKO , ROKKAKU TADASHI , HANANAKA KATSUYASU , KOBAYASHI TOSHIRO
IPC分类号： C23C14/06 , C23C14/22 , C23C14/34 , C23C14/48
摘要： PURPOSE:To form a CBN film in all attitudes by setting a boron target provided with a magnet on its back where gaseous Ar is injected. CONSTITUTION:While supplying boron 14 to a substrate 4, the film is irradiated with a rare-gas ion 13 incorporating nitrogen. An electric discharge is performed between sputtering electrodes 7 and 9. The density of the plasma 12 is increased by a magnet 8, and efficiency is increased. Boron is sputtered by the sputtering cathode 7 and Ar ion by the electric discharge. Meanwhile, a rare-gas ion 13 incorporating nitrogen is supplied to the substrate 4 from an ion gun 2 to form a nitride. A film is formed in such a manner while jointly using an ion, and a high-quality film of cubic boron nitride is formed.

89. 发明专利

JPH04246164A METHOD FOR FORMING CUBIC BORON NITRIDE FILM 失效
公开(公告)号：JPH04246164A
公开(公告)日：1992-09-02
申请号：JP962191
申请日：1991-01-30
申请人： MITSUBISHI HEAVY IND LTD
发明人： HANANAKA KATSUYASU , KOBAYASHI TOSHIRO
IPC分类号： C23C14/06 , C23C28/04
摘要： PURPOSE:To improve adhesion strength of a cubic boron nitride film by providing a titanium nitride layer and a coupling layer of titanium nitride and boron nitride. CONSTITUTION:When a cubic boron nitride film 14 is formed, a titanium nitride layer 12 and a coupling layer 13 of titanium nitride and boron nitride are provided between the cubic boron nitride film 14 and a substrate material 11 as a covering material. The titanium nitride layer is formed by ion plating, sputtering, or ion beam vapor deposition, and further, the coupling layer 13 is formed by the same method. Thereby, affinity to cubic boron is increased, which improves the adhesion property of the film.

90. 发明专利

JPH04235275A METHOD FOR FORMING CUBIC-CRYSTALLINE BORON NITRIDE FILM 失效
公开(公告)号：JPH04235275A
公开(公告)日：1992-08-24
申请号：JP1242391
申请日：1991-01-10
申请人： MITSUBISHI HEAVY IND LTD
发明人： ROKKAKU TADASHI , TSUKAMOTO EIHIKO , SUEDA MINORU , KOBAYASHI TOSHIRO , YAMASHITA NOBUKI , MORIMOTO SATOSHI
IPC分类号： C23C14/06 , C23C14/22 , C23C14/32 , C23C14/48
摘要： PURPOSE:To obtain cubic-crystalline boron nitride film having high stickness with a base material. CONSTITUTION:Irradiation of high energy ion 9 is executed with high voltage ion plantation or high voltage ion mixing and at the same time, by executing the irradiation of low energy ion 11 with low voltage ion irradiation, N ion-rich mixing layer is formed on the surface layer and after that, the cubic-crystalline boron nitride film is formed with low voltage ion vapor-deposition method or ion plating method.

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