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81. 发明申请

US20100181832A1 POWER CONVERTERS HAVING VARIED SWITCHING FREQUENCIES 有权
标题翻译：具有不同开关频率的功率转换器
公开(公告)号：US20100181832A1
公开(公告)日：2010-07-22
申请号：US12750297
申请日：2010-03-30
申请人： Li Li , Ronil D. Patel
发明人： Li Li , Ronil D. Patel
IPC分类号： G05F1/563 , G05F5/00
CPC分类号： H02M3/1588 , H02J1/08 , H02J2001/008 , H02M1/14 , Y02B70/1466 , Y10T307/406 , Y10T307/625
摘要： Systems and techniques for performing power conversion operations in a portable device are used to convert an input voltage to a voltage at an output. The conversion operations use a two-stage conversion to convert the input voltage to a first voltage and to convert the first voltage to a second voltage. A switching frequency is altered with changes in the input voltage. The switching frequency is selected based on the input voltage level and/or to maintain a substantially consistent ripple at the output, which can correspond to the first voltage and/or the second voltage.
摘要翻译：用于在便携式设备中进行功率转换操作的系统和技术用于将输入电压转换为输出端的电压。转换操作使用两级转换将输入电压转换为第一电压并将第一电压转换为第二电压。开关频率随着输入电压的变化而改变。基于输入电压电平选择开关频率和/或在输出端保持基本一致的纹波，其可对应于第一电压和/或第二电压。

82. 发明申请

US20100168210A1 T-Cell Cytokine-Inducing Surface Molecules and Methods of Use 审中-公开
标题翻译： T细胞细胞因子诱导表面分子及其使用方法
公开(公告)号：US20100168210A1
公开(公告)日：2010-07-01
申请号：US12663328
申请日：2008-06-05
申请人： Carl Keith Edwards, III , Li Li , Karen R. Jonscher , David Norris
发明人： Carl Keith Edwards, III , Li Li , Karen R. Jonscher , David Norris
IPC分类号： A61K31/7088 , A61P19/02 , A61P35/00 , A61P17/06 , A61P3/10 , A61P11/06 , A61P31/18 , A61P31/12
CPC分类号： A61K31/5377 , A61K31/4015 , A61K31/4178 , A61K31/4406 , A61K45/06
摘要： The invention provides cytokine modulators and methods for using the same to modulate cytokine production in monocyte lineage-derived cells. In particular, cytokine modulators of the invention selectively bind to a T-cell cytokine-inducing surface molecule (TCISM)-ligand of T lymphocytes or the corresponding TCISM-receptor of monocyte lineage-derived cells, thereby modulating cytokine production in monocyte lineage-derived cells.
摘要翻译：本发明提供了细胞因子调节剂及其用于调节单核细胞谱系衍生细胞中细胞因子产生的方法。特别地，本发明的细胞因子调节剂选择性地结合T细胞因子诱导表面分子（TCISM） - T淋巴细胞或相应的单核细胞谱系衍生细胞的TCISM受体，从而调节单核细胞谱系衍生的细胞因子产生细胞。

83. 发明授权

US07728144B2 Biphenyl compounds useful as muscarinic receptor antagonists 有权
标题翻译：用作毒蕈碱受体拮抗剂的联苯化合物
公开(公告)号：US07728144B2
公开(公告)日：2010-06-01
申请号：US11451179
申请日：2006-06-12
申请人： Yu-Hua Ji , Mathai Mammen , Craig Husfeld , Li Li , YongQi Mu , Aaron Kushner , Eric Stangeland , Trevor Mischki , Adam Hughes , Sarah Dunham
发明人： Yu-Hua Ji , Mathai Mammen , Craig Husfeld , Li Li , YongQi Mu , Aaron Kushner , Eric Stangeland , Trevor Mischki , Adam Hughes , Sarah Dunham
IPC分类号： C07D211/08 , A61K31/44
CPC分类号： C07D211/46 , C07D405/12 , C07D409/12 , C07D487/08
摘要： The invention provides compounds of formula I: wherein a, b, c, m, s, t, W, Z, Ar, R1, R2, R3, R6, and R7 are as defined in the specification. The compounds of formula I are muscarinic receptor antagonists. The invention also provides pharmaceutical compositions containing such compounds, processes and intermediates for preparing such compounds and methods of using such compounds to treat pulmonary disorders.
摘要翻译：本发明提供式I化合物：其中a，b，c，m，s，t，w，Z，Ar，R 1，R 2，R 3，R 6和R 7如说明书中所定义。式I的化合物是毒蕈碱受体拮抗剂。本发明还提供含有这些化合物的药物组合物，用于制备这些化合物的方法和中间体以及使用这些化合物治疗肺部疾病的方法。

84. 发明授权

US07725147B2 System and method for removing artifacts from waveforms 有权
标题翻译：用于从波形中去除伪影的系统和方法
公开(公告)号：US07725147B2
公开(公告)日：2010-05-25
申请号：US11241509
申请日：2005-09-29
申请人： Li Li , Paul Mannheimer
发明人： Li Li , Paul Mannheimer
IPC分类号： A61B5/1455 , A61B5/02
CPC分类号： A61B5/7207 , A61B5/02416 , A61B5/14551 , A61B5/4875 , G06K9/00516
摘要： A technique is provided for processing a physiological signal to compensate for artifacts. The technique includes identifying artifacts within the physiological signal. The technique also includes performing one or more multi-resolution decompositions, such as wavelet transformations, on the physiological signal and compensating for the identified artifacts in some or all of the respective decomposition components. The modified decomposition components may be reconstructed to generate an artifact-compensated signal which may be provided to a monitor or other device which is otherwise not configured to compensate for signal artifacts.
摘要翻译：提供了一种用于处理生理信号以补偿伪影的技术。该技术包括识别生理信号内的伪影。该技术还包括在生理信号上执行一个或多个多分辨率分解，例如小波变换，并补偿部分或全部相应的分解分量中所识别的人为因素。经修改的分解分量可被重建以产生伪影补偿信号，该信号可被提供给监视器或其他未被配置为补偿信号伪影的其他设备。

85. 发明申请

US20100056008A1 METHOD AND DEVICE FOR DETECTING BRIGHT DOT OR DARK DOT IN LIQUID CRYSTAL DISPLAY 有权
标题翻译：用于检测液晶显示器中的亮点或深度的方法和装置
公开(公告)号：US20100056008A1
公开(公告)日：2010-03-04
申请号：US12547794
申请日：2009-08-26
申请人： Li Li , Zhilong Peng
发明人： Li Li , Zhilong Peng
IPC分类号： H01J9/42
CPC分类号： G02F1/1309
摘要： A method for detecting a bright dot or a dark dot in a LCD comprising applying a first detection voltage to a color filter substrate common electrode and forming a first voltage difference between the color filter substrate common electrode and a pixel electrode on an array substrate; collecting a first luminance value of the bright dot or the dark dot after the bright dot or the dark dot is observed; switching the first detection voltage applied to the color filter substrate common electrode to a second detection voltage, and thus forming a second voltage difference between the color filter substrate common electrode and the pixel electrode; collecting a second luminance value of the bright dot or the dark dot; determining the difference between the first luminance value and the second luminance value, so that the bright dot or the dark dot can be determined to result from a liquid crystal cell defect or an array substrate defect.
摘要翻译：一种用于检测LCD中的亮点或暗点的方法，包括：将第一检测电压施加到滤色器基板公共电极，并在阵列基板上形成滤色器基板公共电极与像素电极之间的第一电压差; 在观察到亮点或黑点后收集亮点或暗点的第一亮度值; 将施加到滤色器基板公共电极的第一检测电压切换到第二检测电压，从而在滤色器基板公共电极和像素电极之间形成第二电压差; 收集亮点或暗点的第二亮度值; 确定第一亮度值和第二亮度值之间的差异，从而可以确定亮点或暗点是由液晶单元缺陷或阵列基板缺陷引起的。

86. 发明申请

US20100035404A1 Methods of Forming Trench Isolation and Methods of Forming Arrays of FLASH Memory Cells 有权
标题翻译：形成沟槽隔离的方法和形成闪存单元阵列的方法
公开(公告)号：US20100035404A1
公开(公告)日：2010-02-11
申请号：US12572027
申请日：2009-10-01
申请人： Li Li
发明人： Li Li
IPC分类号： H01L21/762 , H01L21/28
CPC分类号： H01L27/115 , H01L21/76224 , H01L27/11521
摘要： This invention includes methods of forming trench isolation. In one implementation, isolation trenches are provided within a semiconductor substrate. A liquid is deposited and solidified within the isolation trenches to form a solidified dielectric within the isolation trenches. The dielectric comprises carbon and silicon, and can be considered as having an elevationally outer portion and an elevationally inner portion within the isolation trenches. At least one of carbon removal from and/or oxidation of the outer portion of the solidified dielectric occurs. After such, the dielectric outer portion is etched selective to and effective to expose the dielectric inner portion. After the etching, dielectric material is deposited over the dielectric inner portion to within the isolation trenches.
摘要翻译：本发明包括形成沟槽隔离的方法。在一个实施方案中，在半导体衬底内提供隔离沟槽。在隔离沟槽内沉积和固化液体，以在隔离沟槽内形成凝固的电介质。电介质包括碳和硅，并且可以被认为具有在隔离沟槽内的正面外部部分和正面内部部分。发生固化电介质的外部部分的碳去除和/或氧化中的至少一种。此后，电介质外部部分被选择性蚀刻并有效地暴露电介质内部部分。在蚀刻之后，电介质材料沉积在电介质内部部分之上以在隔离沟槽内。

87. 发明授权

US07638639B2 Substituted pyrrolidine and related compounds 有权
公开(公告)号：US07638639B2
公开(公告)日：2009-12-29
申请号：US12011935
申请日：2008-01-30
申请人： Mathai Mammen , Adam Hughes , Yu-hua Ji , Li Li , Weijiang Zhang
发明人： Mathai Mammen , Adam Hughes , Yu-hua Ji , Li Li , Weijiang Zhang
IPC分类号： C07D207/04 , C07D211/06
CPC分类号： C07D207/08 , A61K31/40 , C07D207/09 , C07D207/16 , C07D211/34
摘要： This invention is directed to compounds of formula I: wherein R1-R5 and a-e are as defined in the specification; or pharmaceutically-acceptable salt or solvate or stereoisomer thereof. The invention also directed to pharmaceutical compositions containing such compounds; processes and intermediates useful for preparing such compounds; and methods for treating disease conditions mediated by muscarinic receptors using such compounds.

88. 发明申请

US20090269569A1 Low Temperature Process for Polysilazane Oxidation/Densification 有权
标题翻译：聚硅氮烷氧化/致密化的低温工艺
公开(公告)号：US20090269569A1
公开(公告)日：2009-10-29
申请号：US12497791
申请日：2009-07-06
申请人： Janos Fucsko , John A. Smythe, III , Li Li , Grady S. Waldo
发明人： Janos Fucsko , John A. Smythe, III , Li Li , Grady S. Waldo
IPC分类号： B32B27/00 , C08G77/00 , B32B15/08
CPC分类号： H01L21/02164 , H01L21/02222 , H01L21/02236 , H01L21/02282 , H01L21/02343 , H01L21/3125 , H01L21/316 , H01L21/76205 , H01L21/76801 , H01L21/76802 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76831 , H01L21/76832
摘要： Semiconductor devices, structures and systems that utilize a polysilazane-based silicon oxide layer or fill, and methods of making the oxide layer are disclosed. In one embodiment, a polysilazane solution is deposited on a substrate and processed with ozone in a wet oxidation at low temperature to chemically modify the polysilazane material to a silicon oxide layer.
摘要翻译：公开了利用聚硅氮烷基氧化硅层或填充物的半导体器件，结构和系统以及制造氧化物层的方法。在一个实施方案中，将聚硅氮烷溶液沉积在基底上，并在低温下经湿氧化处理臭氧，以将聚硅氮烷材料化学改性为氧化硅层。

89. 发明授权

US07591959B2 Etchants and etchant systems with plural etch selectivities 失效
标题翻译：具有多种蚀刻选择性的蚀刻剂和蚀刻剂体系
公开(公告)号：US07591959B2
公开(公告)日：2009-09-22
申请号：US11325591
申请日：2006-01-04
申请人： Li Li , Don L. Yates
发明人： Li Li , Don L. Yates
IPC分类号： C23F1/00
CPC分类号： C03C15/00 , C03C17/22 , C03C2218/32 , C03C2218/33 , H01L21/31111 , H01L21/32 , H01L21/76202
摘要： An etchant for removing materials with a plurality of selectivities exhibits a first etch selectivity at a first temperature and a second etch selectivity at a second temperature. The etchant may include phosphoric acid, fluoboric acid, or sulfuric acid. The materials that the etchant is configured to remove may include dielectric materials, such as silicon nitride and silicon oxide. The first temperature may be about 175° C. and the second temperature may be about 155° C.
摘要翻译：用于去除具有多个选择性的材料的蚀刻剂在第一温度下表现出第一蚀刻选择性，在第二温度下表现出第二蚀刻选择性。蚀刻剂可以包括磷酸，氟硼酸或硫酸。蚀刻剂被配置为去除的材料可以包括介电材料，例如氮化硅和氧化硅。第一温度可以是约175℃，第二温度可以是约155℃。

90. 发明授权

US07589426B2 Semiconductor assemblies including redistribution layers and packages and assemblies formed therefrom 有权
标题翻译：半导体组件包括再分布层和由其形成的封装和组件
公开(公告)号：US07589426B2
公开(公告)日：2009-09-15
申请号：US11516243
申请日：2006-09-06
申请人： Tongbi Jiang , Li Li , William M. Hiatt
发明人： Tongbi Jiang , Li Li , William M. Hiatt
IPC分类号： H01L23/52 , H01L23/48 , H01L23/40 , H01L23/485 , H01L23/498
CPC分类号： H01L21/486 , H01L21/4803 , H01L21/4846 , H01L21/4853 , H01L21/4857 , H01L21/561 , H01L21/6835 , H01L23/3114 , H01L23/49816 , H01L24/10 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/97 , H01L2221/68345 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/13099 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81005 , H01L2224/81801 , H01L2224/83005 , H01L2224/83102 , H01L2224/92125 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01072 , H01L2924/01074 , H01L2924/01079 , H01L2924/01087 , H01L2924/014 , H01L2924/14 , H01L2924/15174 , H01L2924/15311 , H01L2924/181 , H05K3/0032 , H05K3/0052 , H05K3/0058 , H05K3/4644 , H05K3/4682 , H05K2203/016 , H05K2203/0384 , H01L2224/81 , H01L2924/00012 , H01L2224/83 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Methods for creating redistribution layers for only selected dice, such as known good dice, to form relatively thin semiconductor component assemblies and packages, and the assemblies and packages created by the methods, are disclosed. A sacrificial layer is deposited on a support substrate. An etch stop layer having a lower etch is deposited on the sacrificial layer. Redistribution lines in a dielectric material are formed on the support substrate on the etch stop layer. Semiconductor dice, either singulated or at the wafer level, are connected to the redistribution lines. The assembly may be scribed to allow the sacrificial layer to be etched to enable removal of the semiconductor dice and associated redistribution layer from the support substrate. The etch stop layer is removed to allow access to the redistribution lines for conductive bumping.
摘要翻译：公开了用于仅为所选择的骰子创建再分布层（例如已知的骰子）以形成相对薄的半导体元件组件和封装以及由该方法产生的组件和包的方法。牺牲层沉积在支撑衬底上。具有较低蚀刻的蚀刻停止层沉积在牺牲层上。介电材料中的再分布线形成在蚀刻停止层上的支撑衬底上。单片化或晶圆级的半导体管芯连接到再分配线。可以对组件进行划线以允许蚀刻牺牲层，以便能够从支撑衬底去除半导体晶片和相关联的再分配层。去除蚀刻停止层以允许进入用于导电凸起的再分配线。

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