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    • 84. 发明授权
    • Method of treating surface of sample
    • 处理样品表面的方法
    • US06191045B1
    • 2001-02-20
    • US09302438
    • 1999-04-30
    • Motohiko YoshigaiHiroshi HasegawaHiroshi AkiyamaTakafumi TokunagaTadashi UmezawaMasayuki KojimaKazuo NojiriHiroshi KawakamiKunihiko Katou
    • Motohiko YoshigaiHiroshi HasegawaHiroshi AkiyamaTakafumi TokunagaTadashi UmezawaMasayuki KojimaKazuo NojiriHiroshi KawakamiKunihiko Katou
    • H01L2100
    • H01L21/67069H01L21/32136H01L21/32137
    • In order to provide a method of treating a multilayer including metal and polysilicon for use in a conductor or a gate electrode of a semiconductor device with high accuracy at a high selectivity, the temperature of a sample is maintained at 100° C. or higher at the time of etching a metal film to increase the etch rate of the metal film. In order to suppress the etch rate of a polysilicon film and prevent side etching, an oxygen gas is added to a gas containing a halogen element. In order to suppress the etch rate of a silicon oxide film at the time of etching the polysilicon film, the etching is performed with etch parameters which are divided into those for the metal film and those for the polysilicon film. In the etching performed to the multilayer containing metal and polysilicon, by etching the metal film at a high temperature of 100° C. or higher, the etch rate of the metal film becomes high. Consequently, there is no partial etch residue of the metal film and a barrier film. By switching the parameters to those with which the polysilicon film can be etched at a high selectivity with respect to an oxide film at the time point of completion of etching to the barrier film, very accurate treatment can be realized.
    • 为了提供以高选择性以高精度处理用于半导体器件的导体或栅电极的金属和多晶硅的多层的方法,将样品的温度保持在100℃以上 蚀刻金属膜以增加金属膜的蚀刻速率的时间。 为了抑制多晶硅膜的蚀刻速度并防止侧面蚀刻,将氧气添加到含有卤素元素的气体中。 为了抑制蚀刻多晶硅膜时的氧化硅膜的蚀刻速率,用蚀刻参数进行蚀刻,蚀刻参数分为金属膜和多晶硅膜蚀刻参数。 在对多层容纳金属和多晶硅进行的蚀刻中,通过在100℃以上的高温下蚀刻金属膜,金属膜的蚀刻速度变高。 因此,不存在金属膜和阻挡膜的部分蚀刻残留。 通过在对阻挡膜的蚀刻完成时刻将参数切换为能够以相对于氧化膜的高选择性蚀刻多晶硅膜的参数,可以实现非常精确的处理。
    • 90. 发明授权
    • Autochanger type disc player
    • AUTOCHANGER类型碟机
    • US5103437A
    • 1992-04-07
    • US241293
    • 1988-09-07
    • Hiroshi Kawakami
    • Hiroshi Kawakami
    • G11B17/26G11B17/22
    • G11B17/225
    • An autochanger type disc player characterized by the fact that it is equipped with trays that contain discs, a cartridge capable of containing plural number of trays, a vertical tray transfer member that is moved to a position corresponding to a desired tray contained in the cartridge, a tray horizontal tray transferring mechanism that turns over the tray between the vertical tray transfer member and the cartridge, and a carrier mechanism that carries the vertical tray transfer member from a position corresponding to the desired tray a disc playback position, and that the carrier mechanism is equipped with a rotating body that has plural number of cams formed corresponding to moving paths of the vertical tray transfer member from respective positions corresponding to the trays contained in the cartridge to the disc playback position, and when the vertical tray transfer member is at a position corresponding to a desired tray in the cartridge, the cam of the rotating body corresponding to the moving path between the vertical tray transfer member position and the disc playback position is selected and the vertical tray transfer member is carried by this cam.
    • 一种自动转换器型光盘播放器,其特征在于,其配备有包含盘的托盘,能够容纳多个托盘的盒,垂直托盘传送构件,其被移动到与容纳在盒中的期望托盘相对应的位置, 托盘水平托盘传送机构,其在托盘的垂直托盘传送构件和盒之间翻转,托架机构将托盘传送构件从对应于期望的托盘的位置运送到盘播放位置,托架机构 配备有旋转体,该旋转体具有与垂直托盘传送构件的移动路径相对应的多个凸轮,从对应于容纳在盒中的托盘的相应位置到盘播放位置,并且当垂直托盘传送构件处于 对应于盒中期望的托盘的位置,旋转体的凸轮对应于t o选择垂直托盘传送构件位置和光盘播放位置之间的移动路径,并且垂直托盘传送构件由该凸轮承载。