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81. 发明授权

US07749870B2 Method for producing SOI substrate 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US07749870B2
公开(公告)日：2010-07-06
申请号：US12383834
申请日：2009-03-27
申请人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Yuji Tobisaka , Shoji Akiyama , Hiroshi Tamura
发明人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Yuji Tobisaka , Shoji Akiyama , Hiroshi Tamura
IPC分类号： H01L21/322
CPC分类号： H01L21/76254 , Y10S438/964 , Y10S438/967
摘要： Provided is a method for producing an SOI substrate comprising a transparent insulating substrate and a silicon film formed on a first major surface of the insulating substrate wherein a second major surface of the insulating substrate which is opposite to the major surface is roughened, the method suppressing the generation of metal impurities and particles in a simple and easy way. More specifically, provided is a method for producing an SOI substrate comprising a transparent insulating substrate, a silicon film formed on a first major surface of the transparent insulating substrate, and a roughened second major surface, which is opposite to the first major surface, the method comprising steps of: providing the transparent insulating substrate, mirror surface-processing at least the first major surface of the transparent insulating substrate, forming a silicon film on the first major surface of the transparent insulating substrate, and laser-processing the second major surface of the transparent insulating substrate so as to roughen the second major surface by using a laser.
摘要翻译：提供一种制造SOI基板的方法，该SOI基板包括透明绝缘基板和形成在绝缘基板的第一主表面上的硅膜，其中绝缘基板的与主表面相对的第二主表面被粗糙化，该方法抑制以简单方便的方式生成金属杂质和颗粒。更具体地说，提供一种SOI基板的制造方法，其包括透明绝缘基板，形成在透明绝缘基板的第一主表面上的硅膜和与第一主表面相对的粗糙化的第二主表面，方法包括以下步骤：提供透明绝缘基板，至少透明绝缘基板的第一主表面进行镜面处理，在透明绝缘基板的第一主表面上形成硅膜，并且对第二主表面进行激光加工的透明绝缘基板，以便通过使用激光使第二主表面粗糙化。

82. 发明申请

US20100025804A1 SOI SUBSTRATE AND METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译： SOI衬底和制造SOI衬底的方法
公开(公告)号：US20100025804A1
公开(公告)日：2010-02-04
申请号：US12158047
申请日：2006-11-01
申请人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
发明人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
IPC分类号： H01L21/762 , H01L27/12
CPC分类号： H01L21/76254
摘要： On the side of a surface (the bonding surface side) of a single crystal Si substrate, a uniform ion implantation layer is formed at a prescribed depth (L) in the vicinity of the surface. The surface of the single crystal Si substrate and a surface of a transparent insulating substrate as bonding surfaces are brought into close contact with each other, and bonding is performed by heating the substrates in this state at a temperature of 350° C. or below. After this bonding process, an Si—Si bond in the ion implantation layer is broken by applying impact from the outside, and a single crystal silicon thin film is mechanically peeled along a crystal surface at a position equivalent to the prescribed depth (L) in the vicinity of the surface of the single crystal Si substrate.
摘要翻译：在单晶Si衬底的表面（接合面侧）侧，在表面附近以规定的深度（L）形成均匀的离子注入层。单晶Si衬底的表面和作为结合面的透明绝缘衬底的表面彼此紧密接触，并且通过在350℃或更低的温度下在该状态下加热衬底来进行接合。在该接合工艺之后，通过从外部施加冲击来破坏离子注入层中的Si-Si键，并且在等于规定深度（L）的位置上的晶体表面机械剥离单晶硅薄膜单晶Si衬底表面附近。

83. 发明授权

US07615456B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07615456B2
公开(公告)日：2009-11-10
申请号：US12076923
申请日：2008-03-25
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/76256 , H01L27/12
摘要： A method for manufacturing an SOI substrate superior in film thickness uniformity and resistivity uniformity in a substrate surface of a silicon layer having a film thickness reduced by an etch-back method is provided. After B ions is implanted into a front surface of a single-crystal Si substrate 10 to form a high-concentration boron added p layer 11 having a depth L in the outermost front surface, the single-crystal Si substrate 10 is appressed against a quartz substrate 20 to be bonded at a room temperature. Chemical etching is performed with respect to the single-crystal Si substrate 10 from a back surface thereof to set its thickness to L or below. A heat treatment is carried out with respect to an SOI substrate in a hydrogen containing atmosphere to outwardly diffuse B from the high-concentration boron added p layer 11, thereby acquiring a boron added p layer 12 having a desired resistance value. During this heat treatment, B in an Si crystal is diffused to the outside of the crystal in a state where it is coupled with hydrogen in the atmosphere, and a B concentration in the high-concentration boron added p layer 11 is reduced. In regard to a heat treatment temperature at this time, in view of a softening point of the insulative substrate, an upper limit of the heat treatment temperature is set to 1250° C., and 700° C. is selected as a lower limit of the temperature at which B can be diffused.
摘要翻译：提供一种制造SOI衬底的方法，该SOI衬底具有通过蚀刻方法减小的膜厚度的硅层的衬底表面中的膜厚均匀性和电阻率均匀性优异的SOI衬底。在将B离子注入到单晶Si衬底10的前表面中以形成在最外表面具有深度L的高浓度硼添加p层11之后，将单晶Si衬底10贴在石英基板20在室温下结合。从其背面对单晶硅基板10进行化学蚀刻，将其厚度设定为L以下。对含氢气氛中的SOI衬底进行热处理，从高浓度硼添加p层11向外扩散B，从而获得具有所需电阻值的添加硼的p层12。在该热处理中，Si结晶中的B在与大气中的氢相结合的状态下扩散到晶体外部，并且在高浓度硼添加p层11中的B浓度降低。就此时的热处理温度而言，考虑到绝缘基板的软化点，将热处理温度的上限设定为1250℃，选择700℃为下限值 B可以扩散的温度。

84. 发明申请

US20090221131A1 Method for preparing substrate having monocrystalline film 有权
标题翻译：制备具有单晶膜的衬底的方法
公开(公告)号：US20090221131A1
公开(公告)日：2009-09-03
申请号：US12380090
申请日：2009-02-24
申请人： Yoshihiro Kubota , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Shoji Akiyama , Yoshihiro Nojima
发明人： Yoshihiro Kubota , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Shoji Akiyama , Yoshihiro Nojima
IPC分类号： H01L21/36
CPC分类号： C30B31/20 , C30B19/12 , C30B23/025 , C30B25/183 , C30B29/04 , C30B29/06 , C30B29/16 , C30B29/36 , C30B29/40 , C30B33/02 , C30B33/06 , H01L21/76254
摘要： Provided is a method for easily preparing a substrate comprising a monocrystalline film thereon or thereabove with almost no crystal defects without using a special substrate. More specifically, provided is a method for preparing a substrate comprising a monocrystalline film formed on or above a handle substrate, the method comprising: a step A of providing a donor substrate and the handle substrate; a step B of growing a monocrystalline layer on the donor substrate; a step C of implanting ions into the monocrystalline layer on the donor substrate so as to form an ion-implanted layer; a step D of bonding a surface of the monocrystalline layer of the ion-implanted donor substrate to a surface of the handle substrate; and a step E of peeling the bonded donor substrate at the ion-implanted layer existing in the monocrystalline layer so as to form the monocrystalline film on or above the handle substrate; wherein at least the steps A to E are repeated by using the handle substrate having the monocrystalline film formed thereon or thereabove as a donor substrate.
摘要翻译：提供一种在不使用特殊基板的情况下容易地制备其上或其上的单晶膜几乎没有晶体缺陷的基板的方法。更具体地，提供了一种制备包括在手柄基板上或上方形成的单晶膜的基板的方法，所述方法包括：提供施主基板和所述手柄基板的工序A; 在施主衬底上生长单晶层的步骤B; 将离子注入施主衬底上的单晶层中以形成离子注入层的步骤C; 将离子注入的施主基板的单晶层的表面接合到手柄基板的表面的工序D; 以及在存在于单晶层中的离子注入层剥离键合的供体基板以在手柄基板上或上方形成单晶膜的步骤E; 其中通过使用其上形成有单晶膜的处理衬底或其上方作为施主衬底来重复步骤A至E的至少一个。

85. 发明申请

US20090111242A1 Method for producing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US20090111242A1
公开(公告)日：2009-04-30
申请号：US12230984
申请日：2008-09-09
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： An object of the present invention is to provide a method by which bonding at a low temperature is possible and an amount of metal contaminants in an SOI film is decreased. An embodiment of the present invention is realized in the following manner. A single crystal silicon substrate 10 surface-activated by a plasma-treatment and a quartz substrate 20 are bonded together at a low temperature, to which an external impact is given to mechanically delaminate silicon film from a single crystal silicon bulk thereby obtaining a semiconductor substrate (SOI substrate) having a silicon film (SOI film) 12. Next, the SOI substrate is subjected to a heat-treatment at a temperature of 600° C. to 1250° C. so that metal impurities accidentally mixed into an interface of the SOI film and the quartz substrate and into the SOI film in such a step as a plasma-treatment are gettered to a surface region of the silicon film 12. Then, in the end, a surface layer (gettering layer) of the silicon film 12 of the SOI substrate after the heat-treatment is removed to finally prepare an SOI film 13 and a semiconductor substrate (SOI substrate) is obtained.
摘要翻译：本发明的目的是提供一种可以在低温下进行接合并降低SOI膜中的金属污染物的量的方法。以下述方式实现本发明的实施例。通过等离子体处理表面激活的单晶硅衬底10和石英衬底20在低温下被接合在一起，对其进行外部冲击以将硅膜从单晶硅体层剥离，从而获得半导体衬底（SOI衬底）12。接下来，将SOI衬底在600℃至1250℃的温度下进行热处理，使得金属杂质意外地混入到 SOI膜和石英衬底以及诸如等离子体处理的步骤中的SOI膜被吸收到硅膜12的表面区域。然后，最后，将硅膜12的表面层（吸气层）的SOI基板，最终制作SOI膜13，得到半导体基板（SOI基板）。

86. 发明申请

US20090061591A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20090061591A1
公开(公告)日：2009-03-05
申请号：US12162134
申请日：2007-02-08
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A hydrogen ion-implanted layer is formed on the surface side of a first substrate which is a single-crystal silicon substrate. At least one of the surface of a second substrate, which is a transparent insulating substrate, and the surface of the first substrate is subjected to surface activation treatment, and the two substrates are bonded together. The bonded substrate composed of the single-crystal Si substrate and the transparent insulating substrate thus obtained is mounted on a susceptor and is placed under an infrared lamp. Light having a wave number range including an Si—H bond absorption band is irradiated at the bonded substrate for a predetermined length of time to break the Si—H bonds localized within a “microbubble layer” in the hydrogen ion-implanted layer, thereby separating a silicon thin film layer.
摘要翻译：在作为单晶硅衬底的第一衬底的表面侧上形成氢离子注入层。作为透明绝缘基板的第二基板的表面和第一基板的表面中的至少一个进行表面活化处理，并且将两个基板接合在一起。将由单晶Si衬底和由此获得的透明绝缘衬底构成的键合衬底安装在基座上并放置在红外灯下。在键合衬底上照射具有Si-H键吸收带的波数范围的光，以预定的时间长度，以破坏位于氢离子注入层中的“微泡层”内的Si-H键，从而分离硅薄膜层。

87. 发明申请

US20080251192A1 Method for manufacturing pyrolytic boron nitride composite substrate 有权
标题翻译：制造热解氮化硼复合基板的方法
公开(公告)号：US20080251192A1
公开(公告)日：2008-10-16
申请号：US12078276
申请日：2008-03-28
申请人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
发明人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
IPC分类号： B32B38/10
CPC分类号： H01L21/76254 , C23C14/48
摘要： Wettability of a PBN material surface with respect to a metal is improved to expand use applications. Hydrogen ions are implanted into a surface of a silicon substrate 10 to form an ion implanted region 11 at a predetermined depth near a surface of the silicon substrate 10, and a plasma treatment or an ozone treatment is performed with respect to a main surface of the silicon substrate 10 for the purpose of surface cleaning or surface activation. The main surfaces of the silicon substrate 10 and a PBN substrate 20 subjected to the surface treatment are appressed against each other to be bonded at a room temperature, and an external impact shock is given to the bonded substrate to mechanically delaminate a silicon film 12 from a bulk 13 of the silicon substrate to be transferred. An obtained PBN composite substrate 30 is diced to form a chip having a desired size, and a refractory metal is metallized on the silicon film 12 side to be connected with a wiring material.
摘要翻译： PBN材料表面相对于金属的润湿性得到改善以扩大使用应用。将氢离子注入到硅衬底10的表面中以在硅衬底10的表面附近的预定深度处形成离子注入区11，并且相对于硅衬底10的主表面进行等离子体处理或臭氧处理硅基板10，用于表面清洁或表面活化。经过表面处理的硅衬底10和PBN衬底20的主表面在室温下相互粘合，并且对键合衬底施加外部冲击冲击，从而将硅膜12从待转移的硅衬底的体积13。将获得的PBN复合基板30切割成具有所需尺寸的芯片，并且将难熔金属在硅膜12侧金属化以与布线材料连接。

88. 发明授权

US07190524B2 Process for fabrication of high reflectors by reversal of layer sequence and application thereof 失效
标题翻译：通过反转层序列制造高反射体的方法及其应用
公开(公告)号：US07190524B2
公开(公告)日：2007-03-13
申请号：US10917209
申请日：2004-08-12
申请人： Felix Jan Grawert , Shoji Akiyama , Kazumi Wada , Franz X. Kaertner
发明人： Felix Jan Grawert , Shoji Akiyama , Kazumi Wada , Franz X. Kaertner
IPC分类号： G02B1/10 , B05D5/06
CPC分类号： G02B5/0833
摘要： An optical reflector includes an optical reflective element that comprises alternating layers of high and low index layers. A new substrate is bonded on the optical reflective element. The sequence of layers in the reflective element is reversed in order such that the layers grown first with lowest surface roughness are exposed to the highest electric field strength, and the layer grown last, of highest roughness, are buried deep in the multilayer stack.
摘要翻译：光学反射器包括光反射元件，其包括高折射率层和低折射率层的交替层。新的衬底粘结在光学反射元件上。反射元件中的层序顺序颠倒，使得首先以最低表面粗糙度生长的层暴露于最高的电场强度，并且最后粗糙度最高的层被深埋在多层叠层中。

89. 发明申请

US20060011335A1 Tank for heat exchanger 审中-公开
标题翻译：罐换热器
公开(公告)号：US20060011335A1
公开(公告)日：2006-01-19
申请号：US10537914
申请日：2003-12-10
申请人： Hajime Ohata , Naoto Takayanagi , Shoji Akiyama , Yoshihisa Eto
发明人： Hajime Ohata , Naoto Takayanagi , Shoji Akiyama , Yoshihisa Eto
IPC分类号： F28F9/02
CPC分类号： F28D1/05391 , F28F9/0214
摘要： A die arm 34 and a punch 35 to be used to punch a hole are inserted into chambers 21 and 22 lying parallel to each other along the direction of ventilation through openings located on one side of the chambers along the lengthwise direction. A partition portion 20 has a small wall thickness T1 relative to the wall thicknesses of partition portions in the related art, in a range of equal to or greater than 0.4 mm and equal to or less than 1.65 mm, so as to ensure that the punch unit achieves a high enough level of fatigue resistance to assure a specific number of uses without a failure even though the fulcrum and the power point of the die arm 34 and the punch 35 are not on a single axis along the operating direction and also that the partition portion 20 with the smaller wall thickness still has sufficient strength to prevent deformation. Consequently, the partition portion of a tank manufactured through extrusion molding achieves an optimal wall thickness for the formation of a communication passage at the partition portion in a post-process.
摘要翻译：用于冲孔的模臂34和冲头35沿着沿着长度方向的沿着腔的一侧的开口沿着通气方向彼此平行地插入到腔室21和22中。分隔部20相对于现有技术中的分隔壁的壁厚具有小的壁厚T 1，在等于或大于0.4mm且等于或小于1.65mm的范围内，以便确保冲压单元实现足够高的耐疲劳性水平以确保具体数量的使用而不会发生故障，即使模臂34和冲头35的支点和功率点不沿着运行方向在单个轴上，并且即使具有较小壁厚的分隔部分20仍然具有足够的强度以防止变形。因此，通过挤出成型制造的罐的分隔部分在后处理中实现了用于在分隔部分形成连通通道的最佳壁厚。

90. 发明申请

US20050259922A1 Photonic bandgap modulator, amplifier, DEMUX, and TDM devices 失效
标题翻译：光子带隙调制器，放大器，DEMUX和TDM器件
公开(公告)号：US20050259922A1
公开(公告)日：2005-11-24
申请号：US10852386
申请日：2004-05-24
申请人： Shoji Akiyama , Lionel Kimerling , Kazumi Wada
发明人： Shoji Akiyama , Lionel Kimerling , Kazumi Wada
IPC分类号： G02B6/122 , G02F1/21 , G02F1/313 , G02B6/30 , G02B6/26 , G02B6/42
CPC分类号： G02F1/21 , G02F1/3136 , G02F2001/213 , G02F2202/32
摘要： An optical device includes at least two photonic bandgap crystal (PBG) stacks that are each comprised of alternating layers of high and low index materials. A defect region is formed in a cavity region between the at least two photonic bandgap crystal stacks so as to provide the properties needed to reflect light received by the optical device.
摘要翻译：光学器件包括至少两个光子带隙晶体（PBG）堆叠，每个由高和低折射率材料的交替层组成。在所述至少两个光子带隙晶体堆叠之间的空腔区域中形成缺陷区域，以便提供反射由光学器件接收的光所需的特性。

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