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81. 发明授权

US06511718B1 Method and apparatus for fabrication of thin films by chemical vapor deposition 失效
标题翻译：通过化学气相沉积制造薄膜的方法和装置
公开(公告)号：US06511718B1
公开(公告)日：2003-01-28
申请号：US09446226
申请日：1999-12-17
申请人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Jeffrey W. Bacon
发明人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Jeffrey W. Bacon
IPC分类号： H05H124
CPC分类号： C23C16/45565 , B05D1/007 , B05D1/04 , C23C16/40 , C23C16/448 , C23C16/45561 , C23C18/12 , H01L21/31691 , H01L28/55
摘要： A venturi mist generator creates a mist comprising droplets having a mean diameter less than one micron from liquid precursors containing multi-metal polyalkoxide compounds. The mist is mixed and then passed into a gasifier where the mist droplets are gasified at a temperature of between 100° C. and 250° C., which is lower than the temperature at which the precursor compounds decompose. The gasified precursor compounds are transported by carrier gas through insulated tubing at ambient temperature to prevent both condensation and premature decomposition. The gasified precursors are mixed with oxidant gas, and the gaseous reactant mixture is injected through a showerhead inlet into a deposition reactor in which a substrate is heated at a temperature of from 300° C. to 600 ° C. The gasified precursors decompose at the substrate and form a thin film of solid material on the substrate. The thin film is treated at elevated temperatures of from 500° C. to 900° C. to form polycrystalline metal oxide material, in particular, ferroelectric layered superlattice material.
摘要翻译：文丘里雾发生器产生包含具有小于1微米的平均直径的液滴的雾，所述液体前体含有多金属聚烷氧化物。将雾混合，然后进入气化器，在气化器中雾滴在100℃和250℃之间的温度下气化，该温度低于前体化合物分解的温度。气化的前体化合物通过载气在环境温度下通过绝缘管输送，以防止冷凝和过早分解。将气化的前体与氧化剂气体混合，并将气态反应物混合物通过喷头入口注入沉积反应器中，在沉积反应器中将基底在300℃至600℃的温度下加热。气化的前体在衬底并在衬底上形成固体材料的薄膜。该薄膜在500℃至900℃的高温下进行处理以形成多晶金属氧化物材料，特别是铁电层状超晶格材料。

82. 发明授权

US06370056B1 Ferroelectric memory and method of operating same 失效
标题翻译：铁电存储器和操作方法相同
公开(公告)号：US06370056B1
公开(公告)日：2002-04-09
申请号：US09523492
申请日：2000-03-10
申请人： Zheng Chen , Vikram Joshi , Myoungho Lim , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Zheng Chen , Vikram Joshi , Myoungho Lim , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： G11C1122
CPC分类号： G11C11/22
摘要： A ferroelectric non-volatile memory comprising: a plurality of memory cells, each containing an FeFET and a MOSFET, each of said FeFETs having a source, a drain, a substrate, and a gate, and each MOSFET having a pair of source/drains and a gate. The cells are arranged in an array comprising a plurality of rows and a plurality of columns. A gate line and a bit line are associated with each column, and a word line, a drain line, and a substrate line are associated with each row. One source/drain of each MOSFET is connected to its corresponding gate line; the other source/drain is connected to the gate of the FeFET in the cell. The gate of the MOSFET is connected to its corresponding word line which provides a write and erase enable signal. The drain of the FeFET is connected to its corresponding drain line, and the source of the FeFET is connected to its corresponding bit line. The substrate of each FeFET is connected to its corresponding substrate line. A read MOSFET is connected between a drain input and the drain line associated with each row. The gate of the read MOSFET is connected to an input for the read enable signal.
摘要翻译：一种铁电非易失性存储器，包括：多个存储单元，每个存储单元包含FeFET和MOSFET，每个所述FeFET具有源极，漏极，衬底和栅极，并且每个MOSFET具有一对源极/漏极和一个门。单元被布置成包括多行和多列的阵列。栅极线和位线与每列相关联，并且字线，漏极线和衬底线与每一行相关联。每个MOSFET的一个源极/漏极连接到其对应的栅极线; 另一个源极/漏极连接到电池中的FeFET的栅极。 MOSFET的栅极连接到提供写和擦除使能信号的相应字线。 FeFET的漏极连接到其对应的漏极线，并且FeFET的源极连接到其对应的位线。每个FeFET的衬底连接到其相应的衬底线。读取MOSFET连接在与每行相关联的漏极输入和漏极线之间。读取MOSFET的栅极连接到读使能信号的输入端。

83. 发明授权

US5942376A Shelf-stable liquid metal arylketone alcoholate solutions and use thereof in photoinitiated patterning of thin films 失效
标题翻译：稳定的液态金属芳基酮醇化物溶液及其在薄膜光致化图案化中的应用
公开(公告)号：US5942376A
公开(公告)日：1999-08-24
申请号：US911098
申请日：1997-08-14
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： C09D5/00 , G03F7/004 , G03F7/038 , H01L21/027 , B05D3/06
CPC分类号： G03F7/0042 , Y10S505/734
摘要： Solution films of a photosensitive metal arylketone alcoholate are micro-patterned by exposure to ultraviolet radiation under a mask. The resultant patterns are developed in an apolar solvent and annealed to provide thin film metal oxides for use in integrated circuits.
摘要翻译：光敏金属芳基酮醇化物的溶液膜通过在掩模下暴露于紫外线辐射而被微图案化。所得图案在非极性溶剂中显影并退火以提供用于集成电路的薄膜金属氧化物。

84. 发明授权

US5932295A Method and apparatus for misted liquid source deposition of thin films with increased yield 失效
标题翻译：用于雾化液体源沉积薄膜的方法和装置，其产率增加
公开(公告)号：US5932295A
公开(公告)日：1999-08-03
申请号：US963083
申请日：1997-11-03
申请人： Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L21/314 , B05D1/00 , B05D1/04 , C23C16/40 , H01L21/316 , H01L21/8242 , H01L27/108 , B05D7/24 , B05D3/02 , B05D5/12 , C23C16/00
CPC分类号： C23C18/14 , B05D1/007 , B05D1/04 , C23C16/45561 , C23C18/1216 , H01L21/31691
摘要： A mist generator produces a mist from a liquid precursor. The mist is charged and accelerated by a pair of charged electrodes in an acceleration chamber. The mist passes through a conduit charged to the same polarity of the mist particles, to a deposition chamber where they are deposited on a substrate having the opposite polarity as the particles. Infrared lamps heat the mist particles in the acceleration chamber to a temperature below the temperature at which the compounds and solvent in the liquid precursor decompose. In one embodiment the deposition chamber is tubular and a plurality of substrates are held within the chamber in a position substantially perpendicular to the direction of mist flow in the chamber. A heater and an electrical field generator in the tube add sufficient energy to the mist as it passes through the tube to provide uniform deposition of the mist on the plurality of substrates.
摘要翻译：雾发生器从液体前体产生雾。雾通过加速室中的一对充电电极进行充电和加速。雾气通过与雾颗粒相同极性的导管进入淀积室，在沉积室中沉积在具有与颗粒相反的极性的基底上。红外灯将加速室中的雾粒加热到低于液体前体中的化合物和溶剂分解的温度的温度。在一个实施例中，沉积室是管状的，并且多个基板被保持在室内大致垂直于室中雾流方向的位置。管中的加热器和电场发生器在雾通过管时向雾中增加足够的能量以提供雾在多个基板上的均匀沉积。

85. 发明授权

US5540772A Misted deposition apparatus for fabricating an integrated circuit 失效
标题翻译：用于制造集成电路的雾化沉积装置
公开(公告)号：US5540772A
公开(公告)日：1996-07-30
申请号：US320218
申请日：1994-10-11
申请人： Larry D. McMillan , Carlos A. Paz de Araujo , Tommy L. Roberts
发明人： Larry D. McMillan , Carlos A. Paz de Araujo , Tommy L. Roberts
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/115 , H01L41/24 , H05K3/10 , C23C14/00
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/409 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1287 , C23C18/1295 , C23C18/14 , C23C26/02 , C30B29/68 , C30B7/00 , H01L21/314 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/314 , H01L28/55 , H05K3/105 , Y10S427/101
摘要： A method and apparatus are disclosed for forming thin films of chemical compounds utilized in integrated circuits. The method includes steps of forming a precursor liquid comprising a chemical compound in a solvent, providing a substrate within a vacuum deposition chamber, producing a mist of the precursor liquid, and flowing the mist into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried to form a thin film of a solid material on the substrate, then the integrated circuit is completed to include at least a portion of the film of solid material in a component of the integrated circuit.
摘要翻译：公开了用于形成集成电路中使用的化学化合物的薄膜的方法和装置。该方法包括以下步骤：在溶剂中形成包含化合物的前体液体，在真空沉积室内提供基底，产生前体液体的雾，并将雾流入沉积室，同时将室保持在室温至在衬底上沉积一层前体液体。将液体干燥以在基板上形成固体材料的薄膜，然后完成集成电路以将集成电路的部件中的固体材料膜的至少一部分包括在内。

86. 发明授权

US5516363A Specially doped precursor solutions for use in methods of producing doped ABO.sub.3 -type average perovskite thin-film capacitors 失效
标题翻译：用于生产掺杂ABO3型平均钙钛矿薄膜电容器的方法中的特殊掺杂前体溶液
公开(公告)号：US5516363A
公开(公告)日：1996-05-14
申请号：US302585
申请日：1994-09-08
申请人： Masamichi Azuma , Bradley M. Melnick , Michael C. Scott , Carlos A. Paz de Araujo
发明人： Masamichi Azuma , Bradley M. Melnick , Michael C. Scott , Carlos A. Paz de Araujo
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , C09D4/00
CPC分类号： C23C16/4558 , C04B35/4682 , C04B35/6264 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1275 , C23C18/14 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3243 , C04B2235/3268 , C04B2235/441 , C04B2235/449 , C04B2235/72 , H01L28/55
摘要： Metal doping agents are introduced into metal polyoxyalkylated liquid precursor solutions for use in processes for forming thin-layer capacitors (10) to be used in integrated circuits such as DRAMS and the like. The dopants serve to reduce capacitor leakage current by altering a dominant type of electron emission, as determined by a change in the slope of a line plotted as leakage current versus bias voltage. The specially doped precursor solutions preferably include mixtures of Ce, Cr, Dy, Mn, and Ti moieties.
摘要翻译：将金属掺杂剂引入金属聚氧化烷基化液体前体溶液中，用于形成用于集成电路如DRAMS等的薄层电容器（10）的工艺。掺杂剂用于通过改变主要类型的电子发射来降低电容器的漏电流，如由斜率绘制的线的斜率所示，作为漏电流与偏置电压。特别掺杂的前体溶液优选包括Ce，Cr，Dy，Mn和Ti部分的混合物。

87. 发明授权

US5456945A Method and apparatus for material deposition 失效
标题翻译：材料沉积的方法和装置
公开(公告)号：US5456945A
公开(公告)日：1995-10-10
申请号：US993380
申请日：1992-12-18
申请人： Larry D. McMillan , Carlos A. Paz de Araujo , Tommy L. Roberts
发明人： Larry D. McMillan , Carlos A. Paz de Araujo , Tommy L. Roberts
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/115 , H01L41/24 , H05K3/10 , H01L21/00
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/409 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1287 , C23C18/1295 , C23C18/14 , C23C26/02 , C30B29/68 , C30B7/00 , H01L21/314 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/314 , H01L28/55 , H05K3/105 , Y10S427/101
摘要： A method and apparatus are disclosed for forming thin films of chemical compounds utilized in integrated circuits. The method includes steps of forming a precursor liquid comprising a chemical compound in a solvent, providing a substrate within a vacuum deposition chamber, producing a mist of the precursor liquid, and flowing the mist into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried to form a thin film of a solid material on the substrate, then the integrated circuit is completed to include at least a portion of the film of solid material in a component of the integrated circuit.
摘要翻译：公开了用于形成集成电路中使用的化学化合物的薄膜的方法和装置。该方法包括以下步骤：在溶剂中形成包含化合物的前体液体，在真空沉积室内提供基底，产生前体液体的雾，并将雾流入沉积室，同时将室保持在室温至在衬底上沉积一层前体液体。将液体干燥以在基板上形成固体材料的薄膜，然后完成集成电路以将集成电路的部件中的固体材料膜的至少一部分包括在内。

88. 发明授权

US07872900B2 Correlated electron memory 有权
标题翻译：相关电子记忆
公开(公告)号：US07872900B2
公开(公告)日：2011-01-18
申请号：US11937461
申请日：2007-11-08
申请人： Carlos A. Paz de Araujo , Jolanta Celinska , Matthew D. Brubaker
发明人： Carlos A. Paz de Araujo , Jolanta Celinska , Matthew D. Brubaker
IPC分类号： G11C11/00
CPC分类号： H01L45/04 , H01L27/2409 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A non-volatile resistive switching memory that includes a homogeneous material which changes between the insulative and conductive states due to correlations between electrons, particularly via a Mott transition. The material is crystallized into the conductive state and does not require electroforming.
摘要翻译：一种非易失性电阻式开关存储器，其包括由于电子之间的相关性而导致的绝缘和导电状态之间的均匀材料，特别是通过Mott跃迁。该材料结晶成导电状态，不需要电铸。

89. 发明申请

US20100283028A1 NON-VOLATILE RESISTANCE SWITCHING MEMORIES AND METHODS OF MAKING SAME 审中-公开
标题翻译：非易失性电阻开关存储器及其制造方法
公开(公告)号：US20100283028A1
公开(公告)日：2010-11-11
申请号：US12840870
申请日：2010-07-21
申请人： Matthew D. Brubaker , Carlos A. Paz de Araujo , Jolanta Celinska
发明人： Matthew D. Brubaker , Carlos A. Paz de Araujo , Jolanta Celinska
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： G11C13/003 , B82Y10/00 , G11C11/24 , G11C13/0007 , G11C2213/32 , G11C2213/53 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L29/685 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146
摘要： An integrated circuit memory cell including: a semiconductor having a first active area, a second active area, and a channel between the active areas; and a layer of a variable resistance material (VRM) directly above the channel. In one embodiment, there is a first conductive layer between the VRM and the channel and a second conductive layer directly above the VRM layer. The VRM preferably is a correlated electron material (CEM). The memory cell comprises a FET, such as a JFET or a MESFET. In another embodiment, there is a layer of an insulating material between the VRM and the channel. In this case, the memory cell may include a MOSFET structure.
摘要翻译：一种集成电路存储单元，包括：具有第一有源区，第二有源区和在有源区之间的沟道的半导体; 以及在通道正上方的可变电阻材料层（VRM）。在一个实施例中，在VRM和沟道之间存在第一导电层，以及VRM层正上方的第二导电层。 VRM优选为相关电子材料（CEM）。存储单元包括FET，例如JFET或MESFET。在另一个实施例中，在VRM和通道之间存在绝缘材料层。在这种情况下，存储单元可以包括MOSFET结构。

90. 发明授权

US07778063B2 Non-volatile resistance switching memories and methods of making same 有权
标题翻译：非易失性电阻转换存储器及其制作方法
公开(公告)号：US07778063B2
公开(公告)日：2010-08-17
申请号：US11937479
申请日：2007-11-08
申请人： Matthew D. Brubaker , Carlos A. Paz de Araujo , Jolanta Celinska
发明人： Matthew D. Brubaker , Carlos A. Paz de Araujo , Jolanta Celinska
IPC分类号： G11C11/00
CPC分类号： G11C13/003 , B82Y10/00 , G11C11/24 , G11C13/0007 , G11C2213/32 , G11C2213/53 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L29/685 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146
摘要： An integrated circuit memory cell including: a semiconductor having a first active area, a second active area, and a channel between the active areas; and a layer of a variable resistance material (VRM) directly above the channel. In one embodiment, there is a first conductive layer between the VRM and the channel and a second conductive layer directly above the VRM layer. The VRM preferably is a correlated electron material (CEM). The memory cell comprises a FET, such as a JFET or a MESFET. In another embodiment, there is a layer of an insulating material between the VRM and the channel. In this case, the memory cell may include a MOSFET structure.
摘要翻译：一种集成电路存储单元，包括：具有第一有源区，第二有源区和在有源区之间的沟道的半导体; 以及在通道正上方的可变电阻材料层（VRM）。在一个实施例中，在VRM和沟道之间存在第一导电层，以及VRM层正上方的第二导电层。 VRM优选为相关电子材料（CEM）。存储单元包括FET，例如JFET或MESFET。在另一个实施例中，在VRM和通道之间存在绝缘材料层。在这种情况下，存储单元可以包括MOSFET结构。

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