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81. 发明申请

US20080003506A1 Binder Resin Composition for Nonaqueous Electrolyte Energy Device Electrode, Nonaqueous Electrolyte Energy Device Electrode, and Nonaqueous Electrolyte Energy Device 有权
标题翻译：非水电解质能量装置电极，非水电解质能量装置电极和非水电解质能量装置的粘合剂树脂组合物
公开(公告)号：US20080003506A1
公开(公告)日：2008-01-03
申请号：US11575335
申请日：2005-02-28
申请人： Kenji Suzuki , Kiyotaka Mashita , Iwao Fukuchi , Satoshi Nakazawa
发明人： Kenji Suzuki , Kiyotaka Mashita , Iwao Fukuchi , Satoshi Nakazawa
IPC分类号： H01M4/02 , C08F20/06 , C08F20/44
CPC分类号： H01M4/621 , C08F220/18 , C08F220/24 , C08F220/28 , C08F220/44 , H01M4/13 , H01M4/622 , H01M10/052
摘要： An object of the present invention is to provide a binder resin composition which exhibits excellent adhesion to the negative electrode current collector and an excellent resistance to liquid electrolyte-induced swelling, and which provides an electrode having excellent flexibility and plasticity. Additional objects of the present invention are to provide, through the use of this binder resin composition, an electrode for nonaqueous electrolyte energy devices and a nonaqueous electrolyte energy device, which exhibit a high capacity as well as a smaller capacity fading during charge-discharge cycling. A binder resin composition for a nonaqueous electrolyte energy device electrode comprises a copolymer that contains a repeat unit derived from a nitrile group-containing monomer; a repeat unit derived from a monomer represented by Formula (I) (wherein R1 is H or CH3; R2 is H or monovalent hydrocarbonyl group; and n is an integer from 1 to 50) and/or a repeat unit derived from a monomer represented by Formula (II) (wherein R3 is H or CH3 and R4 is hydrogen or C4-100 alkyl); and optionally a repeat unit derived from a carboxyl group-containing monomer.
摘要翻译：本发明的目的是提供一种粘合剂树脂组合物，其对负极集电体具有优异的粘附性，并且具有优异的耐液体电解质溶胀性，并且提供了具有优异的柔韧性和可塑性的电极。本发明的另外的目的是通过使用这种粘合剂树脂组合物，提供非水电解质能装置用电极和非水电解质能装置，其在充放电循环中表现出高容量以及较小的容量衰减。非水电解质能装置用电极用粘合剂树脂组合物含有含有含腈基单体的重复单元的共聚物，衍生自由式（I）表示的单体（其中R 1是H或CH 3）的单体的重复单元; R 2是H或单价烃基; n为1至50的整数）和/或衍生自由式（II）表示的单体（其中R 3为H或CH 3）的重复单元，并且R 4是氢或C 4〜C 1-4烷基）; 和任选的衍生自含羧基单体的重复单元。

82. 发明授权

US07230285B2 Semiconductor device and hetero-junction bipolar transistor 有权
公开(公告)号：US07230285B2
公开(公告)日：2007-06-12
申请号：US10927525
申请日：2004-08-27
申请人： Satoshi Nakazawa , Yutaka Hirose , Tsuyoshi Tanaka
发明人： Satoshi Nakazawa , Yutaka Hirose , Tsuyoshi Tanaka
IPC分类号： H01L31/0328 , H01L29/06
CPC分类号： H01L29/66318 , H01L29/2003 , H01L29/7371
摘要： In an npn-type HBT, each of an emitter layer and a collector layer is formed of AlGaN and a base layer is formed of GaN. The emitter layer is in contact with a nitrogen polarity surface of the base layer and the collector layer is in contact with a gallium polarity surface of the base layer. An electric charge is generated at each interface due to a spontaneous polarization and a piezo polarization generated in each of the layers. Because of the electric charge, an internal field is generated so as to accelerate electrons in the base layer.

83. 发明申请

US20050201194A1 Data processing system, data processing method, and data processing program 审中-公开
标题翻译：数据处理系统，数据处理方法和数据处理程序
公开(公告)号：US20050201194A1
公开(公告)日：2005-09-15
申请号：US11077127
申请日：2005-03-11
申请人： Kenji Sato , Takahiro Ikeda , Satoshi Nakazawa
发明人： Kenji Sato , Takahiro Ikeda , Satoshi Nakazawa
IPC分类号： G06F17/24 , G06F9/445 , G06F9/46 , G11C8/00
CPC分类号： G06F9/543
摘要： A data processing system 30 includes a memory 61 storing at least one item of data as stored data, a data extracting section 32 connected to the memory 61, a data retrieving section 33 connected to the memory 61, and a set operation section 39. The data extracting section 32 extracts first data from data used in a first application. The set operation section 39 executes a set operation upon the first data and the stored data to produce operation result data representative of a result of the set operation. The data retrieving section 33 delivers the operation result data to a second application.
摘要翻译：数据处理系统30包括存储至少一个数据项作为存储数据的存储器61，连接到存储器61的数据提取部分32，连接到存储器61的数据检索部分33和设置操作部分39。数据提取部32从在第一应用中使用的数据中提取第一数据。设定操作部分39对第一数据和存储的数据执行设置操作，以产生表示设置操作的结果的操作结果数据。数据检索部分33将操作结果数据传送到第二应用程序。

84. 发明申请

US20050121696A1 Semiconductor device and hetero-junction bipolar transistor 有权
标题翻译：半导体器件和异质结双极晶体管
公开(公告)号：US20050121696A1
公开(公告)日：2005-06-09
申请号：US10927525
申请日：2004-08-27
申请人： Satoshi Nakazawa , Yutaka Hirose , Tsuyoshi Tanaka
发明人： Satoshi Nakazawa , Yutaka Hirose , Tsuyoshi Tanaka
IPC分类号： H01L21/331 , H01L29/20 , H01L29/737 , H01L29/739
CPC分类号： H01L29/66318 , H01L29/2003 , H01L29/7371
摘要： In an npn-type HBT, each of an emitter layer and a collector layer is formed of AlGaN and a base layer is formed of GaN. The emitter layer is in contact with a nitrogen polarity surface of the base layer and the collector layer is in contact with a gallium polarity surface of the base layer. An electric charge is generated at each interface due to a spontaneous polarization and a piezo polarization generated in each of the layers. Because of the electric charge, an internal field is generated so as to accelerate electrons in the base layer.
摘要翻译：在npn型HBT中，发射极层和集电极层由AlGaN构成，基底层由GaN形成。发射极层与基极层的氮极性表面接触，并且集电极层与基极层的镓极性表面接触。由于在各层中产生的自发极化和压电极化，在每个界面产生电荷。由于电荷，产生内部场以加速基底层中的电子。

85. 发明授权

US06867462B2 Semiconductor device using an SOI substrate and having a trench isolation and method for fabricating the same 失效
标题翻译：使用SOI衬底并具有沟槽隔离的半导体器件及其制造方法
公开(公告)号：US06867462B2
公开(公告)日：2005-03-15
申请号：US10636653
申请日：2003-08-08
申请人： Satoshi Nakazawa , Satoru Ouchi , Yasuhiro Uemoto
发明人： Satoshi Nakazawa , Satoru Ouchi , Yasuhiro Uemoto
IPC分类号： H01L21/762 , H01L21/84 , H01L27/12 , H01L27/095 , H01L29/861
CPC分类号： H01L21/76275 , H01L21/76264 , H01L21/76283 , H01L21/84 , H01L27/1203
摘要： A trench isolation region separating active regions in which MISFETs are formed includes: side insulating films covering the sides of a trench; polycrystalline semiconductor layers of a first conductivity type covering the respective sides of the side insulating films; and a polycrystalline semiconductor layer of a second conductivity type filling a gap between the polycrystalline semiconductor layers of the first conductivity type. Two pn junctions extending along the depth direction of the trench are formed between each of the polycrystalline semiconductor layers of the first conductivity type and the polycrystalline semiconductor layer of the second conductivity type. Upon application of a voltage between the active regions, a depletion layer expands in one of the pn junctions, so that the voltage is also partly applied to the depletion layer. As a result, the concentration of electric field in the side insulating films is relaxed.
摘要翻译：分离其中形成有MISFET的有源区的沟槽隔离区包括：覆盖沟槽侧面的侧绝缘膜; 覆盖侧面绝缘膜的各个侧面的第一导电类型的多晶半导体层; 以及填充第一导电类型的多晶半导体层之间的间隙的第二导电类型的多晶半导体层。在沟道的深度方向上延伸的两个pn结形成在第一导电类型的多晶半导体层和第二导电类型的多晶半导体层之间。在有源区域之间施加电压时，耗尽层在pn结中的一个中膨胀，使得电压也部分地施加到耗尽层。结果，侧绝缘膜中的电场浓度被放宽。

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