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81. 发明申请

US20110223749A1 METHOD OF FORMING NITRIDE SEMICONDUCTOR EPITAXIAL LAYER AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译：形成氮化物半导体外延层的方法和制备氮化物半导体器件的方法
公开(公告)号：US20110223749A1
公开(公告)日：2011-09-15
申请号：US12913062
申请日：2010-10-27
申请人： Hiromu SHIOMI , Yu Saitoh , Kazuhide Sumiyoshi , Akihiro Hachigo , Makoto Kiyama , Seiji Nakahata
发明人： Hiromu SHIOMI , Yu Saitoh , Kazuhide Sumiyoshi , Akihiro Hachigo , Makoto Kiyama , Seiji Nakahata
IPC分类号： H01L21/205 , H01L21/3063
CPC分类号： H01L21/0262 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/30617 , H01L21/30621 , H01L21/7813
摘要： The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate having a dislocation density lower than or equal to 1×107 cm−2 with a chemical decomposition layer interposed therebetween, the chemical decomposition layer being chemically decomposed at least with either a gas or an electrolytic solution, and decomposing the chemical decomposition layer at least with either the gas or the electrolytic solution at least either during or after the step of growing the nitride semiconductor epitaxial layer, thereby separating the nitride semiconductor epitaxial layer from the nitride semiconductor substrate. A high-quality nitride semiconductor epitaxial layer suffering less damage when separated from the nitride semiconductor substrate is thereby formed.
摘要翻译：本发明的形成氮化物半导体外延层的方法包括以下步骤：在具有低于或等于1×107cm-2的位错密度的氮化物半导体衬底上生长至少一层氮化物半导体外延层，其中化学分解层插入其间，化学分解层至少用气体或电解液进行化学分解，并且至少在气体或电解液中的化学分解层至少在生长氮化物半导体外延的步骤期间或之后分解从而将氮化物半导体外延层与氮化物半导体衬底分离。由此形成与氮化物半导体基板分离时受损少的高质量氮化物半导体外延层。

82. 发明授权

US07915149B2 Gallium nitride substrate and gallium nitride layer formation method 有权
标题翻译：氮化镓衬底和氮化镓层形成方法
公开(公告)号：US07915149B2
公开(公告)日：2011-03-29
申请号：US12136275
申请日：2008-06-10
申请人： Seiji Nakahata , Fumitaka Sato , Yoshiki Miura , Akinori Koukitu , Yoshinao Kumagai
发明人： Seiji Nakahata , Fumitaka Sato , Yoshiki Miura , Akinori Koukitu , Yoshinao Kumagai
IPC分类号： H01L21/00
CPC分类号： C30B25/00 , C30B29/406 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02581 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/207
摘要： There is disclosed a method for forming a gallium nitride layer of which resistivity is 1×106 Ω·cm or more, including steps of: forming a gallium nitride layer containing iron on a substrate; and heating said gallium nitride layer formed on said substrate.
摘要翻译：公开了形成电阻率为1×10 6Ω·cm·cm以上的氮化镓层的方法，包括以下步骤：在基板上形成含有铁的氮化镓层; 以及加热形成在所述衬底上的所述氮化镓层。

83. 发明授权

US07854804B2 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same 有权
标题翻译：氮化物晶体，氮化物晶体衬底，含外延层的氮化物晶体衬底，半导体器件及其制造方法
公开(公告)号：US07854804B2
公开(公告)日：2010-12-21
申请号：US12216236
申请日：2008-07-01
申请人： Keiji Ishibashi , Tokiko Kaji , Seiji Nakahata , Takayuki Nishiura
发明人： Keiji Ishibashi , Tokiko Kaji , Seiji Nakahata , Takayuki Nishiura
IPC分类号： C30B29/40
CPC分类号： G01N23/207 , C30B25/186 , C30B25/20 , C30B29/38 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/10 , G01B15/08 , G01N2223/602 , G01N2223/634 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L22/12 , H01L29/04 , H01L29/045 , H01L29/2003 , Y10T428/2978
摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1-d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.
摘要翻译：氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线满足特定平行晶格面的衍射条件，在由X射线穿透深度为0.3μm的平面间距d1获得的由| d1-d2 | / d2值表示的晶体的表面层处的均匀畸变并且在X射线穿透深度为5μm的平面间距d2等于或低于2.1×10-3。上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底，含氮化物晶体基板，半导体装置及其制造方法。

84. 发明申请

US20090209091A1 Method of Manufacturing Group III Nitride Crystal 失效
标题翻译：制造III类氮化物晶体的方法
公开(公告)号：US20090209091A1
公开(公告)日：2009-08-20
申请号：US12370606
申请日：2009-02-13
申请人： Fumitaka Sato , Seiji Nakahata
发明人： Fumitaka Sato , Seiji Nakahata
IPC分类号： H01L21/203
CPC分类号： C30B29/403 , C30B29/406 , C30B33/12
摘要： Made available is a Group III nitride crystal manufacturing method whereby incidence of cracking in the III-nitride crystal when the III-nitride substrate is removed is kept to a minimum. III nitride crystal manufacturing method provided with: a step of growing, onto one principal face (10m) of a III-nitride substrate (10), III-nitride crystal (20) at least either whose constituent-atom type and ratios, or whose dopant type and concentration, differ from those of the III-nitride substrate (10); and a step of removing the III-nitride substrate (10) by vapor-phase etching.
摘要翻译：可获得的是III族氮化物晶体制造方法，其中，当除去III族氮化物衬底时，III族氮化物晶体中的裂纹的发生率保持最小。 III族氮化物晶体制造方法，其特征在于，在III族氮化物衬底（10）的一个主面（10μm）上生长III族氮化物晶体（20）的步骤，至少其组成原子类型和比例，或者其掺杂剂类型和浓度不同于III族氮化物衬底（10）的掺杂剂类型和浓度; 以及通过气相蚀刻除去III族氮化物衬底（10）的步骤。

85. 发明申请

US20090208749A1 Group III Nitride Single Crystal and Method of Its Growth 有权
标题翻译：第III族氮化物单晶及其生长方法
公开(公告)号：US20090208749A1
公开(公告)日：2009-08-20
申请号：US12305001
申请日：2006-06-16
申请人： Michimasa Miyanaga , Naho Mizuhara , Shinsuke Fujiwara , Seiji Nakahata , Hideaki Nakahata
发明人： Michimasa Miyanaga , Naho Mizuhara , Shinsuke Fujiwara , Seiji Nakahata , Hideaki Nakahata
IPC分类号： B32B5/16 , C30B23/00
CPC分类号： C30B23/005 , C30B29/403 , C30B35/002 , Y10T428/2982
摘要： Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal (3) inside a crystal-growth vessel (11), the method being characterized in that a porous body formed from a metal carbide, whose porosity is between 0.1% and 70% is employed in at least a portion of the crystal-growth vessel (11). Employing the crystal-growth vessel (11) makes it possible to discharge from 1% to 50% of a source gas (4) inside the crystal-growth vessel (11) via the pores in the porous body to the outside of the crystal-growth vessel (11).
摘要翻译：提供具有良好重现性的具有良好结晶度的III族氮化物单晶的方法和通过生长方法获得的III族氮化物晶体。一种方法是在晶体生长容器（11）的内部生长III族氮化物单晶（3），其特征在于，至少使用由孔隙率在0.1％至70％之间的金属碳化物形成的多孔体晶体生长容器（11）的一部分。采用晶体生长容器（11）使得可以通过多孔体中的孔将晶体生长容器（11）内的源气体（4）的1％〜50％排出到晶体生长容器生长容器（11）。

86. 发明申请

US20080271667A1 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same 有权
公开(公告)号：US20080271667A1
公开(公告)日：2008-11-06
申请号：US12216237
申请日：2008-07-01
申请人： Keiji Ishibashi , Tokiko Kaji , Seiji Nakahata , Takayuki Nishiura
发明人： Keiji Ishibashi , Tokiko Kaji , Seiji Nakahata , Takayuki Nishiura
IPC分类号： C30B23/00
CPC分类号： G01N23/207 , C30B25/186 , C30B25/20 , C30B29/38 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/10 , G01B15/08 , G01N2223/602 , G01N2223/634 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L22/12 , H01L29/04 , H01L29/045 , H01L29/2003 , Y10T428/2978
摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

87. 发明授权

US07416604B2 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same 有权
公开(公告)号：US07416604B2
公开(公告)日：2008-08-26
申请号：US11473122
申请日：2006-06-23
申请人： Keiji Ishibashi , Tokiko Kaji , Seiji Nakahata , Takayuki Nishiura
发明人： Keiji Ishibashi , Tokiko Kaji , Seiji Nakahata , Takayuki Nishiura
IPC分类号： C30B25/12
CPC分类号： G01N23/207 , C30B25/186 , C30B25/20 , C30B29/38 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/10 , G01B15/08 , G01N2223/602 , G01N2223/634 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L22/12 , H01L29/04 , H01L29/045 , H01L29/2003 , Y10T428/2978
摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

88. 发明申请

US20070062440A1 Gallium nitride crystal substrate and method of producing same 失效
标题翻译：氮化镓晶体基板及其制造方法
公开(公告)号：US20070062440A1
公开(公告)日：2007-03-22
申请号：US11602948
申请日：2006-11-22
申请人： Fumitaka Sato , Seiji Nakahata
发明人： Fumitaka Sato , Seiji Nakahata
IPC分类号： C30B25/00 , C30B23/00 , C30B28/12 , C30B28/14
CPC分类号： C30B25/04 , C30B25/18 , C30B29/40 , C30B29/406
摘要： A low-distortion gallium nitride crystal substrate including low dislocation single crystal regions (Z) having a definite c-axis and a definite a-axis, C-plane growth regions (Y) having a c-axis and a-axis parallel to the c-axis and a-axis of the low dislocation single crystal regions (Z), voluminous defect accumulating regions (H) having a c-axis inverse to the c-axis of the low dislocation single crystal regions (Z) and an a-axis parallel with the a-axis of the low dislocation single crystal regions (Z), and 0.1/cm2 to 10/cm2 c-axis gross core regions (F) containing at least one crystal having a c-axis parallel to the c-axis of the low dislocation single crystal regions (Z) and an a-axis different from the a-axis of the low dislocation single crystal regions (Z).
摘要翻译：一种低失真氮化镓晶体基板，包括具有确定的c轴和一定a轴的低位错单晶区域（Z），C平面生长区域（Y）具有平行于低位错单晶区域（Z）的c轴和a轴，具有与低位错单晶区域（Z）的c轴相反的c轴的大量缺陷积聚区域（H）与低位错单晶区域（Z）的a轴平行的轴线和0.1 / cm 2至10 / cm 2的c轴总芯部区域（F ）含有至少一个具有与低位错单晶区域（Z）的c轴平行的c轴和不同于低位错单晶区域（Z）的a轴的a轴的晶体。

89. 发明授权

US6001759A Silicon nitride sintered body, method of preparing the same and nitrided compact 失效
标题翻译：氮化硅烧结体，其制备方法和氮化压实体
公开(公告)号：US6001759A
公开(公告)日：1999-12-14
申请号：US144116
申请日：1998-08-31
申请人： Michimasa Miyanaga , Seiji Nakahata , Akira Yamakawa
发明人： Michimasa Miyanaga , Seiji Nakahata , Akira Yamakawa
IPC分类号： C04B35/591 , C04B35/597 , C04B35/599
CPC分类号： C04B35/591 , C04B35/597
摘要： A silicon nitride sintered body prepared through a nitriding reaction of Si, consists of crystal grains mainly composed of silicon nitride and/or SIALON and a grain boundary phase. The grain boundary phase includes a first component including at least one element selected from a group of Na, K, Mg, Ca and Sr and a second component including at least one element selected from a group of Y and lanthanoid series elements. The molar ratio of the first component to the second component is in the range of 1:1 to 6:1 in terms of oxides. The mean breadth and the mean length of the crystal grains are not more than 0.1 .mu.m and not more than 3 .mu.m respectively, and the standard deviation of the mean length in the sintered body is within 1.5 .mu.m. Especially, the mean breadth of the crystal grains is at least 0.4 .mu.m and not more than 0.9 .mu.m.
摘要翻译：通过Si的氮化反应制备的氮化硅烧结体由主要由氮化硅和/或SIALON组成的晶粒和晶界相组成。晶界相包括包含选自Na，K，Mg，Ca和Sr中的至少一种元素的第一成分和包含选自Y和镧系元素的至少一种元素的第二成分。第一组分与第二组分的摩尔比以氧化物换算为1：1至6：1。晶粒的平均宽度和平均长度分别不大于0.1μm，不大于3μm，烧结体平均长度的标准偏差在1.5μm以内。特别是，晶粒的平均宽度至少为0.4μm，不大于0.9μm。

90. 发明授权

US5449648A Method for preparing an aluminum nitride sintered body 失效
标题翻译：氮化铝烧结体的制备方法
公开(公告)号：US5449648A
公开(公告)日：1995-09-12
申请号：US236707
申请日：1994-05-02
申请人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
发明人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
IPC分类号： C04B35/581 , C04B35/626 , H01L21/48 , H01L23/15 , H05K1/03 , C04B35/58
CPC分类号： C04B35/581 , H01L21/4807
摘要： An aluminum nitride sintered body has a high breakdown voltage for serving as a substrate material particularly suited to highly integrated circuits. The aluminum nitride sintered body contains titanium, which is included as a solid solute in the aluminum nitride crystal lattice in a weight ratio of at least 50 ppm and not more than 1000 ppm. The unpaired electron concentration in the sintered body as determined from an absorption spectrum of electron spin resonance is at least 1.times.10.sup.13 /g. At least 0.1 percent by weight and not more than 5.0 percent by weight, in terms of TiO.sub.2, of an oxy-nitride of titanium and aluminum exists in the aluminum nitride sintered body. The aluminum nitride sintered body has a breakdown voltage of 20 kV/mm. The sintered body is obtained by nitriding aluminum nitride raw material powder in a nitrogen atmosphere at a temperature of 800 to 1400.degree. C., adding an oxy-nitride of titanium thereto with a sintering assistant, and sintering the mixture.
摘要翻译：氮化铝烧结体具有高的击穿电压，用作特别适用于高集成电路的衬底材料。氮化铝烧结体含有钛，其以氮化铝晶格内的固体溶质以至少50ppm至不大于1000ppm的重量比包含在其中。由电子自旋共振的吸收光谱确定的烧结体中不成对的电子浓度为至少1×10 13 / g。在氮化铝烧结体中存在钛和铝的氮氧化物的至少0.1重量％且不超过5.0重量％（以TiO 2计）。氮化铝烧结体的击穿电压为20kV / mm。烧结体是通过在氮气气氛中在800〜1400℃的温度下氮化氮化铝原料粉末，用烧结助剂向其中加入钛的氮氧化物，烧结该混合物而得到的。

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