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81. 发明授权

US07336453B2 Magnetic sensing element including pinned layer and/or free layer composed of [110] crystal planes-oriented Heusler alloy 失效
标题翻译：磁感应元件包括由[110]晶面取向的Heusler合金构成的固定层和/或自由层
公开(公告)号：US07336453B2
公开(公告)日：2008-02-26
申请号：US10953647
申请日：2004-09-29
申请人： Naoya Hasegawa , Masamichi Saito , Yosuke Ide
发明人： Naoya Hasegawa , Masamichi Saito , Yosuke Ide
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , Y10T428/1107 , Y10T428/115 , Y10T428/1193
摘要： A magnetic sensing element using a thin film composed of an adequately crystallized Heusler alloy is provided. At least one of free magnetic layer and pinned magnetic layer includes a Heusler alloy layer. The Heusler alloy layer has a body-centered cubic (bcc) structure, in which equivalent crystal planes represented as [220] planes are preferentially oriented in the direction parallel to the layer surface. The Heusler alloy layer is disposed on a bcc layer having a body-centered cubic (bcc) structure, in which equivalent crystal planes represented as [110] planes are preferentially oriented in the direction parallel to the layer surface.
摘要翻译：提供了使用由适当结晶的Heusler合金构成的薄膜的磁传感元件。自由磁性层和钉扎磁性层中的至少一个包括Heusler合金层。 Heusler合金层具有体心立方（bcc）结构，其中以[220]面代表的等效晶面优先在平行于层表面的方向上取向。 Heusler合金层设置在具有体心立方（bcc）结构的bcc层中，其中以[110]面代表的等效晶面优先在平行于层表面的方向上取向。

82. 发明授权

US07295408B2 Dual type magnetic sensing element wherein ΔR×A in upstream part in flow direction of electric current is smaller than ΔR×A in downstream part 失效
标题翻译：双向磁传感元件，其中上游部分电流流向的DeltaRxA小于下游部分的ΔRxA
公开(公告)号：US07295408B2
公开(公告)日：2007-11-13
申请号：US11155289
申请日：2005-06-17
申请人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Masahiko Ishizone
发明人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Masahiko Ishizone
IPC分类号： G11B5/39
CPC分类号： G11B5/265 , G11B5/127
摘要： In a magnetic sensing element, the amounts of spin-dependent bulk scattering in the upstream part of a multilayer film and in the downstream part of the multilayer film are controlled to be asymmetric. Thus, a value ΔR×A, which represents the variation in magnetoresistance×element area, for the upstream part of the multilayer film is controlled so as to be smaller than the value ΔR×A for the downstream part of the multilayer film.
摘要翻译：在磁传感元件中，多层膜的上游部分和多层膜的下游部分中的自旋依赖性体散射量被控制为不对称。因此，对于多层膜的上游部分，代表磁阻耗散面积的变化的值ΔRxA被控制为小于多层膜的下游部分的ΔRxA的值。

83. 发明申请

US20070171579A1 TUNNEL TYPE MAGNETIC DETECTION ELEMENT IN WHICH CRYSTAL ORIENTATION OF MAGNETIC LAYER AND BARRIER LAYER IS SELECTED AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：隧道式磁性检测元件选择磁选层和阻挡层的晶体取向及其制造方法
公开(公告)号：US20070171579A1
公开(公告)日：2007-07-26
申请号：US11625147
申请日：2007-01-19
申请人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Masahiko Ishizone , Takuya Seino , Ryo Nakabayashi , Kazumasa Nishimura
发明人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Masahiko Ishizone , Takuya Seino , Ryo Nakabayashi , Kazumasa Nishimura
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G01R33/098 , H01L43/08
摘要： Described herein is a tunnel type magnetic detection element and a manufacturing method thereof. In the tunnel type magnetic detection element, an enhance layer included in a free magnetic layer disposed on an insulating barrier layer contacts the insulating barrier layer, which may be made of an oxide such as titanium oxide. Under the insulating barrier layer, a second pinned magnetic layer constituting a pinned magnetic layer is formed. The second pinned magnetic layer has a fcc structure in which crystal planes equivalent to a (111) plane are aligned parallel to a layer surface, and the insulating barrier layer is formed to have a rutile structure or the like. The enhance layer is formed to have a bcc structure in which crystal planes equivalent to a (110) plane are aligned parallel to a layer surface.
摘要翻译：这里描述的是隧道式磁检测元件及其制造方法。在隧道式磁检测元件中，包括在设置在绝缘阻挡层上的自由磁性层中的增强层与绝缘阻挡层接触，绝缘阻挡层可以由诸如氧化钛的氧化物制成。在绝缘阻挡层下面，形成构成被钉扎磁性层的第二钉扎磁性层。第二钉扎磁性层具有fcc结构，其中等同于（111）面的晶面平行于层表面排列，并且绝缘阻挡层形成为具有金红石结构等。增强层形成为具有bcc结构，其中等同于（110）面的晶面平行于层表面排列。

84. 发明申请

US20070165337A1 TUNNEL-TYPE MAGNETIC DETECTING ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：隧道式磁性检测元件及其制造方法
公开(公告)号：US20070165337A1
公开(公告)日：2007-07-19
申请号：US11622918
申请日：2007-01-12
申请人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Masahiko Ishizone , Takuya Seino , Kazumasa Nishimura , Ryo Nakabayashi
发明人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Masahiko Ishizone , Takuya Seino , Kazumasa Nishimura , Ryo Nakabayashi
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01L43/08 , H01L43/10
摘要： A tunnel-type magnetic detecting element is provided. The tunnel-type magnetic detecting element includes a first ferromagnetic layer; an insulating barrier layer; and a second ferromagnetic layer. The first ferromagnetic layer, the second ferromagnetic layer, or both have a Heusler alloy layer contacting the insulating barrier layer. Equivalent planes represented by {110} surfaces, are preferentially oriented parallel to a film surface in the Heusler alloy layer. The insulating barrier layer is formed of MgO and the equivalent crystal planes represented by the {100} surfaces or the equivalent crystal planes represented by the {110} surfaces are oriented parallel to the film surface.
摘要翻译：提供隧道式磁检测元件。隧道式磁检测元件包括第一铁磁层; 绝缘阻挡层; 和第二铁磁层。第一铁磁层，第二铁磁层或两者具有接触绝缘阻挡层的Heusler合金层。由{110}表面表示的等效平面优先取向平行于Heusler合金层中的膜表面。绝缘阻挡层由MgO形成，由{100}表面表示的等效晶面或由{110}表面表示的等效晶面定向平行于膜表面。

85. 发明授权

US07158354B2 Dual-type magnetic detecting element in which free magnetic layer and pinned magnetic layer have suitably selected β values 有权
标题翻译：双磁性检测元件，其中自由磁性层和固定磁性层具有适当选择的β值
公开(公告)号：US07158354B2
公开(公告)日：2007-01-02
申请号：US10642899
申请日：2003-08-18
申请人： Masamichi Saito , Yosuke Ide , Naoya Hasegawa
发明人： Masamichi Saito , Yosuke Ide , Naoya Hasegawa
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093
摘要： A first free magnetic layer, a second free magnetic layer, a lower pinned magnetic layer, and an upper pinned magnetic layer are formed of magnetic materials whose β values are suitably set so that the resistances for up-spin conduction electrons of all the magnetic layers become lower than those for down-spin conduction electrons when the magnetization of a free magnetic layer is changed to exhibit a lowest resistance. The magnetic detecting element exhibits an increased change in resistance per area.
摘要翻译：第一自由磁性层，第二自由磁性层，下部被钉扎的磁性层和上部被钉扎的磁性层由适当设定的β值的磁性材料形成，使得所有磁性层的上部 - 自旋传导电子的电阻当自由磁性层的磁化改变为具有最低电阻时，其变得低于用于向下自旋传导电子的电子。磁性检测元件表现出每区域电阻的增加的变化。

86. 发明申请

US20060227467A1 Magnetic detecting element with diffusion-preventing layer between spacer Cu and magnetic layer, and method of manufacturing the same 有权
标题翻译：具有隔离层Cu和磁性层之间的防扩散层的磁性检测元件及其制造方法
公开(公告)号：US20060227467A1
公开(公告)日：2006-10-12
申请号：US11396807
申请日：2006-04-03
申请人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
发明人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： H01F41/302 , B82Y25/00 , B82Y40/00 , G11B5/3903 , H01F10/1936 , H01F10/3263 , H01F10/3277 , H01F10/3281 , H01L43/08 , H01L43/10
摘要： There is provided a magnetic detecting element which can realize high reproduction power and reduce asymmetry of reproduction waveforms by devising a configuration of a free magnetic layer or a pinned magnetic layer, and a method of manufacturing a magnetic detecting element. The free magnetic layer is formed to have a three-layered structure of a CoMnZ alloy layer, a CoMnX alloy layer, and a CoMnZ alloy layer. The CoMnX alloy layer is formed of a metal compound whose compositional formula is represented by CoaMnbXc (X is one or more elements selected from a group of Ge, Sn, Ga, and Sb, a, b, and c are atomic percent, and a+b+c=100 atomic percent). The CoMnZ alloy layer is formed of a metal compound whose compositional formula is represented by CodMneZf (Z is Al or Si, d, e, and f are atomic percent, and d+e+f=100 atomic percent).
摘要翻译：提供了一种通过设计自由磁性层或钉扎磁性层的构造来实现高再现能力并减少再现波形的不对称性的磁性检测元件，以及制造磁性检测元件的方法。自由磁性层形成为具有CoMnZ合金层，CoMnX合金层和CoMnZ合金层的三层结构。 CoMnX合金层由金属化合物形成，其组成式由下式表示：（X是一个或多个元素选自Ge，Sn，Ga和Sb中的一组，a，b和c是原子百分数，a + b + c = 100原子％）。 CoMnZ合金层由金属化合物形成，其组成式由下式表示：Z为Al或Si， d，e和f是原子百分比，d + e + f = 100原子％）。

87. 发明申请

US20060198058A1 Magnetic sensor using NiFe alloy for pinned layer 有权
标题翻译：磁性传感器采用NiFe合金钉扎层
公开(公告)号：US20060198058A1
公开(公告)日：2006-09-07
申请号：US11366002
申请日：2006-02-28
申请人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
发明人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3929
摘要： A magnetic layer 14c of a pinned magnetic layer 14 has a three-layered structure formed of a CoFe layer 14c1, a NiaFeb alloy layer 14c2 (where a and b each indicate atomic percent, and 0
摘要翻译：被钉扎的磁性层14的磁性层14c具有由CoFe层14c1，NiFe2Nb合金层14c 2，（其中a和b各自表示原子百分比，并且满足0

88. 发明授权

US07077936B2 Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling film 有权
公开(公告)号：US07077936B2
公开(公告)日：2006-07-18
申请号：US10271077
申请日：2002-10-15
申请人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
发明人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
IPC分类号： C23C14/32 , C23C16/00
CPC分类号： C23C14/5806 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/025 , C23C14/165 , C23C14/3492 , C23C28/021 , C23C28/023 , C23C28/028 , G01R33/093 , G11B5/3116 , G11B5/3903 , G11B2005/3996 , H01F10/123 , H01F10/3218 , H01F10/3268 , H01F41/302 , H01F41/304 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046
摘要： A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentially oriented. The seed layer is preferably non-magnetic. Layers including the antiferromagnetic layer, a free magnetic layer, and layers therebetween, have (111) planes preferentially oriented.

89. 发明授权

US07054116B2 Spin valve element and thin film magnetic head 有权
标题翻译：自旋阀元件和薄膜磁头
公开(公告)号：US07054116B2
公开(公告)日：2006-05-30
申请号：US10631576
申请日：2003-07-31
申请人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Naoya Hasegawa
发明人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/325 , Y10T29/49044 , Y10T428/1121 , Y10T428/115
摘要： A spin valve element includes an antiferromagnetic layer, a pinned magnetic layer formed in contact with the antiferromagnetic layer so that the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer in contact with the pinned magnetic layer, and a free magnetic layer in contact with the nonmagnetic conductive layer. The free magnetic layer includes a nonmagnetic intermediate layer, and first and second free magnetic layers with the nonmagnetic intermediate layer provided therebetween, the second free magnetic layer is formed in contact with the nonmagnetic conductive layer, the first and second free magnetic layers are antiferromagnetically coupled with each other to bring both layers into a ferrimagnetic state, and either of the first and second free magnetic layers comprises a ferromagnetic insulating film. It is thus possible to increase the sensitivity to an external magnetic field, and suppress the occurrence of a shunt loss to increase the rate of change in magnetoresistance.
摘要翻译：自旋阀元件包括反铁磁层，与反铁磁层接触形成的钉扎磁性层，使得其磁化方向通过与反铁磁层的交换耦合磁场固定，与被钉扎的磁性层接触的非磁性导电层以及与非磁性导电层接触的自由磁性层。自由磁性层包括非磁性中间层，第一和第二自由磁性层，其中设置有非磁性中间层，第二自由磁性层形成为与非磁性导电层接触，第一和第二自由磁性层是反铁磁耦合的彼此使两层成为亚铁磁状态，第一和第二自由磁性层中的任一个包括铁磁绝缘膜。因此，可以增加对外部磁场的灵敏度，并且抑制分流损耗的发生以增加磁阻的变化率。

90. 发明授权

US06992867B2 Spin valve element and thin film magnetic head having antiferromagnetic coupled layers 有权
标题翻译：自旋阀元件和具有反铁磁耦合层的薄膜磁头
公开(公告)号：US06992867B2
公开(公告)日：2006-01-31
申请号：US10631565
申请日：2003-07-31
申请人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Naoya Hasegawa
发明人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/325 , Y10T29/49044 , Y10T428/1121 , Y10T428/115
摘要： A spin valve element includes an antiferromagnetic layer, a pinned magnetic layer formed in contact with the antiferromagnetic layer so that the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer in contact with the pinned magnetic layer, and a free magnetic layer in contact with the nonmagnetic conductive layer. The free magnetic layer includes a nonmagnetic intermediate layer, and first and second free magnetic layers with the nonmagnetic intermediate layer provided therebetween, the second free magnetic layer is formed in contact with the nonmagnetic conductive layer, the first and second free magnetic layers are antiferromagnetically coupled with each other to bring both layers into a ferrimagnetic state, and either of the first and second free magnetic layers comprises a ferromagnetic insulating film. It is thus possible to increase the sensitivity to an external magnetic field, and suppress the occurrence of a shunt loss to increase the rate of change in magnetoresistance.
摘要翻译：自旋阀元件包括反铁磁层，与反铁磁层接触形成的钉扎磁性层，使得其磁化方向通过与反铁磁层的交换耦合磁场固定，与被钉扎的磁性层接触的非磁性导电层以及与非磁性导电层接触的自由磁性层。自由磁性层包括非磁性中间层，第一和第二自由磁性层，其中设置有非磁性中间层，第二自由磁性层形成为与非磁性导电层接触，第一和第二自由磁性层是反铁磁耦合的彼此使两层成为亚铁磁状态，第一和第二自由磁性层中的任一个包括铁磁绝缘膜。因此，可以增加对外部磁场的灵敏度，并且抑制分流损耗的发生以增加磁阻的变化率。

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