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81. 发明授权

US07317205B2 Light emitting device and method of manufacturing a semiconductor device 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07317205B2
公开(公告)日：2008-01-08
申请号：US10238050
申请日：2002-09-10
申请人： Shunpei Yamazaki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Hideaki Kuwabara
IPC分类号： H01L29/94
CPC分类号： H01L21/02691 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L27/3262 , H01L29/12 , H01L29/6675 , H01L29/78645 , H01L29/78648
摘要： Semiconductor layers for serving as active layers of a plurality of thin film transistors in a pixel are arranged in the same direction and irradiated with laser light with the scanning direction matched to the channel length direction of the semiconductor layers. It is possible to coincide the crystal growth direction with the carrier moving direction, and high field effect mobility can be obtained. Also, semiconductor layers for serving as active layers of a plurality of thin film transistors in a driving circuit and in a CPU are arranged in the same direction, and are irradiated with laser light with the scanning direction matched to the channel length direction of the semiconductor layers.
摘要翻译：用于像素中的多个薄膜晶体管的有源层的半导体层以相同的方向布置，并且以与半导体层的沟道长度方向匹配的扫描方向的激光照射。可以使晶体生长方向与载流子移动方向一致，可以获得高场效应迁移率。此外，用于驱动电路和CPU中的多个薄膜晶体管的有源层的半导体层被布置在相同的方向上，并且以与半导体的沟道长度方向匹配的扫描方向的激光照射层。

82. 发明授权

US07303942B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07303942B2
公开(公告)日：2007-12-04
申请号：US10735767
申请日：2003-12-16
申请人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
IPC分类号： H01L21/44
CPC分类号： H01L21/6835 , H01L21/563 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L29/0657 , H01L29/66757 , H01L29/78675 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04026 , H01L2224/13111 , H01L2224/13144 , H01L2224/16225 , H01L2224/274 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/12042 , H01L2924/14 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2924/01014 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要： It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term “an integrated circuit film” means a film-like integrated circuit which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring.
摘要翻译：本发明的目的是提供一种使半导体器件更薄而不使用用于硅晶片的后磨法的技术。根据本发明，安装集成电路膜，从而使得安装集成电路膜的半导体器件更薄。术语“集成电路膜”是指基于由诸如玻璃基板或石英基板的基板上形成的半导体膜制成的集成电路制造的膜状集成电路。在本发明中，通过转印技术制造集成电路膜。

83. 发明授权

US07265391B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07265391B2
公开(公告)日：2007-09-04
申请号：US10918419
申请日：2004-08-16
申请人： Shunpei Yamazaki , Masaaki Hiroki , Masakazu Murakami , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Masaaki Hiroki , Masakazu Murakami , Hideaki Kuwabara
IPC分类号： H01L33/00
CPC分类号： H01L27/3248 , H01L27/3211 , H01L27/3216 , H01L27/322 , H01L27/3246 , H01L27/3272 , H01L27/3276 , H01L27/3279 , H01L51/5212 , H01L51/5228 , H01L51/5253 , H01L2251/5315 , Y10S257/929
摘要： To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.
摘要翻译：通过大屏幕提供具有高清晰度的像素部分的可靠性高的发光装置。根据本发明的发光器件，在设置在像素电极之间的绝缘体（24）上形成由金属膜构成的辅助电极（21），由此形成由透明导电膜形成的导电层（20）与辅助电极接触可以使电阻较小，薄。此外，辅助电极（21）用于实现与下层电极的连接，由此可以用形成在EL层上的透明导电膜将电极引出。此外，形成由层压的含有氢的膜和氮化硅膜构成的保护膜（32），由此可以实现高可靠性。

84. 发明申请

US20070167023A1 Manufacturing method for wiring 有权
标题翻译：接线方法
公开(公告)号：US20070167023A1
公开(公告)日：2007-07-19
申请号：US11715468
申请日：2007-03-08
申请人： Shunpei Yamazaki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Hideaki Kuwabara
IPC分类号： C23F1/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/32139 , C23C16/45589 , C23C16/509 , C23C16/54 , H01J2237/3342 , H01L21/2855 , H01L21/28562 , H01L21/312 , H01L21/76802 , H01L21/76838 , H01L27/124 , H01L27/1288 , H01L27/3246 , H01L51/0017 , H01L51/0022 , H01L51/5206 , H01L51/56
摘要： In the case in which a film for a resist is formed by spin coating, there is a resist material to be wasted, and the process of edge cleaning is added as required. Further, when a thin film is formed on a substrate using a vacuum apparatus, a special apparatus or equipment to evacuate the inside of a chamber vacuum is necessary, which increases manufacturing cost. The invention is characterized by including: a step of forming conductive layers on a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method; a step of discharging a compound to form resist masks so as to come into contact with the conductive layer; a step of etching the conductive layers with plasma generating means using the resist masks under the atmospheric pressure or a pressure close to the atmospheric pressure; and a step of ashing the resist masks with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure. With the above-mentioned characteristics, efficiency in use of a material is improved, and a reduction in manufacturing cost is realized.
摘要翻译：在通过旋涂形成抗蚀剂用膜的情况下，存在要浪费的抗蚀剂材料，根据需要添加边缘清洁处理。此外，当使用真空装置在基板上形成薄膜时，需要用于抽真空室内的专用装置或设备，这增加了制造成本。本发明的特征在于包括：通过CVD法，蒸发法或溅射法以选择性方式在具有电介质表面的基板上形成导电层的步骤; 将化合物排出以形成抗蚀剂掩模以与导电层接触的步骤; 在大气压或接近大气压的压力下使用抗蚀剂掩模的等离子体发生装置蚀刻导电层的步骤; 以及在大气压或接近大气压的压力下用等离子体产生装置对抗蚀剂掩模进行灰化的步骤。利用上述特征，提高了材料的使用效率，实现了制造成本的降低。

85. 发明申请

US20070114921A1 Light Emitting Device and Method of Manufacturing the Same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20070114921A1
公开(公告)日：2007-05-24
申请号：US11623618
申请日：2007-01-16
申请人： Shunpei Yamazaki , Masaaki Hiroki , Masakazu Murakami , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Masaaki Hiroki , Masakazu Murakami , Hideaki Kuwabara
IPC分类号： H01J61/52 , H01J1/62 , H01J7/24
CPC分类号： H01L27/3248 , H01L27/3211 , H01L27/3216 , H01L27/322 , H01L27/3246 , H01L27/3272 , H01L27/3276 , H01L27/3279 , H01L51/5212 , H01L51/5228 , H01L51/5253 , H01L2251/5315 , Y10S257/929
摘要： To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.
摘要翻译：通过大屏幕提供具有高清晰度的像素部分的可靠性高的发光装置。根据本发明的发光器件，在设置在像素电极之间的绝缘体（24）上形成由金属膜构成的辅助电极（21），由此形成由透明导电膜形成的导电层（20）与辅助电极接触可以使电阻较小，薄。此外，辅助电极（21）用于实现与下层电极的连接，由此可以用形成在EL层上的透明导电膜将电极引出。此外，形成由层压的含有氢的膜和氮化硅膜构成的保护膜（32），由此可以实现高可靠性。

86. 发明授权

US07180093B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07180093B2
公开(公告)日：2007-02-20
申请号：US10697941
申请日：2003-10-31
申请人： Toru Takayama , Junya Maruyama , Yumiko Ohno , Masakazu Murakami , Toshiji Hamatani , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Toru Takayama , Junya Maruyama , Yumiko Ohno , Masakazu Murakami , Toshiji Hamatani , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L29/15
CPC分类号： H01L27/3276 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1266 , H01L27/14634 , H01L27/14643 , H01L27/14683 , H01L27/3272 , H01L29/66757 , H01L29/78603 , H01L31/105 , H01L51/0024 , H01L51/003 , H01L51/5212 , H01L51/5253 , H01L2221/68368
摘要： The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials. In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.
摘要翻译：本发明的目的是通过将要剥离的层粘贴到各种基材上来提供照明的半导体器件及其制造方法。在本发明中，在基板上形成被剥离层，然后将具有蚀刻阻挡膜的密封基板用粘合材料粘贴在被剥离层上，然后通过蚀刻或抛光仅去除密封基板。剩余的蚀刻阻挡膜用作阻挡膜。此外，可以将磁片作为粘贴部件粘贴。

87. 发明授权

US07141822B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07141822B2
公开(公告)日：2006-11-28
申请号：US10066542
申请日：2002-02-05
申请人： Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Shunpei Yamazaki , Hideaki Kuwabara
发明人： Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Shunpei Yamazaki , Hideaki Kuwabara
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/02672 , H01L21/02675 , H01L27/1277 , H01L27/1296 , H01L29/66757 , H01L29/78621 , Y10S257/913
摘要： The TFT electric characteristic is ready to be influenced by the channel region in the neighborhood of an interface between a semiconductor and a gate insulating film. The present invention provides TFTs reduced in electric characteristic deviations and a method for manufacturing the same. The invention forms a region or layer containing an inactive element, or rear gas element, in the channel region. As shown in FIG. 1, a rear gas element is contained at least in an upper layer of the channel region.
摘要翻译： TFT电气特性准备好受到半导体和栅极绝缘膜之间的界面附近的沟道区的影响。本发明提供了减少电特性偏差的TFT及其制造方法。本发明在通道区域中形成含有非活性元件或后气体元件的区域或层。如图所示。如图1所示，后气体元件至少包含在通道区域的上层中。

88. 发明申请

US20060163710A1 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US20060163710A1
公开(公告)日：2006-07-27
申请号：US11374037
申请日：2006-03-14
申请人： Hideaki Kuwabara , Toru Takayama , Yuugo Goto , Junya Maruyama , Yumiko Ohno , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Toru Takayama , Yuugo Goto , Junya Maruyama , Yumiko Ohno , Shunpei Yamazaki
IPC分类号： H01L21/50 , H01L23/02
CPC分类号： H01L25/50 , H01L21/2007 , H01L21/76251 , H01L23/3128 , H01L24/16 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04042 , H01L2224/05624 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83001 , H01L2224/92247 , H01L2225/0651 , H01L2225/06517 , H01L2225/06555 , H01L2225/06558 , H01L2225/06568 , H01L2924/00014 , H01L2924/01004 , H01L2924/01029 , H01L2924/01046 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/04941 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15192 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/00012 , H01L2924/00 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2224/45099
摘要： A technique for manufacturing a low-cost, small volume, and highly integrated semiconductor device is provided. A characteristic of the present invention is that a semiconductor element formed by using a semiconductor thin film is transferred over a semiconductor element formed by using a semiconductor substrate by a transfer technique in order to manufacture a semiconductor device. Compared with the conventional manufacturing method, mass production of semiconductor devices with lower cost and higher throughput can be realized, and production cost per semiconductor device can be reduced.

89. 发明授权

US07042548B2 Image sensor having thin film transistor and photoelectric conversion element 失效
标题翻译：具有薄膜晶体管和光电转换元件的图像传感器
公开(公告)号：US07042548B2
公开(公告)日：2006-05-09
申请号：US11074020
申请日：2005-03-08
申请人： Hongyong Zhang , Masayuki Sakakura , Hideaki Kuwabara
发明人： Hongyong Zhang , Masayuki Sakakura , Hideaki Kuwabara
IPC分类号： G02F1/13 , H01L29/04
CPC分类号： H04N1/00129 , G02F1/133345 , G02F1/135 , G02F1/136227 , G02F1/13624 , G02F1/136286 , G02F2001/13312 , G02F2001/13629 , H01L27/12 , H01L27/14665 , H04M1/0264 , H04M1/0266 , H04N1/00127 , H04N1/028 , H04N1/02805
摘要： A display device using a novel semiconductor device, which includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, that is, which has both a camera function and a display function, and is made intelligent is provided and a method of manufacturing the same is also provided. One pixel includes a semiconductor device for display and a semiconductor for light reception, that is, one pixel includes semiconductor devices (insulated gate-type field effect semiconductor device) for controlling both display and light reception, so that the display device having a picture reading function is made miniaturized and compact.
摘要翻译：提供了一种使用新颖的半导体器件的显示装置，其包括像素矩阵，图像传感器和用于驱动它们的外围电路，即具有相机功能和显示功能，并且是智能的。也提供制造相同的。一个像素包括用于显示的半导体器件和用于光接收的半导体，即，一个像素包括用于控制显示和光接收的半导体器件（绝缘栅型场效应半导体器件），使得具有图像读取的显示器件功能小型化，小巧化。

90. 发明申请

US20050192129A1 Sports implement, amusement tool, and training tool 有权
标题翻译：运动器材，娱乐工具和培训工具
公开(公告)号：US20050192129A1
公开(公告)日：2005-09-01
申请号：US11064841
申请日：2005-02-25
申请人： Hideaki Kuwabara
发明人： Hideaki Kuwabara
IPC分类号： A43B5/00 , A63B43/00 , A63B43/06 , A63B49/08 , A63B53/14 , A63B59/00 , A63B69/00 , A63C5/00 , A63C5/075 , G02F1/13 , H01L27/12 , H01L27/20 , H05B33/02 , H05B33/14
CPC分类号： A63B60/46 , A63B43/06 , A63B59/00 , A63B69/00 , A63B2102/02 , A63B2102/06 , A63B2207/02 , A63B2209/14 , A63B2243/0025 , H01L27/20 , H01L41/042 , H01L41/09
摘要： The present invention provides a sports implement whose characteristics a user can adjust freely and minutely. According to the present invention, it is realized that a light-weight high functional circuit is installed in various sports implements by constituting various functional circuits with a TFT formed on a film, without using a printed board. A high functional circuit using a TFT formed over a flexible plastic film is light-weight and strong in bending and impacts. It is possible to provide a sports implement that is favorable in operationality and friendly to many users in a wide range regardless of the muscle strength or physical constitution and the like of a user, since the user can adjust characteristics of a sports implement.
摘要翻译：本发明提供了一种运动器具，其特点是使用者可以自由调节地进行调节。根据本发明，通过在不使用印刷电路板的情况下，通过构成具有形成在膜上的TFT的各种功能电路，实现了在各种运动器具中安装轻量级的高功能电路。使用在柔性塑料薄膜上形成的TFT的高功能电路重量轻，弯曲和冲击强。无论用户的肌肉力量或身体构成等如何，都可以提供一种运动效果良好且对许多用户友好的运动器具，因为用户可以调节运动器具的特性。

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