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    • 89. 发明授权
    • Magnetic-infrared-emitting diode
    • 磁性红外发光二极管
    • US4450460A
    • 1984-05-22
    • US305218
    • 1981-09-24
    • Takeshi Morimoto
    • Takeshi Morimoto
    • H01L31/0304H01L33/28H01L33/30H01S5/00H01S5/06H01S5/30H01L33/00
    • H01L31/0304H01L33/0004H01S5/30H01S5/0607Y02E10/544
    • A plate of a semiconductor having a narrow energy gap such as InSb, is applied with a magnetic field in parallel therewith and further supplied with a current in parallel therewith also as well as across the magnetic field, whereby an infrared radiation can be emitted perpendicular thereto in a wide range of temperature from room temperature to liquid nitrogen temperature.Consequently, an infrared emitting device, for instance, an infrared laser diode can be fabricated and operated at room temperature without necessity of a dewar filled with refrigerating material such as liquid nitrogen. Various kinds of compact infrared-emitting equipments such as an infrared radar can be realized by modulating the current supplied to the above infrared emitting device.
    • 具有诸如InSb的窄能隙的半导体板被施加与其并联的磁场,并且进一步与其平行地提供电流以及跨越磁场,从而可以垂直于其发射红外辐射 在从室温到液氮温度的宽范围内。 因此,红外线发射装置,例如红外激光二极管可以在室温下制造和操作,而不需要用诸如液氮的冷藏材料填充杜瓦瓶。 可以通过调制供给上述红外线发射装置的电流来实现红外线雷达等各种小型的红外线发射装置。