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81. 发明申请

US20070030932A1 Radio receiver with selectively disabled equalizer 失效
标题翻译：无线电接收机，有选择性地禁用均衡器
公开(公告)号：US20070030932A1
公开(公告)日：2007-02-08
申请号：US11198602
申请日：2005-08-05
申请人： Jie Su , Yong Wang
发明人： Jie Su , Yong Wang
IPC分类号： H04B1/10
CPC分类号： H04B1/1027
摘要： A controllable equalizer is arranged to be automatically and selectively disabled and is configured to operate in a frequency modulated (FM) radio receiver. The controllable equalizer includes an equalizer (115) that is configured to perform an equalization algorithm, e.g., CMA, that relies on a predetermined distribution for a received signal, where the received signal is available from the FM radio receiver and a spurious signal detector (123) that is configured to determine whether a spurious signal is present in the received signal and to disable the equalizer when the spurious signal is present. A method (300) of automatically and selectively disabling an equalizer operating in a frequency modulated (FM) radio receiver includes performing an equalization algorithm (307) on an FM received signal, the equalization algorithm relying on a predetermined distribution of the FM received signal, determining whether a spurious signal is present (309) in the FM received signal; and disabling the equalizer (317) when the spurious signal is present in the FM received signal.
摘要翻译：可控均衡器被布置成自动和选择性地禁用并且被配置为在调频（FM）无线电接收机中操作。可控均衡器包括均衡器（115），其被配置为执行均衡算法，例如CMA，其依赖于接收信号的预定分布，其中接收信号可从FM无线电接收机和伪信号检测器（ 123），其被配置为确定寄生信号是否存在于接收信号中，并且当寄生信号存在时禁止均衡器。自动和选择性地禁用在调频（FM）无线电接收机中操作的均衡器的方法（300）包括对FM接收信号执行均衡算法（307），所述均衡算法依赖于FM接收信号的预定分布，确定FM接收信号中是否存在杂散信号（309）; 以及当FM接收信号中存在杂散信号时禁止均衡器（317）。

82. 发明申请

US20060073680A1 Epitaxial growth of aligned algainn nanowires by metal-organic chemical vapor deposition 有权
标题翻译：通过金属有机化学气相沉积对准Algainn纳米线的外延生长
公开(公告)号：US20060073680A1
公开(公告)日：2006-04-06
申请号：US11207226
申请日：2005-08-19
申请人： Jung Han , Jie Su
发明人： Jung Han , Jie Su
IPC分类号： H01L21/36
CPC分类号： H01L21/02645 , B82Y10/00 , H01L21/0237 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02653 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/2003 , Y10S977/763
摘要： Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.
摘要翻译：在这项工作中证明了III-Nitride纳米线的高度排列和排列的外延。通过透射电子显微镜对GaN / AlN树干/分支纳米结构的详细研究，将M轴识别为优选的纳米线生长方向。晶体选择性可用于实现纳米线生长的空间和取向控制。在M面AlN衬底上制备垂直取向（Al）GaN纳米线。从GaN六边形台面或岛的M面侧延伸出的水平排列的纳米线为自对准纳米线器件，互连和网络提供了新的机遇。

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