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81. 发明申请

US20060169671A1 Plasma etching apparatus and plasma etching method 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20060169671A1
公开(公告)日：2006-08-03
申请号：US11072305
申请日：2005-03-07
申请人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Akitaka Makino , Motohiko Yoshigai
发明人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Akitaka Makino , Motohiko Yoshigai
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/32137
摘要： To provide a plasma etching apparatus that achieves a high in-plane uniformity of the CD shift. A plasma etching apparatus includes: a process chamber 26 in which a plasma etching process is performed on a process target object 1; A first gas supply source 100 for supplying a first process gas; a second gas supply source 110 for supplying a second process gas; a first gas introduction area 42-1 having a first gas introduction port for introducing the first process gas into the process chamber 26; a second gas introduction area 42-2 having a second gas introduction port 3 for introducing the second process gas into the process chamber 26; flow controllers 102, 113 for adjusting the flow rates of the process gasses; and a gas flow divider 120 for dividing the process gas into a plurality of gas flows, in which the first gas introduction port and the second gas introduction port are provided substantially in the same plane, and the first gas introduction area 42-1 and the second gas introduction area 42-2 are separated from each other.
摘要翻译：提供一种实现CD偏移的高平面内均匀性的等离子体蚀刻装置。等离子体蚀刻装置包括：对处理对象物1进行等离子体蚀刻处理的处理室26; 用于供应第一处理气体的第一气体供应源100; 用于供应第二处理气体的第二气体供应源110; 具有用于将第一处理气体引入到处理室26中的第一气体导入口的第一气体导入区域42-1; 具有用于将第二处理气体引入到处理室26中的第二气体导入口3的第二气体导入区域42-2; 流量控制器102,113，用于调节过程气体的流量; 以及用于将处理气体分成多个气流的气体分流器120，其中第一气体导入口和第二气体导入口基本上设置在同一平面上，第一气体导入区域42-1和第二气体导入区域42-2彼此分离。

82. 发明申请

US20060144518A1 Plasma processing apparatus and plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20060144518A1
公开(公告)日：2006-07-06
申请号：US11366621
申请日：2006-03-03
申请人： Tetsunori Kaji , Shinichi Tachi , Toru Otsubo , Katsuya Watanabe , Katsuhiko Mitani , Junichi Tanaka
发明人： Tetsunori Kaji , Shinichi Tachi , Toru Otsubo , Katsuya Watanabe , Katsuhiko Mitani , Junichi Tanaka
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/32678 , H01L21/67069
摘要： A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover is disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm. The electrode cover includes fine apertures to introduce a fluorine-containing etching gas, and a power supply accelerates ions in the plasma
摘要翻译：等离子体处理装置包括具有一对用于等离子体产生的相对电极的真空处理室，一个用作用于包括绝缘膜的样品的样品台的电极。在样品台电极处设置静电吸附膜，以在膜和样品后表面之间提供导热气体。还提供减压元件。此外，提供了将所述真空处理室内的气体压力设定为0.5〜4.0Pa并在电极之间施加30MHz〜200MHz的高频功率的结构。电极盖设置在另一个电极处，电极间的间隙为30mm至100mm。电极盖包括用于引入含氟蚀刻气体的细孔，并且电源加速等离子体中的离子

83. 发明申请

US20060142888A1 Process monitoring device for sample processing apparatus and control method of sample processing apparatus 有权
标题翻译：样品处理装置的过程监控装置和样品处理装置的控制方法
公开(公告)号：US20060142888A1
公开(公告)日：2006-06-29
申请号：US11356099
申请日：2006-02-17
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Kazue Takahashi
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Kazue Takahashi
IPC分类号： G06F19/00
CPC分类号： G05B21/02 , G05B19/41875 , G05B23/0221 , G05B2219/32053 , G05B2219/32182 , Y02P90/22
摘要： A plasma processing apparatus for processing a sample within a vacuum vessel, including: a plurality of sensors for detecting plural kinds of information relating to a processing state of the sample as monitor data; data selecting means for selecting a detection time range of the monitor data thus detected which is used for monitoring the plasma processing apparatus; a signal filter for converting the monitor data within the selected detection time range into an effective signal; a model expression unit for generating a predicted value of a patterned physical-shape of a sample based on the effective signal; and a display screen for displaying the patterned physical-shape predicted value; wherein the display screen displays the patterned physical-shape predicted value without measuring a patterned shape after processing of the sample.
摘要翻译：一种用于处理真空容器内的样品的等离子体处理装置，包括：多个传感器，用于检测与样品的处理状态相关的多种信息作为监测数据; 数据选择装置，用于选择用于监测等离子体处理装置的如此检测的监视数据的检测时间范围; 用于将所选择的检测时间范围内的监视数据转换为有效信号的信号滤波器; 模型表达单元，用于基于有效信号产生样本的图案化物理形状的预测值; 以及用于显示图案化物理形状预测值的显示屏幕; 其中显示屏幕在样品处理后不测量图案形状，显示图案化的物理形状预测值。

84. 发明授权

US07058467B2 Process monitoring device for sample processing apparatus and control method of sample processing apparatus 有权
公开(公告)号：US07058467B2
公开(公告)日：2006-06-06
申请号：US10987121
申请日：2004-11-15
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Kazue Takahashi
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Kazue Takahashi
IPC分类号： G06F19/00
CPC分类号： G05B21/02 , G05B19/41875 , G05B23/0221 , G05B2219/32053 , G05B2219/32182 , Y02P90/22
摘要： A monitor data acquisition section acquires a plurality of monitor data relating to a processing state of one sample in a processing apparatus, via sensors. A data selection section selects monitor data belonging to an arbitrary processing division included in a plurality of processing divisions for the sample, from among the plurality of monitor data. A monitoring signal generation section generates monitoring signals based on the monitor data belonging to the arbitrary processing division selected by the data selection section. A display setting controller displays a plurality of monitoring signals obtained with respect to samples processed in the processing apparatus, on a display section in a time series manner.

85. 发明授权

US06974909B2 IC module, and wireless information-storage medium and wireless information-transmitting/receiving apparatus including the IC module 有权
标题翻译： IC模块和包括IC模块的无线信息存储介质和无线信息发送/接收装置
公开(公告)号：US06974909B2
公开(公告)日：2005-12-13
申请号：US10443789
申请日：2003-05-23
申请人： Junichi Tanaka , Hiroyuki Takubo , Shigenobu Abe
发明人： Junichi Tanaka , Hiroyuki Takubo , Shigenobu Abe
IPC分类号： B42D15/10 , G06K17/00 , G06K19/07 , G06K19/077 , H05K1/02 , H05K3/20 , H05K3/32 , H05K3/34 , H05K5/06 , H01L23/28
CPC分类号： G06K19/0726 , G06K19/0723 , G06K19/07749 , H01L2224/48091 , H01L2924/01079 , H01L2924/19041 , H01L2924/30107 , H01L2924/3011 , H05K1/0231 , H05K3/202 , H05K3/328 , H05K3/3442 , H05K2201/09745 , H05K2201/10636 , H05K2201/10924 , H05K2203/049 , Y02P70/611 , Y02P70/613 , H01L2924/00014
摘要： An IC module includes a lead frame having terminals that are to be connected to an antenna coil of an IC card, and an IC chip and multilayer chip capacitors for tuning mounted on the lead frame and encapsulated by a resin. The multilayer chip capacitors are mounted in grooves on the lead frame.
摘要翻译： IC模块包括具有要连接到IC卡的天线线圈的端子的引线框架，以及安装在引线框架上并用树脂封装的用于调谐的IC芯片和多层片式电容器。多层片式电容器安装在引线框架上的凹槽中。

86. 发明申请

US20050189070A1 PLASMA PROCESSING APPARATUS AND PROCESSING METHOD 失效
标题翻译：等离子体加工设备和加工方法
公开(公告)号：US20050189070A1
公开(公告)日：2005-09-01
申请号：US10875213
申请日：2004-06-25
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
IPC分类号： H01L21/3065 , C23F1/00 , H01L21/00 , H01L21/26 , H01L21/306
CPC分类号： H01L21/67103 , H01J37/32522 , H01L21/67248
摘要： The present invention provides a plasma processing apparatus and processing method capable of maintaining a constant processing profile. The plasma processing apparatus for providing a plasma processing to a wafer placed in a processing chamber comprises a processing vessel 1a constituting the processing chamber 1, process gas supply devices 3, 4 for supplying processing gas to the processing chamber 1, and a plasma generating means 2 for generating plasma by supplying electromagnetic energy to the processing chamber and dissociating the process gas supplied to the processing chamber, wherein the apparatus further comprises a processing chamber surface temperature control unit 15 for controlling the inner surface temperature of the processing chamber, the control unit controlling the temperature by heating the inner surface of the processing chamber by generating plasma in the chamber for a predetermined processing time based on a processing history after terminating a cleaning process and prior to performing the wafer processing.
摘要翻译：本发明提供一种能够保持恒定的处理轮廓的等离子体处理装置和处理方法。用于向放置在处理室中的晶片提供等离子体处理的等离子体处理装置包括构成处理室1的处理容器1 a，用于向处理室1供应处理气体的处理气体供应装置3,4以及等离子体产生用于通过向处理室供应电磁能并解离供给到处理室的处理气体来产生等离子体的装置2，其中该装置还包括处理室表面温度控制单元15，用于控制处理室的内表面温度，控制通过在终止清洁处理之后和在执行晶片处理之前基于处理历史在腔室中产生等离子体预定处理时间来加热处理室的内表面来控制温度的单元。

87. 发明授权

US06864283B2 Oxy-and amino-substituted tetrahydrofuryl derivatives with antitumour activity 失效
标题翻译：具有抗肿瘤活性的羟基和氨基取代的四氢呋喃衍生物
公开(公告)号：US06864283B2
公开(公告)日：2005-03-08
申请号：US10203918
申请日：2001-02-16
申请人： Tatsuo Higa , Junichi Tanaka , Dolores Garcia Gravalos
发明人： Tatsuo Higa , Junichi Tanaka , Dolores Garcia Gravalos
IPC分类号： A61K31/341 , A61K35/56 , A61P35/00 , A61P35/02 , A61P43/00 , C07D307/22 , A61K31/34 , C07D307/02 , C07F4/28
CPC分类号： C07D307/22
摘要： Compounds of formula (I) wherein R1is selected from H, C(═O)R′, P(═O)R′R″, S(═O)R′R″, substituted or unsubstituted C1-C18 alkyl, substituted or unsubstituted C2-C18 alkenyl, substituted or unsubstituted C2-C18 alkynyl, or substituted or unsubstituted aryl; or R1 together with R2 forms a saturated or unsaturated heterocyclic ring; R2 and R3 are each, independently, selected from H, C(═O)R′, P(═O)R′R″, S(═O)R′R″, substituted or unsubstituted C1-C18 alkyl, substituted or unsubstituted C2-C18 alkenyl, substituted or unsubstituted C2-C18 alkynyl, or substituted or unsubstituted aryl; or one of R2 or R3 together with R1 forms a saturated or unsaturated heterocyclic ring; or R2 and R3 together form a saturated or unsaturated heterocyclic ring; R4 is selected from H, C(═O)R′, P(═O)R′R″, S(═O)R′R″, substituted or unsubstituted C1-C18 alkyl, substituted or unsubstituted C2-C18 alkenyl, substituted or unsubstituted C2-C18, alkynyl, or substituted or unsubstituted aryl, wherein R′ is selected from the group consisting of H, OH, NO2, NH2, SH, CN, halogen, C(═O)H, C(═O)CH3, CO2H, CO2CH3, substituted or unsubstituted C1-C18 alkyl, substituted or unsubstituted C2-C18 alkenyl, substituted or unsubstituted C2-C18 alkynyl, substituted and unsubstituted aryl; R″ is selected from the group consisting of H, OH, NO2, NH2, SH, CN, halogen, ═O, C(═O)H, C(═O)CH3, CO2H, CO2CH3, substituted or unsubstituted C1-C18 alkyl, substituted or unsubstituted C2-C18 alkenyl, substituted or unsubstituted C2-C18 alkynyl, substituted and unsubstituted aryl; wherein X1, X2 X3 on formula I are independently placed in any particular position of the chain and independently selected from H, OH, OR′, SH, SR′, SOR′, SO2R′, NO2, NH2, NHR′, N(R′)2, NHC(O)R′, CN, halogen, ═O, C(═O)H, C(═O)CH3, CO2H, CO2CH3, substituted or unsubstituted C1-C18 alkyl, substituted or unsubstituted C2-C18 alkenyl, substituted or unsubstituted C2-C18 alkynyl, substituted or unsubstituted aryl, substituted or unsubstituted heteroaromatic, wherein substituent groups defined by R′ are each independently selected from the group consisting of H, OH, OR′, SH, SR′, SOR′, SO2R′, NO2, NH2, NHR′, N(R′)2, NHC(O)R′, CN, halogen, ═O, C(═O)H, C(═O)CH3, CO2H, CO2CH3, substituted or unsubstituted C1-C18 alkyl, substituted or unsubstituted C2-C18 alkenyl, substituted or unsubstituted C2-C18 alkynyl, substituted or unsubstituted aryl, and substituted or unsubstituted heteroaromatic; wherein x is 6 to 20; and wherein the dotted lined is one or several optional double bonds placed in any particular position of the side chain; or pharmaceutically acceptable salts thereof are useful as antitumor compounds and include compound IK-8-73-4 of structure (a) which was isolated from a sponge Pachastrissa sp.
摘要翻译：其中R 1选自H，C（= O）R'，P（= O）R'R“，S（= O）R'R”，取代或未取代的C 1 -C 18烷基，取代或未取代的C 2 -C 18烯基，取代或未取代的C 2 -C 18炔基或取代或未取代的芳基; 或R 1与R 2一起形成饱和或不饱和杂环; R 2和R 3各自独立地选自H，C（= O）R'，P（= O）R'R“，S（= O）R'R”，取代或未取代的C 1 -C 18烷基，取代或未取代的C 2 -C 18烯基，取代或未取代的C 2 -C 18炔基或取代或未取代的芳基; 或R 2或R 3中的一个与R 1一起形成饱和或不饱和杂环; 或R 2和R 3一起形成饱和或不饱和杂环; R 4选自H，C（= O）R'，P（= O）R'R“，S（= O）R'R”，取代或未取代的C 1 -C 18烷基，取代或未取代的C 2 -C 18 烯基，取代或未取代的C 2 -C 18炔基或取代或未取代的芳基，其中R'选自H，OH，NO 2，NH 2，SH，CN，卤素，C（= O）H，C（ C = O）CH 3，CO 2 H，CO 2 CH 3，取代或未取代的C 1 -C 18烷基，取代或未取代的C 2 -C 18烯基，取代或未取代的C 2 -C 18炔基，取代和未取代的芳基; R“选自H，OH，NO 2，NH 2，SH，CN，卤素，= O，C（= O）H，C（= O）CH 3，CO 2 H，CO 2 CH 3，取代或未取代的C1- C18烷基，取代或未取代的C2-C18烯基，取代或未取代的C2-C18

88. 发明授权

US06828165B2 Semiconductor plasma processing apparatus with first and second processing state monitoring units 有权
标题翻译：具有第一和第二处理状态监测单元的半导体等离子体处理装置
公开(公告)号：US06828165B2
公开(公告)日：2004-12-07
申请号：US10438842
申请日：2003-05-16
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
IPC分类号： H01L2166
CPC分类号： H01L22/20 , G05B13/048 , G05B19/41865 , G05B23/024 , G05B2219/31357 , G05B2219/32058 , H01L21/67276 , H01L2924/0002 , Y02P90/12 , Y02P90/14 , Y02P90/18 , Y02P90/20 , H01L2924/00
摘要： A semiconductor plasma processing apparatus for processing a semiconductor wafer includes a sensor for monitoring at least one processing state of the semiconductor plasma processing apparatus, first and second processing state monitoring units coupled to the sensor, and a selector unit for selecting one of the first and second processing state monitoring units.
摘要翻译：一种用于处理半导体晶片的半导体等离子体处理装置，包括用于监视半导体等离子体处理装置的至少一个处理状态的传感器，耦合到传感器的第一和第二处理状态监控单元，以及选择器单元，用于选择第一和第第二处理状态监控单元。

89. 发明授权

US06747239B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06747239B2
公开(公告)日：2004-06-08
申请号：US10437030
申请日：2003-05-14
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Ryoji Nishio , Seiichiro Kanno , Hideyuki Yamamoto
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Ryoji Nishio , Seiichiro Kanno , Hideyuki Yamamoto
IPC分类号： B23K1000
CPC分类号： H01L21/67253 , H01J37/32935
摘要： A plasma processing apparatus having a process chamber to process specimens; a status detecting unit for detecting the internal processing status of the process chamber and outputting a plurality of signals; and a signal converting unit for extracting an arbitrary number of signal processing filters from a signal filter database using a signal filter selector and creating an arbitrary number of device status signals. The signal converting unit creates fewer effective device status signals of a time series from the output signals.
摘要翻译：一种等离子体处理装置，具有处理试样的处理室; 状态检测单元，用于检测处理室的内部处理状态并输出多个信号; 以及信号转换单元，用于使用信号滤波器选择器从信号滤波器数据库中提取任意数量的信号处理滤波器，并创建任意数量的装置状态信号。信号转换单元从输出信号产生一个时间序列的有效装置状态信号。

90. 发明授权

US06733618B2 Disturbance-free, recipe-controlled plasma processing system and method 有权
标题翻译：无干扰，配方控制等离子体处理系统和方法
公开(公告)号：US06733618B2
公开(公告)日：2004-05-11
申请号：US09946503
申请日：2001-09-06
申请人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
发明人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
IPC分类号： C23F100
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/45031 , H01J37/32935 , H01L22/26 , Y02P90/20 , Y02P90/22
摘要： A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.
摘要翻译：一种可以抑制由干扰引起的影响的等离子体处理控制系统和方法。控制系统包括：等离子体处理器，用于对容纳在真空处理室内的样品执行处理操作，用于在等离子体处理器的处理操作期间监视处理参数的传感器，用于基于等离子体处理器估计处理结果的处理结果估计模型传感器的监视输出和预设处理结果预测方程，以及用于基于处理结果估计模型的估计结果计算处理条件的校正值的最佳配方计算模型，使得处理结果成为目标值。基于由最佳配方计算模型生成的配方来控制等离子体处理器。

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