专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20130140550A1 ORGANIC LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD THEREOF 有权
标题翻译：有机发光元件及其生产方法
公开(公告)号：US20130140550A1
公开(公告)日：2013-06-06
申请号：US13816468
申请日：2011-08-12
申请人： Yeon Keun Lee , Minsoo Kang , Jong Seok Kim
发明人： Yeon Keun Lee , Minsoo Kang , Jong Seok Kim
IPC分类号： H01L51/52 , H01L33/36
CPC分类号： H01L51/5203 , H01L33/36 , H01L51/0011 , H01L51/0021 , H01L51/5209 , H01L51/5225 , H01L51/56 , H01L2251/5361
摘要： The present invention relates to an organic light-emitting element and a production method thereof. Specifically, the present invention relates to an organic light-emitting element, which has excellent productivity during mass production thereof and may allow simplification of vapor deposition equipment, and the like, and a production method thereof.
摘要翻译：本发明涉及有机发光元件及其制造方法。具体地说，本发明涉及一种有机发光元件及其制造方法，该有机发光元件在其大规模生产中具有优异的生产率并且可以简化气相沉积设备等。

82. 发明申请

US20130069731A1 METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD 审中-公开
标题翻译：使用相同方法制造的多阶段衬底蚀刻和TERAHERTZ振荡器的方法
公开(公告)号：US20130069731A1
公开(公告)日：2013-03-21
申请号：US13606533
申请日：2012-09-07
申请人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun IL Kim
发明人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun IL Kim
IPC分类号： H03B28/00 , B44C1/22
CPC分类号： H03B28/00 , B44C1/227 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/00
摘要： A method of multi-stage substrate etching, includes forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface.
摘要翻译：一种多级衬底蚀刻的方法，包括在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模，将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，由此防止在台面上出现底面和突出结构中的曲率半径。

83. 发明授权

US08293124B2 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US08293124B2
公开(公告)日：2012-10-23
申请号：US12073311
申请日：2008-03-04
申请人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
发明人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
IPC分类号： G03F7/20 , B44C1/22
CPC分类号： H03B28/00 , B44C1/227 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/00
摘要： A method of multi-stage substrate etching is provided. The method comprises the steps of: forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface, so that etching quality is improved, a precise bonding between the substrates is obtained using the alignment key positioned on each substrate, and a multi-layer process is carried out.
摘要翻译：提供了一种多级衬底蚀刻的方法。该方法包括以下步骤：在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，从而防止在台面上出现底面和突出结构中的曲率半径的出现，因此改善了蚀刻质量，使用位于每个衬底上的对准键来获得衬底之间的精确结合，并且进行多层工艺。

84. 发明授权

US08092702B2 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US08092702B2
公开(公告)日：2012-01-10
申请号：US12025186
申请日：2008-02-04
申请人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
发明人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
IPC分类号： B44C1/22
CPC分类号： H01P11/003 , Y10T428/24802
摘要： A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate, whereby the etched bottom is made uniformly even in a deep step, the edge curvature is minimized, and a T-shape is prevented from being formed on the etched wall face to thereby improve the etching quality. Further, the etching depth is previously controlled by lapping or polishing, the upper and lower substrates are precisely boned to each other using the alignment key, and a multi-layer processing is possibly performed thereto, so that the precision and the uniformity in structure of the oscillator or amplifier is obtained.
摘要翻译：提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。该方法包括以下步骤：在第一衬底的任何一个表面上形成第一掩模图案，通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔，将第一衬底粘合到第一衬底上，与要蚀刻的深度相同的厚度，在第二衬底上形成第二掩模图案，通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔，并且去除在第一衬底之间具有蚀刻选择性的氧化物层衬底和第二衬底，由此蚀刻的底部均匀地均匀地制成，即使在深度阶段，边缘曲率最小化，并且防止在蚀刻的壁面上形成T形，从而提高蚀刻质量。此外，通过研磨或研磨预先控制蚀刻深度，使用对准键将上下基板彼此精确地相互结合，并且可以对其进行多层处理，使得精度和结构的均匀性获得振荡器或放大器。

85. 发明授权

US07621156B2 Cabinet for washing machine and washing machine using the same 失效
标题翻译：洗衣机柜和洗衣机使用相同
公开(公告)号：US07621156B2
公开(公告)日：2009-11-24
申请号：US10498905
申请日：2003-09-09
申请人： Jong Seok Kim , Yang Hwan No , Han Ki Cho , Yeon Su Jung , Jung Hoon Kang , Myung Sik Park , Young Hoon Ha
发明人： Jong Seok Kim , Yang Hwan No , Han Ki Cho , Yeon Su Jung , Jung Hoon Kang , Myung Sik Park , Young Hoon Ha
IPC分类号： D06F35/00 , E05D7/10
CPC分类号： D06F39/12 , Y10T16/535
摘要： Cabinet for a washing machine is disclosed. The present invention provides a cabinet for washing machine including a base panel 10, one pair of side panels 20 provided to opposite edges of the base panel 10, a front panel 30 provided to front edges of the base 10 and side panels 20, a rear panel 40 provided to rear edges of the base 10 and side panels 20, and a top panel 50 detachably provided to top edges of the side, front, and rear panels 20, 30, and 40.
摘要翻译：公开了一种用于洗衣机的机柜。本发明提供了一种用于洗衣机的机柜，其包括基板10，设置在基板10的相对边缘的一对侧板20，设置在基座10和侧板20的前边缘上的前板30，设置在基座10和侧面板20的后边缘的面板40以及可拆卸地设置在侧面，前面板和后面板20,30和40的顶部边缘上的顶板50。

86. 发明授权

US07581414B2 Door for washing machine and dryer and washing machine and dryer having the same 有权
标题翻译：洗衣机和烘干机门和洗衣机和烘干机相同
公开(公告)号：US07581414B2
公开(公告)日：2009-09-01
申请号：US10471181
申请日：2003-01-09
申请人： Jong Seok Kim , Yang Hwan No , Han Ki Cho , Yeon Su Jung , Jung Hoon Kang , Myung Sik Park , Young Hoon Ha
发明人： Jong Seok Kim , Yang Hwan No , Han Ki Cho , Yeon Su Jung , Jung Hoon Kang , Myung Sik Park , Young Hoon Ha
IPC分类号： D06F39/14
CPC分类号： D06F37/28 , D06F39/14 , Y10T16/558
摘要： A door for a washing machine or a dryer includes a frame having a system for opening/closing an opening provided for introducing laundry into a washing machine or a dryer, and a hinge assembly. The hinge assembly includes a bracket attached to an inside surface of a housing of the washing machine or the dryer, and a hinge arm. The hinge arm has a first member rotatably connected to the bracket, and a second member extended in succession to the first member and rotatably connected to the frame for being drawn to an outside of the washing machine and the dryer, thereby enabling the door to be rotated relative to the bracket and the hinge arm respectively, so as to be opened at a great angle.
摘要翻译：洗衣机或干衣机的门包括具有用于打开/关闭用于将衣物引入洗衣机或干衣机中的开口的系统的框架和铰链组件。铰链组件包括附接到洗衣机或干衣机的壳体的内表面的支架和铰链臂。铰链臂具有可旋转地连接到支架的第一构件和连续延伸到第一构件的第二构件，并且可旋转地连接到框架以被抽吸到洗衣机和干衣机的外部，从而使门能够分别相对于支架和铰链臂旋转，以便以大的角度打开。

87. 发明申请

US20090120903A1 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US20090120903A1
公开(公告)日：2009-05-14
申请号：US12073311
申请日：2008-03-04
申请人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
发明人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
IPC分类号： G03F7/20 , B44C1/22
CPC分类号： H03B28/00 , B44C1/227 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/00
摘要： A method of multi-stage substrate etching is provided. The method comprises the steps of: forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface, so that etching quality is improved, a precise bonding between the substrates is obtained using the alignment key positioned on each substrate, and a multi-layer process is carried out.
摘要翻译：提供了一种多级衬底蚀刻的方法。该方法包括以下步骤：在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模，将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，从而防止在台面上出现底面和突出结构中的曲率半径的出现，因此改善了蚀刻质量，使用位于每个衬底上的对准键来获得衬底之间的精确结合，并且进行多层工艺。

88. 发明授权

US07290413B2 Washing machine having transient vibration sensor assembly 有权
标题翻译：具有瞬态振动传感器组件的洗衣机
公开(公告)号：US07290413B2
公开(公告)日：2007-11-06
申请号：US10717965
申请日：2003-11-21
申请人： Yang Hwan No , Jong Seok Kim , Han Ki Cho , Yeon Su Jung , Jung Hoon Kang , Young Hoon Ha , Myung Sik Park
发明人： Yang Hwan No , Jong Seok Kim , Han Ki Cho , Yeon Su Jung , Jung Hoon Kang , Young Hoon Ha , Myung Sik Park
IPC分类号： D06F37/22
CPC分类号： D06F37/203
摘要： A washing machine having a transient vibration sensor assembly is provided. The transient vibration sensor assembly senses transient vibration of a tub to prevent the washing machine from severe shaking and subsequent breakdown. The washing machine includes a cabinet, a tub suspended in the cabinet, a drum rotatably provided in the tub, a motor provided in the cabinet to rotate the drum, a sensor assembly in the cabinet to sense a transient vibration of the tub, and a controller to control the motor, and to stop the motor if the sensor assembly senses that the tub is in a transient vibration state.
摘要翻译：提供具有瞬态振动传感器组件的洗衣机。瞬态振动传感器组件感测桶的瞬态振动，以防止洗衣机发生严重的震动和随后的击穿。洗衣机包括机柜，悬挂在机柜中的桶，可旋转地设置在桶中的滚筒，设置在机壳中以使滚筒旋转的马达，机壳中的传感器组件，用于感测桶的瞬时振动，以及控制器来控制电动机，并且如果传感器组件感测到桶处于瞬态振动状态，则停止电动机。

89. 外观设计

USD528719S1 Drum for a washing machine 失效
标题翻译：滚筒洗衣机
公开(公告)号：USD528719S1
公开(公告)日：2006-09-19
申请号：US29181954
申请日：2003-05-19
申请人： Yang Hwan No , Jung Hoon Kang , Jong Seok Kim , Myung Sik Park , Han Ki Cho , Youn Su Jung , Young Hoon Ha
设计人： Yang Hwan No , Jung Hoon Kang , Jong Seok Kim , Myung Sik Park , Han Ki Cho , Youn Su Jung , Young Hoon Ha

90. 发明授权

US08563076B2 Substrate structure and method of forming the same 有权
公开(公告)号：US08563076B2
公开(公告)日：2013-10-22
申请号：US12222444
申请日：2008-08-08
申请人： Chan Wook Baik , Jong Seok Kim , Sun Il Kim , Young Mok Son
发明人： Chan Wook Baik , Jong Seok Kim , Sun Il Kim , Young Mok Son
IPC分类号： B32B3/10
CPC分类号： C23C14/16 , C23C14/022 , C23C14/5806 , H01L21/30655 , H01L2924/0002 , Y10T428/24917 , H01L2924/00
摘要： Provided are a substrate structure and method of forming the same. The method of forming the substrate structure may include etching a substrate to form an etched portion having a vertical surface, forming a diffusion material layer on the whole substrate or in part of the substrate; annealing the diffusion material layer to form a seed layer diffused downward toward the surface of the etched portion, and forming a metal layer on the seed layer. Accordingly, surface characteristics of the etched portion of the substrate may be enhanced by the seed layer, and therefore, a metal layer with improved adhesion and a uniform thickness may be formed on the vertical surface of the etched portion.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式