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    • 82. 发明申请
    • Surface mountable electret condenser microphone
    • 表面贴装驻极体电容麦克风
    • US20060280320A1
    • 2006-12-14
    • US10566304
    • 2003-08-29
    • Chungdam SongEekjoo ChungHyunho KimSungho Park
    • Chungdam SongEekjoo ChungHyunho KimSungho Park
    • H04R25/00
    • H04R19/016H04R1/06
    • Disclosed is an electret condenser microphone capable of surface mounting which has a structure highly resistant to high temperature. The electret condenser microphone comprises a case, a polar ring, a diaphragm, a spacer, a back-plate, a first base, a second base and a printed circuit board (PCB), wherein the first base surrounds the diaphragm, the spacer and the back-plate, so that the first base prevents characteristics of an electret formed on any one of the diaphragm and the back-plate from being deteriorated in a reflow process for surface mounting. Further, in order to prevent sensitivity of the electret condenser microphone from being lowered due to decrease of an electrical potential value of the electret in the reflow process. High gain IC devices are used. The electret condenser microphone capable of surface mounting can be obtained by, first, using main components made from a high-temperature resistant insulating material, for example, a polymer-, a plastic- or a fluoro resin-based material, second, constructing the first base to surround acoustic based components, third, using a cream solder for high temperature to bond components to the PCB, fourth, using the high gain IC devices, fifth, providing the connecting terminal with gas discharge grooves and protruding the connecting terminal to be higher than a curled surface of the electret condenser microphone.
    • 公开了一种能够表面安装的驻极体电容麦克风,其具有高度耐高温的结构。 驻极体电容麦克风包括壳体,极环,隔膜,间隔件,背板,第一基座,第二基座和印刷电路板(PCB),其中第一基座围绕隔膜,间隔件和 背板,使得第一基座防止形成在隔膜和背板中的任何一个上的驻极体的特性在用于表面安装的回流工艺中劣化。 此外,为了防止驻极体电容麦克风的灵敏度由于回流工艺中驻极体的电位值的降低而降低。 使用高增益IC器件。 能够通过以下方式获得能够进行表面安装的驻极体电容麦克风:首先,使用由耐高温绝缘材料制成的主要组分,例如聚合物,基于塑料或氟树脂的材料,第二,构建 第一,使用高温增益IC器件,第五,使连接端子与气体放电槽相连,并将连接端子突出成为 高于驻极体电容麦克风的卷曲表面。
    • 85. 发明授权
    • Nano/micro-sized diode and method of preparing the same
    • 纳米/微型二极管及其制备方法
    • US08471279B2
    • 2013-06-25
    • US12240156
    • 2008-09-29
    • Jinhwan ParkSungho Park
    • Jinhwan ParkSungho Park
    • H01L33/00
    • H01L51/0587H01L51/0037H01L51/0038
    • A nano/micro-sized diode and a method of preparing the same, the diode including: a first electrode; a second electrode; and a diode layer that is disposed between the first electrode and the second electrode. The diode layer includes a first layer and a second layer. The first layer is disposed on the first electrode and has a first surface that is electrically connected to the first electrode, and an opposing second surface that has a protrusion. The second layer is disposed between the first layer and the second electrode and has a first surface having a recess that corresponds to the protrusion, and an opposing second surface that is electrically connected to the second electrode.
    • 纳米/微尺寸二极管及其制备方法,二极管包括:第一电极; 第二电极; 以及设置在第一电极和第二电极之间的二极管层。 二极管层包括第一层和第二层。 第一层设置在第一电极上,并且具有电连接到第一电极的第一表面和具有突起的相对的第二表面。 第二层设置在第一层和第二电极之间,并且具有第一表面,该第一表面具有对应于突起的凹部,以及与第二电极电连接的相对的第二表面。