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    • 85. 发明授权
    • Fine grain tantalum sputtering target and fabrication process
    • 细粒钽溅射靶和制造工艺
    • US06193821B1
    • 2001-02-27
    • US09353700
    • 1999-07-14
    • Hao Zhang
    • Hao Zhang
    • C22F118
    • C23C14/3414C22F1/18Y10S148/158
    • A process for treating substantially pure tantalum includes plastically deformed a billet, such as by side-forging or side-rolling, to reduce a first dimension of the billet transverse to the centerline, preferably by about 70% to about 85%. The billet is then upset, such as by upset forging or upset rolling, to reduce a second dimension of the billet transverse to the first dimension (for example, a second dimension lying parallel to the centerline), preferably by about 90% to about 99%. In accordance with an especially preferred process, the upsetting of the billet is followed by rolling along a plane normal to the second dimension. It has been found that billets prepared in accordance with the invention have grain sizes no greater than about 25 &mgr;m and predominantly textures relative to their rolling planes, so that targets machined from such billets in such a way that their sputtering surfaces correspond with these rolling planes will have the same predominant textures.
    • 用于处理基本上纯的钽的方法包括例如通过侧锻或侧面轧制来塑性变形坯料,以减少横向于中心线的坯料的第一尺寸,优选地减小约70%至约85%。 然后,坯料例如通过镦锻或镦粗轧制而变形,以减小横向于第一尺寸(例如,平行于中心线的第二尺寸)的坯料的第二尺寸,优选地为约90%至约99 %。 根据特别优选的方法,坯料的镦锻随后沿着垂直于第二尺寸的平面滚动。 已经发现,根据本发明制备的坯料相对于其轧制平面具有不大于约25μm的颗粒尺寸和主要<222>的纹理,使得从这些坯料加工的靶材使得它们的溅射表面对应于 这些滚动平面将具有相同的主要<222>纹理。