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81. 发明申请

US20130249626A1 MULTIPLE POWER MODE AMPLIFIER 审中-公开
标题翻译：多功率模式放大器
公开(公告)号：US20130249626A1
公开(公告)日：2013-09-26
申请号：US13992317
申请日：2011-11-09
申请人： Naoko Matsunaga , Kenichi Horiguchi , Hiroshi Otsuka , Masatoshi Nakayama , Kazuhiro Iyomasa , Kazuya Yamamoto , Akira Inoue
发明人： Naoko Matsunaga , Kenichi Horiguchi , Hiroshi Otsuka , Masatoshi Nakayama , Kazuhiro Iyomasa , Kazuya Yamamoto , Akira Inoue
IPC分类号： H03F1/02
CPC分类号： H03F1/0277 , H03F1/34 , H03F1/56 , H03F3/45475 , H03F3/72 , H03F2200/222 , H03F2200/387 , H03F2200/411 , H03F2203/45526 , H03F2203/45528 , H03F2203/45534 , H03F2203/45536 , H03F2203/7215 , H03F2203/7221 , H03F2203/7236 , H03G1/0088 , H03G3/3042
摘要： A multiple power mode amplifier includes: N amplifiers connected in series via switches; and a control circuit for controlling the N amplifiers in accordance with the output modes. P amplifiers out of the N amplifiers constitute a driver amplifier, and constitute a negative feedback amplifier including a feedback circuit for negatively feeding back its own output signal to its own input side. N−P amplifiers constitute a final stage amplifier connected in series to the negative feedback amplifier in a disconnectable manner. The control circuit is configured to: in a first output mode, disconnect the final stage amplifier from the negative feedback amplifier, and disable the feedback circuit; and in a second output mode, connect the final stage amplifier in series to the negative feedback amplifier, and enable the feedback circuit.
摘要翻译：多功率模式放大器包括：通过开关串联连接的N个放大器; 以及根据输出模式控制N个放大器的控制电路。 N个放大器中的P放大器构成驱动器放大器，并构成负反馈放大器，其包括用于将其自身的输出信号负反馈给其自身输入侧的反馈电路。 N-P放大器构成以可断开方式与负反馈放大器串联连接的最后级放大器。控制电路被配置为：在第一输出模式下，将最终级放大器与负反馈放大器断开，并且禁用反馈电路; 并且在第二输出模式中，将最后级放大器串联连接到负反馈放大器，并使能反馈电路。

82. 发明申请

US20130126901A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：半导体发光元件
公开(公告)号：US20130126901A1
公开(公告)日：2013-05-23
申请号：US13813777
申请日：2011-08-05
申请人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
发明人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m-plane nitride semiconductor layer and which is interposed between the n- and p-type nitride semiconductor layers; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run in a direction that defines either an angle of 5 degrees to 80 degrees or an angle of −80 degrees to −5 degrees with respect to the a-axis direction of the m-plane nitride semiconductor layer.
摘要翻译：根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型和p型氮化物半导体层之间的有源层区22。与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有多个突起，该多个突起在限定5度至80度的角度或-80度至-5度的角度的方向上延伸，相对于相对于m面氮化物半导体层的a轴方向。

83. 发明申请

US20120247177A1 METHOD FOR MEASURING MECHANICAL POWER DISSIPATION IN A VIBRATORY SYSTEM 有权
标题翻译：用于测量振动系统中的机械功率消耗的方法
公开(公告)号：US20120247177A1
公开(公告)日：2012-10-04
申请号：US13076943
申请日：2011-03-31
申请人： Akira Inoue
发明人： Akira Inoue
IPC分类号： G01M17/04
CPC分类号： G01M15/12 , G01H3/10 , G01M7/00
摘要： A method for determining mechanical power dissipation in a vibratory system, assuming the system is linear time-invariant and steady-state. The method includes the steps of identifying connection points between the vibratory system and components outside the vibratory system. The acceleration is measured at each connection point in a windowed time domain and the force at each connection point is also determined for the windowed time domain. The time domain values are converted into the frequency domain values by the fast Fourier transform, and the frequency domain acceleration values are converted to velocity values. The power dissipation of the vibratory system then equals the summation of one half of the power flow into the vibratory system. Here, each power flow is one half of the real part of the product of complex-conjugated velocity times force at the connection point in the frequency domain for each time window.
摘要翻译：一种用于确定振动系统中机械功率耗散的方法，假设系统是线性时不变和稳态。该方法包括识别振动系统和振动系统之外的部件之间的连接点的步骤。加速度是在窗口化的时域中的每个连接点处测量的，并且每个连接点的力也是为窗口时域确定的。通过快速傅里叶变换将时域值转换为频域值，将频域加速度值转换为速度值。振动系统的功率损耗等于进入振动系统的功率流的一半的总和。这里，每个功率流是在每个时间窗口的频域中的连接点处的复共轭速度乘以力的乘积的实部的一半。

84. 发明授权

US08247844B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08247844B2
公开(公告)日：2012-08-21
申请号：US12574995
申请日：2009-10-07
申请人： Toshiyuki Oishi , Yoshitsugu Yamamoto , Hiroshi Otsuka , Koji Yamanaka , Akira Inoue
发明人： Toshiyuki Oishi , Yoshitsugu Yamamoto , Hiroshi Otsuka , Koji Yamanaka , Akira Inoue
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/7787 , H01L29/0688 , H01L29/155 , H01L29/2003 , H01L29/207 , H01L29/66462
摘要： An isolation layer for suppressing a leakage current is provided at least between a channel layer and a buffer layer formed under the channel layer in the buffer layer.
摘要翻译：至少在沟道层和形成在缓冲层中的沟道层下方的缓冲层之间提供用于抑制泄漏电流的隔离层。

85. 发明授权

US08149060B2 Low distortion amplifier and Doherty amplifier using low distortion amplifier 有权
标题翻译：低失真放大器和Doherty放大器采用低失真放大器
公开(公告)号：US08149060B2
公开(公告)日：2012-04-03
申请号：US12933509
申请日：2008-03-25
申请人： Kazuhisa Yamauchi , Hifumi Noto , Akira Inoue , Tomokazu Hamada , Masatoshi Nakayama , Kenichi Horiguchi
发明人： Kazuhisa Yamauchi , Hifumi Noto , Akira Inoue , Tomokazu Hamada , Masatoshi Nakayama , Kenichi Horiguchi
IPC分类号： H03F3/68
CPC分类号： H03F3/195 , H03F1/0288 , H03F1/3205 , H03F1/565 , H03F3/601 , H03F2200/387 , H03F2200/451
摘要： Provided is a low distortion amplifier which can satisfy both securement of a setting space in a vicinity of a transistor and low impedance. The low distortion amplifier includes a short stub having a leading end thereof short-circuited with a high-frequency short-circuit element and a low-frequency short-circuit element, in which the short stub is connected to a vicinity of at least one of a gate terminal and a drain terminal of the transistor, and includes a plurality of branched lines, the plurality of branched lines each having a leading end thereof short-circuited with the high-frequency short-circuit element and the low-frequency short-circuit element.
摘要翻译：提供了能够满足晶体管附近的设定空间的固定和低阻抗的低失真放大器。低失真放大器包括其短端与高频短路元件和低频短路元件短路的短路短路短路短路元件，短路短路元件连接到至少一个晶体管的栅极端子和漏极端子，并且包括多条分支线路，所述多条分支线路的前端与高频短路元件和低频短路元件短路元件。

86. 发明申请

US20120070758A1 FUEL GAS SUPPLY DEVICE OF FUEL CELL SYSTEM 有权
标题翻译：燃油电池系统的燃油供应装置
公开(公告)号：US20120070758A1
公开(公告)日：2012-03-22
申请号：US13375348
申请日：2010-06-22
申请人： Masato Odashima , Keisuke Satou , Takatada Usami , Kentaro Kono , Akinobu Moriyama , Masahiro Haruyama , Akira Inoue
发明人： Masato Odashima , Keisuke Satou , Takatada Usami , Kentaro Kono , Akinobu Moriyama , Masahiro Haruyama , Akira Inoue
IPC分类号： H01M8/04
CPC分类号： B60L11/1887 , H01M8/04089 , H01M8/04201 , H01M8/0438 , H01M8/04388 , H01M8/04753 , H01M8/04992 , H01M2250/20 , Y02E60/50 , Y02T90/32 , Y02T90/34
摘要： A fuel gas supply device for supplying fuel gas to a fuel cell stack includes a control valve provided in a fuel gas path connecting a fuel tank and the fuel cell stack, an upstream-side pressure sensor and a downstream-side pressure sensor for detecting an upstream-side pressure and a downstream-side pressure, and a programmable controller. The programmable controller calculates a required opening based on a target fuel gas pressure and the downstream-side pressure and calculates an opening time and a closing time based on the required opening and the upstream-side pressure, or calculates an opening time and a closing time based on the target fuel gas pressure and the downstream-side pressure and calculates a required opening based on the opening time and the upstream-side pressure, and controls the control valve using the calculated required opening, opening time and closing time.
摘要翻译：用于向燃料电池堆供应燃料气体的燃料气体供给装置包括设置在连接燃料箱和燃料电池堆的燃料气体路径中的控制阀，上游侧压力传感器和下游侧压力传感器，上游侧压力和下游侧压力，以及可编程控制器。可编程控制器基于目标燃料气体压力和下游侧压力计算所需的开度，并且基于所需的开度和上游侧压力计算打开时间和关闭时间，或者计算打开时间和关闭时间基于目标燃料气体压力和下游侧压力，并且基于打开时间和上游侧压力计算所需的开度，并且使用所计算的所需开度，打开时间和关闭时间来控制控制阀。

87. 发明申请

US20120021549A1 METHOD FOR GROWING CRYSTALS OF NITRIDE SEMICONDUCTOR, AND PROCESS FOR MANUFACTURE OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：氮化物半导体晶体生长方法及半导体器件制造工艺
公开(公告)号：US20120021549A1
公开(公告)日：2012-01-26
申请号：US13260434
申请日：2010-03-24
申请人： Masaki Fujikane , Akira Inoue , Ryou Kato , Toshiya Yokogawa
发明人： Masaki Fujikane , Akira Inoue , Ryou Kato , Toshiya Yokogawa
IPC分类号： H01L33/32 , H01L21/20
CPC分类号： H01L33/0075 , C30B25/20 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L33/16
摘要： A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including a −r-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber.
摘要翻译：氮化物半导体层形成方法包括以下步骤：（S1）将基板放置在反应室中，所述基板至少在上表面包括-r面氮化物半导体晶体; （S2）通过加热放置在反应室中的基板来增加基板的温度; 和（S3）在衬底上生长氮化物半导体层。在升温工序（S2）中，将氮源气体和III族元素源气体供给到反应室内。

88. 发明授权

US08098435B2 Optical combiner and image projector using the optical combiner 有权
标题翻译：光学组合器和图像投影机使用光学组合器
公开(公告)号：US08098435B2
公开(公告)日：2012-01-17
申请号：US12756008
申请日：2010-04-07
申请人： Yoshitomo Iyoda , Akira Inoue , Tomomi Sano , Michiko Takushima , Takayuki Shimazu
发明人： Yoshitomo Iyoda , Akira Inoue , Tomomi Sano , Michiko Takushima , Takayuki Shimazu
IPC分类号： G02B27/10 , G02B27/42 , G02B3/08
CPC分类号： G02B27/1086 , G02B26/10 , G02B27/104
摘要： An optical combiner in which the number of parts used is lessened is made of a resin. The optical component comprises a first surface, a diffraction grating, and a second surface. The first surface is a surface providing first, second, and third lenses. The diffraction grating diffracts to a common optical path leading to the second surface light of the first wavelength incident on the first lens, light of the second wavelength incident on the second lens, and light of the third wavelength incident on the third lens. The second surface emits light incident thereon through the common optical path. The optical path from the first surface to the diffraction grating and the common optical path are constituted of the resin.
摘要翻译：其中使用的部件数量减少的光学组合器由树脂制成。光学部件包括第一表面，衍射光栅和第二表面。第一表面是提供第一，第二和第三透镜的表面。衍射光栅衍射到通向入射到第一透镜上的第一波长的第二表面光，入射在第二透镜上的第二波长的光和入射在第三透镜上的第三波长的光的公共光路。第二表面通过公共光路发射入射到其上的光。从第一表面到衍射光栅和公共光路的光路由树脂构成。

89. 发明申请

US20120006914A1 HIGH PRESSURE FUEL PIPE CONSTRUCTION FOR AN INTERNAL COMBUSTION ENGINE 失效
标题翻译：用于内燃机的高压燃油管道结构
公开(公告)号：US20120006914A1
公开(公告)日：2012-01-12
申请号：US13237132
申请日：2011-09-20
申请人： Harsha Badarinarayan , Akira Inoue , Takashi Yoshizawa , Atsushi Hohkita , Hiroaki Saeki , Hiroshi Ono , Masahiro Soma , William Harvey , Steven J. Miller , Su-Wei Sung
发明人： Harsha Badarinarayan , Akira Inoue , Takashi Yoshizawa , Atsushi Hohkita , Hiroaki Saeki , Hiroshi Ono , Masahiro Soma , William Harvey , Steven J. Miller , Su-Wei Sung
IPC分类号： F02M61/00
CPC分类号： F16L27/047 , F02M37/0017 , F02M55/005 , F02M55/02 , F02M55/04 , F02M2200/306 , F02M2200/8084 , F02M2200/9015
摘要： A high pressure fuel pipe construction for an internal combustion engine, such as a direct injection engine. A conduit for the fuel is open at each end and a ball having a throughbore is slidably positioned over one end of the conduit. A reinforcing sleeve is positioned inside the end of the conduit so that the sleeve extends entirely through the ball. The sleeve, ball and the end of the conduit are then brazed together to attach the ball and conduit together. A double chamfer is provided at one end of the ball throughbore to facilitate inspection of the brazing quality. Additionally, a loop is formed in the conduit and a dampener is attached to the loop.
摘要翻译：用于内燃机的高压燃料管构造，例如直喷式发动机。用于燃料的导管在每个端部是开放的，并且具有通孔的球可滑动地定位在导管的一端上。加强套管定位在导管的端部内部，使得套筒完全延伸穿过球。然后将套筒，球和导管的端部钎焊在一起，将球和导管连接在一起。在球透孔的一端设有双倒角，以便检查钎焊质量。另外，在导管中形成环，并且阻尼器附接到环路。

90. 发明申请

US20120001223A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF 有权
标题翻译：氮化物半导体发光元件及其生产工艺
公开(公告)号：US20120001223A1
公开(公告)日：2012-01-05
申请号：US13256061
申请日：2010-12-27
申请人： Akira Inoue , Junko Iwanaga , Ryou Kato , Masaki Fujikane , Toshiya Yokogawa
发明人： Akira Inoue , Junko Iwanaga , Ryou Kato , Masaki Fujikane , Toshiya Yokogawa
IPC分类号： H01L33/32
CPC分类号： H01L33/14 , H01L33/0075 , H01L33/32 , H01L2224/13 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A nitride-based semiconductor light-emitting device 31 includes: an n-type GaN substrate 1 which has an m-plane principal surface; a current diffusing layer 7 provided on the n-type GaN substrate 1; an n-type nitride semiconductor layer 2 provided on the current diffusing layer 7; an active layer 3 provided on the n-type nitride semiconductor layer 2; a p-type nitride semiconductor layer 4 provided on the active layer 3; a p-electrode 5 which is in contact with the p-type nitride semiconductor layer 4; and an n-electrode 6 which is in contact with the n-type GaN substrate 1 or the n-type nitride semiconductor layer 2. The donor impurity concentration of the n-type nitride semiconductor layer 2 is not more than 5×1018 cm−3, and the donor impurity concentration of the current diffusing layer 7 is ten or more times the donor impurity concentration of the n-type nitride semiconductor layer 2.
摘要翻译：氮化物系半导体发光元件31具备：具有m面主面的n型GaN衬底1，设置在n型GaN衬底1上的电流扩散层7; 设置在电流扩散层7上的n型氮化物半导体层2; 设置在n型氮化物半导体层2上的有源层3; 设置在有源层3上的p型氮化物半导体层4; 与p型氮化物半导体层4接触的p电极5; 以及与n型GaN衬底1或n型氮化物半导体层2接触的n电极6.n型氮化物半导体层2的施主杂质浓度不大于5×1018cm- 3，电流扩散层7的施主杂质浓度为n型氮化物半导体层2的施主杂质浓度的十倍以上。

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