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81. 发明专利

DE69422230T2 未知
公开(公告)号：DE69422230T2
公开(公告)日：2000-08-24
申请号：DE69422230
申请日：1994-06-24
申请人： SUMITOMO ELECTRIC INDUSTRIES , TOHOKU ELECTRIC POWER CO , MATSUSHITA ELECTRIC IND CO LTD , INT SUPERCONDUCTIVITY TECH
发明人： ITOH MAKOTO , YAMAMOTO AYAKO , ISAWA KAZUYUKI , ADACHI SEIJI , YAMAUCHI HISAO , TANAKA SHOJI
IPC分类号： C01G1/00 , C01G13/00 , C04B35/00 , C04B35/45 , H01B12/00 , H01B13/00 , H01L39/12 , H01L39/24

82. 发明专利

DE69423082T2 未知
公开(公告)号：DE69423082T2
公开(公告)日：2000-06-08
申请号：DE69423082
申请日：1994-12-20
申请人： INT SUPERCONDUCTIVITY TECH , RAILWAY TECHNICAL RES INST , SHIKOKU ELEC POWER , TOSOH CORP
发明人： MARAKAMI MASATO , YOO SANG-IM , SAKAI NAOMICHI , TAKAICHI HIROSHI , HIGUCHI TAKAMITSU , TANAKA SHOJI
IPC分类号： H01L39/12
摘要： A high critical temperature and high critical current density superconductor is disclosed which contains a metal oxide expressed by the following formula (I): (R 1-x, Bax)Ba2Cu3Od (I) wherein R stands for at least one element selected from the group consisting of La, Nd, Sm, Eu and Gd, x is a number greater than 0 but not greater than 0.5 and d is a number between 6.2 and 7.2. Fine phases of RE211, RE422 and/or a metal oxide expressed by the formula (R 1-z, Baz)(Ba1-y, R y)2Cu3Op (R = La, Nd, Sm, Eu or Gd) may be dispersed in a matrix of the matrix phase of the formula (I). The above superconductor may be obtained by cooling a melt having a temperature of 1,000 DEG -1,300 DEG C and containing R , Ba, Cu and O at a cooling rate of 5 DEG C/hour or less under a partial pressure of oxygen of between 0.00001 and 0.05 atm, followed by annealing at 250 DEG -600 DEG C in an oxygen atmosphere.

83. 发明专利

DE69423082D1 未知
公开(公告)号：DE69423082D1
公开(公告)日：2000-03-30
申请号：DE69423082
申请日：1994-12-20
申请人： INT SUPERCONDUCTIVITY TECH , RAILWAY TECHNICAL RES INST , SHIKOKU ELEC POWER , TOSOH CORP
发明人： MARAKAMI MASATO , YOO SANG-IM , SAKAI NAOMICHI , TAKAICHI HIROSHI , HIGUCHI TAKAMITSU , TANAKA SHOJI
IPC分类号： H01L39/12
摘要： A high critical temperature and high critical current density superconductor is disclosed which contains a metal oxide expressed by the following formula (I): (R 1-x, Bax)Ba2Cu3Od (I) wherein R stands for at least one element selected from the group consisting of La, Nd, Sm, Eu and Gd, x is a number greater than 0 but not greater than 0.5 and d is a number between 6.2 and 7.2. Fine phases of RE211, RE422 and/or a metal oxide expressed by the formula (R 1-z, Baz)(Ba1-y, R y)2Cu3Op (R = La, Nd, Sm, Eu or Gd) may be dispersed in a matrix of the matrix phase of the formula (I). The above superconductor may be obtained by cooling a melt having a temperature of 1,000 DEG -1,300 DEG C and containing R , Ba, Cu and O at a cooling rate of 5 DEG C/hour or less under a partial pressure of oxygen of between 0.00001 and 0.05 atm, followed by annealing at 250 DEG -600 DEG C in an oxygen atmosphere.

84. 发明专利

DE69422230D1 未知
公开(公告)号：DE69422230D1
公开(公告)日：2000-01-27
申请号：DE69422230
申请日：1994-06-24
申请人： SUMITOMO ELECTRIC INDUSTRIES , TOHOKU ELECTRIC POWER CO , MATSUSHITA ELECTRIC IND CO LTD , INT SUPERCONDUCTIVITY TECH
发明人： ITOH MAKOTO , YAMAMOTO AYAKO , ISAWA KAZUYUKI , ADACHI SEIJI , YAMAUCHI HISAO , TANAKA SHOJI
IPC分类号： C01G1/00 , C01G13/00 , C04B35/00 , C04B35/45 , H01B12/00 , H01B13/00 , H01L39/12 , H01L39/24

85. 发明专利

CA2134008C ARRAY ANTENNA AND PRODUCTION PROCESS THEREFOR 未知
公开(公告)号：CA2134008C
公开(公告)日：1999-04-13
申请号：CA2134008
申请日：1994-10-21
申请人： INT SUPERCONDUCTIVITY TECH , DU PONT , NEC CORP
发明人： SUZUKI KATSUMI , ENOMOTO YOUICHI , TANAKA SHOJI , YAMAGUCHI KEIICHI , MURPHY ARTHUR T
IPC分类号： H01L39/00 , H01L39/02 , H01P5/12 , H01P11/00 , H01Q1/24 , H01Q1/36 , H01Q13/08 , H01Q21/06 , H01Q23/00 , H03D9/06 , H04B1/26 , H01Q21/00
摘要： An antenna array is adapted to handle an increased power of high-frequency signal. The antenna array includes a substrate, a plurality of un it wiring patterns, each consisting of a superconductor film wiring pattern formed on a pl ane extending in common with a major plane of the substrate and a non-linear element formed within each unit wiring pattern. The non-linear element is connected at o ne end to an antenna pattern for radiating and absorbing a high-frequency electromagnetic field and is connected at the other end to a signal transmission path pattern. Each of the unit wiring patterns is connected to a signal detection mea ns through a plurality of signal transmission path patterns.

86. 发明专利

DE69502911T2 未知
公开(公告)号：DE69502911T2
公开(公告)日：1998-10-22
申请号：DE69502911
申请日：1995-11-07
申请人： INT SUPERCONDUCTIVITY TECH
发明人： BADAYE MASSOUD , MORISHITA TADATAKA , ENOMOTO YOUICHI , TANAKA SHOJI
IPC分类号： C01G1/00 , C01G3/00 , C01G3/02 , C23C14/08 , C30B23/08 , C30B29/22 , H01L39/02 , H01L39/12 , H01L39/24
摘要： A superconducting film is disclosed which has the following composition: (Nd, Ba)3Cu3O7-d where d is a number greater than 0 but smaller than 0.5. The superconducting film has the same crystal structure as that of YBa2Cu3O7 except that part of the Nd sites and/or part of the Ba sites are occupied by Ba and Nd atoms, respectively.

87. 发明专利

DE69502911D1 未知
公开(公告)号：DE69502911D1
公开(公告)日：1998-07-16
申请号：DE69502911
申请日：1995-11-07
申请人： INT SUPERCONDUCTIVITY TECH
发明人： BADAYE MASSOUD , MORISHITA TADATAKA , ENOMOTO YOUICHI , TANAKA SHOJI
IPC分类号： C01G1/00 , C01G3/00 , C01G3/02 , C23C14/08 , C30B23/08 , C30B29/22 , H01L39/02 , H01L39/12 , H01L39/24
摘要： A superconducting film is disclosed which has the following composition: (Nd, Ba)3Cu3O7-d where d is a number greater than 0 but smaller than 0.5. The superconducting film has the same crystal structure as that of YBa2Cu3O7 except that part of the Nd sites and/or part of the Ba sites are occupied by Ba and Nd atoms, respectively.

88. 发明专利

DE69312582D1 未知
公开(公告)号：DE69312582D1
公开(公告)日：1997-09-04
申请号：DE69312582
申请日：1993-05-24
申请人： INT SUPERCONDUCTIVITY TECH , ASAHI GLASS CO LTD , ISHIKAWAJIMA HARIMA HEAVY IND , SUMITOMO METAL IND , KYUSHU ELECTRIC POWER , RAILWAY TECHNICAL RES INST
发明人： YAMADA YASUJI , IZUMI TERUO , OHTSU KANSHI , NAKAMURA YUICHI , ISHIGE KENGO , SHIOHARA YUH , TAGAMI MINORU , TANAKA SHOJI
IPC分类号： C30B15/02 , C01G1/00 , C01G3/00 , C30B15/00 , C30B15/36 , C30B29/16 , C30B29/22 , H01B13/00 , H01L39/24
摘要： In a method of preparing a crystal of a metal oxide, the growth of said crystal is performed in a liquid phase having a composition which is different from the metal oxide and which comprises components constituting the metal oxide. The liquid phase contains a solid phase, at a position different from the position at which the crystal of the metal oxide is to grow, and having a composition different from that of the metal oxide and which supplys components constituting the metal oxide to the liquid phase.

89. 发明专利

DE69307467T2 未知
公开(公告)号：DE69307467T2
公开(公告)日：1997-05-15
申请号：DE69307467
申请日：1993-11-09
申请人： INT SUPERCONDUCTIVITY TECH , NEC CORP
发明人： NEUMANN CHRISTIAN , SUZUKI KATSUMI , ENOMOTO YOUICHI , TANAKA SHOJI
IPC分类号： H01L39/22 , H01L39/24
摘要： A Josephson junction is disclosed which includes a substrate of a single crystal having a substantially flat surface, a wiring pattern of an oxide superconductor formed on the flat surface of the substrate, and an altered region formed having a width of 300 nm or less and formed in the wiring pattern to intersect the wiring pattern, the crystal orientations of the wiring pattern on both sides of the altered region being equal to each other. The Josephson junction may be prepared by a process including the steps of: (a) coating a surface of a substrate of a single crystal with a normal metal to form a protecting layer over the surface of the substrate; (b) irradiating a predetermined portion of the protecting layer with a focused ion beam so that an irradiated portion is formed in the substrate; (c) removing the protecting layer from the substrate; and (d) forming a wiring pattern of an oxide superconductor on the surface of the substrate from which the protecting layer has been removed such that the wiring pattern crosses the irradiated portion of the substrate, thereby forming an altered portion in the wiring pattern at a position above the irradiated portion.

90. 发明专利

DE69307467D1 未知
公开(公告)号：DE69307467D1
公开(公告)日：1997-02-27
申请号：DE69307467
申请日：1993-11-09
申请人： INT SUPERCONDUCTIVITY TECH , NEC CORP
发明人： NEUMANN CHRISTIAN , SUZUKI KATSUMI , ENOMOTO YOUICHI , TANAKA SHOJI
IPC分类号： H01L39/22 , H01L39/24
摘要： A Josephson junction is disclosed which includes a substrate of a single crystal having a substantially flat surface, a wiring pattern of an oxide superconductor formed on the flat surface of the substrate, and an altered region formed having a width of 300 nm or less and formed in the wiring pattern to intersect the wiring pattern, the crystal orientations of the wiring pattern on both sides of the altered region being equal to each other. The Josephson junction may be prepared by a process including the steps of: (a) coating a surface of a substrate of a single crystal with a normal metal to form a protecting layer over the surface of the substrate; (b) irradiating a predetermined portion of the protecting layer with a focused ion beam so that an irradiated portion is formed in the substrate; (c) removing the protecting layer from the substrate; and (d) forming a wiring pattern of an oxide superconductor on the surface of the substrate from which the protecting layer has been removed such that the wiring pattern crosses the irradiated portion of the substrate, thereby forming an altered portion in the wiring pattern at a position above the irradiated portion.

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