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81. 发明授权

US08138029B2 Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) 失效
标题翻译：具有半导体绝缘体（SOI）金属氧化物半导体场效应晶体管（MOSFET）的不对称结或反向晕轮廓的结构和方法
公开(公告)号：US08138029B2
公开(公告)日：2012-03-20
申请号：US12686402
申请日：2010-01-13
申请人： Huilong Zhu , Zhijiong Luo , Qingqing Liang , Haizhou Yin
发明人： Huilong Zhu , Zhijiong Luo , Qingqing Liang , Haizhou Yin
IPC分类号： H01L21/00
CPC分类号： H01L27/1207 , H01L21/76251 , H01L21/8221 , H01L27/0688 , H01L29/66545
摘要： A device and method is provided that in one embodiment provides a first semiconductor device including a first gate structure on a first channel region, in which a first source region and a first drain region are present on opposing sides of the first channel region, in which a metal nitride spacer is present on only one side of the first channel region. The device further includes a second semiconductor device including a second gate structure on a second channel region, in which a second source region and a second drain region are present on opposing sides of the second channel region. Interconnects may be present providing electrical communication between the first semiconductor device and the second semiconductor device, in which at least one of the first semiconductor device and the second semiconductor device is inverted. A structure having a reverse halo dopant profile is also provided.
摘要翻译：提供了一种装置和方法，在一个实施例中提供了第一半导体器件，其包括在第一沟道区上的第一栅极结构，其中第一源区和第一漏区存在于第一沟道区的相对侧上，其中金属氮化物间隔物仅存在于第一沟道区的一侧。该器件还包括在第二沟道区上包括第二栅极结构的第二半导体器件，其中第二源区和第二漏区存在于第二沟道区的相对侧上。可以存在互连件，其提供第一半导体器件和第二半导体器件之间的电连通，其中第一半导体器件和第二半导体器件中的至少一个被反转。还提供了具有反向卤素掺杂剂分布的结构。

82. 发明授权

US08110465B2 Field effect transistor having an asymmetric gate electrode 有权
标题翻译：具有不对称栅电极的场效应晶体管
公开(公告)号：US08110465B2
公开(公告)日：2012-02-07
申请号：US11830316
申请日：2007-07-30
申请人： Huilong Zhu , Qingqing Liang
发明人： Huilong Zhu , Qingqing Liang
IPC分类号： H01L21/336
CPC分类号： H01L29/42376 , H01L21/28105 , H01L21/28114 , H01L21/28132 , H01L29/4983 , H01L29/512 , H01L29/517 , H01L29/66484 , H01L29/665 , H01L29/66613 , H01L29/7831
摘要： The gate electrode of a metal oxide semiconductor field effect transistor (MOSFET) comprises a source side gate electrode and a drain side gate electrode that abut each other near the middle of the channel. In one embodiment, the source side gate electrode comprises a silicon oxide based gate dielectric and the drain side gate electrode comprises a high-k gate dielectric. The source side gate electrode provides high carrier mobility, while the drain side gate electrode provides good short channel effect and reduced gate leakage. In another embodiment, the source gate electrode and drain gate electrode comprises different high-k gate dielectric stacks and different gate conductor materials, wherein the source side gate electrode has a first work function a quarter band gap away from a band gap edge and the drain side gate electrode has a second work function near the band gap edge.
摘要翻译：金属氧化物半导体场效应晶体管（MOSFET）的栅极包括源极侧栅极和漏极侧栅电极，在栅极中间附近彼此邻接。在一个实施例中，源极侧栅极包括基于氧化硅的栅极电介质，漏极侧栅极包括高k栅极电介质。源极栅电极提供高载流子迁移率，而漏极侧栅电极提供良好的短沟道效应和减小的栅极泄漏。在另一个实施例中，源极栅极和漏极栅电极包括不同的高k栅极电介质堆叠和不同的栅极导体材料，其中源极侧栅电极具有远离带隙边缘的四分之一带隙的第一功函数和漏极侧栅电极在带隙边缘附近具有第二功函数。

83. 发明申请

US20120025319A1 STRUCTURE AND METHOD FOR MAKING METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET) WITH ISOLATION LAST PROCESS 失效
标题翻译：用于制造具有隔离最近工艺的金属半导体场效应晶体管（MOSFET）的结构和方法
公开(公告)号：US20120025319A1
公开(公告)日：2012-02-02
申请号：US12844478
申请日：2010-07-27
申请人： Huilong Zhu , Qingqing Liang , Zhijiong Luo , Haizhou Yin
发明人： Huilong Zhu , Qingqing Liang , Zhijiong Luo , Haizhou Yin
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/84 , H01L21/76224 , H01L21/76898 , H01L21/823481 , H01L27/1203
摘要： In one embodiment, a method of providing a semiconductor device is provided, in which instead of forming isolation regions before the formation of the semiconductor devices, the isolation regions are formed after the semiconductor devices. In one embodiment, the method includes forming a semiconductor device on a semiconductor substrate. A placeholder dielectric is formed on a portion of a first surface of the substrate adjacent to the semiconductor device. A trench is etched into the substrate from a second surface of the substrate that is opposite the first surface of the substrate, wherein the trench terminates on the placeholder dielectric. The trench is filled with a dielectric material.
摘要翻译：在一个实施例中，提供了提供半导体器件的方法，其中代替在形成半导体器件之前形成隔离区域，在半导体器件之后形成隔离区域。在一个实施例中，该方法包括在半导体衬底上形成半导体器件。在与半导体器件相邻的衬底的第一表面的一部分上形成占位电介质。沟槽从衬底的与衬底的第一表面相对的第二表面蚀刻到衬底中，其中沟槽终止在占位符电介质上。沟槽填充有电介质材料。

84. 发明申请

US20110169082A1 METHOD FOR FORMING RETROGRADED WELL FOR MOSFET 有权
标题翻译：用于形成MOSFET的退火方法
公开(公告)号：US20110169082A1
公开(公告)日：2011-07-14
申请号：US12687287
申请日：2010-01-14
申请人： Huilong Zhu , Zhijiong Luo , Qingqing Liang , Haizhou Yin
发明人： Huilong Zhu , Zhijiong Luo , Qingqing Liang , Haizhou Yin
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L21/187 , H01L21/6835 , H01L21/84 , H01L27/12 , H01L29/1083 , H01L2221/6835 , H01L2221/68368
摘要： A method of forming an electrical device is provided that includes forming at least one semiconductor device on a first semiconductor layer of the SOI substrate. A handling structure is formed contacting the at least one semiconductor device and the first semiconductor layer. A second semiconductor layer and at least a portion of the dielectric layer of the SOI substrate are removed to provide a substantially exposed surface of the first semiconductor layer. A retrograded well may be formed by implanting dopant through the substantially exposed surface of the first semiconductor layer into a first thickness of the semiconductor layer that extends from the substantially exposed surface of the semiconductor layer, wherein a remaining thickness of the semiconductor layer is substantially free of the retrograded well dopant. The retrograded well may be laser annealed.
摘要翻译：提供一种形成电气装置的方法，包括在SOI衬底的第一半导体层上形成至少一个半导体器件。形成接触至少一个半导体器件和第一半导体层的处理结构。去除第二半导体层和SOI衬底的电介质层的至少一部分以提供第一半导体层的基本暴露的表面。可以通过将掺杂剂通过第一半导体层的基本上暴露的表面注入从半导体层的基本暴露的表面延伸的半导体层的第一厚度来形成退化的阱，其中半导体层的剩余厚度基本上不含的回归井掺杂剂。退火井可以进行激光退火。

85. 发明申请

US20110059587A1 DEVICE HAVING SELF-ALIGNED DOUBLE GATE FORMED BY BACKSIDE ENGINEERING, AND DEVICE HAVING SUPER-STEEP RETROGRADED ISLAND 有权
标题翻译：具有由背面工程形成的自对准双门的装置，以及具有超级退化岛的装置
公开(公告)号：US20110059587A1
公开(公告)日：2011-03-10
申请号：US12556604
申请日：2009-09-10
申请人： Zhijiong Luo , Qingqing Liang , Haizhou Yin , Huilong Zhu
发明人： Zhijiong Luo , Qingqing Liang , Haizhou Yin , Huilong Zhu
IPC分类号： H01L21/336
CPC分类号： H01L29/7833 , H01L29/1083 , H01L29/165 , H01L29/66484 , H01L29/6659 , H01L29/66636 , H01L29/66742 , H01L29/7831 , H01L29/78648
摘要： A method of forming a dual gate semiconductor device is provided that includes providing a substrate having a first semiconductor layer and a second semiconductor layer, in which a first gate structure is formed on the second semiconductor layer. The second semiconductor layer and the first semiconductor layer are etched to expose the substrate using the first gate structure as an etch mask. A remaining portion of the first semiconductor layer is present underlying the first gate structure having edges aligned to the edges of the first gate structure. An epitaxial semiconductor material is formed on exposed portions of the substrate. The substrate and the remaining portion of the first semiconductor layer are removed to provide a recess having edges aligned to the edges of the first gate structure, and a second gate structure is formed in the recess. A method of forming a retrograded island is also provided.
摘要翻译：提供一种形成双栅极半导体器件的方法，其包括提供具有第一半导体层和第二半导体层的衬底，其中在第二半导体层上形成第一栅极结构。蚀刻第二半导体层和第一半导体层以使用第一栅极结构作为蚀刻掩模来露出衬底。第一半导体层的剩余部分位于具有与第一栅极结构的边缘对准的边缘的第一栅极结构下方。在衬底的暴露部分上形成外延半导体材料。去除衬底和第一半导体层的剩余部分以提供具有与第一栅极结构的边缘对准的边缘的凹部，并且在凹部中形成第二栅极结构。还提供了形成退火岛的方法。

86. 发明申请

US20090032889A1 FIELD EFFECT TRANSISTOR HAVING AN ASYMMETRIC GATE ELECTRODE 有权
标题翻译：具有非对称栅极电极的场效应晶体管
公开(公告)号：US20090032889A1
公开(公告)日：2009-02-05
申请号：US11830316
申请日：2007-07-30
申请人： Huilong Zhu , Qingqing Liang
发明人： Huilong Zhu , Qingqing Liang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/42376 , H01L21/28105 , H01L21/28114 , H01L21/28132 , H01L29/4983 , H01L29/512 , H01L29/517 , H01L29/66484 , H01L29/665 , H01L29/66613 , H01L29/7831
摘要： The gate electrode of a metal oxide semiconductor field effect transistor (MOSFET) comprises a source side gate electrode and a drain side gate electrode that abut each other near the middle of the channel. In one embodiment, the source side gate electrode comprises a silicon oxide based gate dielectric and the drain side gate electrode comprises a high-k gate dielectric. The source side gate electrode provides high carrier mobility, while the drain side gate electrode provides good short channel effect and reduced gate leakage. In another embodiment, the source gate electrode and drain gate electrode comprises different high-k gate dielectric stacks and different gate conductor materials, wherein the source side gate electrode has a first work function a quarter band gap away from a band gap edge and the drain side gate electrode has a second work function near the band gap edge.
摘要翻译：金属氧化物半导体场效应晶体管（MOSFET）的栅极包括源极侧栅电极和漏极侧栅电极，在栅极中间附近彼此邻接。在一个实施例中，源极侧栅极包括基于氧化硅的栅极电介质，漏极侧栅极包括高k栅极电介质。源极栅电极提供高载流子迁移率，而漏极侧栅电极提供良好的短沟道效应和减小的栅极泄漏。在另一个实施例中，源极栅极和漏极栅电极包括不同的高k栅极电介质堆叠和不同的栅极导体材料，其中源极侧栅电极具有远离带隙边缘的四分之一带隙的第一功函数和漏极侧栅电极在带隙边缘附近具有第二功函数。

87. 发明授权

US09397104B2 SRAM cell and method for manufacturing the same 有权
标题翻译： SRAM单元及其制造方法
公开(公告)号：US09397104B2
公开(公告)日：2016-07-19
申请号：US13509891
申请日：2011-11-23
申请人： Huilong Zhu , Qingqing Liang
发明人： Huilong Zhu , Qingqing Liang
IPC分类号： H01L21/70 , H01L27/11 , H01L21/84 , H01L27/12
CPC分类号： H01L27/1104 , H01L21/845 , H01L27/1211
摘要： In one embodiment, a SRAM cell may include a substrate and a first Fin Field Effect Transistor (FinFET) and a second FinFET formed on the substrate. The first FinFET may include a first fin which is formed in a semiconductor layer provided on the substrate and abuts the semiconductor layer, and the second FinFET may include a second fin which is formed in the semiconductor layer and abuts the semiconductor layer. The semiconductor layer may include a plurality of semiconductor sub-layers. The first and second fins can include different number of the semiconductor sub-layers and have different heights from each other.
摘要翻译：在一个实施例中，SRAM单元可以包括衬底和形成在衬底上的第一Fin场效应晶体管（FinFET）和第二FinFET。第一FinFET可以包括形成在衬底上的半导体层中，并与该半导体层相邻的第一鳍片，并且第二鳍片FET可以包括形成在半导体层中并邻接半导体层的第二鳍片。半导体层可以包括多个半导体子层。第一和第二散热片可以包括不同数量的半导体子层，并且彼此具有不同的高度。

88. 发明授权

US09263581B2 Semiconductor structure and method for manufacturing the same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US09263581B2
公开(公告)日：2016-02-16
申请号：US14394802
申请日：2012-05-30
申请人： Huilong Zhu , Haizhou Yin , Zhijiong Luo , Qingqing Liang
发明人： Huilong Zhu , Haizhou Yin , Zhijiong Luo , Qingqing Liang
IPC分类号： H01L23/62 , H01L29/78 , H01L29/66 , H01L29/786 , H01L21/265 , H01L21/324 , H01L29/06
CPC分类号： H01L29/7849 , H01L21/265 , H01L21/26506 , H01L21/2652 , H01L21/324 , H01L29/0649 , H01L29/66545 , H01L29/66583 , H01L29/66772 , H01L29/78654
摘要： A method for manufacturing a semiconductor structure comprises the following steps: providing an SOI substrate and forming a gate structure on the SOI substrate; implanting ions to induce stress in the semiconductor structure by using the gate structure as mask to form a stress-inducing region, which is located under the BOX layer on the SOI substrate on both sides of the gate structure. A semiconductor structure manufactured according to the above method is also disclosed. The semiconductor structure and the method for manufacturing the same disclosed in the present application form on the ground layer a stress-inducing region, which provides favorable stress to the semiconductor device channel and contributes to the improvement of the semiconductor device performance.
摘要翻译：一种制造半导体结构的方法包括以下步骤：在SOI衬底上提供SOI衬底并形成栅极结构; 通过使用栅极结构作为掩模来注入离子以在半导体结构中引起应力，以形成位于栅极结构两侧的SOI衬底上的BOX层下方的应力诱导区域。还公开了根据上述方法制造的半导体结构。在本申请中公开的半导体结构及其制造方法在地层上形成应力诱导区域，其对半导体器件沟道提供有利的应力，有助于提高半导体器件的性能。

89. 发明授权

US09178070B2 Semiconductor structure and method for manufacturing the same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US09178070B2
公开(公告)日：2015-11-03
申请号：US13138053
申请日：2011-03-04
申请人： Huilong Zhu , Qingqing Liang , Zhijiong Luo , Haizhou Yin
发明人： Huilong Zhu , Qingqing Liang , Zhijiong Luo , Haizhou Yin
IPC分类号： H01L27/12 , H01L29/786 , H01L29/423 , H01L29/66
CPC分类号： H01L29/78648 , H01L29/42384 , H01L29/66772 , H01L29/78603
摘要： The present application discloses a semiconductor structure and a method for manufacturing the same. A semiconductor structure according to the present invention can adjust the threshold voltage by capacitive coupling between a backgate region either and a source region or a drain region with a common contact, i.e. a source contact or a drain contact, which leads to a simple manufacturing process, a higher integration level, and a lower manufacture cost. Moreover, the asymmetric design of the backgate structure, together with the doping of the backgate region which can be varied as required in an actual device design, can further enhance the effects of adjusting the threshold voltage and improve the performances of the device.
摘要翻译：本申请公开了一种半导体结构及其制造方法。根据本发明的半导体结构可以通过在具有公共接触的源极区域或漏极区域之间的电容耦合来调节阈值电压，即源极接触或漏极接触，这导致简单的制造过程，更高的集成度，更低的制造成本。此外，背栅结构的非对称设计以及可以根据实际器件设计中所需而改变的背栅区域的掺杂，可以进一步增强调节阈值电压并提高器件性能的效果。

90. 发明授权

US08766371B2 Semiconductor structure and method for manufacturing the same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US08766371B2
公开(公告)日：2014-07-01
申请号：US13256866
申请日：2011-02-25
申请人： Huilong Zhu , Qingqing Liang , Zhijiong Luo , Haizhou Yin
发明人： Huilong Zhu , Qingqing Liang , Zhijiong Luo , Haizhou Yin
IPC分类号： H01L21/70
CPC分类号： H01L29/4983 , H01L21/823807 , H01L21/823842 , H01L21/823864 , H01L29/66545 , H01L29/7845
摘要： There is provided a semiconductor structure and a method for manufacturing the same. The semiconductor structure according to the present invention comprises: a semiconductor substrate; a channel region formed on the semiconductor substrate; a gate stack formed on the channel region; and source/drain regions formed on both sides of the channel region and embedded in the semiconductor substrate. The gate stack comprises: a gate dielectric layer formed on the channel region; and a conductive layer positioned on the gate dielectric layer. For an nMOSFET, the conductive layer has a compressive stress to apply a tensile stress to the channel region; and for a pMOSFET, the conductive layer has a tensile stress to apply a compressive stress to the channel region.
摘要翻译：提供半导体结构及其制造方法。根据本发明的半导体结构包括：半导体衬底; 形成在半导体衬底上的沟道区; 形成在沟道区上的栅叠层; 以及形成在沟道区两侧并嵌入在半导体衬底中的源/漏区。栅极堆叠包括：形成在沟道区上的栅极电介质层; 以及位于栅介质层上的导电层。对于nMOSFET，导电层具有将压应力施加到沟道区的压应力; 并且对于pMOSFET，导电层具有拉伸应力以向沟道区域施加压应力。

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