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81. 发明授权

US06864624B2 Electron emitter device for data storage applications 失效
标题翻译：用于数据存储应用的电子发射器件
公开(公告)号：US06864624B2
公开(公告)日：2005-03-08
申请号：US10697170
申请日：2003-10-30
申请人： Henryk Birecki , Vu Thien Binh , Si-ty Lam , Huei Pei Kuo , Steven L. Naberhuis
发明人： Henryk Birecki , Vu Thien Binh , Si-ty Lam , Huei Pei Kuo , Steven L. Naberhuis
IPC分类号： G11C11/42 , G11B9/00 , H01J1/304 , H01J1/308 , H01J9/02 , H01J1/14 , H01J1/16 , H01L21/76
CPC分类号： B82Y10/00 , G11B9/14 , G11B9/1409 , H01J1/308
摘要： A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer placed on the Schottky metal is typically very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride or other comparable materials.
摘要翻译：公开了一种场致发射装置，其可以在超高密度存储系统内使用。发射器件包括发射电极，提取器电极和利用肖特基金属 - 半导体结或势垒的固态场控制的发射极。肖特基金属半导体势垒形成在发射极电极上并与提取器电极电耦合，使得当在发射电极和提取器电极之间放置电位时，从半导体的暴露表面产生电子的场发射层。此外，肖特基金属可以选自能够在屏障处提供高电子池的典型的导电层，例如铂，金，银或导电半导体层。放置在肖特基金属上的半导体层通常是n型非常弱的导电性并且具有宽的带隙，以便产生有助于在提供电子发射所必需的施加场产生诱导的负电子亲和力的条件。一种类型的宽带隙材料可以选自二氧化钛或氮化钛或其他可比较的材料。

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