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81. 发明授权

US5196668A DC resistance welding apparatus 失效
标题翻译：直流电阻焊接装置
公开(公告)号：US5196668A
公开(公告)日：1993-03-23
申请号：US850320
申请日：1992-03-12
申请人： Nobuo Kobayashi , Fumitomo Takano , Makoto Suzuki , Hitoshi Saito , Hidenori Koga
发明人： Nobuo Kobayashi , Fumitomo Takano , Makoto Suzuki , Hitoshi Saito , Hidenori Koga
IPC分类号： B23K11/24
CPC分类号： B23K11/24
摘要： A DC resistance welding apparatus includes a pair of welding electrodes for sandwiching workpieces to be welded therebetween and a circuit connected to the welding electrodes for supplying a welding current to said welding electrodes. The circuit includes a plurality of parallel-connected rectifying circuits each having a welding transformer and rectifying circuit. The circuit monitors the power signal produced by inverters in the power supply to determine the proper energization time by producing a pulse signal corresponding to the waveform of the power signal. The rise and fall of the pulse signal is then detected and differentiated. The differential signal is used as a basis to control the energization time of the welding gun.
摘要翻译：直流电阻焊接装置包括一对用于夹持要焊接的工件的焊接电极和连接到用于向焊接电极提供焊接电流的焊接电极的电路。该电路包括多个并联连接的整流电路，每个电路具有焊接变压器和整流电路。该电路通过产生与功率信号的波形相对应的脉冲信号来监视电源中由逆变器产生的电力信号，以确定适当的通电时间。然后检测和区分脉冲信号的上升和下降。差分信号用作控制焊枪通电时间的基础。

82. 发明授权

US5141452A Electrical connector 失效
公开(公告)号：US5141452A
公开(公告)日：1992-08-25
申请号：US671416
申请日：1991-03-20
申请人： Takahiro Yoneda , Takayoshi Endo , Hitoshi Saito , Kimihiro Abe
发明人： Takahiro Yoneda , Takayoshi Endo , Hitoshi Saito , Kimihiro Abe
IPC分类号： H01R13/436
CPC分类号： H01R13/4368
摘要： An electrical connector assembly includes a connector housing, a terminal support and a terminal holder. The terminal support is integrally connected to the connector housing. The terminal support has therein a plurality of abreast arranged passages to receive a plurality of terminals. The terminal holder has a through bore which is so sized as to receive therein the terminal support. The terminal holder is formed at rear portions thereof a pair of openable portions. The terminal holder is to be incompletely and completely latched to one of the connector housing and the terminal support with the openable portion assuming the open and closed conditions, respectively.

83. 发明授权

US5018045A Corona discharger for use in electrophotographic copying machine 失效
标题翻译：用于电子照相复印机的电晕放电机
公开(公告)号：US5018045A
公开(公告)日：1991-05-21
申请号：US507748
申请日：1990-04-12
申请人： Hisashi Myochin , Yoshinori Inoue , Hitoshi Saito , Narutaka Yoshida
发明人： Hisashi Myochin , Yoshinori Inoue , Hitoshi Saito , Narutaka Yoshida
IPC分类号： G03G15/02 , H01T19/00
CPC分类号： G03G15/0258 , G03G15/0291 , H01T19/00
摘要： There is disclosed a corona discharger comprising a discharge wire for producing a corona discharge, a voltage source for applying a predetermined voltage to the discharge wire, an electrically conductive back plate being provided on the opposite side of the discharge wire to a member to be electrified, and an electrically conductive side plate being provided close to the member to be electrified. In the corona discharger, an opening for discharging ozone produced by said corona discharge is formed between said side plate and said back plate, and respective electric potentials of the side plate and the back plate are set so that a difference between respective electric potentials of the side plate and the discharge wire becomes lower than a difference between respective electric potentials of the back plate and the discharge wire.
摘要翻译：公开了一种电晕放电器，其包括用于产生电晕放电的放电线，用于向放电线施加预定电压的电压源，导电背板设置在放电线的相对一侧以被带电的构件，并且设置在靠近要带电的构件的导电侧板上。在电晕放电器中，在所述侧板和所述背板之间形成用于排出由所述电晕放电产生的臭氧的开口，并且设置侧板和背板的各自的电位，使得各个电位之间的差侧板和放电线变得低于背板和放电线的各自电位之间的差。

84. 发明授权

US4814449A Substance 4181-2 失效
标题翻译：物质4181-2
公开(公告)号：US4814449A
公开(公告)日：1989-03-21
申请号：US48297
申请日：1987-05-11
申请人： Qi Chang-qing , Tian Jie , Teruyoshi Marunaka , Yuji Yamada , Ichiro Yamawaki , Toshio Ohtani , Yoshinori Minami , Hitoshi Saito
发明人： Qi Chang-qing , Tian Jie , Teruyoshi Marunaka , Yuji Yamada , Ichiro Yamawaki , Toshio Ohtani , Yoshinori Minami , Hitoshi Saito
IPC分类号： C07D498/14 , C12P17/18 , C07D498/12 , A61K31/33 , A61K31/445
CPC分类号： C07D498/14 , C12P17/188 , C12R1/465 , Y10S514/908
摘要： Disclosed are a compound of the general formula ##STR1## wherein R.sub.1 and R.sub.2 are the same or different and each represents a hydrogen atom, an alkyl group or an acyl group, process for the production thereof and use thereof. The compounds have an antitumor activity, and those wherein both of R.sub.1 and R.sub.2 represent a hydrogen atom or an acyl group are novel compounds.
摘要翻译：公开了通式（II）的化合物，其中R 1和R 2相同或不同，各自表示氢原子，烷基或酰基，其制备方法和用途。这些化合物具有抗肿瘤活性，其中R1和R2都表示氢原子或酰基的化合物是新化合物。

85. 发明授权

US4685039A DC/DC converter 失效
标题翻译： DC / DC转换器
公开(公告)号：US4685039A
公开(公告)日：1987-08-04
申请号：US873091
申请日：1986-06-04
申请人： Kiyoharu Inou , Hitoshi Saito
发明人： Kiyoharu Inou , Hitoshi Saito
IPC分类号： H02M3/335
CPC分类号： H02M3/33569
摘要： A DC/DC converter which may be used as a power supply of high capacity. The DC/DC converter comprises first and second converters having their primary terminals connected in series so as to insure high output power and high breakdwon voltage; a first diode for forming a closed circuit together with a transformer of the first converter and a capacitor of the second converter when a switching element of the first converter is turned "off"; and a second diode for forming a closed circuit together with a transformer of the second converter and a capacitor of the first converter when a switching element of the second converter is turned "off".
摘要翻译：可用作高容量电源的DC / DC转换器。 DC / DC转换器包括其初级端子串联连接的第一和第二转换器，以确保高输出功率和高断续电压; 当第一转换器的开关元件“关闭”时，用于与第一转换器的变压器一起形成闭合电路的第一二极管和第二转换器的电容器; 以及第二二极管，用于当第二转换器的开关元件“关闭”时与第二转换器的变压器一起形成闭合电路和第一转换器的电容器。

86. 发明授权

US08490209B2 Surface state measuring device, and surface state measuring method using the device 有权
标题翻译：表面状态测量装置和使用该装置的表面状态测量方法
公开(公告)号：US08490209B2
公开(公告)日：2013-07-16
申请号：US12852635
申请日：2010-08-09
申请人： Hitoshi Saito
发明人： Hitoshi Saito
IPC分类号： G01Q20/00
CPC分类号： G01Q60/54
摘要： Provided are a surface state measuring device which can measure an alternating force of an arbitrary frequency and which is excellent in spatial resolution, and a surface state measuring method using the device. This surface state measuring device measures the surface state of a sample by detecting the modulation of the oscillation of a probe arranged above the sample. The measuring device comprises: a cantilever having a probe near a free end; an excitation mechanism for exciting the cantilever; a scanning mechanism for making the probe scan the sample by moving the probe and the sample relative to each other; and alternating force generator for generating an alternating force of an arbitrary frequency in a space; and a modulation measuring mechanism for measuring the degree of frequency modulation or amplitude modulation of the oscillations of the probe, which are generated by the alternating force.
摘要翻译：提供一种能够测量任意频率的交变力并且空间分辨率优异的表面状态测量装置以及使用该装置的表面状态测量方法。该表面状态测量装置通过检测布置在样品上方的探针的振荡的调制来测量样品的表面状态。测量装置包括：悬臂，其具有靠近自由端的探头; 用于激发悬臂的激励机构; 用于使探针通过相对于彼此移动探针和样品来扫描样品的扫描机构; 以及用于在空间中产生任意频率的交替力的交替力发生器; 以及调制测量机构，用于测量由交替的力产生的探针的振荡的频率调制或幅度调制的程度。

87. 发明申请

US20130015587A1 SEMICONDUCTOR DEVICE AND TEST METHOD 有权
标题翻译：半导体器件和测试方法
公开(公告)号：US20130015587A1
公开(公告)日：2013-01-17
申请号：US13482146
申请日：2012-05-29
申请人： Akihiko Okutsu , Hitoshi Saito , Yoshiaki Okano
发明人： Akihiko Okutsu , Hitoshi Saito , Yoshiaki Okano
IPC分类号： H01L21/66 , H01L23/522
CPC分类号： G01R31/275 , G01R31/2601 , G01R31/2884 , H01L22/32 , H01L23/522 , H01L23/564 , H01L23/585 , H01L2224/05554 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate including an element region, an inner sealing and an outer sealing which are formed on the element region and have a first opening part and a second opening part, respectively, a multilayer interconnection structure which is formed on the substrate and stacks multiple inter-layer insulation films each including a wiring layer, a moisture resistant film formed between a first inter-layer insulation film and a second inter-layer insulation film which are included in the multilayer interconnection structure, a first portion which extended from a first side of the moisture resistant film and passes the first opening part, a second portion which extended from a second side of the moisture resistant film and passes through the second opening part, and a wiring pattern including a via plug which penetrates the moisture resistant film and connects the first portion and the second portion.
摘要翻译：半导体器件包括：半导体衬底，包括元件区域，内部密封件和外部密封件，所述元件区域，内部密封件和外部密封件分别形成在所述元件区域上并具有第一开口部分和第二开口部分，所述多层互连结构分别形成在所述衬底上并且堆叠多个层间绝缘膜，每个层间绝缘膜包括布线层，形成在包括在多层互连结构中的第一层间绝缘膜和第二层间绝缘膜之间的防潮膜，第一部分从所述防潮膜的第一面通过所述第一开口部，所述第二部分从所述防湿膜的第二侧延伸并穿过所述第二开口部;以及布线图案，其包括穿过所述防潮膜的通孔塞并且连接第一部分和第二部分。

88. 发明申请

US20080284422A1 Method and Device for Analyzing Distribution of Coercive Force in Vertical Magnetic Recording Medium Using Magnetic Force Microscope 失效
标题翻译：使用磁力显微镜分析垂直磁记录介质中矫顽力分布的方法和装置
公开(公告)号：US20080284422A1
公开(公告)日：2008-11-20
申请号：US11631101
申请日：2005-06-15
申请人： Shunji Ishio , Hitoshi Saito
发明人： Shunji Ishio , Hitoshi Saito
IPC分类号： G01R33/00
CPC分类号： G01R33/14 , G01Q60/50 , G01Q60/56 , G01R33/10
摘要： In a coercive force distribution analysis device, a magnetic field is applied in substantially vertical direction to a sample having a magnetic thin film capable of recording vertical magnetism. A magnetic flux detection signal is generated in accordance with the leaking magnetic flux generated from a magnetic domain of the sample surface while the sample is horizontally moved. A first and a second external magnetic field corresponding to a first and a second threshold value selected from hysteresis characteristic corresponding to the sample average magnetization are applied to the sample so as to generate image data on a first and a second magnetic domain. The first and the second image data are subjected to digitization processing by the first and the second threshold value and the difference between them is generated as a first coercive force distribution pattern.
摘要翻译：在矫顽力分布分析装置中，向具有能够记录垂直磁性的磁性薄膜的样品的大致垂直方向施加磁场。根据在样品水平移动时从样品表面的磁畴产生的泄漏磁通产生磁通量检测信号。将对应于从对应于采样平均磁化强度的滞后特性中选择的第一和第二阈值的第一和第二外部磁场施加到样本，以便在第一和第二磁畴上产生图像数据。通过第一和第二阈值对第一和第二图像数据进行数字化处理，并且产生它们之间的差作为第一矫顽力分布图案。

89. 发明授权

US07298051B2 Semiconductor element and manufacturing method thereof 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US07298051B2
公开(公告)日：2007-11-20
申请号：US11208549
申请日：2005-08-23
申请人： Hitoshi Saito
发明人： Hitoshi Saito
IPC分类号： H01L29/40
CPC分类号： H01L24/05 , H01L24/03 , H01L24/48 , H01L24/49 , H01L2224/02166 , H01L2224/04042 , H01L2224/05093 , H01L2224/05095 , H01L2224/05096 , H01L2224/05554 , H01L2224/05599 , H01L2224/05624 , H01L2224/48463 , H01L2224/49171 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/01087 , H01L2924/04941 , H01L2924/14 , H01L2924/181 , H01L2224/45099 , H01L2924/00
摘要： In a semiconductor element, if a crack is generated inside a bonding pad, the crack does not propagate inside the semiconductor element. The semiconductor element has an electrode on a surface thereof. A wiring layer is formed inside the semiconductor element. A conductive layer is formed separate from the wiring layer so as to form a surface of the electrode. A plurality of pole-like members are formed of a conductive material and extending between the wiring layer and the conductive layer and arranged adjacent to each other. The insulating layer is formed of an insulating material filled between the plurality of pole-like members. A frame member extends between the wiring layer and the conductive layer so as to surround the plurality of pole-like members and the insulating layer together.
摘要翻译：在半导体元件中，如果在焊盘内产生裂纹，则裂纹不会在半导体元件的内部传播。半导体元件的表面具有电极。在半导体元件内形成布线层。导电层与布线层分离形成以形成电极的表面。多个极性部件由导电材料形成并且在布线层和导电层之间延伸并彼此相邻布置。绝缘层由填充在多个杆状构件之间的绝缘材料形成。框架构件在布线层和导电层之间延伸，以便将多个极性构件和绝缘层包围在一起。

90. 发明申请

US20060267222A1 Semiconductor element and manufacturing method thereof 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US20060267222A1
公开(公告)日：2006-11-30
申请号：US11208549
申请日：2005-08-23
申请人： Hitoshi Saito
发明人： Hitoshi Saito
IPC分类号： H01L23/48
CPC分类号： H01L24/05 , H01L24/03 , H01L24/48 , H01L24/49 , H01L2224/02166 , H01L2224/04042 , H01L2224/05093 , H01L2224/05095 , H01L2224/05096 , H01L2224/05554 , H01L2224/05599 , H01L2224/05624 , H01L2224/48463 , H01L2224/49171 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/01087 , H01L2924/04941 , H01L2924/14 , H01L2924/181 , H01L2224/45099 , H01L2924/00
摘要： In a semiconductor element, if a crack is generated inside a bonding pad, the crack does not propagate inside the semiconductor element. The semiconductor element has an electrode on a surface thereof. A wiring layer is formed inside the semiconductor element. A conductive layer is formed separate from the wiring layer so as to form a surface of the electrode. A plurality of pole-like members are formed of a conductive material and extending between the wiring layer and the conductive layer and arranged adjacent to each other. The insulating layer is formed of an insulating material filled between the plurality of pole-like members. A frame member extends between the wiring layer and the conductive layer so as to surround the plurality of pole-like members and the insulating layer together.
摘要翻译：在半导体元件中，如果在焊盘内产生裂纹，则裂纹不会在半导体元件的内部传播。半导体元件的表面具有电极。在半导体元件内形成布线层。导电层与布线层分离形成以形成电极的表面。多个极性部件由导电材料形成并且在布线层和导电层之间延伸并彼此相邻布置。绝缘层由填充在多个杆状构件之间的绝缘材料形成。框架构件在布线层和导电层之间延伸，以便将多个极性构件和绝缘层包围在一起。

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