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    • 81. 发明授权
    • Power semiconductor device with a gate withstand-voltage test terminal
    • 功率半导体器件具有栅极耐压测试端子
    • US5502399A
    • 1996-03-26
    • US264046
    • 1994-06-22
    • Hiroshi Imai
    • Hiroshi Imai
    • H01L29/78G01R31/28G01R31/317H01L21/822H01L27/04H01L27/06
    • G01R31/2884G01R31/31701
    • A power semiconductor device comprises a MOSFET 32 having a gate oxide film 63 formed on a semiconductor substrate 51 and a gate voltage applying circuit 33 integrally formed on the semiconductor substrate 51. The gate voltage applying circuit 33 which includes Zener diode 41a converts a DC power source voltage into a constant gate driving voltage using the Zener diode 41a. The gate voltage applying circuit applies the gate driving voltage to a gate of MOSFET 32 in response to a gate trigger signal. A test mode setting terminal CHK is provided for setting a test mode-by which a test voltage higher than the gate driving voltage is applied to the gate of the MOSFET 32 in a gate withstand voltage test. A test-use Zener diode 41b is provided in the gate voltage applying circuit 33 and connected in series with Zener diode 41a. A switching transistor 42, connected in parallel with the test-use Zener diode 4b, responds to a signal given from the test mode setting terminal CHK to short-circuit test-use Zener diode 4b in a normal operating condition, the short-circuit condition of the test-use Zener diode 4b being released in a gate withstand voltage test condition so that the test voltage is applied to the gate of the MOSFET 32 in the gate withstand voltage test ,the test voltage being higher than the gate driving voltage.
    • 功率半导体器件包括具有形成在半导体衬底51上的栅极氧化膜63和整体形成在半导体衬底51上的栅极电压施加电路33的MOSFET 32.包括齐纳二极管41a的栅极电压施加电路33将DC电力 使用齐纳二极管41a将源极电压转换成恒定栅极驱动电压。 栅极电压施加电路响应于栅极触发信号将栅极驱动电压施加到MOSFET 32的栅极。 提供了一种测试模式设置端子CHK,用于设置测试模式,在栅极耐压测试中,将测试电压高于栅极驱动电压施加到MOSFET32的栅极。 测试用齐纳二极管41b设置在栅极电压施加电路33中并与齐纳二极管41a串联连接。 与测试用齐纳二极管4b并联连接的开关晶体管42响应来自测试模式设置端子CHK的信号,以在正常工作状态下短路测试用齐纳二极管4b,短路状态 测试用齐纳二极管4b在栅极耐压测试条件下被释放,使得在栅极耐压测试中将测试电压施加到MOSFET32的栅极,测试电压高于栅极驱动电压。
    • 90. 发明授权
    • Drive unit
    • 驱动单元
    • US09124160B2
    • 2015-09-01
    • US13469134
    • 2012-05-11
    • Yuuji SugaHiroshi Imai
    • Yuuji SugaHiroshi Imai
    • H02K5/22H02K11/00
    • H02K11/0073H02K5/225H02K11/33
    • A drive unit has a motor, a control unit, and a fastener. The motor is housed in a motor case, and includes a stator, a rotor, and a shaft. The stator has winding wires that are wound therein and are electrically coupled to motor wires. The rotor is disposed inside of the stator and the shaft is disposed in and coupled to the rotor, such that the rotor and shaft rotate, as one, within the stator. The control unit includes a semiconductor module with a switching element, a connection terminal that electrically couples the switching element with other devices, and a control unit case to house the semiconductor module. The fastener is disposed in the control unit case, such that the fastener couples the motor and the control unit, and electrically couples the motor wire and the connection terminal.
    • 驱动单元具有马达,控制单元和紧固件。 电动机容纳在电动机壳体中,并且包括定子,转子和轴。 定子具有卷绕在其中并且电耦合到电动机线的绕组线。 转子设置在定子的内部,并且轴设置在转子中并联接到转子,使得转子和轴在定子内一个旋转。 控制单元包括具有开关元件的半导体模块,将开关元件与其它器件电耦合的连接端子以及容纳半导体模块的控制单元壳体。 紧固件设置在控制单元壳体中,使得紧固件联接电动机和控制单元,并且电耦合电动机线和连接端子。