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81. 发明申请

US20110260160A1 Method for Manufacturing Semiconductor Device 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20110260160A1
公开(公告)日：2011-10-27
申请号：US13174980
申请日：2011-07-01
申请人： Tatsuya Honda , Yasuyuki Arai
发明人： Tatsuya Honda , Yasuyuki Arai
IPC分类号： H01L29/786
CPC分类号： H01L27/1225 , H01L27/3244 , H01L29/7869 , Y10T428/12917
摘要： An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost. A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法，其中可以减少光刻步骤的数量，可以简化制造工艺，并且可以以低成本高成品率地进行制造。一种制造半导体器件的方法包括以下步骤：形成半导体膜; 通过使激光束通过包括用于屏蔽激光束的屏蔽的光掩模来照射激光束; 通过在半导体膜中的光掩模中未形成屏蔽的区域激光照射激光束的区域; 形成岛状半导体膜，使得由于其是在光掩模中形成屏蔽的区域而不被激光束照射的区域不升华; 形成作为源极电极和漏极电极之一的第一电极和作为源极电极和漏极电极中的另一个的第二电极; 形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。

82. 发明授权

US08008670B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08008670B2
公开(公告)日：2011-08-30
申请号：US11674410
申请日：2007-02-13
申请人： Tatsuya Honda
发明人： Tatsuya Honda
IPC分类号： H01L33/00
CPC分类号： H05B33/145 , H05B33/20 , H05B33/22
摘要： An object is to provide a light emitting element using an inorganic compound as a light emitting material, which has ever-higher luminous efficiency and can be driven with low voltage. The chance of excitation of light emitting centers (atoms) in a light emitting layer is increased to enhance luminous efficiency by providing a carrier supply layer in order to increase the number of carries in the light emitting layer of a light emitting element using an inorganic compound, and drive voltage of the light emitting element or a light emitting device is reduced.
摘要翻译：本发明的目的是提供使用无机化合物作为发光材料的发光元件，该发光元件具有越来越高的发光效率并且可以以低电压驱动。通过提供载体供给层来增加发光层中的发光中心（原子）的激发的机会，以通过使用无机化合物增加发光元件的发光层中的载体数目来提高发光效率，并且发光元件或发光器件的驱动电压降低。

83. 发明申请

US20110163311A1 Semiconductor Device and Manufacturing Method Thereof 有权
公开(公告)号：US20110163311A1
公开(公告)日：2011-07-07
申请号：US12948095
申请日：2010-11-17
申请人： Kengo Akimoto , Tatsuya Honda , Norihito Sone
发明人： Kengo Akimoto , Tatsuya Honda , Norihito Sone
IPC分类号： H01L29/12
CPC分类号： H01L29/78696 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02266 , H01L21/02565 , H01L21/02631 , H01L21/428 , H01L21/465 , H01L21/477 , H01L27/1225 , H01L27/1285 , H01L29/04 , H01L29/045 , H01L29/7869
摘要： An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

84. 发明授权

US07863627B2 Display device and electronic device provided with the same 有权
标题翻译：显示装置和配备有其的电子装置
公开(公告)号：US07863627B2
公开(公告)日：2011-01-04
申请号：US12342571
申请日：2008-12-23
申请人： Tatsuya Honda
发明人： Tatsuya Honda
IPC分类号： H01L33/00
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0823 , G09G2300/0842 , G09G2320/043
摘要： An object is to suppress decrease in luminance and appearance of flicker of a still image and to control a threshold voltage of a transistor for driving an EL element even in a state where the EL element continues to emit light for a certain period. An n-channel transistor and a p-channel transistor are provided as driving transistors for driving a light-emitting element, and a polarity of a potential which is supplied from a data line is reversed every given period and supplied to gates of the driving transistors in each pixel, whereby the threshold voltages of the driving transistors are controlled and change of luminance of the light-emitting element due to the threshold voltage shifts of the driving transistors can be reduced.
摘要翻译：目的是抑制静止图像的亮度的降低和闪烁的出现，并且即使在EL元件持续发光一段时间的状态下也控制用于驱动EL元件的晶体管的阈值电压。提供n沟道晶体管和p沟道晶体管作为用于驱动发光元件的驱动晶体管，并且从每个给定周期反转从数据线提供的电位的极性，并提供给驱动晶体管的栅极在每个像素中，由此控制驱动晶体管的阈值电压，并且可以减少由驱动晶体管的阈值电压偏移引起的发光元件的亮度变化。

85. 发明授权

US07799620B2 Manufacturing method of semiconductor device, manufacturing method of display device, semiconductor device, display device, and electronic device 有权
标题翻译：半导体装置的制造方法，显示装置的制造方法，半导体装置，显示装置以及电子装置
公开(公告)号：US07799620B2
公开(公告)日：2010-09-21
申请号：US12078093
申请日：2008-03-27
申请人： Tatsuya Honda
发明人： Tatsuya Honda
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1266 , H01L21/02683 , H01L21/02686 , H01L21/76254 , H01L27/1214 , H01L27/1229 , H01L29/66772
摘要： A method for manufacturing a semiconductor device provided with a circuit capable of high speed operation while the manufacturing cost is reduced. A method for manufacturing a semiconductor device which includes forming an ion-doped layer at a predetermined depth from a surface of a single-crystal semiconductor substrate and forming a first insulating layer over the single-crystal semiconductor substrate; forming a second insulating layer over part of an insulating substrate and forming a non-single-crystal semiconductor layer over the second insulating layer; bonding the single-crystal semiconductor substrate to a region of the insulating substrate where the second insulating layer is not formed, with the first insulating layer interposed therebetween; and forming a single-crystal semiconductor layer over the insulating substrate by separating the single-crystal semiconductor substrate at the ion-doped layer which acts as a separation surface so that the ion-doped layer is separated from the insulating substrate.
摘要翻译：一种制造半导体器件的方法，该半导体器件具有能够在制造成本降低的同时进行高速运转的电路。一种制造半导体器件的方法，包括在单晶半导体衬底的表面上形成预定深度的离子掺杂层，并在单晶半导体衬底上形成第一绝缘层; 在绝缘基板的一部分上形成第二绝缘层，并在第二绝缘层上形成非单晶半导体层; 将所述单晶半导体衬底接合到所述绝缘衬底的未形成所述第二绝缘层的区域，其间插入所述第一绝缘层; 以及通过在用作分离表面的离子掺杂层处分离单晶半导体衬底，使绝缘衬底上形成单晶半导体层，使得离子掺杂层与绝缘衬底分离。

86. 外观设计

USD623615S1 Television receiver 有权
公开(公告)号：USD623615S1
公开(公告)日：2010-09-14
申请号：US29325257
申请日：2008-09-29
申请人： Yu Kuramashi , Hideto Shimizu , Tatsuya Honda
设计人： Yu Kuramashi , Hideto Shimizu , Tatsuya Honda

87. 发明授权

US07777414B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07777414B2
公开(公告)日：2010-08-17
申请号：US11671716
申请日：2007-02-06
申请人： Tatsuya Honda
发明人： Tatsuya Honda
IPC分类号： H01J1/62
CPC分类号： H05B33/145
摘要： To provide a structure of a light emitting element superior in light emission efficiency to a top surface. A structure where two electrodes are arranged in a surface parallel to a substrate with a light emitting layer interposed therebetween, is provided. An electrode is not disposed below the light emitting layer. Therefore, by providing a reflective film below the light emitting layer, light emission efficiency to a top surface can be improved. For example, a film with a reflective index lower than that of the light emitting layer is provided, and light toward the lower side of the light emitting layer is reflected at an interface of the stack where the refractive index has a gap; accordingly, light emission efficiency to the top surface can be improved. In addition, a metal film with a high reflectance (a reflective metal film with a fixed potential or in a floating state) can be disposed below the light emitting layer.
摘要翻译：为了提供发光效率优异的发光元件的结构到顶面。提供了两个电极布置在平行于基板的表面中的发光层的结构。电极不设置在发光层的下方。因此，通过在发光层的下方设置反射膜，能够提高对顶面的发光效率。例如，提供具有比发光层低的反射率的膜，并且朝向发光层的下侧的光在折射率具有间隙的叠层的界面处反射; 因此，能够提高对顶面的发光效率。此外，具有高反射率的金属膜（具有固定电位或浮置状态的反射金属膜）可以设置在发光层的下方。

88. 发明申请

US20100197934A1 PROCESS FOR PRODUCING OPTICALLY ACTIVE ALPHA-METHYLCYSTEINE DERIVATIVE 审中-公开
标题翻译：生产光学活性阿尔法 - 甲基蛋白衍生物的方法
公开(公告)号：US20100197934A1
公开(公告)日：2010-08-05
申请号：US12757947
申请日：2010-04-09
申请人： Takahiro Ohishi , Hirokazu Nanba , Masanobu Sugawara , Masashi Izumida , Tatsuya Honda , Kohei Mori , Satohiro Yanagisawa , Nobuo Nagashima , Kenji Inoue
发明人： Takahiro Ohishi , Hirokazu Nanba , Masanobu Sugawara , Masashi Izumida , Tatsuya Honda , Kohei Mori , Satohiro Yanagisawa , Nobuo Nagashima , Kenji Inoue
IPC分类号： C12P17/10 , C12P13/12 , C07C321/00 , C07D233/02
CPC分类号： C12P13/12 , C07C319/06 , C07D233/76 , C12P17/04 , C12P17/10 , C12P41/009 , C07C323/58
摘要： The present invention provides a simple industrial process for producing an L- or D-optically active α-methylcysteine derivative or its salt, which is a useful pharmaceutical intermediate, from readily available, inexpensive raw materials. In a process for producing an L- or D-optically active α-methylcysteine derivative or its salt, a racemic N-carbamoyl-α-methylcysteine derivative or its salt is D-selectively cyclized with hydantoinase to produce a D-5-methyl-5-thiomethylhydantoin derivative or its salt and an N-carbamoyl-α-methyl-L-cysteine derivative or its salt, which are then subjected to deprotection of the amino group and the sulfur atom, and hydrolysis.
摘要翻译：本发明提供了一种简单的工业方法，用于从容易获得的便宜的原料制备作为有用的药物中间体的L-或D-光学活性的α-甲基半胱氨酸衍生物或其盐。在制备L-或D-光学活性α-甲基半胱氨酸衍生物或其盐的方法中，外消旋的N-氨基甲酰基-α-甲基半胱氨酸衍生物或其盐与乙内酰脲酶D选择性环化以产生D-5-甲基 - 5-硫代甲基乙内酰脲衍生物或其盐和N-氨基甲酰基-α-甲基-L-半胱氨酸衍生物或其盐，然后进行氨基和硫原子的脱保护和水解。

89. 发明申请

US20100136743A1 Semiconductor Device and Manufacturing Method Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100136743A1
公开(公告)日：2010-06-03
申请号：US12699240
申请日：2010-02-03
申请人： Kengo Akimoto , Tatsuya Honda , Norihito Sone
发明人： Kengo Akimoto , Tatsuya Honda , Norihito Sone
IPC分类号： H01L21/36
CPC分类号： H01L29/78696 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02266 , H01L21/02565 , H01L21/02631 , H01L21/428 , H01L21/465 , H01L21/477 , H01L27/1225 , H01L27/1285 , H01L29/04 , H01L29/045 , H01L29/7869
摘要： An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
摘要翻译：本发明的目的是提供一种半导体器件，其制造工艺不复杂并且可以通过以氧化锌为代表的氧化物半导体膜形成薄膜晶体管来制造成本。对于半导体器件，在基板上形成栅电极; 形成覆盖栅电极的栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体膜; 并且在氧化物半导体膜上形成第一导电膜和第二导电膜。氧化物半导体膜在沟道区域中至少具有结晶化区域。

90. 发明授权

US07651896B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07651896B2
公开(公告)日：2010-01-26
申请号：US11844134
申请日：2007-08-23
申请人： Tatsuya Honda , Yasuyuki Arai
发明人： Tatsuya Honda , Yasuyuki Arai
IPC分类号： H01L21/00
CPC分类号： H01L27/1225 , H01L27/3244 , H01L29/7869 , Y10T428/12917
摘要： An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost. A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法，其中可以减少光刻步骤的数量，可以简化制造工艺，并且可以以低成本高成品率地进行制造。一种制造半导体器件的方法包括以下步骤：形成半导体膜; 通过使激光束通过包括用于屏蔽激光束的屏蔽的光掩模来照射激光束; 通过在半导体膜中的光掩模中未形成屏蔽的区域激光照射激光束的区域; 形成岛状半导体膜，使得由于其是在光掩模中形成屏蔽的区域而不被激光束照射的区域不升华; 形成作为源极电极和漏极电极之一的第一电极和作为源极电极和漏极电极中的另一个的第二电极; 形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。

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