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81. 发明授权

US07821748B2 Magneto-resistance effect element including a damping factor adjustment layer, magneto-resistance effect head, magnetic storage and magnetic memory 有权
标题翻译：磁阻效应元件包括阻尼因子调节层，磁阻效应头，磁存储和磁存储器
公开(公告)号：US07821748B2
公开(公告)日：2010-10-26
申请号：US11525076
申请日：2006-09-22
申请人： Hideaki Fukuzawa , Masahiro Takashita , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Masahiro Takashita , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T428/1121
摘要： A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.
摘要翻译：提供了由旋转传递转矩引起的噪声减小的磁阻效应元件，磁阻效应头，磁存储器和磁存储器。在包括固定磁化层，间隔层和自由磁化层的磁阻效应元件的固定磁化层或自由磁化层中; 设置包含选自Ti，Zr，Nb，Mo，Ru，Rh，Pd，Ag，La，Hf，Ta，W，Re，Os，Ir，Pt和Au中的一种元素的层。

82. 发明授权

US07808747B2 Magnetoresistive effect element, magnetic head and magnetic recording/reproducing apparatus 有权
标题翻译：磁阻效应元件，磁头和磁记录/重放装置
公开(公告)号：US07808747B2
公开(公告)日：2010-10-05
申请号：US11702582
申请日：2007-02-06
申请人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/09 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3281 , H01L27/228 , H01L43/08
摘要： A magnetoresistive effect element includes a fixed magnetization layer; a free magnetization layer; a nonmagnetic spacer layer between the fixed magnetization layer and the free magnetization layer; and an insertion layer disposed on an opposite side of the free magnetization layer from the nonmagnetic spacer layer, wherein the first insulating layer has an oxide, a nitride, or an oxynitride including at least one kind of element selected from a group constituted of Al (aluminum), Si (silicon), Mg (magnesium), Ta (tantalum) and Zn (zinc) as a major constituent, and the insertion layer has an oxide, a nitride, or an oxynitride including at least one kind of element selected from a group constituted of Al (aluminum), Si (silicon), Mg (magnesium), Ta (tantalum) and Zn (zinc) as a major constituent.
摘要翻译：磁阻效应元件包括固定磁化层; 自由磁化层; 在固定磁化层和自由磁化层之间的非磁性间隔层; 以及插入层，其设置在所述自由磁化层与所述非磁性间隔层的相对侧上，其中，所述第一绝缘层具有氧化物，氮化物或氮氧化物，所述氧化物，氮化物或氮氧化物包含选自由Al组成的组中的至少一种元素铝），Si（硅），Mg（镁），Ta（钽）和Zn（锌）作为主要成分，并且所述插入层具有氧化物，氮化物或氧氮化物，其包含至少一种选自以Al（铝），Si（硅），Mg（镁），Ta（钽）和Zn（锌）为主要成分的基团。

83. 发明授权

US07785662B2 Method for manufacturing magnetoresistive element 有权
标题翻译：制造磁阻元件的方法
公开(公告)号：US07785662B2
公开(公告)日：2010-08-31
申请号：US11583968
申请日：2006-10-20
申请人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
IPC分类号： H05H1/00 , H01F41/00 , H01F41/22
CPC分类号： C23C8/02 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C8/34 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , C23C28/42 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3268 , H01F41/305
摘要： There is provided a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer arranged between the magnetization pinned layer and the magnetization free layer and current paths passing through the insulating layer. The method includes, in producing the spacer layer, depositing a first non-magnetic metal layer forming the current paths, depositing a second metal layer to be converted into the insulating layer on the first non-magnetic metal layer, and performing two stages of oxidation treatments in which a partial pressure of an oxidizing gas in a first oxidation treatment is set to 1/10 or less of a partial pressure of an oxidizing gas in a second oxidation treatment, and the second metal layer being irradiated with an ion beam or a RF plasma of a rare gas in the first oxidation treatment.
摘要翻译：提供了一种用于制造具有磁化钉扎层，磁化自由层和包括布置在磁化钉扎层和磁化自由层之间的绝缘层和穿过绝缘层的电流路径的间隔层的磁阻元件的方法。该方法包括在制造间隔层时，沉积形成电流路径的第一非磁性金属层，在第一非磁性金属层上沉积待转换成绝缘层的第二金属层，并进行两个阶段的氧化将第一氧化处理中的氧化气体的分压设定为第二氧化处理中的氧化气体的分压的1/10以下的处理，将第二金属层照射离子束或 RF等离子体中的稀有气体进行第一次氧化处理。

84. 发明授权

US07742262B2 Magnetoresistive element, magnetic head, magnetic recording apparatus, and magnetic memory 失效
标题翻译：磁阻元件，磁头，磁记录装置和磁存储器
公开(公告)号：US07742262B2
公开(公告)日：2010-06-22
申请号：US11848374
申请日：2007-08-31
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
IPC分类号： G11B5/39 , H01L29/76
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive element includes a first magnetic layer a magnetization direction of which is substantially pinned, a second magnetic layer a magnetization direction of which varies depending on an external field, a magnetic spacer layer provided between the first magnetic layer and the second magnetic layer, and electrodes which supply a current perpendicularly to a plane of a stacked film including the first magnetic layer, the magnetic spacer layer and the second magnetic layer. In this element, the magnetization directions of the first and the second magnetic layers are substantially orthogonal at zero external field.
摘要翻译：磁阻元件包括其磁化方向基本上被钉扎的第一磁性层，其磁化方向根据外部场变化的第二磁性层，设置在第一磁性层和第二磁性层之间的磁性间隔层，以及电极，其垂直于包括第一磁性层，磁性间隔层和第二磁性层的层叠膜的平面提供电流。在该元件中，第一和第二磁性层的磁化方向在零外场大致正交。

85. 发明申请

US20090162698A1 Magnetoresistive Effect Element and Manufacturing Method Thereof 有权
标题翻译：磁阻效应元件及其制造方法
公开(公告)号：US20090162698A1
公开(公告)日：2009-06-25
申请号：US12086761
申请日：2006-12-20
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
IPC分类号： B05D3/06
CPC分类号： H01F41/305 , B82Y25/00 , B82Y40/00 , G11B5/3163 , G11B5/3166 , G11B5/398 , G11B5/3983 , G11B2005/3996 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/08 , H01L43/12 , Y10T428/1121
摘要： A magnetoresistive effect element is produced by forming a first magnetic layer, a spacer layer including an insulating layer and a conductive layer which penetrates through the insulating layer and passes a current, on the first magnetic layer, and a second magnetic layer all of which or part of which is treated with ion, plasma or heat, on the formed spacer layer.
摘要翻译：磁阻效应元件通过在第一磁性层上形成第一磁性层，包括绝缘层的间隔层和穿过绝缘层并传导电流的导电层，以及第二磁性层，其中一部分用离子，等离子体或热处理，形成间隔层。

86. 发明申请

US20090097166A1 Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus 有权
标题翻译：磁阻元件，磁头和磁记录/重放装置
公开(公告)号：US20090097166A1
公开(公告)日：2009-04-16
申请号：US12314232
申请日：2008-12-05
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
IPC分类号： G11B5/33
CPC分类号： H01F10/324 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F10/3268
摘要： A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.
摘要翻译：磁阻元件具有彼此分离的第一磁性层和第二磁性层，第一磁性层和第二磁性层各自具有方向基本上被钉扎的磁化，以及形成为与第一磁性层接触的非磁性导电层磁性层和第二磁性层，并且电连接第一和第二磁性层，非磁性导电层形成自旋极化电子的路径从一个磁性层到另一个磁性层，非磁性导电层包括位于第一磁性层和第二磁性层之间的部分，该部分是感测区域。

87. 发明授权

US07505234B2 Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory 有权
标题翻译：磁阻效应元件，磁头，磁再现装置和磁存储器
公开(公告)号：US07505234B2
公开(公告)日：2009-03-17
申请号：US11930699
申请日：2007-10-31
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译：磁阻效应元件包括磁阻效应膜和一对电极。具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有厚度不大于3纳米，该膜具有选自氧化物，氮化物，氮氧化物，磷化物和氟化物中的至少一种。一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

88. 发明授权

US07495870B2 Magnetoresistive effect element, magnetic head, and magnetic reproducing apparatus 有权
标题翻译：磁阻效应元件，磁头和磁再现装置
公开(公告)号：US07495870B2
公开(公告)日：2009-02-24
申请号：US10954545
申请日：2004-10-01
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki
IPC分类号： G11B5/33
CPC分类号： H01F10/3272 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F41/32 , H01F41/325 , H01L27/224 , H01L27/228 , H01L43/08
摘要： A magnetoresistive effect element includes a magnetization pinned layer, a magnetization free layer; a nonmagnetic metal layer disposed between the magnetization pinned layer and the magnetization free layer, a resistance increasing layer, a spin filter layer, and a pair of electrodes. The resistance increasing layer includes a insulation portion and is disposed in at least one of the magnetization pinned layer, the magnetization free layer, and the nonmagnetic metal layer. The spin filter layer is disposed to be adjacent to the magnetization free layer and has a thickness in a range of 5 nm to 20 nm. The magnetization free layer is disposed between the spin filter layer and the nonmagnetic metal layer. The magnetization pinned layer, the magnetization free layer, the nonmagnetic layer, the resistance increasing layer, and the spin filter layer are disposed between the electrodes.
摘要翻译：磁阻效应元件包括磁化钉扎层，无磁化层; 设置在磁化被钉扎层和无磁化层之间的非磁性金属层，电阻增加层，自旋滤波器层和一对电极。电阻增加层包括绝缘部分，并且设置在磁化钉扎层，磁化自由层和非磁性金属层中的至少一个中。自旋过滤层被设置为与无磁化层相邻，并且具有5nm至20nm范围内的厚度。无磁化层设置在自旋过滤层和非磁性金属层之间。磁化固定层，磁化自由层，非磁性层，电阻增加层和自旋滤波器层设置在电极之间。

89. 发明申请

US20080129401A1 High-Frequency Oscillator 有权
标题翻译：高频振荡器
公开(公告)号：US20080129401A1
公开(公告)日：2008-06-05
申请号：US12027650
申请日：2008-02-07
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
IPC分类号： H03B5/40
CPC分类号： H03B15/006 , B82Y25/00 , G01S7/006 , G01S7/35 , G01S13/345 , G01S2013/936 , H01F10/3259 , H01F10/329 , Y10T428/24942
摘要： A high-frequency oscillator includes a high-frequency oscillation element having a magnetization pinned layer whose magnetization direction is pinned substantially in one direction, an oscillation layer formed of a magnetic material which generates a high-frequency oscillation phenomenon when a current is supplied, an intermediate layer provided between the magnetization pinned layer and the oscillation layer, the intermediate layer having an insulation layer and current paths which pass through the insulation layer in a thickness direction, and a pair of electrodes which supply a current perpendicularly to a plane of a stacked film including the magnetization pinned layer, the intermediate layer and the oscillation layer.
摘要翻译：高频振荡器包括：高频振荡元件，具有磁化被钉扎层，其磁化方向基本上被固定在一个方向上;振动层，其由在供应电流时产生高频振荡现象的磁性材料形成，中间层设置在磁化被钉扎层和振荡层之间，中间层具有绝缘层和沿厚度方向穿过绝缘层的电流路径，以及一对电极，其垂直于堆叠的平面提供电流膜包括磁化固定层，中间层和振荡层。

90. 发明申请

US20080102315A1 Method for manufacturing a magneto-resistance effect element, and magneto-resistance effect element 有权
标题翻译：磁阻效应元件的制造方法以及磁阻效应元件
公开(公告)号：US20080102315A1
公开(公告)日：2008-05-01
申请号：US11822545
申请日：2007-07-06
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
IPC分类号： G11B5/39 , B05D5/12 , H05H1/00
CPC分类号： G11B5/3983 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , H01F10/3259 , H01F10/3272 , H01F41/305 , H01L43/08 , H01L43/12 , Y10T428/1121
摘要： In a method for manufacturing a magneto-resistance effect element having a pinned magnetic layer of which a magnetization is fixed substantially in one direction, a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and a spacer layer, which is located between the fixed magnetization layer and the free magnetization layer, with an insulating layer and a metallic layer penetrating through the insulating layer, the spacer layer is formed by forming a first metallic layer; forming, on the first metallic layer, a second metallic layer to be converted into a portion of the insulating layer; performing a first conversion treatment so as to convert the second metallic layer into the portion of said insulating layer and to form a portion of the metallic layer penetrating through the insulating layer; forming, on the insulating layer and the metallic layer formed through the first conversion treatment, a third metallic layer to be converted into the other portion of the insulating layer; and performing a second conversion treatment so as to convert the third metallic layer into the other portion of the insulating and to form the other portion of the metallic layer penetrating through the insulating layer.
摘要翻译：在制造磁阻效应元件的方法中，该磁阻效应元件的磁化强度基本上沿一个方向固定，其中磁化按照外部磁场旋转的自由磁化层和间隔层，位于固定磁化层和自由磁化层之间，绝缘层和穿过绝缘层的金属层位于隔离层之间，形成第一金属层; 在第一金属层上形成第二金属层，以转化成绝缘层的一部分; 进行第一转换处理，以将第二金属层转换成绝缘层的部分，并形成贯穿绝缘层的金属层的一部分; 在绝缘层和通过第一转换处理形成的金属层上形成将被转换成绝缘层的另一部分的第三金属层; 并进行第二转换处理，以将第三金属层转换成绝缘体的另一部分，并形成贯穿绝缘层的金属层的另一部分。

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