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81. 发明授权

US07341969B2 Aluminum nitride sintered body 失效
标题翻译：氮化铝烧结体
公开(公告)号：US07341969B2
公开(公告)日：2008-03-11
申请号：US11234765
申请日：2005-09-23
申请人： Masuhiro Natsuhara , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： C04B35/581 , H05B3/36
CPC分类号： H05B3/143 , C04B35/62655 , C04B35/6303 , C04B2235/3225 , C04B2235/3895 , C04B2235/5409 , C04B2235/5445 , C04B2235/6584 , C04B2235/72 , C04B2235/721 , C04B2235/726 , C04B2235/963 , C04B2235/9692 , H05K1/0306
摘要： The object of the present invention is to provide a susceptor with superior thermal uniformity by minimizing pores in an aluminum nitride sintered body.In an aluminum nitride sintered body according to the present invention, the tin content and sulfur content are controlled so that they are no more than a fixed amount. More specifically, in an aluminum nitride sintered body having as its main component aluminum nitride, the tin content in the aluminum nitride sintered body is no more than 50 ppm and the sulfur content is no more than 100 ppm. It would be preferable for a resistance heating body to be formed in the aluminum nitride sintered body and it would be preferable for the aluminum nitride sintered body to be used as a semiconductor heating unit.
摘要翻译：本发明的目的是通过使氮化铝烧结体中的孔隙最小化来提供具有优良热均匀性的感受体。在根据本发明的氮化铝烧结体中，控制锡含量和硫含量，使其不超过固定量。更具体地说，在以氮化铝为主要成分的氮化铝烧结体中，氮化铝烧结体中的锡含量不超过50ppm，硫含量不大于100ppm。优选在氮化铝烧结体中形成电阻加热体，优选将氮化铝烧结体用作半导体加热单元。

82. 发明授权

US07306858B2 Aluminum nitride sintered body 失效
标题翻译：氮化铝烧结体
公开(公告)号：US07306858B2
公开(公告)日：2007-12-11
申请号：US11198009
申请日：2005-08-04
申请人： Masuhiro Natsuhara , Kenji Shinma , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Kenji Shinma , Hirohiko Nakata
IPC分类号： B32B9/00
CPC分类号： C04B35/581 , C04B35/62655 , C04B35/645 , C04B2235/3225 , C04B2235/5409 , C04B2235/5445 , C04B2235/608 , C04B2235/6584 , C04B2235/668 , C04B2235/72 , C04B2235/724 , C04B2235/963 , C04B2235/9692 , Y10T428/12736
摘要： In an aluminum nitride sintered body, the bismuth and chlorine contents are restricted to be no more than fixed amounts. More specifically, in an aluminum nitride sintered body having aluminum nitride as its main component, the bismuth content in the aluminum nitride sintered body is no more than 30 ppm and the chlorine content is no more than 100 ppm. It would be preferable to form a resistance heating body on the aluminum nitride sintered body, and it would be preferable for the aluminum nitride sintered body to be used as a semiconductor heating part.
摘要翻译：在氮化铝烧结体中，铋和氯的含量被限定为不大于固定量。更具体地说，在以氮化铝为主要成分的氮化铝烧结体中，氮化铝烧结体中的铋含量为30ppm以下，氯含量为100ppm以下。优选在氮化铝烧结体上形成电阻加热体，优选将氮化铝烧结体用作半导体加热部。

83. 发明申请

US20070029740A1 Body for keeping a wafer, method of manufacturing the same and device using the same 审中-公开
标题翻译：用于保持晶片的本体，其制造方法以及使用其的装置
公开(公告)号：US20070029740A1
公开(公告)日：2007-02-08
申请号：US11482101
申请日：2006-07-07
申请人： Masuhiro Natsuhara , Katsuhiro Itakura , Tomoyuki Awazu , Hirohiko Nakata , Akira Mikumo
发明人： Masuhiro Natsuhara , Katsuhiro Itakura , Tomoyuki Awazu , Hirohiko Nakata , Akira Mikumo
IPC分类号： B23B31/30
CPC分类号： H01L21/67109 , H01L21/67103 , Y10T279/11
摘要： A wafer holding body for placing a semiconductor wafer, a method of manufacturing the same, and an device using the wafer holding body are provided, wherein a channel is formed in the wafer holding body.
摘要翻译：提供了一种用于放置半导体晶片的晶片保持体，其制造方法和使用该晶片保持体的器件，其中在晶片保持体中形成沟道。

84. 发明申请

US20060289448A1 Heater for semiconductor manufacturing device and heating device equipped with the same 审中-公开
标题翻译：加热器用于半导体制造装置和加热装置配备相同
公开(公告)号：US20060289448A1
公开(公告)日：2006-12-28
申请号：US11283164
申请日：2005-11-21
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira
IPC分类号： H05B3/68
CPC分类号： H05B3/143 , H01L21/67109
摘要： A heater is provided with which the temperature distribution from cooling start to cooling end can be made more uniform, as well as an device provided which the same. The heater includes a heating surface for heating a heating-subject article that is placed on the heating surface or separated a fixed distance from it, a resistive heating element on a surface of or inside a base material constituting the heater, and an isothermal plate on a side opposite the heating surface. The material of the isothermal plate includes copper or a copper alloy, or alternatively aluminum or an aluminum alloy as a main component. Thus, the heater can suppress a temperature drop in the instant a cold wafer is placed on it, and can perform swift temperature recovery.
摘要翻译：提供了一种加热器，其可以使从冷却开始到冷却结束的温度分布更均匀，以及提供其的装置。加热器包括用于加热放置在加热表面上或与其隔开一定距离的受热物品的加热表面，构成加热器的基材的表面或内部的电阻加热元件和等温板与加热表面相对的一侧。等温板的材料包括铜或铜合金，或者以铝或铝合金为主要成分。因此，加热器可以抑制冷晶片放置在其上的瞬间的温度下降，并且可以执行快速的温度恢复。

85. 发明申请

US20060201918A1 Heater for semiconductor manufacturing device 审中-公开
标题翻译：半导体制造装置用加热器
公开(公告)号：US20060201918A1
公开(公告)日：2006-09-14
申请号：US11339430
申请日：2006-01-26
申请人： Tomoyuki Awazu , Hirohiko Nakata , Akira Kuibira
发明人： Tomoyuki Awazu , Hirohiko Nakata , Akira Kuibira
IPC分类号： B23K9/00 , B23K9/02
CPC分类号： H01L21/67103
摘要： A heater that enables a more even temperature distribution in the time from commencement of heating until completion of cooling, and a device is equipped with the same, are provided. The heater for a semiconductor fabrication device of the present invention comprises a substrate having a heating surface that heats an article to be processed that is placed thereupon or separated therefrom by a set distance and a resistive heating element. The heat capacity of the substrate forms a distribution within the substrate. The substrate, or a portion thereof, is preferably made from one type of metal or a composite of two or more types of metal.
摘要翻译：提供一种加热器，其能够在从开始加热到完成冷却的时间内实现更均匀的温度分布，并且装置配备有加热器。本发明的半导体制造装置的加热器包括具有加热表面的基板，该加热表面加热被放置在其上或与其隔开一定距离的待加工物品和电阻加热元件。衬底的热容量在衬底内形成分布。基材或其一部分优选由一种金属或两种或更多种金属的复合材料制成。

86. 发明申请

US20060201422A1 Workpiece Holder for Semiconductor Manufacturing Apparatus 审中-公开
标题翻译：半导体制造设备的工件架
公开(公告)号：US20060201422A1
公开(公告)日：2006-09-14
申请号：US11421490
申请日：2006-06-01
申请人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： B05C13/00
CPC分类号： H01L21/67103
摘要： Semiconductor-manufacturing-apparatus workpiece holder whose wafer-retaining surface is superior in temperature uniformity, and that is suitable for use in thermosetting of photolithographic photoresists in coater/developers, and in baking of low dielectric constant, i.e. low-k, insulating films. The workpiece holder is made up of a wafer holder 1, and a support member 4 that supports the wafer holder 1, and features the thermal conductivity of the support member 4 being lower than the thermal conductivity of the wafer holder 1. The wafer holder 1 and the support member 4 either are not joined, or if joined are made to have a difference in thermal expansion coefficient of 2.0×10−6/° C. or less. The chief component of the wafer holder 1 preferably is AlN, and of the support member 4, mullite.
摘要翻译：半导体制造装置的工件保持器，其晶片保持面的温度均匀性优异，适用于涂布机/显影剂中的光刻光刻胶的热固化，以及低介电常数即低k绝缘膜的烘烤。工件保持器由晶片保持器1和支撑晶片保持器1的支撑构件4构成，并且支撑构件4的热导率低于晶片保持器1的热导率。晶片保持器1 并且支撑构件4也不接合，或者如果接合的热膨胀系数差为2.0×10 -6 /℃以下。晶片保持器1的主要部件优选为AlN，并且支撑部件4为莫来石。

87. 发明申请

US20060116272A1 Aluminum nitride sintered body 失效
标题翻译：氮化铝烧结体
公开(公告)号：US20060116272A1
公开(公告)日：2006-06-01
申请号：US11234765
申请日：2005-09-23
申请人： Masuhiro Natsuhara , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： C04B35/581
CPC分类号： H05B3/143 , C04B35/62655 , C04B35/6303 , C04B2235/3225 , C04B2235/3895 , C04B2235/5409 , C04B2235/5445 , C04B2235/6584 , C04B2235/72 , C04B2235/721 , C04B2235/726 , C04B2235/963 , C04B2235/9692 , H05K1/0306
摘要： The object of the present invention is to provide a susceptor with superior thermal uniformity by minimizing pores in an aluminum nitride sintered body. In an aluminum nitride sintered body according to the present invention, the tin content and sulfur content are controlled so that they are no more than a fixed amount. More specifically, in an aluminum nitride sintered body having as its main component aluminum nitride, the tin content in the aluminum nitride sintered body is no more than 50 ppm and the sulfur content is no more than 100 ppm. It would be preferable for a resistance heating body to be formed in the aluminum nitride sintered body and it would be preferable for the aluminum nitride sintered body to be used as a semiconductor heating unit.
摘要翻译：本发明的目的是通过使氮化铝烧结体中的孔隙最小化来提供具有优良热均匀性的感受体。在根据本发明的氮化铝烧结体中，控制锡含量和硫含量，使其不超过固定量。更具体地说，在以氮化铝为主要成分的氮化铝烧结体中，氮化铝烧结体中的锡含量不超过50ppm，硫含量不大于100ppm。优选在氮化铝烧结体中形成电阻加热体，优选将氮化铝烧结体用作半导体加热单元。

88. 发明申请

US20060063024A1 Metallized substrate 审中-公开
标题翻译：金属化基板
公开(公告)号：US20060063024A1
公开(公告)日：2006-03-23
申请号：US11222037
申请日：2005-09-09
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Fumio Otsuji
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Fumio Otsuji
IPC分类号： C25D1/08 , B21D39/00 , B32B15/04 , C03C27/02
CPC分类号： C03C17/09 , C03C2217/77 , C23C4/06 , C23C4/12 , H01L2924/0002 , H05K1/0306 , H05K3/14 , H05K2203/1344 , Y10T428/12361 , Y10T428/12535 , Y10T428/12576 , Y10T428/12611 , H01L2924/00
摘要： The present invention provides a metallized substrate that has little warping and a fine, smooth surface. In the metallized substrate of the present invention, a conductive film is formed by spraying on the surface of a ceramic substrate or a composite substrate of a ceramic and a metal. The surface roughness of the conductive film formed by the spraying is preferably Ra≦1.0 μm. The surface of the conductive film may be a machined surface. The spraying is preferably arc spraying, plasma spraying, or flame spraying.
摘要翻译：本发明提供一种金属化基板，其具有很小的翘曲和细小的光滑表面。在本发明的金属化基板中，通过喷涂在陶瓷基板或陶瓷和金属的复合基板的表面上形成导电膜。通过喷雾形成的导电膜的表面粗糙度优选为Ra <1.0μm。导电膜的表面可以是加工表面。喷涂优选是电弧喷涂，等离子喷涂或火焰喷涂。

89. 发明申请

US20060037857A1 Workpiece holder for processing apparatus, and processing apparatus using the same 有权
标题翻译：用于处理装置的工件支架及使用其的处理装置
公开(公告)号：US20060037857A1
公开(公告)日：2006-02-23
申请号：US11249433
申请日：2005-10-14
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira
IPC分类号： C25D17/06
CPC分类号： H01L21/6831
摘要： An inexpensive workpiece holder having high reliability and a processing apparatus equipped with the workpiece holder are provided, in which damage caused by oxygen in the air is prevented. The holder comprises: a ceramic body which has an electrode and a heater circuit and which can holds a workpiece; a tubular member having an end portion connected to the ceramic body; a sealing member which is disposed inside the tubular member and which isolates a space inside the tubular member into two regions: a region on the first end portion (“sealed portion”) and a region on the opposite side (“opposite region”); and power supply conductive members which extend from the opposite region side, penetrating the sealing member to the sealed region side, and which are electrically connected to the electrode and the heater circuit.
摘要翻译：提供了具有高可靠性的便宜的工件保持器和配备有工件保持器的处理装置，其中防止了由空气中的氧引起的损伤。保持器包括：陶瓷体，其具有电极和加热器电路，并且可以保持工件; 管状构件，其具有连接到所述陶瓷体的端部; 密封构件，其设置在所述管状构件的内部，并且将所述管状构件内部的空间隔离成两个区域：所述第一端部（“密封部”）上的区域和相对侧（“相对区域”）上的区域。以及从相对区域侧延伸穿过密封构件到密封区域侧并且与电极和加热器电路电连接的电源导电构件。

90. 发明申请

US20050242078A1 Ceramic Susceptor 有权
标题翻译：陶瓷受体
公开(公告)号：US20050242078A1
公开(公告)日：2005-11-03
申请号：US11160825
申请日：2005-07-12
申请人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H01L21/00 , H05B3/26 , H05B3/68
CPC分类号： H01L21/67103 , H05B3/265
摘要： Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is formed. Fluctuation in pullback length L between sintered ceramic body outer-peripheral edge 1a and resistive heating element substantive-domain outer-peripheral edge 2a is within ±0.8%, while isothermal rating of the entire surface of the wafer-retaining face is ±1.0% or less. Preferable is a superior isothermal rating of ±0.5% or less that can be achieved by bringing the fluctuation in pullback length L to within ±0.5%.
摘要翻译：其晶片保持面具有优异的等温性能，适用于半导体制造装置和液晶制造装置的陶瓷基座。在板状烧结陶瓷体1中，形成电阻加热元件2。烧结陶瓷体外周边缘1a和电阻加热元件本体外缘边缘2a之间的回拉长度L的波动在±0.8％以内，而晶片保持面的整个表面的等温额定值为±1.0 ％或更少。优选的等温额定值为±0.5％以下，通过使拉回长度L的波动在±0.5％以内可以实现。

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