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81. 发明授权

US07200037B2 Spin-injection FET 有权
公开(公告)号：US07200037B2
公开(公告)日：2007-04-03
申请号：US11255101
申请日：2005-10-21
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/115 , H01L29/66984 , H01L29/7881
摘要： An spin-injection FET includes a first ferromagnetic body whose magnetization direction is fixed, a second ferromagnetic body whose magnetization direction is changed by spin-injection current, a gate electrode which is formed on a channel between the first and second ferromagnetic bodies, a first driver/sinker which controls a direction of the spin-injection current to determine the magnetization direction of the second ferromagnetic body, the spin-injection current being passed through the channel, a wiring through which assist current is passed, the assist current generating a magnetic field in a magnetization easy axis direction of the second ferromagnetic body, and a second driver/sinker which controls the direction of the assist current passed through the conductive line.

82. 发明申请

US20070007610A1 Magneto-resistive effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US20070007610A1
公开(公告)日：2007-01-11
申请号：US11521516
申请日：2006-09-15
申请人： Yoshiaki Saito , Hideyuki Sugiyama
发明人： Yoshiaki Saito , Hideyuki Sugiyama
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/16 , H01L27/228
摘要： It is possible to perform a writing operation with low power consumption and a low current, and enhance reliability without causing element breakdown. There are provided a first magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned; a second magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned; a magnetic recording layer formed between the first magnetization-pinned layer and the second magnetization-pinned layer and including at least one magnetic film in which a magnetization direction is changeable by injecting spin-polarized electrons; a tunnel barrier layer formed between the first magnetization-pinned layer and the magnetic recording layer; and a nonmagnetic intermediate layer formed between the magnetic recording layer and the second magnetization-pinned layer. The magnetization direction of the magnetic film of the first magnetization-pinned layer on the magnetic recording layer side is substantially anti-parallel to the magnetization direction of the magnetic film of the second magnetization-pinned layer on the magnetic recording layer side.
摘要翻译：可以执行低功耗和低电流的写入操作，并且可以在不引起元件故障的情况下提高可靠性。提供了包括磁化方向被固定的至少一个磁性膜的第一磁化固定层; 第二磁化固定层，其包括其中磁化方向被钉扎的至少一个磁性膜; 形成在第一磁化固定层和第二磁化固定层之间的磁记录层，并且包括通过注入自旋极化电子而使磁化方向可变化的至少一个磁性膜; 形成在第一磁化固定层和磁记录层之间的隧道势垒层; 以及形成在磁记录层和第二磁化固定层之间的非磁性中间层。磁记录层侧的第一磁化固定层的磁性膜的磁化方向基本上与磁记录层侧的第二磁化固定层的磁性膜的磁化方向反平行。

83. 发明申请

US20070007609A1 Magnetoresistive effect element and magnetic memory 审中-公开
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US20070007609A1
公开(公告)日：2007-01-11
申请号：US11368383
申请日：2006-03-07
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
IPC分类号： H01L43/00 , H01L29/82 , G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： G11C11/15 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01L43/08
摘要： It is made possible to provide a highly reliable magnetoresistive effect element and a magnetic memory that operate with low power consumption and current writing and without element destruction. The magnetoresistive effect element includes a first magnetization pinned layer comprising at least one magnetic layer and in which a magnetization direction is pinned, a magnetization free layer in which a magnetization direction is changeable, a tunnel barrier layer provided between the first magnetization pinned layer and the magnetization free layer, a non-magnetic metal layer provided on a first region in an opposite surface of the magnetization free layer from the tunnel barrier layer, a dielectric layer provided on a second region other than the first region in the opposite surface of the magnetization free layer from the tunnel barrier layer; and a second magnetization pinned layer provided to cover opposite surfaces of the non-magnetic metal layer and the dielectric layer from the magnetization free layer.
摘要翻译：可以提供高可靠性的磁阻效应元件和磁存储器，其以低功耗和电流写入操作，并且不会损坏元件。磁阻效应元件包括包含至少一个磁性层并且其中磁化方向被钉扎的第一磁化固定层，其中磁化方向可变的磁化自由层，设置在第一磁化固定层和第二磁化层之间的隧道势垒层磁化自由层，非磁性金属层，设置在磁化自由层的与隧道势垒层相反的表面的第一区域上，介电层设置在第二区域之外，该第二区域与磁化相反的表面中的第一区域自由层从隧道势垒层; 以及第二磁化固定层，其设置成覆盖非磁性金属层和电介质层与磁化自由层的相对表面。

84. 发明申请

US20060146451A1 Magnetoresistive element and magnetic memory device 有权
公开(公告)号：US20060146451A1
公开(公告)日：2006-07-06
申请号：US11367483
申请日：2006-03-06
申请人： Koichiro Inomata , Kentaro Nakajima , Yoshiaki Saito , Masayuki Sagoi , Tatsuya Kishi
发明人： Koichiro Inomata , Kentaro Nakajima , Yoshiaki Saito , Masayuki Sagoi , Tatsuya Kishi
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L27/224 , H01L43/08 , Y10T428/1121 , Y10T428/115
摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

85. 发明授权

US07023725B2 Magnetic memory 失效
标题翻译：磁记忆
公开(公告)号：US07023725B2
公开(公告)日：2006-04-04
申请号：US10864522
申请日：2004-06-10
申请人： Yoshiaki Saito , Tomomasa Ueda , Tatsuya Kishi , Minoru Amano
发明人： Yoshiaki Saito , Tomomasa Ueda , Tatsuya Kishi , Minoru Amano
IPC分类号： G11C7/00
CPC分类号： G11C11/15
摘要： There are provided at least one wire, a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire, and first yokes provided so as to be spaced from at least one pair of opposed side faces of the magnetoresistive effect element to form a magnetic circuit in cooperation with the magnetoresistive effect element when a current is caused to flow in the wire. Each of the first yokes has at least two soft magnetic layers which are stacked via a non-magnetic layer.
摘要翻译：提供了至少一根导线，一个磁阻效应元件，其具有存储层，其磁化方向根据通过使电流在线中流动而产生的电流磁场而变化，并且第一磁轭设置成与至少一个磁阻效应元件的一对相对的侧面，当电流在电线中流动时与磁阻效应元件协同地形成磁路。每个第一轭具有至少两个通过非磁性层堆叠的软磁性层。

86. 发明申请

US20050282379A1 Spin transistor, programmable logic circuit, and magnetic memory 有权
标题翻译：旋转晶体管，可编程逻辑电路和磁存储器
公开(公告)号：US20050282379A1
公开(公告)日：2005-12-22
申请号：US11149267
申请日：2005-06-10
申请人： Yoshiaki Saito , Hideyuki Sugiyama
发明人： Yoshiaki Saito , Hideyuki Sugiyama
IPC分类号： G11C11/16 , H01L21/00 , H01L21/4763 , H01L21/8246 , H01L27/01 , H01L27/12 , H01L27/22 , H01L29/66 , H01L29/82 , H01L31/0392
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , H01L29/66984 , Y10S977/932 , Y10S977/933 , Y10S977/936
摘要： A spin transistor includes a first conductive layer that is made of a ferromagnetic material magnetized in a first direction, and functions as one of a source and a drain; a second conductive layer that is made of a ferromagnetic material magnetized in one of the first direction and a second direction that is antiparallel with respect to the first direction, and functions as the other one of the source and the drain. The spin transistor also includes a channel region that is located between the first conductive layer and the second conductive layer, and introduces electron spin between the first conductive layer and the second conductive layer; a gate electrode that is located above the channel region; and a tunnel barrier film that is located between the channel region and at least one of the first conductive layer and the second conductive layer.
摘要翻译：自旋晶体管包括由沿第一方向磁化的铁磁材料制成的第一导电层，并且用作源极和漏极之一; 第二导电层，其由在相对于第一方向反平行的第一方向和第二方向中的一个中被磁化的铁磁材料制成，并且用作源极和漏极中的另一个。自旋晶体管还包括位于第一导电层和第二导电层之间的沟道区，并且在第一导电层和第二导电层之间引入电子自旋; 位于通道区域上方的栅电极; 以及位于所述沟道区域和所述第一导电层和所述第二导电层中的至少一个之间的隧道势垒膜。

87. 发明申请

US20050078418A1 Ferromagnetic double tunnel junction element with asymmetric energy band 有权
标题翻译：具有不对称能带的铁磁双隧道结元件
公开(公告)号：US20050078418A1
公开(公告)日：2005-04-14
申请号：US10968336
申请日：2004-10-20
申请人： Yoshiaki Saito , Masayuki Sagoi , Minoru Amano , Kentaro Nakajima , Shigeki Takahashi , Tatsuya Kishi
发明人： Yoshiaki Saito , Masayuki Sagoi , Minoru Amano , Kentaro Nakajima , Shigeki Takahashi , Tatsuya Kishi
IPC分类号： G01R33/09 , G11B5/39 , G11C11/14 , G11C11/15 , G11C11/16 , H01F10/26 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08 , G11B5/33 , G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11B5/3954 , G11C11/15 , G11C11/16 , H01L27/224 , H01L27/228
摘要： There is provided a magnetoresistance effect element including a first pinned ferromagnetic layer, a second pinned ferromagnetic layer facing the first pinned ferromagnetic layer, surface regions of the first and second pinned ferromagnetic layer facing each other being different from each other in composition, a free ferromagnetic layer intervening between the first and second pinned ferromagnetic layers, a first tunnel barrier layer intervening between the first pinned ferromagnetic layer and the free ferromagnetic layer, and a second tunnel barrier layer intervening between the second pinned ferromagnetic layer and the free ferromagnetic layer.
摘要翻译：提供了一种磁阻效应元件，包括第一被钉扎铁磁层，面对第一被钉扎铁磁层的第二钉扎铁磁层，第一和第二钉扎铁磁层彼此面对的表面区域在组成上彼此不同，自由铁磁性介于第一和第二被钉扎铁磁层之间的介电层，介于第一被钉扎铁磁层和自由铁磁层之间的第一隧道势垒层以及介于第二钉扎铁磁层与自由铁磁层之间的第二隧道势垒层。

88. 发明授权

US06873023B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US06873023B2
公开(公告)日：2005-03-29
申请号：US10418047
申请日：2003-04-18
申请人： Yoshiaki Asao , Yoshihisa Iwata , Yoshiaki Saito , Hiroaki Yoda , Tomomasa Ueda , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi
发明人： Yoshiaki Asao , Yoshihisa Iwata , Yoshiaki Saito , Hiroaki Yoda , Tomomasa Ueda , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi
IPC分类号： G11C11/16 , H01L43/00
CPC分类号： G11C11/16
摘要： A write word line is disposed right under an MTJ element. The write word line extends in an X direction, and a lower surface of the line is coated with a yoke material which has a high permeability. A data selection line (read/write bit line) is disposed right on the MTJ element. A data selection line extends in a Y direction intersecting with the X direction, and an upper surface of the line is coated with the yoke material which has the high permeability. At a write operation time, a magnetic field generated by a write current flowing through a write word line B and data selection line functions on the MTJ element by the yoke material with good efficiency.
摘要翻译：写字线被放置在MTJ元素的正下方。写字线在X方向上延伸，并且线的下表面涂覆有具有高磁导率的磁轭材料。数据选择线（读/写位线）设置在MTJ元件上。数据选择线在与X方向交叉的Y方向上延伸，并且线的上表面涂覆有具有高磁导率的磁轭材料。在写操作时刻，通过写入字线B和数据选择线产生的写入电流产生的磁场通过磁轭材料以良好的效率在MTJ元件上起作用。

89. 发明授权

US06868002B2 Magnetic memory with reduced write current 失效
标题翻译：具有减小写入电流的磁记忆体
公开(公告)号：US06868002B2
公开(公告)日：2005-03-15
申请号：US10771537
申请日：2004-02-05
申请人： Yoshiaki Saito , Koichiro Inomata , Minoru Amano , Kentaro Nakajima , Masayuki Sagoi , Tatsuya Kishi , Shigeki Takahashi
发明人： Yoshiaki Saito , Koichiro Inomata , Minoru Amano , Kentaro Nakajima , Masayuki Sagoi , Tatsuya Kishi , Shigeki Takahashi
IPC分类号： G11C11/14 , G11C11/15 , H01F10/16 , H01F10/26 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/15 , H01F10/3231 , H01L27/224 , H01L27/228
摘要： There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.
摘要翻译：提供了一种磁存储器，包括彼此相交并彼此分开布置的第一和第二布线，位于第一和第二布线之间的磁阻效应膜，以及第一磁性膜，其包括面向磁阻效应膜的第一部分，其具有第一插入其间的布线和位于第一布线的两侧并与第一部分磁连接的一对第二部分，第一和第二部分中的每一个具有包含钴的高饱和磁化软磁材料和金属非金属纳米颗粒膜。

90. 发明申请

US20050041456A1 Magneto-resistive effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US20050041456A1
公开(公告)日：2005-02-24
申请号：US10886547
申请日：2004-07-09
申请人： Yoshiaki Saito
发明人： Yoshiaki Saito
IPC分类号： G11C11/15 , G11C11/16 , G11C11/22 , H01F10/14 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
CPC分类号： H01L43/08 , G11C11/16 , H01L27/228
摘要： It is possible to obtain excellent heat stability even though the element is miniaturized and keep stable magnetic domains even though switching is repeated any number of times. A magneto-resistive effect element includes: a magnetization-pinned layer including a magnetic film having a spin moment oriented in a direction perpendicular to a film surface thereof and pinned in the direction; a magnetic recording layer having a spin moment oriented in a direction perpendicular to a film surface thereof; a nonmagnetic layer formed between the magnetization-pinned layer and the magnetic recording layer; and an anti-ferromagnetic film formed on at least side surfaces of the magnetization-pinned layer.
摘要翻译：即使元件小型化并且即使重复任意次数也保持稳定的磁畴，可以获得优异的热稳定性。磁阻效应元件包括：磁化钉扎层，其包括具有在垂直于其膜表面的方向上定向的旋转力矩的磁性膜，并沿着该方向固定; 具有在垂直于其膜表面的方向上定向的旋转力矩的磁记录层; 形成在磁化固定层和磁记录层之间的非磁性层; 以及形成在所述磁化钉扎层的至少侧表面上的反铁磁膜。

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