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81. 发明授权

US08502979B2 Methods and systems for determining a critical dimension and overlay of a specimen 有权
标题翻译：用于确定试样的临界尺寸和覆盖层的方法和系统
公开(公告)号：US08502979B2
公开(公告)日：2013-08-06
申请号：US13467042
申请日：2012-05-09
申请人： Ady Levy , Kyle A. Brown , Rodney Smedt , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden , Ibrahim Abdul-Halim
发明人： Ady Levy , Kyle A. Brown , Rodney Smedt , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden , Ibrahim Abdul-Halim
IPC分类号： G01B11/00 , G01B11/30 , G01B11/14 , G01B11/28
CPC分类号： G01N21/27 , G01N21/211 , G01N21/47 , G01N21/636 , G01N21/64 , G01N21/9501 , G01N21/956 , G01N2021/646 , G01N2021/8825 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70658 , G03F7/707 , G03F7/70708 , H01J2237/31701 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
摘要翻译：提供了用于监测半导体制造工艺的方法和系统。系统可以包括被配置为支撑样本并耦合到测量装置的台。测量装置可以包括照明系统和检测系统。照明系统和检测系统可以被配置为使得系统可以被配置为确定样本的多个属性。例如，系统可以被配置为确定样本的多个属性，包括但不限于临界尺寸和重叠错位; 缺陷和薄膜特性; 临界尺寸和缺陷; 临界尺寸和薄膜特性; 临界尺寸，薄膜特性和缺陷; 宏观缺陷和微缺陷; 平整度，薄膜特性和缺陷; 重叠错位和平整度; 植入物特征和缺陷; 附着力和厚度。以这种方式，测量装置可以执行多个光学和/或非光学测量和/或检查技术。

82. 发明授权

US08330281B2 Overlay marks, methods of overlay mark design and methods of overlay measurements 有权
标题翻译：叠加标记，叠加标记设计方法和覆盖测量方法
公开(公告)号：US08330281B2
公开(公告)日：2012-12-11
申请号：US11830782
申请日：2007-07-30
申请人： Mark Ghinovker , Michael Adel , Walter Dean Mieher , Ady Levy , Dan Wack
发明人： Mark Ghinovker , Michael Adel , Walter Dean Mieher , Ady Levy , Dan Wack
IPC分类号： H01L23/544
CPC分类号： G03F7/70633 , G03F9/7076 , G06K9/00281 , G06T7/0004 , G06T7/33 , G06T2207/30148 , Y10S438/975
摘要： An overlay mark for determining the relative shift between two or more successive layers of a substrate is disclosed. The overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.
摘要翻译：公开了用于确定衬底的两个或更多个连续层之间的相对位移的重叠标记。覆盖标记包括至少一个测试图案，用于确定在第一方向上的基板的第一和第二层之间的相对移动。测试模式包括第一组工作区和第二组工作区。第一组工作区域设置在基板的第一层上，并且具有相对于彼此对角地相对且空间上偏移的至少两个工作区域。所述第二组工作区域设置在所述基板的第二层上，并且具有至少两个工作区域，所述至少两个工作区域相对于彼此对角地相对并且在空间上偏移。第一组工作区域通常相对于第二组工作区域成角度，从而形成X形测试图案。

83. 发明授权

US07876440B2 Apparatus and methods for detecting overlay errors using scatterometry 有权
标题翻译：使用散射法检测重叠误差的装置和方法
公开(公告)号：US07876440B2
公开(公告)日：2011-01-25
申请号：US12505311
申请日：2009-07-17
申请人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael E. Adel , Anatoly Fabrikant
发明人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael E. Adel , Anatoly Fabrikant
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are apparatus and methods for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample. Targets A, B, C and D that each include a portion of the first and second structures are provided. The target A is designed to have an offset Xa between its first and second structures portions; the target B is designed to have an offset Xb between its first and second structures portions; the target C is designed to have an offset Xc between its first and second structures portions; and the target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is different from zero, and Xa is an opposite sign and differ from Xb.
摘要翻译：公开了用于确定样品的第一层中的多个第一结构与样品的第二层中的多个第二结构之间的叠层的装置和方法。提供了各自包括第一和第二结构的一部分的目标A，B，C和D。目标A设计成在其第一和第二结构部分之间具有偏移Xa; 目标B被设计成在其第一和第二结构部分之间具有偏移Xb; 目标C被设计成在其第一和第二结构部分之间具有偏移Xc; 并且目标D被设计成在其第一和第二结构部分之间具有偏移Xd。偏移量Xa，Xb，Xc和Xd中的每一个与零不同，并且Xa是相反的符号，并且与Xb不同。

84. 发明授权

US07751046B2 Methods and systems for determining a critical dimension and overlay of a specimen 有权
标题翻译：用于确定试样的临界尺寸和覆盖层的方法和系统
公开(公告)号：US07751046B2
公开(公告)日：2010-07-06
申请号：US10401242
申请日：2003-03-27
申请人： Ady Levy , Kyle A. Brown , Rodney Smedt , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden , Ibrahim Abdulhalim
发明人： Ady Levy , Kyle A. Brown , Rodney Smedt , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden , Ibrahim Abdulhalim
IPC分类号： G01B11/00 , G01N21/00 , G01B11/30 , G01B11/14 , G01B11/02
CPC分类号： G01N21/27 , G01N21/211 , G01N21/47 , G01N21/636 , G01N21/64 , G01N21/9501 , G01N21/956 , G01N2021/646 , G01N2021/8825 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70658 , G03F7/707 , G03F7/70708 , H01J2237/31701 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, critical dimension and overlay misregistration. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
摘要翻译：提供了用于监测半导体制造工艺的方法和系统。系统可以包括被配置为支撑样本并耦合到测量装置的台。测量装置可以包括照明系统和检测系统。照明系统和检测系统可以被配置为使得系统可以被配置为确定样本的多个属性。例如，系统可以被配置为确定样本的多个属性，包括但不限于临界尺寸和重叠错位。以这种方式，测量装置可以执行多个光学和/或非光学测量和/或检查技术。

85. 发明授权

US07663753B2 Apparatus and methods for detecting overlay errors using scatterometry 有权
标题翻译：使用散射法检测重叠误差的装置和方法
公开(公告)号：US07663753B2
公开(公告)日：2010-02-16
申请号：US11963730
申请日：2007-12-21
申请人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Ken Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
发明人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Ken Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb; target C is designed to have an offset Xc; and target D is designed to have an offset Xd. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.
摘要翻译：公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。目标A设计成在其第一和第二结构部分之间具有偏移Xa; 目标B设计为具有偏移Xb; 目标C被设计为具有偏移Xc; 并且目标D被设计为具有偏移量Xd。偏移量Xa，Xb，Xc和Xd中的每一个优选地不同于零; Xa是相反的符号，不同于Xb; Xc是相反的符号，与Xd不同。目标A，B，C和D用电磁辐射照射，分别从目标A，B，C和D获得光谱SA，SB，SC和SD。然后使用基于获得的光谱SA，SB，SC和SD的线性近似来确定第一结构和第二结构之间的任何覆盖误差。

86. 发明授权

US07462814B2 Methods and systems for lithography process control 有权
标题翻译：光刻过程控制的方法和系统
公开(公告)号：US07462814B2
公开(公告)日：2008-12-09
申请号：US11345145
申请日：2006-02-01
申请人： Suresh Lakkapragada , Kyle A. Brown , Matt Hankinson , Ady Levy
发明人： Suresh Lakkapragada , Kyle A. Brown , Matt Hankinson , Ady Levy
IPC分类号： G06M7/00 , H01J40/14
CPC分类号： G03F7/70558 , G01N21/47 , G01N21/956 , G03F7/70625 , G03F7/70641 , H01L22/20 , H01L2924/0002 , Y10S414/135 , H01L2924/00
摘要： Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.
摘要翻译：提供了用于评估和控制光刻工艺的方法和系统。例如，用于减小光刻工艺的关键度量的晶片间变化的方法可以包括在光刻工艺期间测量设置在晶片上的抗蚀剂的至少一种性质。光刻工艺的关键度量可以包括但不限于在光刻工艺期间形成的特征的临界尺寸。该方法还可以包括改变被配置为执行光刻处理步骤的处理模块的至少一个参数以减少关键度量的晶片变化。响应于抗蚀剂的至少一个测量性质，可以改变工艺模块的参数。

87. 发明授权

US07460981B2 Methods and systems for determining a presence of macro and micro defects on a specimen 有权
标题翻译：用于确定样品上宏观和微观缺陷存在的方法和系统
公开(公告)号：US07460981B2
公开(公告)日：2008-12-02
申请号：US10974050
申请日：2004-10-26
申请人： Gary Bultman , Ady Levy , Kyle A. Brown , Mehrdad Nikoonahad , Dan Wack , John Fielden
发明人： Gary Bultman , Ady Levy , Kyle A. Brown , Mehrdad Nikoonahad , Dan Wack , John Fielden
IPC分类号： G06F19/00
CPC分类号： G03F7/70708 , G01N21/211 , G01N21/47 , G01N21/55 , G01N21/636 , G01N21/64 , G01N21/94 , G01N21/9501 , G01N21/9503 , G01N21/956 , G01N2021/646 , G01N2021/8825 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70658 , G03F7/707 , H01J2237/31701 , H01L22/12 , H01L2924/0002 , Y10T117/1004 , H01L2924/00
摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a presence of macro and micro defects. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
摘要翻译：提供了用于监测半导体制造工艺的方法和系统。系统可以包括被配置为支撑样本并耦合到测量装置的台。测量装置可以包括照明系统和检测系统。照明系统和检测系统可以被配置为使得系统可以被配置为确定样本的多个属性。例如，系统可以被配置为确定样本的多个属性，包括但不限于宏观和微缺陷的存在。以这种方式，测量装置可以执行多个光学和/或非光学测量和/或检查技术。

88. 发明授权

US07433040B2 Apparatus and methods for detecting overlay errors using scatterometry 有权
标题翻译：使用散射法检测重叠误差的装置和方法
公开(公告)号：US07433040B2
公开(公告)日：2008-10-07
申请号：US11830798
申请日：2007-07-30
申请人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael E. Adel , Anatoly Fabrikant , Christopher F. Bevis , Mark Ghinovker
发明人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael E. Adel , Anatoly Fabrikant , Christopher F. Bevis , Mark Ghinovker
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. An imaging optical system is used to measure a plurality of measured optical signals from a plurality of periodic targets on the sample. The targets each have a first structure in a first layer and a second structure in a second layer. There are predefined offsets between the first and second structures. A scatterometry overlay technique is then used to analyze the measured optical signals of the periodic targets and the predefined offsets of the first and second structures of the periodic targets to thereby determine an overlay error between the first and second structures of the periodic targets.
摘要翻译：公开了一种用于确定多层样品中至少两层之间的覆盖误差的方法。成像光学系统用于从样本上的多个周期性目标测量多个测量的光信号。目标各自具有第一层中的第一结构和第二层中的第二结构。在第一和第二结构之间有预定义的偏移。然后使用散射测量覆盖技术来分析周期性目标的测量光信号和周期性目标的第一和第二结构的预定偏移量，从而确定周期性目标的第一和第二结构之间的重叠误差。

89. 发明申请

US20080192221A1 METHOD FOR DETERMINING LITHOGRAPHIC FOCUS AND EXPOSURE 有权
标题翻译：用于确定光刻焦点和曝光的方法
公开(公告)号：US20080192221A1
公开(公告)日：2008-08-14
申请号：US12101757
申请日：2008-04-11
申请人： Walter Mieher , Thaddeus G. Dziura , Ady Levy , Chris A. Mack
发明人： Walter Mieher , Thaddeus G. Dziura , Ady Levy , Chris A. Mack
IPC分类号： G03B27/52 , G01J3/00
CPC分类号： G03F7/70625 , G03F7/70641
摘要： A method for determining one or more process parameter settings of a photolithographic system is disclosed.
摘要翻译：公开了一种用于确定光刻系统的一个或多个工艺参数设置的方法。

90. 发明授权

US07379183B2 Apparatus and methods for detecting overlay errors using scatterometry 有权
标题翻译：使用散射法检测重叠误差的装置和方法
公开(公告)号：US07379183B2
公开(公告)日：2008-05-27
申请号：US10785731
申请日：2004-02-23
申请人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael E. Adel , Christopher F. Bevis , Paola Dececco , John Fielden , Noah Bareket , Kenneth P. Gross , Mark Ghinovker
发明人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael E. Adel , Christopher F. Bevis , Paola Dececco , John Fielden , Noah Bareket , Kenneth P. Gross , Mark Ghinovker
IPC分类号： G01B11/00 , G01B11/02 , G01J4/00 , G01N21/55
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an optical system is employed to thereby measure an optical signal from each of the periodic targets. There are predefined offsets between the first and second structures. An overlay error is determined between the first and second structures by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets.
摘要翻译：公开了一种确定多层样本的两层之间的覆盖误差的方法。对于每个具有由第一层形成的第一结构和由第二层样品形成的第二结构的多个周期性目标，采用光学系统，从而测量来自每个周期性目标的光信号。在第一和第二结构之间有预定义的偏移。通过使用基于预定偏移的散射测量覆盖技术来分析来自周期性目标的所测量的光信号，在第一和第二结构之间确定覆盖误差。

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