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    • 86. 发明申请
    • MONITORING AN ELECTROPOLISHING PROCESS IN INTEGRATED CIRCUIT FABRICATION
    • 监控整合电路制造中的电镀工艺
    • WO2005055283A2
    • 2005-06-16
    • PCT/US2004/039748
    • 2004-11-26
    • ACM RESEARCH, INC.WANG, HuiYIP, HenryWANG, JianYU, Chaw-Chi
    • WANG, HuiYIP, HenryWANG, JianYU, Chaw-Chi
    • H01L
    • C25F3/16H01L22/14H01L22/26
    • An electropolishing process of a metal layer formed on a wafer used in integrated circuit fabrication includes rotating the wafer. As the wafer is rotated, a stream of electrolyte is applied through a nozzle to the metal layer at a first radial location on the wafer. The electropolishing process is monitored by measuring electrical resistance at the first radial location. The electrical resistance measured at the first radial location is compared to a first preset electrical resistance associated with the first radial location. An electropolishing charge applied at the first radial location is controlled based on the comparison of the electrical resistance measured at the first radial location to the first preset electrical resistance associated with the first radial location. After applying the stream of electrolyte at the first radial location, the stream of electrolyte is applied at a second radial location. Electrical resistance at the second radial location is measured. The electrical resistance measured at the second radial location is compared to a second preset electrical resistance, which is different than the first preset electrical resistance, associated with the second radial location. The electropolishing charge applied at the second radial location is controlled based on the comparison of the electrical resistance measured at the second radial location to the second preset electrical resistance associated with the second radial location.
    • 在用于集成电路制造的晶片上形成的金属层的电抛光工艺包括旋转晶片。 当晶片旋转时,电晶体流通过喷嘴在晶片上的第一径向位置处施加到金属层。 通过测量第一径向位置处的电阻来监测电抛光过程。 将在第一径向位置处测量的电阻与与第一径向位置相关联的第一预设电阻进行比较。 基于在第一径向位置处测量的电阻与与第一径向位置相关联的第一预设电阻的比较来控制施加在第一径向位置处的电抛光电荷。 在第一径向位置施加电解质流之后,在第二径向位置施加电解质流。 测量第二径向位置处的电阻。 将在第二径向位置处测量的电阻与与第二径向位置相关联的第一预设电阻不同的第二预设电阻进行比较。 基于在第二径向位置处测量的电阻与与第二径向位置相关联的第二预设电阻的比较来控制施加在第二径向位置处的电抛光电荷。