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    • 81. 发明授权
    • Shake correcting apparatus and method thereof in digital photographing apparatus
    • 振动校正装置及其方法在数字摄影装置中
    • US08373761B2
    • 2013-02-12
    • US12632957
    • 2009-12-08
    • Young-soo JangSung Park
    • Young-soo JangSung Park
    • H04N5/228
    • H04N5/23248G02B27/646
    • Provided are a method and apparatus for correcting a shake of a digital photographing apparatus. The method includes sensing a shake via an inertial sensor comprised in the digital photographing apparatus, and calculating a first shake value; comparing the first shake value with a predetermined threshold value and, when the first shake value is greater than the predetermined threshold value, driving an OIS (optical image stabilizer); detecting an edge component of an image of a target subject, wherein the image is input via an imaging device of the digital photographing apparatus, and calculating a second shake value from a difference value between edge values of sequential frames of the input image; and comparing the second shake value with the first shake value, and according to a result of the comparing, controlling a shake of the target subject to be corrected.
    • 提供了一种用于校正数字拍摄装置的抖动的方法和装置。 该方法包括通过包含在数字摄影装置中的惯性传感器来感测抖动,并且计算第一抖动值; 将第一抖动值与预定阈值进行比较,并且当第一抖动值大于预定阈值时,驱动OIS(光学图像稳定器); 检测目标被摄物体的图像的边缘分量,其中通过数字摄影装置的成像装置输入图像,并从输入图像的连续帧的边缘值之间的差值计算第二抖动值; 以及将所述第二抖动值与所述第一抖动值进行比较,并且根据所述比较的结果,控制要校正的目标对象的抖动。
    • 82. 发明申请
    • SHAKE CORRECTING APPARATUS AND METHOD THEREOF IN DIGITAL PHOTOGRAPHING APPARATUS
    • 数码摄影装置中的修正装置及其方法
    • US20100149352A1
    • 2010-06-17
    • US12632957
    • 2009-12-08
    • Young-soo JangSung Park
    • Young-soo JangSung Park
    • H04N5/228
    • H04N5/23248G02B27/646
    • Provided are a method and apparatus for correcting a shake of a digital photographing apparatus. The method includes sensing a shake via an inertial sensor comprised in the digital photographing apparatus, and calculating a first shake value; comparing the first shake value with a predetermined threshold value and, when the first shake value is greater than the predetermined threshold value, driving an OIS (optical image stabilizer); detecting an edge component of an image of a target subject, wherein the image is input via an imaging device of the digital photographing apparatus, and calculating a second shake value from a difference value between edge values of sequential frames of the input image; and comparing the second shake value with the first shake value, and according to a result of the comparing, controlling a shake of the target subject to be corrected.
    • 提供了一种用于校正数字拍摄装置的抖动的方法和装置。 该方法包括通过包含在数字摄影装置中的惯性传感器来感测抖动,并且计算第一抖动值; 将第一抖动值与预定阈值进行比较,并且当第一抖动值大于预定阈值时,驱动OIS(光学图像稳定器); 检测目标被摄物体的图像的边缘分量,其中通过数字摄影装置的成像装置输入图像,并从输入图像的连续帧的边缘值之间的差值计算第二抖动值; 以及将所述第二抖动值与所述第一抖动值进行比较,并且根据所述比较的结果,控制要校正的目标对象的抖动。
    • 84. 发明申请
    • SYSTEMS AND METHODS FOR COMMUNICATING PERSONAL INFORMATION
    • 用于传播个人信息的系统和方法
    • US20080120183A1
    • 2008-05-22
    • US11871512
    • 2007-10-12
    • Sung Park
    • Sung Park
    • G06Q30/00H04Q7/20
    • G06Q30/0273G06Q30/02G06Q30/0269G06Q30/0277H04L12/1859H04L51/14
    • In embodiments of the present invention improved capabilities are described for an information facility, where the information facility enables a first user to transmit personal information to a second user. The information facility may receive a first text message from an origin, and transmit a second text message to a destination. The first text message may contain information related to the destination, the origin may be associated with the personal information, and the second text message may contain the personal information. Additional communications with the origin and the destination may be associated with contextual advertisements, and may also enable the exchange of content associated with social networks. In addition, parental control may provide restrictions in association with the second text message.
    • 在本发明的实施例中,针对信息设施描述了改进的能力,其中信息设施使得第一用户能够向第二用户传送个人信息。 信息设施可以从原点接收第一文本消息,并将第二短信发送到目的地。 第一文本消息可以包含与目的地相关的信息,原点可以与个人信息相关联,并且第二文本消息可以包含个人信息。 与起点和目的地的附加通信可以与上下文广告相关联,并且还可以实现与社交网络相关联的内容的交换。 此外,家长控制可以提供与第二短信息相关联的限制。
    • 88. 发明申请
    • Static random access memory and method for manufacturing the same
    • 静态随机存取存储器及其制造方法
    • US20070158758A1
    • 2007-07-12
    • US11648381
    • 2006-12-28
    • Sung Park
    • Sung Park
    • H01L29/76
    • H01L27/1108H01L27/11Y10S257/903
    • Disclosed is a static random access memory (SRAM), which includes first and second access transistors composed of metal oxide semiconductor (MOS) transistors, first and second drive transistors composed of MOS transistors, and first and second p-channel thin film transistors (TFTs) used as pull-up devices. The SRAM includes a ground potential layer disposed as a common source of the first and second drive transistors, and formed by implanting a dopant into a semiconductor substrate, a power supply potential layer connected with sources of the first and second p-channel TFTs, and an insulating layer formed on the substrate and interposed between the ground potential layer and the power supply potential layer.
    • 公开了一种静态随机存取存储器(SRAM),其包括由金属氧化物半导体(MOS)晶体管组成的第一和第二存取晶体管,由MOS晶体管组成的第一和第二驱动晶体管,以及第一和第二p沟道薄膜晶体管 )用作上拉设备。 SRAM包括设置为第一和第二驱动晶体管的公共源的接地电位层,并且通过将掺杂剂注入半导体衬底,与第一和第二p沟道TFT的源极连接的电源电位层和 绝缘层,其形成在所述基板上并插入在所述接地电位层和所述电源电位层之间。
    • 90. 发明申请
    • Three-dimensional high voltage transistor and method for manufacturing the same
    • 三维高压晶体管及其制造方法
    • US20070012995A1
    • 2007-01-18
    • US11181561
    • 2005-07-13
    • Sung ParkLee Kim
    • Sung ParkLee Kim
    • H01L29/76
    • H01L29/76H01L29/66795H01L29/785
    • A method for manufacturing a three-dimensional high voltage transistor is disclosed. According to the method, lengths and widths of channels are increased while the reducing transistor forming area on plane, and semiconductor devices are completely separated from each other while restraining parasitic capacitance, latch-up phenomena, and formation of field transistors. The three-dimensional high voltage transistor includes an active area of the three-dimensional high voltage transistor formed in the form of a column on predetermined areas of a Silicon-On-Insulator substrate, source and drain formed in the active areas of the three-dimensional high voltage transistor in the depth direction, a channel area formed between the source and the drain in the depth direction, and a column-shaped gate formed at the side of the channel area on the Silicon-On-Insulator substrate.
    • 公开了一种用于制造三维高压晶体管的方法。 根据该方法,通道的长度和宽度增加,而平面上的还原晶体管形成区域和半导体器件彼此完全分离,同时抑制寄生电容,闭锁现象和场晶体管的形成。 三维高压晶体管包括在绝缘体上硅衬底的预定区域上形成为柱状形式的三维高压晶体管的有源区,源极和漏极形成在三维高压晶体管的有源区中, 深度方向上的二维高压晶体管,在深度方向上形成在源极和漏极之间的沟道区域,以及形成在绝缘体上硅衬底上的沟道区域侧的柱状栅极。