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    • 82. 发明授权
    • Laterally disposed nanostructures of silicon on an insulating substrate
    • 在绝缘基板上排列有硅的纳米结构
    • US6103540A
    • 2000-08-15
    • US185990
    • 1998-11-04
    • Stephen D. RussellRobert C. DynesPaul R. de la HoussayeWadad B. DubbeldayRandy L. ShimabukuroAndrew S. Katz
    • Stephen D. RussellRobert C. DynesPaul R. de la HoussayeWadad B. DubbeldayRandy L. ShimabukuroAndrew S. Katz
    • H01L31/0232H01L33/34H01L33/40H01L33/42H01L21/20
    • H01L33/42H01L31/02322H01L33/346H01L33/40Y10S438/962
    • A single crystal silicon film nanostructure capable of optical emission isaterally disposed on an insulating transparent substrate of sapphire. By laterally disposing the nanostructure, adequate support for the structure is provided, and the option of fabricating efficient electrical contact structures to the nanostructure is made possible. The method of the invention begins with the deposition of ultrathin layers of silicon on the substrate. A Solid Phase Epitaxy improvement process is then used to remove crystalline defects formed during the deposition. The silicon is then annealed and thinned using thermal oxidation steps to reduce its thickness to be on the order of five nanometers in height. The width and length of the nanostructure are defined by lithography. The nanometer dimensioned silicon is then spin-coated with a resist with width and length definition in the resist being performed by way of electron beam exposure. The photoresist is developed and the e-beam written pattern is transferred to the silicon by etching. Oxidations and etchings may subsequently be employed to further thin the width of the nanostructure to be on the order of two to three nanometers. The single crystal, silicon-based nanostructures can be made an integral part of silicon-based photo, electroluminescent, and quantum-effect devices all of which are compatible with current silicon manufacturing techniques and with other silicon-based microelectronics.
    • 能够发光的单晶硅膜纳米结构横向设置在蓝宝石的绝缘透明基板上。 通过横向设置纳米结构,提供了对结构的足够的支撑,并且使得能够对纳米结构制造有效的电接触结构的选择成为可能。 本发明的方法开始于在衬底上沉积超薄层的硅。 然后使用固相外延改进工艺去除沉积期间形成的结晶缺陷。 然后使用热氧化步骤对硅进行退火和减薄,以将其厚度减小到高达5纳米级。 纳米结构的宽度和长度由光刻法定义。 然后,通过电子束曝光来进行抗蚀剂的宽度和长度定义的抗蚀剂旋涂纳米尺寸的硅。 光致抗蚀剂被显影,并且电子束写入图案通过蚀刻转移到硅。 随后可以采用氧化和蚀刻来将纳米结构的宽度进一步减薄到二至三毫微数量级。 单晶硅基纳米结构可以制成硅基光电子,电致发光和量子效应器件的一个组成部分,所有这些都与当前的硅制造技术和其他硅基微电子器件兼容。
    • 85. 发明授权
    • Liquid level sensor and detector
    • 液位传感器和检测器
    • US5942748A
    • 1999-08-24
    • US806958
    • 1997-02-26
    • Stephen D. RussellWadad B. Dubbelday
    • Stephen D. RussellWadad B. Dubbelday
    • H01L31/0232H01L33/34H01L33/40H01L33/42H01L27/14H05B33/00
    • H01L31/02322H01L33/346H01L33/40H01L33/42
    • A light emitting photonic structure has a transparent substrate, such as sapphire, supporting a layer of group IV semiconductor material, such as silicon, having at least one porous region from which light is emitted as a response to a stimulus. An example of such a photonic structure is described in U.S. patent application Ser. No. 08/118,900. The photonic structure can be used to assess the presence of various fluids. The photonic structure is disposed to be contacted by the fluid to be sensed should it be present. The light emitting region of the photonic structure is stimulated by an appropriate source, and the light emitted by the photonic source is detected by a detector. The light emitting region of the photonic structure will emit a certain luminescence in air and should the light emitting region be contacted by other fluid or fluids, this luminescence can be affected and the corresponding change in luminescence can be detected thus the presence of these fluids can be sensed. Because the photonic structure has a light emitting region is formed on a transparent substrate, the light emitting region can be both excited and interrogated through the transparent substrate and outside of the presence of the fluid to be sensed. Hence absorption of the excitation radiation used as well as the luminescence emitted by the fluid to be sensed is eliminated.
    • 发光光子结构具有诸如蓝宝石的透明衬底,其支撑诸如硅的IV族半导体材料层,其具有作为对刺激的响应从其发射光的至少一个多孔区域。 这种光子结构的例子在美国专利申请序列号 第08 / 118,900号。 光子结构可用于评估各种流体的存在。 如果光子结构存在,光子结构被设置成被待感测的流体接触。 光子结构的发光区域被适当的光源刺激,并且由光子源发射的光由检测器检测。 光子结构的发光区域将在空气中发射一定的发光,并且如果发光区域被其他流体或流体接触,则该发光可能受到影响,并且可以检测到相应的发光变化,因此这些流体的存在可以 被感觉到。 由于光子结构在透明基板上形成有发光区域,所以可以通过透明基板激发和询问发光区域,并且在待检测流体的存在之外。 因此,消除了所使用的激发辐射的吸收以及待被感测的流体发射的发光。
    • 88. 发明授权
    • Tapered fiber amplifier
    • 锥形光纤放大器
    • US4941726A
    • 1990-07-17
    • US239158
    • 1988-08-31
    • Stephen D. RussellTimothy C. Stamnitz
    • Stephen D. RussellTimothy C. Stamnitz
    • G02B6/255G02B6/28H01S3/30
    • H01S3/302G02B6/2552G02B6/2821G02B6/2835
    • A tapered optical fiber amplifier is designed to provide for long-distance, un-repeatered fiber optic communications. Two single-mode fiber portions are tapered to efficiently intensify and couple an information signal from a laser diode and a pump signal at a shorter wavelength into a fused, tapered single-mode fiber optic coupler. The concentrated information signal and concentrated pump signal are combined via the coupler which is coupled to a several-kilometer length of a relatively small core diametered single-mode fiber to create a nonlinear optical effect (stimulated Raman scattering) (SRS). The SRS causes Raman shift of the pump signal to amplify the information signal, resulting in amplified signals that are efficiently coupled out of the relatively small core diametered optical fiber with another single-mode optical fiber taper portion. The tapered fiber portions launch the signal and pump light into the small core diametered single-mode fiber length, thereby generating SRS to result in a signal amplification and an efficient extraction of the amplified signal via the tapered output fiber portion or pigtail.
    • 锥形光纤放大器设计用于提供长距离,不重复的光纤通信。 两个单模光纤部分是锥形的,以有效地将来自激光二极管的信息信号和较短波长的泵浦信号耦合到融合的锥形单模光纤耦合器中。 集中的信息信号和集中的泵浦信号通过耦合器组合,该耦合器耦合到几公里长的相对小的芯径直径的单模光纤以产生非线性光学效应(受激拉曼散射)(SRS)。 SRS引起泵浦信号的拉曼移位以放大信息信号,从而产生被相对较小的核心直径光纤与另一个单模光纤锥形部分有效耦合的放大信号。 锥形纤维部分发射信号并将光泵送到小芯径直径单模光纤长度中,从而产生SRS以产生信号放大和通过锥形输出光纤部分或尾纤有效提取放大信号。