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    • 90. 发明申请
    • Crossbar-memory systems and methods for writing to and reading from crossbar memory junctions of crossbar-memory systems
    • 交叉存储器系统和用于写入和读取交叉存储器系统的交叉存储器结的方法
    • US20080089110A1
    • 2008-04-17
    • US11582208
    • 2006-10-16
    • Warren RobinettPhilip J. Kuekes
    • Warren RobinettPhilip J. Kuekes
    • G11C11/00
    • G11C13/02B82Y10/00G06F11/1008G06F11/1076G11C11/54G11C13/0023G11C13/004G11C13/0069G11C2013/0047G11C2013/0057G11C2013/009G11C2213/16G11C2213/77G11C2213/81
    • Various embodiments of the present invention are directed to crossbar-memory systems to methods for writing information to and reading information stored in such systems. In one embodiment of the present invention, a crossbar-memory system comprises a first layer of microscale signal lines, a second layer of microscale signal lines, a first layer of nanowires configured so that each first layer nanowire overlaps each first layer microscale signal line, and a second layer of nanowires configured so that each second layer nanowire overlaps each second layer microscale signal line and overlaps each first layer nanowire. The crossbar-memory system includes nonlinear-tunneling resistors configured to selectively connect first layer nanowires to first layer microscale signal lines and to selectively connect second layer nanowires to second layer microscale signal lines. The crossbar-memory system also includes nonlinear tunneling-hysteretic resistors configured to connect each first layer nanowire to each second layer nanowire at each crossbar intersection.
    • 本发明的各种实施例涉及交叉存储器系统,用于将信息写入和读取存储在这样的系统中的信息的方法。 在本发明的一个实施例中,交叉开关存储器系统包括微米级信号线的第一层,微米级信号线的第二层,被配置为使得每个第一层纳米线与每个第一层微米信号线重叠的第一纳米线层, 以及第二层纳米线,其被配置为使得每个第二层纳米线与每个第二层微米信号线重叠并且与每个第一层纳米线重叠。 交叉开关存储器系统包括非线性隧道电阻器,其被配置为选择性地将第一层纳米线连接到第一层微型信号线并且选择性地将第二层纳米线连接到第二层微量信号线。 交叉开关存储器系统还包括非线性隧道迟滞电阻器,其被配置为在每个交叉点交叉处将每个第一层纳米线连接到每个第二层纳米线。