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81. 发明申请

US20140322858A1 Solar Cells with Patterned Antireflective Surfaces 有权
标题翻译：带有图案抗反射表面的太阳能电池
公开(公告)号：US20140322858A1
公开(公告)日：2014-10-30
申请号：US14260687
申请日：2014-04-24
申请人： David H. Levy , Daniele Margadonna , Dennis Flood , Wendy G. Ahearn , Richard W. Topel, JR. , Theodore Zubil
发明人： David H. Levy , Daniele Margadonna , Dennis Flood , Wendy G. Ahearn , Richard W. Topel, JR. , Theodore Zubil
IPC分类号： H01L31/18
CPC分类号： H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Systems and methods for producing nanoscale textured low reflectivity surfaces may be utilized to fabricate solar cells. A substrate may be patterned with a resist prior to an etching process that produces a nanoscale texture on the surface of the substrate. Additionally, the substrate may be subjected to a dopant diffusion process. Prior to dopant diffusion, the substrate may be optionally subjected to liquid phase deposition to deposit a material that allows for patterned doping. The order of the nanoscale texture etching and dopant diffusion may be modified as desired to produce post-nano emitters or pre-nano emitters.
摘要翻译：用于生产纳米级织构的低反射率表面的系统和方法可用于制造太阳能电池。可以在蚀刻工艺之前用抗蚀剂图案化衬底，其在衬底的表面上产生纳米尺度的纹理。此外，可以对衬底进行掺杂剂扩散处理。在掺杂剂扩散之前，衬底可以任选地进行液相沉积以沉积允许图案化掺杂的材料。可以根据需要修改纳米尺度纹理蚀刻和掺杂剂扩散的顺序以产生纳米后发射体或预纳米发射体。

82. 发明申请

US20140065831A1 PATTERNED THIN FILM DIELECTRIC LAYER FORMATION 有权
标题翻译：图形薄膜电介质层
公开(公告)号：US20140065831A1
公开(公告)日：2014-03-06
申请号：US13600287
申请日：2012-08-31
申请人： Carolyn R. Ellinger , David H. Levy , Shelby F. Nelson
发明人： Carolyn R. Ellinger , David H. Levy , Shelby F. Nelson
IPC分类号： H01L21/308
CPC分类号： H01L31/1884 , H01L21/02178 , H01L21/022 , H01L21/0228 , H01L21/02301 , H01L21/02315 , H01L21/02565 , H01L21/02573 , H01L21/0262 , H01L21/32 , H01L29/42384 , H01L29/4908 , H01L31/0392 , H01L31/03926 , Y02E10/50
摘要： A method of producing an inorganic thin film dielectric material layer includes providing a substrate. A first inorganic thin film dielectric material layer is deposited on the substrate using an atomic layer deposition process. The first inorganic thin film dielectric material layer is treated after its deposition. A patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the deposition inhibiting material layer is not present using an atomic layer deposition process.
摘要翻译：无机薄膜电介质材料层的制造方法包括提供基板。使用原子层沉积工艺在衬底上沉积第一无机薄膜电介质材料层。第一种无机薄膜介电材料层在沉积后进行处理。在衬底上设置有图案化的沉积抑制材料层。使用原子层沉积工艺，在不存在沉积抑制材料层的基板的区域上选择性地沉积第二无机薄膜电介质材料层。

83. 发明申请

US20140065830A1 PATTERNED THIN FILM DIELECTRIC STACK FORMATION 有权
标题翻译：图形薄膜电介质堆积形成
公开(公告)号：US20140065830A1
公开(公告)日：2014-03-06
申请号：US13600274
申请日：2012-08-31
申请人： Carolyn R. Ellinger , David H. Levy , Shelby F. Nelson
发明人： Carolyn R. Ellinger , David H. Levy , Shelby F. Nelson
IPC分类号： H01L21/311
CPC分类号： H01L21/02348 , C23C16/04 , C23C16/45525 , H01L21/02178 , H01L21/022 , H01L21/0228 , H01L21/02299 , H01L21/02334 , H01L21/0234 , H01L29/4908
摘要： A method of producing a patterned inorganic thin film dielectric stack includes providing a substrate. A first patterned deposition inhibiting material layer is provided on the substrate. A first inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the first deposition inhibiting material layer is not present using an atomic layer deposition process. The first deposition inhibiting and first inorganic thin film dielectric material layers are simultaneously treated after deposition of the first inorganic thin film dielectric material layer. A second patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the second deposition inhibiting material layer is not present using an atomic layer deposition process. The first and second inorganic thin film dielectric material layers form a patterned inorganic thin film dielectric stack.
摘要翻译：制造图案化无机薄膜电介质叠层的方法包括提供基板。第一图案化沉积抑制材料层设置在基板上。使用原子层沉积工艺，在不存在第一沉积抑制材料层的基板的区域上选择性地沉积第一无机薄膜电介质材料层。在沉积第一无机薄膜电介质材料层之后，同时处理第一沉积抑制和第一无机薄膜电介质材料层。第二图案化的沉积抑制材料层设置在基板上。使用原子层沉积工艺，在不存在第二沉积抑制材料层的基板的区域上选择性地沉积第二无机薄膜电介质材料层。第一和第二无机薄膜电介质材料层形成图案化的无机薄膜电介质叠层。

84. 发明申请

US20140061649A1 HIGH PERFORMANCE THIN FILM TRANSISTOR 有权
标题翻译：高性能薄膜晶体管
公开(公告)号：US20140061649A1
公开(公告)日：2014-03-06
申请号：US13600323
申请日：2012-08-31
申请人： Shelby F. Nelson , Carolyn R. Ellinger , David H. Levy
发明人： Shelby F. Nelson , Carolyn R. Ellinger , David H. Levy
IPC分类号： H01L29/786
CPC分类号： H01L29/4908 , H01L29/66969 , H01L29/7869
摘要： A transistor includes a substrate; a gate including a first electrically conductive layer stack on the substrate; and a first inorganic thin film dielectric layer on the substrate with the first inorganic thin film dielectric layer having a first pattern. A second inorganic thin film dielectric layer, having a second pattern, is in contact with the first inorganic thin film dielectric layer. The first inorganic thin film dielectric layer and the second thin film dielectric layer have the same material composition. A third inorganic thin film dielectric layer has a third pattern. A semiconductor layer is in contact with and has the same pattern as the third inorganic thin film dielectric material layer. A source/drain includes a second electrically conductive layer stack.
摘要翻译：晶体管包括衬底; 栅极，包括在所述衬底上的第一导电层堆叠; 以及第一无机薄膜电介质层，其具有第一图案的第一无机薄膜电介质层。具有第二图案的第二无机薄膜电介质层与第一无机薄膜电介质层接触。第一无机薄膜电介质层和第二薄膜电介质层具有相同的材料组成。第三无机薄膜电介质层具有第三图案。半导体层与第三无机薄膜电介质材料层接触并具有相同的图案。源极/漏极包括第二导电层堆叠。

85. 发明申请

US20140061648A1 THIN FILM TRANSISTOR INCLUDING DIELECTRIC STACK 审中-公开
标题翻译：薄膜晶体管，包括电介质堆叠
公开(公告)号：US20140061648A1
公开(公告)日：2014-03-06
申请号：US13600308
申请日：2012-08-31
申请人： David H. Levy , Carolyn R. Ellinger , Shelby F. Nelson
发明人： David H. Levy , Carolyn R. Ellinger , Shelby F. Nelson
IPC分类号： H01L29/786
CPC分类号： H01L29/4908
摘要： A transistor includes a substrate; a gate including a first electrically conductive layer stack on the substrate; and a first inorganic thin film dielectric layer on the substrate with the first inorganic thin film dielectric layer having a first pattern. A second inorganic thin film dielectric layer, having a second pattern, is in contact with the first inorganic thin film dielectric layer. The first inorganic thin film dielectric layer and the second thin film dielectric layer have the same material composition. A semiconductor layer has a third pattern. A source/drain includes a second electrically conductive layer stack.
摘要翻译：晶体管包括衬底; 栅极，包括在所述衬底上的第一导电层堆叠; 以及第一无机薄膜电介质层，其具有第一图案的第一无机薄膜电介质层。具有第二图案的第二无机薄膜电介质层与第一无机薄膜电介质层接触。第一无机薄膜电介质层和第二薄膜电介质层具有相同的材料组成。半导体层具有第三图案。源/漏包括第二导电层堆叠。

86. 发明授权

US08664673B2 Multicolored mask process for making display circuitry 有权
标题翻译：用于制作显示电路的多彩蒙版工艺
公开(公告)号：US08664673B2
公开(公告)日：2014-03-04
申请号：US13410342
申请日：2012-03-02
申请人： Lyn M. Irving , David H. Levy , Lan B. Thai
发明人： Lyn M. Irving , David H. Levy , Lan B. Thai
IPC分类号： H01L33/62
CPC分类号： H01L27/1288 , G03F7/2022 , H01L27/1214 , H01L27/1225 , H01L27/3244 , H01L29/66765 , H01L29/7869 , H01L2227/323 , Y10T428/24802
摘要： A process for forming a pixel circuit is disclosed comprising: (a) providing a transparent support; (b) forming a multicolor mask having at least four different color patterns; (c) forming integrated electronic components of the pixel circuit having at least four layers of patterned functional material comprising a first conductor, a dielectric, a semiconductor, and a second conductor each layer of patterned functional material corresponding to the four different color patterns of the multicolor mask. The functional material is patterned using a photopattern corresponding to each color pattern.
摘要翻译：公开了一种用于形成像素电路的工艺，包括：（a）提供透明支撑体; （b）形成具有至少四种不同颜色图案的多色蒙版; （c）形成像素电路的集成电子部件，其具有至少四层图案化的功能材料，其包括第一导体，电介质，半导体和第二导体，每层图案化的功能材料层对应于四个不同颜色图案多色面膜使用对应于每个颜色图案的光图案来对功能材料进行图案化。

87. 发明申请

US20120219712A1 DELIVERY DEVICE FOR DEPOSITION 有权
标题翻译：递送装置用于沉积
公开(公告)号：US20120219712A1
公开(公告)日：2012-08-30
申请号：US13466507
申请日：2012-05-08
申请人： Roger S. Kerr , David H. Levy , James T. Murray
发明人： Roger S. Kerr , David H. Levy , James T. Murray
IPC分类号： C23C16/455 , F15D1/02 , B23P11/00
CPC分类号： B05B1/005 , C23C16/45551 , C23C16/45574 , Y10T29/494 , Y10T29/49432 , Y10T29/49826 , Y10T137/0318 , Y10T137/87249
摘要： A delivery device for thin-film material deposition has at least first, second, and third inlet ports for receiving a common supply for a first, a second and a third gaseous material, respectively. Each of the first, second, and third elongated emissive channels allow gaseous fluid communication with one of corresponding first, second, and third inlet ports. The delivery device can be formed from apertured plates, superposed to define a network of interconnecting supply chambers and directing channels for routing each of the gaseous materials from its corresponding inlet port to a corresponding plurality of elongated emissive channels. The delivery device comprises a diffusing channel formed by a relief pattern between facing plates. Also disclosed is a process for thin film deposition. Finally, more generally, a flow diffuser and a corresponding method of diffusing flow is disclosed.
摘要翻译：用于薄膜材料沉积的递送装置具有至少第一，第二和第三入口端口，用于分别接收用于第一，第二和第三气态材料的共同供应。第一，第二和第三细长发射通道中的每一个允许与对应的第一，第二和第三入口端口之一的气态流体连通。输送装置可以由孔板形成，叠加以限定互连供应室的网络，并且引导通道，用于将每个气态材料从其对应的入口端口路由到相应的多个细长的发射通道。输送装置包括由相对板之间的浮雕图案形成的扩散通道。还公开了一种用于薄膜沉积的方法。最后，更一般地，公开了一种流扩散器和相应的扩散流的方法。

88. 发明申请

US20120080778A1 ELECTRONIC DEVICE 有权
标题翻译：电子设备
公开(公告)号：US20120080778A1
公开(公告)日：2012-04-05
申请号：US13313055
申请日：2011-12-07
申请人： David H. Levy
发明人： David H. Levy
IPC分类号： H01L23/00
CPC分类号： C23C16/04 , C23C16/45551 , C23C16/545 , H01L21/02554 , H01L21/02642 , H01L2924/0002 , H01L2924/00
摘要： A device is prepared using a chemical vapor deposition method and has a patterned thin film on a substrate that is applied using a deposition inhibitor material. The deposition inhibitor material is a hydrophilic polymer that is a neutralized acid having a pKa of 5 or less, wherein at least 90% of the acid groups are neutralized. The deposition inhibitor material can be patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
摘要翻译：使用化学气相沉积方法制备器件，并且在使用沉积抑制剂材料施加的衬底上具有图案化薄膜。沉积抑制剂材料是亲水性聚合物，其是pKa为5或更小的中和酸，其中至少90％的酸基被中和。沉积抑制剂材料可以同时或随后施加到基底上，以有效地提供不具有沉积抑制剂材料的基底的选定区域。薄膜仅基本沉积在不具有沉积抑制剂材料的基底的选定区域中。

89. 发明授权

US07998878B2 Method for selective deposition and devices 有权
标题翻译：选择性沉积和器件的方法
公开(公告)号：US07998878B2
公开(公告)日：2011-08-16
申请号：US12622550
申请日：2009-11-20
申请人： David H. Levy , Lee W. Tutt
发明人： David H. Levy , Lee W. Tutt
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： C23C16/042 , C23C16/02 , C23C16/306 , C23C16/45551
摘要： A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is soluble in an aqueous solution comprising at least 50 weight % water and has an acid content of less than 2.5 meq/g of polymer. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
摘要翻译：用于形成图案化薄膜的诸如原子层沉积方法的化学气相沉积方法包括将沉积抑制剂材料施加到基底上。沉积抑制剂材料是可溶于包含至少50重量％水并且酸含量低于2.5meq / g聚合物的水溶液的亲水性聚合物。沉积抑制剂材料被图案化同时或随后被应用于基底，以提供有效地不具有沉积抑制剂材料的基底的选定区域。薄膜仅基本沉积在不具有沉积抑制剂材料的基底的选定区域中。

90. 发明申请

US20110097494A1 FLUID CONVEYANCE SYSTEM INCLUDING FLEXIBLE RETAINING MECHANISM 审中-公开
标题翻译：流体输送系统，包括柔性保持机构
公开(公告)号：US20110097494A1
公开(公告)日：2011-04-28
申请号：US12606231
申请日：2009-10-27
申请人： Roger S. Kerr , David H. Levy , James E. Sutton
发明人： Roger S. Kerr , David H. Levy , James E. Sutton
IPC分类号： C23C16/458 , C23C16/00
CPC分类号： C23C16/458 , C23C16/45551 , C23C16/545 , Y10T137/8593
摘要： A fluid conveyance system for thin film material deposition includes a fluid distribution manifold and a substrate transport mechanism. The fluid distribution manifold includes an output face that includes a plurality of elongated slots. The output face of the fluid distribution manifold is positioned opposite a first surface of the substrate such that the elongated slots face the first surface of the substrate and are positioned proximate to the first surface of the substrate. The substrate transport mechanism causes a substrate to travel in a direction and includes a flexible mechanism that contacts a second surface of the substrate in a region that is proximate to the output face of the fluid distribution manifold.
摘要翻译：用于薄膜材料沉积的流体输送系统包括流体分配歧管和基底输送机构。流体分配歧管包括包括多个细长槽的输出面。流体分配歧管的输出面与衬底的第一表面相对定位，使得细长的槽面对衬底的第一表面并且靠近衬底的第一表面定位。衬底传送机构使衬底沿一个方向行进，并且包括在靠近流体分配歧管的输出面的区域中接触衬底的第二表面的柔性机构。

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