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81. 发明申请

US20110070680A1 Pattern forming method and manufacturing method of semiconductor device 有权
标题翻译：半导体器件的图案形成方法和制造方法
公开(公告)号：US20110070680A1
公开(公告)日：2011-03-24
申请号：US12926134
申请日：2010-10-27
申请人： Tomoyuki Takeishi , Hirokazu Kato , Shinichi Ito
发明人： Tomoyuki Takeishi , Hirokazu Kato , Shinichi Ito
IPC分类号： H01L31/0232
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0392 , G03F7/091 , G03F7/11 , G03F7/162 , G03F7/168 , G03F7/20 , G03F7/2006 , G03F7/2022 , G03F7/2041 , G03F7/30 , G03F7/32 , G03F7/38 , H01L21/02052 , H01L21/0276 , H01L21/0332 , H01L21/31144 , H01L21/67023
摘要： A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.
摘要翻译：图案形成方法包括在基板上形成电介质膜上的自旋，通过使用洗涤液清洗电介质膜上的自旋，洗涤之后干燥电介质膜上的自旋表面，在干燥的涂层型绝缘上形成感光膜膜，将能量射线发射到感光膜的预定位置，以在感光膜上形成潜像，使感光膜显影，以形成对应于潜像的感光膜图案，并处理电介质上的自旋具有感光胶片图案的胶片作为掩模。

82. 发明授权

US07727853B2 Processing method, manufacturing method of semiconductor device, and processing apparatus 失效
标题翻译：半导体装置的加工方法，制造方法以及加工装置
公开(公告)号：US07727853B2
公开(公告)日：2010-06-01
申请号：US12216228
申请日：2008-07-01
申请人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
发明人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
IPC分类号： H01L21/76
CPC分类号： H01L23/544 , B23K26/066 , B23K26/364 , B23K26/40 , B23K2103/172 , G03F7/2026 , G03F7/70341 , G03F9/7076 , G03F9/708 , G03F9/7084 , G21K5/10 , H01J2237/30438 , H01L2223/54453 , H01L2924/0002 , Y10S438/949 , H01L2924/00
摘要： A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.
摘要翻译：一种处理方法，用于在形成在基板上的膜中选择性地减少或去除待曝光的区域，该方法包括相对地扫描基板上的形状比整个第一区域要暴露的整个第一区域的第一曝光灯区域，以选择性地去除或减少要暴露的第一区域，并且用第二曝光光将待暴露的整个第一区域暴露在整个第一区域内的整个第二区域，以选择性地暴露待暴露的整个第二区域。

83. 发明申请

US20050208777A1 Film forming method, and substrate-processing apparatus 失效
标题翻译：成膜方法和基板处理装置
公开(公告)号：US20050208777A1
公开(公告)日：2005-09-22
申请号：US11034926
申请日：2005-01-14
申请人： Hirokazu Kato , Tomoyuki Takeishi , Shinichi Ito
发明人： Hirokazu Kato , Tomoyuki Takeishi , Shinichi Ito
IPC分类号： G03F7/16 , B05C9/12 , B05C13/00 , B05D3/00 , B05D3/02 , G02F1/136 , G03F7/09 , G03F7/11 , G03F7/26 , G03F7/38 , H01L21/00 , H01L21/027 , H01L21/20 , H01L21/312 , H01L21/469
CPC分类号： H01L21/02282 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/162 , G03F7/168 , H01L21/0274 , H01L21/312
摘要： A film forming method comprising forming a liquid coating film on a substrate by supplying a liquid containing a coating type thin film forming substance and a solvent onto the substrate, substantially converging a variation in film thickness of the coating film, making the coating film stand by in an atmosphere including moisture under a predetermined condition after the substantial-convergence, the predetermined condition being such that a product of a time for which the coating film is exposed to the atmosphere, a predetermined time, and a water content per unit volume in an atmosphere in the vicinity of a surface of the coating film is made to be greater than or equal to a predetermined value, and forming a solid thin film on the substrate after the stand-by, the thin film being formed by carrying out an elimination of the solvent in the coating film and heat treatment for generating an irreversible reaction to the coating type thin film forming substance in the coating film.
摘要翻译：一种成膜方法，包括在基板上形成液体涂膜，将含有涂膜型薄膜形成物质和溶剂的液体供给到基板上，使涂膜的膜厚变化大致收敛，使涂膜静置在基本收敛之后的预定条件下包括水分的气氛中，预定条件使得涂膜暴露于大气中的时间，预定时间和每单位体积的水含量的乘积使涂膜表面附近的气氛大于或等于预定值，并且在待机之后在基板上形成固体薄膜，通过执行消除形成薄膜涂膜中的溶剂和用于对涂膜中的涂层型薄膜形成物质产生不可逆反应的热处理。

84. 发明申请

US20050176254A1 Pattern forming method and manufacturing method of semiconductor device 有权
标题翻译：半导体器件的图案形成方法和制造方法
公开(公告)号：US20050176254A1
公开(公告)日：2005-08-11
申请号：US11034975
申请日：2005-01-14
申请人： Tomoyuki Takeishi , Hirokazu Kato , Shinichi Ito
发明人： Tomoyuki Takeishi , Hirokazu Kato , Shinichi Ito
IPC分类号： G03F7/26 , G03F7/11 , G03F7/16 , G03F7/38 , H01L21/027 , H01L21/033 , H01L21/306 , H01L21/311 , H01L21/314
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0392 , G03F7/091 , G03F7/11 , G03F7/162 , G03F7/168 , G03F7/20 , G03F7/2006 , G03F7/2022 , G03F7/2041 , G03F7/30 , G03F7/32 , G03F7/38 , H01L21/02052 , H01L21/0276 , H01L21/0332 , H01L21/31144 , H01L21/67023
摘要： A pattern forming method comprises forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.
摘要翻译：图案形成方法包括在基板上形成电介质膜上的自旋，通过使用洗涤液清洗电介质膜上的自旋，洗涤之后干燥电介质膜上的自旋表面，在干燥的涂层型绝缘上形成感光膜膜，将能量射线发射到感光膜的预定位置，以在感光膜上形成潜像，使感光膜显影，以形成对应于潜像的感光膜图案，并处理电介质上的自旋具有感光胶片图案的胶片作为掩模。

85. 发明授权

US07709383B2 Film forming method, and substrate-processing apparatus 失效
标题翻译：成膜方法和基板处理装置
公开(公告)号：US07709383B2
公开(公告)日：2010-05-04
申请号：US11034926
申请日：2005-01-14
申请人： Hirokazu Kato , Tomoyuki Takeishi , Shinichi Ito
发明人： Hirokazu Kato , Tomoyuki Takeishi , Shinichi Ito
IPC分类号： H01L21/20 , H01L21/44
CPC分类号： H01L21/02282 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/162 , G03F7/168 , H01L21/0274 , H01L21/312
摘要： A film forming method comprising forming a liquid coating film on a substrate by supplying a liquid containing a coating type thin film forming substance and a solvent onto the substrate, substantially converging a variation in film thickness of the coating film, making the coating film stand by in an atmosphere including moisture under a predetermined condition after the substantial-convergence, the predetermined condition being such that a product of a time for which the coating film is exposed to the atmosphere and a water content per unit volume in an atmosphere in the vicinity of a surface of the coating film is made to be greater than or equal to a predetermined value, and forming a solid thin film on the substrate after the stand-by, the thin film being formed by carrying out an elimination of the solvent in the coating film and heat treatment for generating an irreversible reaction to the coating type thin film forming substance in the coating film.
摘要翻译：一种成膜方法，包括在基板上形成液体涂膜，将含有涂膜型薄膜形成物质和溶剂的液体供给到基板上，使涂膜的膜厚变化大致收敛，使涂膜静置在大致收敛之后的预定条件下的包括水分的气氛中，预定条件使得涂膜暴露于大气的时间与在大气附近的气氛中的每单位体积的含水量使涂膜的表面大于或等于预定值，并在待机之后在基板上形成固体薄膜，通过在涂层中除去溶剂而形成薄膜膜和热处理，以在涂膜中产生与涂层型薄膜形成物质不可逆的反应。

86. 发明申请

US20080035851A1 Processing method, manufacturing method of semiconductor device, and processing apparatus 审中-公开
公开(公告)号：US20080035851A1
公开(公告)日：2008-02-14
申请号：US11905977
申请日：2007-10-05
申请人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
发明人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
IPC分类号： G21K5/04
CPC分类号： H01L23/544 , B23K26/066 , B23K26/364 , B23K26/40 , B23K2103/172 , G03F7/2026 , G03F7/70341 , G03F9/7076 , G03F9/708 , G03F9/7084 , G21K5/10 , H01J2237/30438 , H01L2223/54453 , H01L2924/0002 , Y10S438/949 , H01L2924/00
摘要： A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.

87. 发明申请

US20090039275A1 Processing method, manufacturing method of semiconductor device, and processing apparatus 失效
标题翻译：半导体装置的加工方法，制造方法以及加工装置
公开(公告)号：US20090039275A1
公开(公告)日：2009-02-12
申请号：US12216228
申请日：2008-07-01
申请人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
发明人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
IPC分类号： G01T1/24
CPC分类号： H01L23/544 , B23K26/066 , B23K26/364 , B23K26/40 , B23K2103/172 , G03F7/2026 , G03F7/70341 , G03F9/7076 , G03F9/708 , G03F9/7084 , G21K5/10 , H01J2237/30438 , H01L2223/54453 , H01L2924/0002 , Y10S438/949 , H01L2924/00
摘要： A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.
摘要翻译：一种处理方法，用于在形成在基板上的膜中选择性地减少或去除待曝光的区域，该方法包括相对地扫描基板上的形状比整个第一区域要暴露的整个第一区域的第一曝光灯区域，以选择性地去除或减少要暴露的第一区域，并且用第二曝光光将待暴露的整个第一区域暴露在整个第一区域内的整个第二区域，以选择性地暴露待暴露的整个第二区域。

88. 发明授权

US07288466B2 Processing method, manufacturing method of semiconductor device, and processing apparatus 失效
标题翻译：半导体装置的加工方法，制造方法以及加工装置
公开(公告)号：US07288466B2
公开(公告)日：2007-10-30
申请号：US10436972
申请日：2003-05-14
申请人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
发明人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
IPC分类号： H01L21/46
CPC分类号： H01L23/544 , B23K26/066 , B23K26/364 , B23K26/40 , B23K2103/172 , G03F7/2026 , G03F7/70341 , G03F9/7076 , G03F9/708 , G03F9/7084 , G21K5/10 , H01J2237/30438 , H01L2223/54453 , H01L2924/0002 , Y10S438/949 , H01L2924/00
摘要： A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.
摘要翻译：一种处理方法，用于在形成在基板上的膜中选择性地减少或去除待曝光的区域，该方法包括相对地扫描基板上的形状比整个第一区域要暴露的整个第一区域的第一曝光灯区域，以选择性地去除或减少要暴露的第一区域，并且用第二曝光光将待暴露的整个第一区域暴露在整个第一区域内的整个第二区域，以选择性地暴露待暴露的整个第二区域。

89. 发明授权

US07851363B2 Pattern forming method and manufacturing method of semiconductor device 有权
标题翻译：半导体器件的图案形成方法和制造方法
公开(公告)号：US07851363B2
公开(公告)日：2010-12-14
申请号：US11034975
申请日：2005-01-14
申请人： Tomoyuki Takeishi , Hirokazu Kato , Shinichi Ito
发明人： Tomoyuki Takeishi , Hirokazu Kato , Shinichi Ito
IPC分类号： H01L21/311
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0392 , G03F7/091 , G03F7/11 , G03F7/162 , G03F7/168 , G03F7/20 , G03F7/2006 , G03F7/2022 , G03F7/2041 , G03F7/30 , G03F7/32 , G03F7/38 , H01L21/02052 , H01L21/0276 , H01L21/0332 , H01L21/31144 , H01L21/67023
摘要： A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.
摘要翻译：图案形成方法包括在基板上形成电介质膜上的自旋，通过使用洗涤液清洗电介质膜上的自旋，洗涤之后干燥电介质膜上的自旋表面，在干燥的涂层型绝缘上形成感光膜膜，将能量射线发射到感光膜的预定位置，以在感光膜上形成潜像，使感光膜显影，以形成对应于潜像的感光膜图案，并处理电介质上的自旋具有感光胶片图案的胶片作为掩模。

90. 发明申请

US20080050677A1 Processing method, manufacturing method of semiconductor device, and processing apparatus 审中-公开
标题翻译：半导体装置的加工方法，制造方法以及加工装置
公开(公告)号：US20080050677A1
公开(公告)日：2008-02-28
申请号：US11905976
申请日：2007-10-05
申请人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
发明人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
IPC分类号： G03C5/00
CPC分类号： H01L23/544 , B23K26/066 , B23K26/364 , B23K26/40 , B23K2103/172 , G03F7/2026 , G03F7/70341 , G03F9/7076 , G03F9/708 , G03F9/7084 , G21K5/10 , H01J2237/30438 , H01L2223/54453 , H01L2924/0002 , Y10S438/949 , H01L2924/00
摘要： A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.
摘要翻译：一种处理方法，用于在形成在基板上的膜中选择性地减少或去除待曝光的区域，该方法包括相对地扫描基板上的形状比整个第一区域要暴露的整个第一区域的第一曝光灯区域，以选择性地去除或减少要暴露的第一区域，并且用第二曝光光将待暴露的整个第一区域暴露在整个第一区域内的整个第二区域，以选择性地暴露待暴露的整个第二区域。

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