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    • 81. 发明申请
    • Method for manufacturing semiconductor device or semiconductor wafer
    • 制造半导体器件或半导体晶片的方法
    • US20070139857A1
    • 2007-06-21
    • US11641913
    • 2006-12-20
    • Kaori WatanabeHiroyuki ItohTakatoshi Hattori
    • Kaori WatanabeHiroyuki ItohTakatoshi Hattori
    • H01T23/00
    • H01L21/67051H01L21/67219
    • A method for manufacturing a semiconductor device or a semiconductor wafer is provided, in which a removal of slurry that is adherently remained on the back surface of the semiconductor wafer can be ensured without a need for employing an increased dimension of apparatus. An edge portion of a semiconductor wafer is polished while a back surface of the semiconductor wafer is chucked to a chucking unit of a first polishing unit, and then, the polished semiconductor wafer is dechucked from the chucking unit of the first polishing unit. Next, a predetermined gap is formed in a location above the chucking unit of the second polishing unit, and the semiconductor wafer is disposed therein. Water is discharged form the chucking unit of the second polishing unit to clean the back surface of the semiconductor wafer W. Thereafter, the back surface of the semiconductor wafer is chucked to the chucking unit of the second polishing unit, and then the semiconductor wafer is polished.
    • 提供了一种用于制造半导体器件或半导体晶片的方法,其中可以确保去除粘附在半导体晶片的背表面上的浆料,而不需要采用增加的设备尺寸。 抛光半导体晶片的边缘部分,同时将半导体晶片的背面夹持到第一抛光单元的夹持单元,然后将抛光的半导体晶片从第一抛光单元的夹持单元中拔出。 接下来,在第二研磨单元的夹持单元上方的位置形成预定的间隙,并且在其中配置半导体晶片。 水从第二研磨单元的夹持单元排出,以清洁半导体晶片W的背面。然后,将半导体晶片的背面夹持到第二研磨单元的夹持单元,然后将半导体晶片 抛光
    • 83. 发明授权
    • Optical amplifier
    • 光放大器
    • US07215464B1
    • 2007-05-08
    • US11396551
    • 2006-04-04
    • Kosuke KomakiHiroyuki Itoh
    • Kosuke KomakiHiroyuki Itoh
    • H04B4/00H04B10/12
    • H04B10/296H04B2210/003
    • Optical amplifier which can eliminate the need for an optical detection section before an external attenuating medium, can prevent SN degradation, and can reduce power required for pumping light. An attenuation amount detection section detects an amount of signal light attenuation caused by a variable optical attenuator and the external attenuating medium connected in series, by means of a front optical detection section provided before the variable optical attenuator and the external attenuating medium and a back optical detection section provided thereafter. An attenuation amount control section controls the variable optical attenuator such that the amount of signal light attenuation detected by the attenuation amount detection section is kept constant. A connection detection section detects a connection or disconnection of the external attenuating medium in accordance with the amount of signal light attenuation obtained when the amount of attenuation caused by the variable optical attenuator is minimized.
    • 可以消除在外部衰减介质之前需要光学检测部分的光放大器,可以防止SN降级,并且可以减少泵浦光所需的功率。 衰减量检测部分通过设置在可变光衰减器和外部衰减介质之前的前光检测部分和后光学器件来检测由可变光衰减器和外部衰减介质串联连接的信号光衰减量 检测部分。 衰减量控制部分控制可变光衰减器,使得衰减量检测部分检测到的信号光衰减量保持不变。 连接检测部分根据由可变光衰减器引起的衰减量最小化时获得的信号光衰减量来检测外部衰减介质的连接或断开。
    • 84. 发明授权
    • Method of manufacturing thin-film magnetic head
    • 制造薄膜磁头的方法
    • US07155809B2
    • 2007-01-02
    • US11401955
    • 2006-04-12
    • Yoshitaka SasakiHiroyuki ItohTakehiro Kamigama
    • Yoshitaka SasakiHiroyuki ItohTakehiro Kamigama
    • G11B5/127G11B5/147
    • G11B5/1878Y10T29/49041Y10T29/49043Y10T29/49044Y10T29/49046Y10T29/49052Y10T29/4906
    • A method of manufacturing a thin-film magnetic head comprises the steps of forming a first pole layer, forming a gap layer on a pole portion of the first pole layer, and forming a second pole layer on the gap layer. The second pole layer incorporates a first layer adjacent to the gap layer, and a second layer including a track width defining portion. The step of forming the second pole layer includes the steps of: forming a magnetic layer for forming the first layer on the gap layer; forming the second layer on the magnetic layer; and etching the magnetic layer to align with a width of the track width defining portion, so that the magnetic layer is formed into the first layer and the width of each of the first layer and the second layer taken in a medium facing surface is made equal to the track width.
    • 一种制造薄膜磁头的方法包括以下步骤:形成第一极层,在第一极层的极部上形成间隙层,并在间隙层上形成第二极层。 第二极层包括与间隙层相邻的第一层,以及包括轨道宽度限定部分的第二层。 形成第二极层的步骤包括以下步骤:在间隙层上形成用于形成第一层的磁性层; 在所述磁性层上形成所述第二层; 并且蚀刻所述磁性层以与所述磁道宽度限定部分的宽度对准,使得所述磁性层形成为所述第一层,并且使所述第一层和所述第二层中的每个所述第一层和所述第二层的宽度在介质面向表面中相等 到轨道宽度。