会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 85. 发明申请
    • RADIATION DETECTOR
    • 辐射探测器
    • US20130026374A1
    • 2013-01-31
    • US13552074
    • 2012-07-18
    • Tatsuya SaitoTatsuya IwasakiNobuhiro YasuiToru Den
    • Tatsuya SaitoTatsuya IwasakiNobuhiro YasuiToru Den
    • G01T1/202
    • G01T1/202G01T1/2008G21K4/00G21K2004/04G21K2004/06
    • Provided is a radiation detector, including: a two-dimensional light receiving element including a plurality of pixels; and a scintillator layer having multiple scintillator crystals two-dimensionally arranged on a light receiving surface of the two-dimensional light receiving element, in which: the scintillator crystal includes two crystal phases, which are a first crystal phase including a material including a plurality of columnar crystals extending in a direction perpendicular to the light receiving surface of the two-dimensional light receiving element and having a refractive index n1, and a second crystal phase including a material existing between the plurality of columnar crystals and having a refractive index n2; and a material having a refractive index n3 is placed between adjacent scintillator crystals, the refractive index n3 satisfying a relationship of one of n1≦n3≦n2 and n2≦n3≦n1.
    • 提供一种辐射检测器,包括:包括多个像素的二维光接收元件; 以及具有二维配置在二维光接收元件的受光面上的多个闪烁器晶体的闪烁器层,其中:所述闪烁体晶体包括两个晶相,所述晶体相是包括包含多个 柱状晶体在垂直于二维光接收元件的光接收表面的方向上延伸并具有折射率n1,第二晶相包括存在于多个柱状晶体之间并具有折射率n2的材料; 折射率n3的材料被放置在相邻的闪烁体晶体之间,折射率n3满足n1和n1E之间的关系; n3和n1E; n2和n2和n1E之间的关系; n3和n1E; n1。
    • 86. 发明申请
    • RADIATION DETECTING DEVICE
    • 辐射检测装置
    • US20130022169A1
    • 2013-01-24
    • US13544096
    • 2012-07-09
    • Tatsuya IwasakiNobuhiro YasuiToru Den
    • Tatsuya IwasakiNobuhiro YasuiToru Den
    • G01T1/20G01N23/04B82Y15/00
    • G01T1/202
    • Provided is a radiation detecting device, including: a scintillator which emits light when radiation is irradiated thereto; and a photosensor array having light receiving elements for receiving the emitted light which are two-dimensionally arranged, in which: the scintillator has a phase separation structure for propagating the light emitted inside the scintillator in a light propagating direction, the phase separation structure being formed by embedding multiple columnar portions formed of a first material in a second material; the radiation is irradiated to the scintillator from a direction which is not in parallel to the light propagating direction; and the light emitted inside the scintillator is propagated through the scintillator in the light propagating direction and is received by the photosensor array which is placed so as to face an end face of the scintillator.
    • 本发明提供一种放射线检测装置,其特征在于,包括:闪光体,其在对其照射时发光; 以及具有用于接收二维布置的发射光的光接收元件的光传感器阵列,其中:闪烁体具有用于在光传播方向上传播闪烁体内的光的相分离结构,形成相分离结构 通过在第二材料中嵌入由第一材料形成的多个柱状部分; 辐射从不与光传播方向平行的方向照射到闪烁体; 并且在闪烁体内发射的光在光传播方向上传播通过闪烁体,并被放置成面对闪烁体的端面的光电传感器阵列接收。
    • 88. 发明申请
    • PROCESS FOR PRODUCING SCINTILLATORS
    • 生产扫描仪的过程
    • US20110223323A1
    • 2011-09-15
    • US13027467
    • 2011-02-15
    • Yoshihiro OhashiNobuhiro YasuiToru Den
    • Yoshihiro OhashiNobuhiro YasuiToru Den
    • B05D5/06
    • G21K4/00C09K11/628
    • A process for producing a scintillator including the steps of producing a CsI columnar film formed of columnar CsI crystals by a deposition method, and adding an emission center to the CsI columnar film by disposing the CsI columnar film and an emission center material in a non-contact state in a closed space, heating the CsI columnar film in the range of not less than a sublimation temperature or evaporation temperature of the emission center material and not more than a temperature at which a columnar shape of the CsI columnar film can be maintained, and heating the emission center material at a temperature of not less than a sublimation temperature or evaporation temperature thereof.
    • 一种制造闪烁体的方法,包括以下步骤:通过沉积方法制备由柱状CsI晶体形成的CsI柱状膜,并且通过将CsI柱状膜和发射中心材料设置在非磁性层中,向CsI柱状膜添加发射中心, 在封闭空间中的接触状态,在不低于发光中心材料的升华温度或蒸发温度的范围内加热CsI柱状膜,并且不超过可以保持CsI柱状膜的柱状形状的温度, 并在不低于其升华温度或蒸发温度的温度下加热发射中心材料。