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    • 83. 发明授权
    • LED array
    • LED阵列
    • US07811842B2
    • 2010-10-12
    • US11622150
    • 2007-01-11
    • Wen-Huang LiuJui-Kang Yen
    • Wen-Huang LiuJui-Kang Yen
    • G01R31/28
    • H01L25/0753G01R31/2635H01L33/62H01L2224/45144H01L2224/48137Y10T29/49004Y10T29/53022H01L2924/00
    • Methods for fabricating light-emitting diode (LED) array structures comprising multiple vertical LED stacks coupled to a single metal substrate is provided. The LED array structure may comprise two, three, four, or more LED stacks arranged in any configuration. Each of the LED stacks may have an individual external connection to make a common anode array since the p-doped regions of the LED stacks are all coupled to the metal substrate, or some to all of the n-doped regions of the LED stacks may be electrically connected to create a parallel LED array. Such LED arrays may offer better heat conduction and improved matching of LED characteristics (e.g., forward voltage and emission wavelength) between the individual LED stacks compared to conventional LED arrays.
    • 提供了包括耦合到单个金属基板的多个垂直LED叠层的制造发光二极管(LED)阵列结构的方法。 LED阵列结构可以包括以任何配置布置的两个,三个,四个或更多个LED堆叠。 每个LED堆叠可以具有单独的外部连接以形成公共阳极阵列,因为LED堆叠的p掺杂区域全部耦合到金属衬底,或者LED堆叠的一些至所有n掺杂区域 电连接以产生并联LED阵列。 与常规LED阵列相比,这样的LED阵列可以提供更好的热传导和改进的LED特征(例如,正向电压和发射波长)的匹配。