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81. 发明授权

US06852593B2 Haze-free BST films 失效
标题翻译：无雾BST薄膜
公开(公告)号：US06852593B2
公开(公告)日：2005-02-08
申请号：US10614489
申请日：2003-07-03
申请人： Cem Basceri , Gurtej Sandhu
发明人： Cem Basceri , Gurtej Sandhu
IPC分类号： C23C16/40 , C30B25/02 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242
CPC分类号： H01L21/31691 , C23C16/409 , C30B25/02 , C30B29/32 , H01L28/55
摘要： Described herein is a method for producing a haze-free (Ba, Sr)TiO3 (BST) film, and devices incorporating the same. In one embodiment, the BST film is made haze-free by depositing the film with a substantially uniform desired crystal orientation, for example, (100), preferably by forming the film by metal-organic chemical vapor deposition at a temperature greater than about 580° C. at a rate of less than about 80 Å/min, to result in a film having about 50 to 53.5 atomic percent titanium. In another embodiment, where the BST film serves as a capacitor for a DRAM memory cell, a desired {100} orientation is induced by depositing the bottom electrode over a nucleation layer of NiO, which gives the bottom electrode a preferential {100} orientation. BST is then grown over the {100} oriented bottom electrode also with a {100} orientation. A nucleation layer of materials such as Ti, Nb and Mn can also be provided over the bottom electrode and beneath the BST film to induce smooth, haze-free BST growth. Haze-free BST film can also be favored by forming the bottom electrode at high temperatures close to those used for BST deposition, and without a vacuum break between the bottom electrode and BST deposition.
摘要翻译：本文描述了一种生产无雾（Ba，Sr）TiO 3（BST）膜的方法，以及包含它的装置。在一个实施方案中，BST膜通过以基本上均匀的所需晶体取向沉积薄膜而形成为无雾状，例如（100），优选通过金属 - 有机化学气相沉积在大于约580℃的温度下形成薄膜 ℃，以小于约/分钟的速率，得到具有约50至53.5原子百分数的钛的膜。在另一个实施例中，其中BST膜用作DRAM存储单元的电容器，通过将底部电极沉积在NiO的成核层上来诱导所需的{100}取向，这使得底部电极具有优先{100}取向。然后，BST也以{100}取向生长在{100}取向的底部电极上。还可以在底部电极和BST膜下方提供诸如Ti，Nb和Mn的材料的成核层，以引起平滑无雾的BST生长。通过在接近用于BST沉积的高温下形成底部电极，并且在底部电极和BST沉积之间没有真空断裂，也可以使无色BST膜更有利。

82. 发明授权

US06682969B1 Top electrode in a strongly oxidizing environment 失效
标题翻译：顶极电极处于强氧化环境
公开(公告)号：US06682969B1
公开(公告)日：2004-01-27
申请号：US09652863
申请日：2000-08-31
申请人： Cem Basceri , Howard E. Rhodes , Gurtej Sandhu , F. Daniel Gealy , Thomas M. Graettinger
发明人： Cem Basceri , Howard E. Rhodes , Gurtej Sandhu , F. Daniel Gealy , Thomas M. Graettinger
IPC分类号： H01L2100
CPC分类号： H01L28/65 , H01L21/31637 , H01L21/31691 , H01L23/5222 , H01L27/10852 , H01L28/56 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.
摘要翻译：一种改进的电荷存储装置及其提供方法，电荷存储装置包括导体 - 绝缘体导体（CIC）三明治。 CIC夹层包括沉积在半导体集成电路上的第一导电层。 CIC夹层还包括以齐平方式沉积在第一导电层上的第一绝缘层。第一绝缘层包括具有多个氧化物和部分填充氧化物的多个氧原子的结构，其中未填充的氧气定义氧空位的浓度。 CIC夹层还包括在强氧化环境中沉积在第一绝缘层上的第二导电层，以便降低第一绝缘层中氧空位的浓度，从而在第一绝缘层之间提供富氧界面层和第二导电层，以便在第二导电层内捕获多个氧原子。富氧界面层和第二导电层用作氧空位吸收器，用于吸收源于第一绝缘层的迁移氧空位，从而降低第一绝缘层中氧空位的浓度，从而减少氧空位的累积接口层。因此，第一绝缘层提供增加的介电常数和增加的电流流过其中，从而增加CIC夹层的电容，并且减少流过CIC夹层的漏电流。

83. 发明授权

US06660535B2 Method of forming haze- free BST films 有权
公开(公告)号：US06660535B2
公开(公告)日：2003-12-09
申请号：US09971945
申请日：2001-10-04
申请人： Cem Basceri , Gurtej Sandhu
发明人： Cem Basceri , Gurtej Sandhu
IPC分类号： H01L2100
CPC分类号： H01L21/31691 , C23C16/409 , C30B25/02 , C30B29/32 , H01L28/55
摘要： Described herein is a method for producing a haze-free (Ba, Sr)TiO3 (BST) film, and devices incorporating the same. In one embodiment, the BST film is made haze-free by depositing the film with a substantially uniform desired crystal orientation, for example, (100), preferably by forming the film by metal-organic chemical vapor deposition at a temperature greater than about 580° C. at a rate of less than about 80 Å/min, to result in a film having about 50 to 53.5 atomic percent titanium. In another embodiment, where the BST film serves as a capacitor for a DRAM memory cell, a desired {100} orientation is induced by depositing the bottom electrode over a nucleation layer of NiO, which gives the bottom electrode a preferential {100} orientation. BST is then grown over the {100} oriented bottom electrode also with a {100} orientation. A nucleation layer of materials such as Ti, Nb and Mn can also be provided over the bottom electrode and beneath the BST film to induce smooth, haze-free BST growth. Haze-free BST film can also be favored by forming the bottom electrode at high temperatures close to those used for BST deposition, and without a vacuum break between the bottom electrode and BST deposition.

84. 发明授权

US06522570B1 System and method for inhibiting imprinting of capacitor structures of a memory 有权
标题翻译：用于抑制存储器的电容器结构的印记的系统和方法
公开(公告)号：US06522570B1
公开(公告)日：2003-02-18
申请号：US10022036
申请日：2001-12-13
申请人： Cem Basceri , Daniel F. Gealy
发明人： Cem Basceri , Daniel F. Gealy
IPC分类号： G11C1122
CPC分类号： G11C11/22
摘要： A system and method for inhibiting the imprinting of capacitor structures employed by memory cells by occasionally changing charge states of the capacitors to a complementary charge state.
摘要翻译：一种用于通过偶尔将电容器的电荷状态改变为互补电荷状态来抑制存储器单元采用的电容器结构的压印的系统和方法。

85. 发明授权

US09269858B2 Engineered substrates for semiconductor devices and associated systems and methods 有权
标题翻译：用于半导体器件的工程衬底及相关系统和方法
公开(公告)号：US09269858B2
公开(公告)日：2016-02-23
申请号：US13223162
申请日：2011-08-31
申请人： Martin F. Schubert , Cem Basceri , Vladimir Odnoblyudov , Casey Kurth , Thomas Gehrke
发明人： Martin F. Schubert , Cem Basceri , Vladimir Odnoblyudov , Casey Kurth , Thomas Gehrke
IPC分类号： H01L29/04 , H01L21/00 , H01L33/02 , H01L33/00 , H01L33/16 , H01L33/46
CPC分类号： H01L33/0079 , H01L33/0062 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/02 , H01L33/16 , H01L33/46
摘要： Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.
摘要翻译：本文公开了用于半导体器件的工程衬底。根据特定实施例的装置包括具有包括发射辐射有源区域的多个半导体材料的换能器结构。所述装置还包括具有第一材料和第二材料的工程衬底，所述第一材料和所述第二材料中的至少一个具有与所述多个材料中的至少一个的热膨胀系数至少近似匹配的热膨胀系数的半导体材料。第一材料和第二材料中的至少一个被定位成接收来自有源区域的辐射并改变光的特性。

86. 发明申请

US20120276750A1 METHOD AND SYSTEM FOR BINDING HALIDE-BASED CONTAMINANTS 有权
标题翻译：用于混合基于卤化物的污染物的方法和系统
公开(公告)号：US20120276750A1
公开(公告)日：2012-11-01
申请号：US13541435
申请日：2012-07-03
申请人： Garo J. Derderian , Cem Basceri , Donald L. Westmoreland
发明人： Garo J. Derderian , Cem Basceri , Donald L. Westmoreland
IPC分类号： H01L21/31 , C22C14/00 , C01B35/04 , C01B21/076 , C01B33/06
CPC分类号： H01L29/06 , B01J20/3483 , B01J38/02 , C23C16/08 , C23C16/34 , C23C16/4404 , C23C16/4412 , H01L21/324 , H01L23/58 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
摘要： A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.
摘要翻译：提出了一种减少沉积的钛基薄膜内基于卤化物的污染的方法和装置。在沉积工艺期间，在沉积室内利用卤化物吸附材料以除去卤化物，例如氯和氯化物，以使钛基膜的污染最小化。还提供了一种再生卤化物吸附材料的方法。

87. 发明授权

US08207563B2 Integrated circuitry 有权
标题翻译：集成电路
公开(公告)号：US08207563B2
公开(公告)日：2012-06-26
申请号：US11638931
申请日：2006-12-13
申请人： Cem Basceri , Gurtej S. Sandhu
发明人： Cem Basceri , Gurtej S. Sandhu
IPC分类号： H01L27/108
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852
摘要： A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes comprising sidewalls. The plurality of capacitor electrodes are supported at least in part with a retaining structure which engages the sidewalls, with the retaining structure comprising a fluid pervious material. A capacitor dielectric material is deposited over the capacitor electrodes through the fluid pervious material of the retaining structure effective to deposit capacitor dielectric material over portions of the sidewalls received below the retaining structure. Capacitor electrode material is deposited over the capacitor dielectric material through the fluid pervious material of the retaining structure effective to deposit capacitor electrode material over at least some of the capacitor dielectric material received below the retaining structure. Integrated circuitry independent of method of fabrication is also contemplated.
摘要翻译：形成多个电容器的方法包括提供包括侧壁的多个电容器电极。多个电容器电极至少部分地由与侧壁接合的保持结构支撑，保持结构包括透液材料。电容器电介质材料沉积在电容器电极上，通过保持结构的流体可渗透材料，其有效地将电容器电介质材料沉积在容纳在保持结构下方的侧壁的部分上。电容器电极材料通过保持结构的流体可透过材料沉积在电容器介电材料上，有效地将电容器电极材料沉积在容纳在保持结构下方的电容器电介质材料的至少一些之上。还考虑了与制造方法无关的集成电路。

88. 发明申请

US20120120549A1 Mixed Composition Interface Layer and Method of Forming 审中-公开
标题翻译：混合组合界面层和成型方法
公开(公告)号：US20120120549A1
公开(公告)日：2012-05-17
申请号：US13293778
申请日：2011-11-10
申请人： Cem Basceri , Gurtej S. Sandhu
发明人： Cem Basceri , Gurtej S. Sandhu
IPC分类号： H01G9/00
CPC分类号： H01L21/0228 , C23C16/029 , C23C16/18 , C23C16/405 , C23C16/45525 , H01L21/02183 , H01L21/28562 , H01L21/31604 , H01L21/31683 , H01L28/40 , H01L28/60 , Y10T428/24917 , Y10T428/24926
摘要： An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element. A second layer comprising the second chemical element can be formed on the interface layer. The first layer might not substantially contain the second chemical element, the second layer might not substantially contain the first chemical element, or both. An apparatus can include a first layer containing a first chemical element, an interface layer chemisorbed on the first layer, and a second layer containing a second element on the interface layer. The interface layer can contain at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element.
摘要翻译：界面形成方法包括在第一层上形成含有第一化学元素和化学吸附的第一层，所述界面层含有与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。包含第二化学元素的第二层可以形成在界面层上。第一层可能基本上不包含第二化学元素，第二层可能基本上不含有第一化学元素，或两者都不包含。装置可以包括含有第一化学元素的第一层，在第一层上化学吸附的界面层和在界面层上含有第二元素的第二层。界面层可以包含与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。

89. 发明申请

US20120056206A1 SOLID STATE LIGHTING DIES WITH QUANTUM EMITTERS AND ASSOCIATED METHODS OF MANUFACTURING 有权
标题翻译：具有量子发射体和相关制造方法的固态照明灯
公开(公告)号：US20120056206A1
公开(公告)日：2012-03-08
申请号：US12874360
申请日：2010-09-02
申请人： Cem Basceri , Casey Kurth , Thomas Gehrke , Kevin Tetz
发明人： Cem Basceri , Casey Kurth , Thomas Gehrke , Kevin Tetz
IPC分类号： H01L33/08 , H01L33/00 , H01L33/32
CPC分类号： H01L33/007 , H01L33/02 , H01L33/08 , H01L2924/0002 , H01L2924/00
摘要： Solid state lighting dies and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting die includes a substrate material, a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The second semiconductor material has a surface facing away from the substrate material. The solid state lighting die also includes a plurality of openings extending from the surface of the second semiconductor material toward the substrate material.
摘要翻译：本文公开了固态照明管芯及其相关的制造方法。在一个实施例中，固态照明管芯包括衬底材料，第一半导体材料，第二半导体材料以及第一和第二半导体材料之间的有源区。第二半导体材料具有背离衬底材料的表面。固态照明裸片还包括从第二半导体材料的表面向衬底材料延伸的多个开口。

90. 再颁专利

USRE43025E1 Mixed composition interface layer and method of forming 有权
标题翻译：混合组成界面层和成型方法
公开(公告)号：USRE43025E1
公开(公告)日：2011-12-13
申请号：US12566533
申请日：2009-09-24
申请人： Cem Basceri , Gurtej S. Sandhu
发明人： Cem Basceri , Gurtej S. Sandhu
IPC分类号： B32B9/00
CPC分类号： H01L21/0228 , C23C16/029 , C23C16/18 , C23C16/405 , C23C16/45525 , H01L21/02183 , H01L21/28562 , H01L21/31604 , H01L21/31683 , H01L28/40 , H01L28/60 , Y10T29/417 , Y10T428/24917 , Y10T428/24926
摘要： An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element. A second layer comprising the second chemical element can be formed on the interface layer. The first layer might not substantially contain the second chemical element, the second layer might not substantially contain the first chemical element, or both. An apparatus can include a first layer containing a first chemical element, an interface layer chemisorbed on the first layer, and a second layer containing a second element on the interface layer. The interface layer can contain at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element.
摘要翻译：界面形成方法包括在第一层上形成含有第一化学元素和化学吸附的第一层，所述界面层含有与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。包含第二化学元素的第二层可以形成在界面层上。第一层可能基本上不包含第二化学元素，第二层可能基本上不含有第一化学元素，或两者都不包含。装置可以包括含有第一化学元素的第一层，在第一层上化学吸附的界面层和在界面层上含有第二元素的第二层。界面层可以包含与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。

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