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81. 发明申请

US20090020157A1 Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same 有权
标题翻译：用于光电器件如CIGS / CIS光伏器件的后电极结构及其制造方法
公开(公告)号：US20090020157A1
公开(公告)日：2009-01-22
申请号：US12149919
申请日：2008-05-09
申请人： Alexey Krasnov , Willem den Boer , Scott V. Thomsen , Leonard L. Boyer, JR.
发明人： Alexey Krasnov , Willem den Boer , Scott V. Thomsen , Leonard L. Boyer, JR.
IPC分类号： H01L31/00 , C23C14/00
CPC分类号： H01L31/022425 , H01L31/02366 , H01L31/0322 , H01L31/0392 , H01L31/03923 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.
摘要翻译：一种光电器件，包括也可用作后反射器的后电极。在本发明的某些示例性实施例中，后电极包括氧化分级的金属基反射膜，以便比支撑电极的后基板（例如，玻璃基板）更靠近后方的位置基质。换句话说，在某些示例性实施例中，后电极被氧化分级，以便比在远离半导体吸收器的位置更靠近光伏器件的半导体吸收器。在某些示例性实施例中，后部衬底的内表面可以可选地被纹理化，使得沉积在其上的后电极也是纹理化的，以便提供期望的电和反射特性。在某些示例性实施例中，后电极可以是Mo和/或MoO x，或者可以使用MoOx和Mo溅射靶的组合来溅射沉积。

82. 发明申请

US20070193624A1 Indium zinc oxide based front contact for photovoltaic device and method of making same 审中-公开
标题翻译：用于光伏器件的氧化锌基前触点及其制造方法
公开(公告)号：US20070193624A1
公开(公告)日：2007-08-23
申请号：US11359775
申请日：2006-02-23
申请人： Alexey Krasnov
发明人： Alexey Krasnov
IPC分类号： H01L31/00
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/022483 , Y02E10/50
摘要： This invention relates to a photovoltaic device including a front contact and/or a method of making the same. In certain example embodiments, the transparent conductive oxide (TCO) front contact is of indium zinc oxide (IZO). In other example embodiments, the IZO may have other element(s) such as silver (Ag) added thereto so that the front contact may be of or include zinc aluminum silver oxide (ZnAlAgO) for example. Moreover, in certain example embodiments the front contact (e.g., IZO or ZnAlAgO) may be sputter-deposited in an oxygen deficient form (substoichiometric); so that subsequent heat treatment or baking used in the photovoltaic device manufacturing (e.g., for subsequent layer formation) results in an optimal stoichiometry which may or may not be substoichiometric in the final product.
摘要翻译：本发明涉及包括前触点和/或其制造方法的光伏器件。在某些示例性实施例中，透明导电氧化物（TCO）前触点是氧化铟锌（IZO）。在其它示例性实施方案中，IZO可以具有添加到其中的其它元素，例如银（Ag），使得前接触可以是例如包含锌铝氧化银（ZnAlAlgO）。此外，在某些示例性实施例中，前接触（例如，IZO或ZnAlAgO）可以以缺氧形式（亚化学计量学）溅射沉积; 使得在光伏器件制造中使用的随后的热处理或烘焙（例如，用于随后的层形成）导致最终的化学计量，其可以或可以不是最终产品中的亚化学计量。

83. 发明申请

US20070184573A1 Method of making a thermally treated coated article with transparent conductive oxide (TCO) coating for use in a semiconductor device 审中-公开
标题翻译：制造用于半导体器件的透明导电氧化物（TCO）涂层的热处理涂层制品的方法
公开(公告)号：US20070184573A1
公开(公告)日：2007-08-09
申请号：US11349346
申请日：2006-02-08
申请人： Alexey Krasnov
发明人： Alexey Krasnov
IPC分类号： H01L21/44
CPC分类号： C03C17/245 , C03C17/3429 , C03C17/3464 , C03C2217/211 , C03C2217/216 , C03C2217/244 , C03C2217/256 , C03C2218/154 , C23C14/086 , C23C14/5806 , H01L31/1884 , Y02E10/50
摘要： A method of making a coated article including a transparent conductive oxide (TCO) film supported by a glass substrate is provided. Initially, an amorphous metal oxide film is sputter-deposited onto a glass substrate, either directly or indirectly. The glass substrate with the amorphous film and a semiconductor film thereon is then thermally treated at high temperature(s). The thermal treating causes the amorphous film to be transformed into a crystalline transparent conductive oxide (TCO) film. The heat used in the thermal treating causes the amorphous film to turn into a crystalline film, causes the visible transmission of the film to increase, and/or causes the film to become electrically conductive.
摘要翻译：提供一种制造包括由玻璃基板支撑的透明导电氧化物（TCO）膜的涂布制品的方法。最初，将非晶金属氧化物膜直接或间接地溅射沉积到玻璃基底上。然后将具有非晶膜的玻璃基板和其上的半导体膜在高温下进行热处理。热处理使得非晶膜转变成晶体透明导电氧化物（TCO）膜。在热处理中使用的热量使得非晶膜变成结晶膜，导致膜的可见透射增加，和/或使膜变得导电。

84. 发明申请

US20050225863A1 Oled display with contrast enhancing interference members 失效
标题翻译：带对比度增强干扰成员的Oled显示
公开(公告)号：US20050225863A1
公开(公告)日：2005-10-13
申请号：US10518102
申请日：2003-06-11
申请人： Alexey Krasnov , Richard Wood , David Johnson , Peter Hofstra
发明人： Alexey Krasnov , Richard Wood , David Johnson , Peter Hofstra
IPC分类号： G02B27/00 , H01L27/32 , H01L51/52
CPC分类号： H01L27/3244 , H01L51/5281 , H01L2251/5315
摘要： The present invention introduces a novel design for active matrix displays, utilizing both organic light-emitting diode (OLED) and thin-film electroluminescent technologies. In a first aspect there is provided a top-emitting OLED, including an optical interference contrast-enhancing stack that is placed on the top of the driving thin-film transistor, and which extendes to the entire pixel area to cover the reflecting parts of the pixel. In a second aspect, there is provided a bottom-emitting OIED wherein an optical interference contrast-enhancing stack is placed right under the driving thin-film transistor and, separately between the organic stack and the top electrode, typically a cathode. The optical interference contrast-enhancing stack suppresses light reflection from the thin-film transistor and the upper electrode. In the top emitting design, the optical interference contrast-enhancing stack is placed on the top of the thin-film transistor source and drain electrodes as well as on the top of the opaque bottom electrode. A method of achieving substantial uniformity across a display having multiple areas of optical interference members is also provided.
摘要翻译：本发明引入了利用有机发光二极管（OLED）和薄膜电致发光技术的有源矩阵显示器的新颖设计。在第一方面，提供了一种顶部发射OLED，其包括放置在驱动薄膜晶体管的顶部上的光学干涉对比度增强堆叠，并且延伸到整个像素区域以覆盖所述驱动薄膜晶体管的反射部分像素。在第二方面，提供了一种底部发射OIED，其中光学干涉对比度增强堆叠放置在驱动薄膜晶体管的正下方，并且分开地位于有机堆叠和顶部电极之间，通常为阴极。光学干涉对比度增强堆栈抑制来自薄膜晶体管和上电极的光反射。在顶部发射设计中，光学干涉对比度增强堆叠被放置在薄膜晶体管源极和漏极的顶部以及不透明底部电极的顶部上。还提供了一种在具有多个光学干涉构件区域的显示器上实现实质上均匀性的方法。

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